• Journal of the Korean Institute of Telematics and Electronics
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• v.26 no.5
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• pp.38-45
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• 1989

We have studied the electrical characteristics of the hydrogenated amorphous silicon (a-Si:H) ambiploar thin film transistors (TET'S)using 100ppm boron-doped a-Si:H as an active layer. The enhancement of drain current due to the double injection behavior has been observed in the p-channel operation of the TFT. The drain current decreases with time in streched exponential form when the gate voltage is positive. The result indicates that the dangling bonds created by electron accumulation show identical time dependence as the diffusion of hydrogen in the film. We observed the experimental evidence that the doping efficiency changes either when the gate bias is applied or when the light is illuminated on boron-doped a-Si:H.

• Journal of the Korean Ceramic Society
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• v.37 no.1
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• pp.50-56
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• 2000

Precursor gels with the composition of xZrO2·(100-x)SiO2 systems (x=10, 20 and 30 mol%) were prepared by the sol-gel method. Kinetic parameters, such as activation energy, Avrami's exponent, n, and dimensionality crystal growth value, m, have been simultaneously calculated from the DTA data using Kissinger and Matusita equations. The crystallite size dependence of tetragonal to monoclinic transformation of ZrO2 was investigated using XRD, in relation to the fracture toughness. The crystallization of tetragonal ZrO2 occurred through 3-dimensional diffusiion controlled growth(n=m=2) and the activation energy for crystallization was calculated using Kissinger and Matusita equations, as about 310∼325±10kJ/mol. The growth of t-ZrO2, in proportion to the cube of radius, increased with increasing heating temperature and hteat-treatment time. It was suggested that the diffusion of Zr4+ ions by Ostwald ripening was rate-limiting process for thegrowth of t-ZrO2 crystallite size. The fracture toughness of xZrO2·(100-x)SiO2 systems glass ceramics increased with increasing crystallite size of t-ZrO2. The fracture toughness of 30ZrO2·70SiO2 system glass ceramics heated at 1,100℃ for 5h was 4.84 MPam1/2 at a critical crystaliite size of 40 nm.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.131-131
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• 2000

We witnessed the enhancement of mangetoresistance (MR) in La0.75Ca0.25MnO3 thin films grown on Si (100) substrates by RF magnetron sputtering. The films are polycrystalline with (100) and (110) orientations. The lattice constants of films are reduced as much as 0.9% compared to the one of the bulk sample, which proves that the compressive stress on films was imposed by Si sbustrate. It is found that the MR value (Δ$\rho$/$\rho$0) of films are 0.33, 0.29 and 0.27 under a magnetic field of 1.5T for each films with deposition temperature of $700^{\circ}C$, 75$0^{\circ}C$ and 80$0^{\circ}C$, respectively. The correlation between the MR values and lattice constants of films is discussed. It is concluded that the compressive stress on films cause the enhancement of MR values of thin films grown on Si (1000 substrates. Some mechanism of compressive stress induced by Si substrate is suggested.

• Journal of the Korean Magnetics Society
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• v.7 no.3
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• pp.134-139
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• 1997

Magneto-impedence (MI) were measured in amorphous $Co_{66}Fe_4NiB_{14} Si_{15}$ ribbons at 100 kHz as a function of the angle from ribbon axis. The samples were prepared using etching method, with the angle deviated from ribbon axis, 0$^{\circ}$, 30$^{\circ}$, 45$^{\circ}$, 60$^{\circ}$ and 90$^{\circ}$. The MI measured in 60$^{\circ}$ sample increased with the increasing magnetic fields. The dip in profile appears at H = 0 above the angle of 30$^{\circ}$. The maximum values of MI and their dips are increased with the cutting angle, but the maximum value of MI decreased at 90$^{\circ}$. The increase of MI with the angle was analyzed in terms of the transverse magnetic permeability.

• Journal of Environmental Science International
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• v.9 no.1
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• pp.81-88
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• 2000

Every year, 1.1 million tons of rice-hull are produced in South Korea by the by-product in pounding rice. But they has mainly been utilized as a fuel, agricultural compost and moisture proofs. So, it's very valuable to use waste rice-hull for activated carbon manufacture. SiO2 content was the highest among inorganics in rice-hull. Therefore, the SiO2 extraction experiments were carried out under the various conditions of pH 9 to 14, reaction time from 2 to 24 hrs and various temperature of 20 to 100℃. The results showed that increase in pH and temperature enhanced SiO2 extraction from the carbonized rice-hull. The surface area of the carbonized rice-hull indicating activated carbon adsorption capacity was very small as 178∼191 m2/g at first. However, it was increased to 610∼675 m2/g when extracted in alkali solution at 100℃. When the mixing rate of carbonized rice-hull and NaOH was 1:1.5, iodine No. and surface area of activated rice-hull during 10 min at 700℃ were 1,650 mg/g and 1837 m2/g, respectively. Subsequently, an activated carbon with specific surface area of 1,300∼1,900m2/g was manufactured in a short contact time of 10∼30 min with a mixing rate of 1:1.5 in carbonized rice-hull and NaOH, and iodine No. and specific surface area increased as the amount of SiO2 removal increased.

