• Title/Summary/Keyword: H-Si(100)

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a-C:H 박막의 가열에 따른 스핀밀도 변화

  • 윤원주;조영옥;노옥환;이정근
    • Proceedings of the Korean Vacuum Society Conference
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    • 2000.02a
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    • pp.91-91
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    • 2000
  • a-C:H 혹은 a-SiC:H 박막은 광전소자 및 태양전지 등의 개발에 있어서 중요한 물질이다. 우리는 a-C:H 및 a-SiC:H 박막을 PECVD (plasma-enhanced chemical vapor deposition) 방법으로 증착시키고, 박막의 가열에 따른 스핀밀도의 변화를 ESR (electron spin resonance) 측정을 통하여 조사하였다. PECVD 증착가스는 Ch4, SiH4 가스를 사용하였고, 기판은 Corning 1737glass를 사용하였으며, 기판 온도는 300-40$0^{\circ}C$, 증착 압력은 0.1-0.3 Torr, r.f. 전력은 3-36W 사이에서 변화되었다. ESR 측정은 상온 X-band 영역에서 수행되었고, modulation amplitude는 2.5G, modulation frequency는 100kHz 이었다. a-C:H 혹은 a-SiC:H 박막은 진공상태의 reactor, 혹은 공기중의 furnace 안에서 300-50$0^{\circ}C$ 영역에서 3-8시간 정도 가열되거나, 혹은 상온에서 약 50$0^{\circ}C$ 정도까지 단계적으로 가열되었다. 증착된 a-C:H 박막의 초기 구조는 Raman 측정으로부터 polymer-like Carbon으로 추정되었으며, 300-35$0^{\circ}C$ 가열시 초기 1시간 정도 사이에는 스핀밀도가 증가되었으나, 그 후 8시간 정도까지의 가열의 경우에도 대체로 동일하게 나타났다. 또한 상온으로부터 약 50$0^{\circ}C$까지 단계적으로 온도를 높여주며, 각 단계마다 1시간씩 가열했을 때도 30$0^{\circ}C$ 정도까지는 스핀밀도가 증가하다가 더 높은 온도로 가면서 다시 스핀밀도가 감소함을 볼 수 있었다. 이러한 스핀밀도의 초기 증가 및 감소를 일으키는 메카니즘에 대해서 논의해 볼 것이다.

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Electroplating of Copper Using Pulse-Reverse Electroplating Method for SiP Via Filling (펄스-역펄스 전착법을 이용한 SiP용 via의 구리 충진에 관한 연구)

  • Bae J. S.;Chang G H.;Lee J. H.
    • Journal of the Microelectronics and Packaging Society
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    • v.12 no.2 s.35
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    • pp.129-134
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    • 2005
  • Electroplating copper is the important role in formation of 3D stacking interconnection in SiP (System in Package). The I-V characteristics curves are investigated at different electrolyte conditions. Inhibitor and accelerator are used simultaneously to investigate the effects of additives. Three different sizes of via are tested. All via were prepared with RIE (reactive ion etching) method. Via's diameter are 50, 75, $100{\mu}m$ and the height is $100{\mu}m$. Inside via, Ta was deposited for diffusion barrier and Cu was deposited fer seed layer using magnetron sputtering method. DC, pulse and pulse revere current are used in this study. With DC, via cannot be filled without defects. Pulse plating can improve the filling patterns however it cannot completely filled copper without defects. Via was filled completely without defects using pulse-reverse electroplating method.

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Study on the growth of 4H-SiC single crystal with high purity SiC fine powder (고순도 SiC 미분말을 적용한 4H-SiC 단결정 성장에 관한 연구)

  • Shin, Dong-Geun;Kim, Byung-Sook;Son, Hae-Rok;Kim, Moo-Seong
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.29 no.6
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    • pp.383-388
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    • 2019
  • High purity SiC fine powder with metal impurity contents of less than 1 ppm was synthesized by improved carbothermal reduction process, and the synthesized powder was used for SiC single crystal growth in RF heating PVT device at temperature above 2,100℃. In-situ x-ray image analyzer was used to observe the sublimation of the powder and single crystal growth behavior during the growth process. SiC powder was used as a source of single crystal growth, exhausted from the outside of the graphite crucible at the growth temperature and left graphite residues. During the growth, the flow of raw materials was concentrated in the middle and influenced the growth behavior of SiC single crystals. This is due to the difference in temperature distribution inside the crucible due to the fine powder. After the single crystal growth was completed, the single crystal ingot was cut into a 1 mm thick single crystal substrate and finely polished using a diamond abrasive slurry. A dark yellow 4H-SiC was observed overall of single crystal substrate, and the polycrystals generated in the outer part may be caused by the incorporation of impurities such as the bubble layer mixed in the process of attaching the seed crystal to the seed holder.