• Proceedings of the Korean Vacuum Society Conference
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• 2001.02a
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• pp.182-182
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• 2001

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2011.05a
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• pp.127-127
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• 2011

수소가 아닌 헬륨을 희석 가스로 사용하여 나노결정질 실리콘박막을 증착하였고 압력과 RF power에 따른 특성을 살펴보았다. 특히, 4 Torr이상의 공정압력과 낮은 $SiH_4$ 유량을 사용하여 high pressure depletion(HPD)조건을 구현하였다. 그 결과, 6 Torr의 압력과 100W의 RF power를 사용하여 67%의 결정화도와 0.28nm/s의 증착속도를 얻었다.

• Journal of the Korean Ceramic Society
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• v.31 no.8
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• pp.934-940
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• 1994

Fibers of ZrO2-SiO2 system were prepared from the hydrolysis and condensation of Si(OC2H5)4 and Zr(OnC3H7)4 with different H2O/alkoxide molar ratios. It was found that fibers could be drawn in the viscosity range of 1~100 poise from HCl catalyzed solutions with lower water contents of the mole ratio H2O/alkoxide, r 2. The fibrous gels were converted into the corresponding oxide glass fibers by heating at 80$0^{\circ}C$. Mechanical test was performed on E, A and 20ZrO2-80SiO2 glass fibers reinforced cement in order to investigate the flexural strength. The flexural strength value of 20ZrO2-80SiO2 glass fibers reinforced cement was greater than those of E and A. The chemical durability of the fibers in alkaline solutions increased with ZrO2 content. The weight loss due to the corrosion by 2N-NaOH solutions at $25^{\circ}C$ for 160 hours was about 0.31$\times$10-2 mg/dm2 for the 20ZrO2-80SiO2 glass fibers, which was superior to that of Vycor glass.

• Korean Journal of Materials Research
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• v.5 no.7
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• pp.897-902
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• 1995

To get optimum synthetic condition of zeolite A made from Kampo natural bentonite, the effects of reactant mole fraction, reaction temperature, and reaction time were studied. The source of silica was 40% -H₂SO₄ treated natural bentonite and that of alumina was synthesized NaA1O₂. The reactant was mixed at the mole ratio of SiO₂ : Al₂O₃ : Na₂O : H₂O=2 : 1 : 1 : 25 and 2 : : 1 : 37. The mixed reactants were aged at 60℃ for 1hr and reacted at 90℃, 100℃ and 120℃ for 1, 3 and 5hr. The optimum synthetic condition was SiO₂ : A1₂O₃ : Na₂O H₂O=2 : 1 : 1 : 30 at 90℃ for 3hr and the synthetic zeolite A prepared by this optimum condition showed the dehydration temperature at 79.2℃ and lattice trans-formation at 503.3℃. The wright loss of water was 5.9%.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.456-456
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• 2009

Boron doping on an n-type Si wafer is requisite process for IBC (Interdigitated Back Contact) solar cells. Fiber laser annealing is one of boron doping methods. For the boron doping, uniformly coated or deposited film is highly required. Plasma enhanced chemical vapor deposition (PECVD) method provides a uniform dopant film or layer which can facilitate doping. Because amorphous silicon layer absorption range for the wavelength of fiber laser does not match well for the direct annealing. In this study, to enhance thermal affection on the existing p-a-Si:H layer, a ${\mu}c$-Si:H intrinsic layer was deposited on the p-a-Si:H layer additionally by PECVD. To improve heat transfer rate to the amorphous silicon layer, and as heating both sides and protecting boron eliminating from the amorphous silicon layer. For p-a-Si:H layer with the ratio of $SiH_4$ : $B_2H_6$ : $H_2$ = 30 : 30 : 120, at $200^{\circ}C$, 50 W, 0.2 Torr for 30 minutes, and for ${\mu}c$-Si:H intrinsic layer, $SiH_4$ : $H_2$ = 10 : 300, at $200^{\circ}C$, 30 W, 0.5 Torr for 60 minutes, 2 cm $\times$ 2 cm size wafers were used. In consequence of comparing the results of lifetime measurement and sheet resistance relation, the laser condition set of 20 ~ 27 % of power, 150 ~ 160 kHz, 20 ~ 50 mm/s of marking speed, and $10\;{\sim}\;50 {\mu}m$ spacing with continuous wave mode of scanner lens showed the correlation between lifetime and sheet resistance as $100\;{\Omega}/sq$ and $11.8\;{\mu}s$ vs. $17\;{\Omega}/sq$ and $8.2\;{\mu}s$. Comparing to the singly deposited p-a-Si:H layer case, the additional ${\mu}c$-Si:H layer for doping resulted in no trade-offs, but showed slight improvement of both lifetime and sheet resistance, however sheet resistance might be confined by the additional intrinsic layer. This might come from the ineffective crystallization of amorphous silicon layer. For the additional layer case, lifetime and sheet resistance were measured as $84.8\;{\Omega}/sq$ and $11.09\;{\mu}s$ vs. $79.8\;{\Omega}/sq$ and $11.93\;{\mu}s$. The co-existence of $n^+$layeronthesamesurfaceandeliminating the laser damage should be taken into account for an IBC solar cell structure. Heavily doped uniform boron layer by fiber laser brings not only basic and essential conditions for the beginning step of IBC solar cell fabrication processes, but also the controllable doping concentration and depth that can be established according to the deposition conditions of layers.