XRD Study for the Effect of Aging and Gel Composition on the Crystdlinity of MCM-41 (숙성과 겔 성분이 MCM-41의 결정성에 미치는 효과에 대한 XRD 연구)

  • Park, Dong-Ho;Park, Sung-Soo
    • Journal of the Korean Chemical Society
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    • v.44 no.1
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    • pp.52-59
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    • 2000
  • The reaction gel mixtures of molar composition (0.3${\sim}$2.1) $SiO_2:\;(0.10{\sim}0.50)\;CTABr:\;0.15{\sim}0.23)\;TMAOH:\;(20{\sim}100)\;H_2O$ we prepared and then aged at room temperature for a definite duration. The aged gel is reacted hydrothermally at $150^{\circ}C$ for 2 days. The pH of reaction gel during synthesis is strongly influenced by the concentration of TMAOH and silica source. The pH change affects the phase of product, which is monitored by X-ray diffractometer. With increasing the TMAOH ratio from 0.19 to 0.23, the gel becomes more basic, and the product involves more lamellar phase. At TMAOH ratio lower than 0.19, the hexagonal phase is lower with decrease of pH. The content of the lamellar phase increases at a lower $SiO_2$ concentration, and higher concentrations have a clear detrimental effect on the crystallinity ofMCM-41 due to an excess silica source. The best quality MCM-41 is synthesized from a reaction gel composition of $1.0\;SiO_2:\;0.27\;CTABr:\;0.19\;TMAOH:\;40\;H_2O$. The pH values of this gel, aged one for 24 hr, and reacted one at $150^{\circ}C$ for 2 days are 12.3, 11.5, and 10.5, respectively. Gel aging for 24 h is essential for preparing high quality MCM-41. Longer aging causes a decrease of hexagonal phase.

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Enhanced Mechanical Properties and Thermal Stability of CrAlN Coatings by Interlayer Deposition (중간층 증착에 의한 CrAlN 코팅의 기계적 물성 및 내열성 향상에 관한 연구)

  • Kim, Hoe-Geun;Ra, Jeong-Hyeon;Song, Myeon-Gyu;Lee, Sang-Yul
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • 2016.11a
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    • pp.100-100
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    • 2016
  • 물리기상증착방법 (Physical vapor deposition)에 의하여 합성된 천이금속 질화물 박막은 경도, 내마모성 등 절삭공구의 성능을 향상시키며, Ti-Al-N, Ti-Zr-N, Zr-Al-N, Cr-Si-N 등의 3원계 경질 박막에 대한 연구가 지속적으로 이루어지고 있다. 이중에서도 CrAlN 코팅은 높은 경도, 낮은 표면 조도 등의 우수한 기계적 특성 이외에 고온에서 안정한 합금상 형성으로 인하여 우수한 내열성을 보유하여 공구 코팅으로의 적용 가능성이 크다. 그러나 최근 공구사용 환경의 가혹화로 인하여 코팅의 내마모성 및 내열성 등의 물성 향상을 통한 공구의 수명 향상이 필요시 되고 있으며, 코팅에 적합한 중간층을 합성함으로써 공구 코팅으로의 적용 가능성을 높이는 연구들이 진행되고 있다. 본 연구에서는 CrAlN 코팅의 물성을 향상시키기 위해 CrAlN 코팅과 WC-Co 6wt.% 모재 사이에 CrN, CrZrN, CrN/CrZrSiN 등의 다양한 중간층을 합성하였으며, 중간층을 포함한 모든 코팅의 두께는 $3{\mu}m$ 로 제어하였다. 합성된 코팅의 미세조직, 경도 및 탄성계수, 내모성을 분석하기 위해 field emission scanning electron microscopy(FE-SEM), nano-indentation, ball-on-disk 마모시험기 및 ${\alpha}-step$을 사용하였다. 코팅의 내열성을 확인하기 위해 코팅을 furnace에 넣어 공기중에서 500, 600, 700, 800, 900, $1,000^{\circ}C$로 30분 동안 annealing 한 후에 nano-indentation을 사용하여 경도를 측정하였다. CrAlN 코팅을 나노 인덴테이션으로 분석한 결과, 모든 코팅의 경도(35.5-36.2 GPa)와 탄성계수(424.3-429.2 GPa)는 중간층의 종류에 상관없이 비슷한 값을 보인 것으로 확인됐다. 그러나, 코팅의 마찰계수는 중간층의 종류에 따라 다른 값을 보였으며, CrN/CrZrSiN 중간층을 증착한 CrAlN 코팅의 마찰계수는 0.34로 CrZrN 중간층을 증착한 CrAlN 코팅의 마찰계수(0.41)에 비해 낮은 값을 보였다. 또한, 코팅의 마모율 및 마모폭도 비슷한 경향을 보인 것으로 보아, CrN/CrZrSiN 중간층을 합성한 CrAlN 코팅의 내마모성이 상대적으로 우수한 것으로 판단된다. 이것은 중간층의 H/E ratio가 코팅의 내마모성에 미치는 영향에 의한 결과로 사료된다. H/E ratio는 파단시의 최대 탄성 변형율로써, 모재/중간층/코팅의 H/E ratio 구배에 따라 코팅 내의 응력의 완화 정도가 변하게 된다. WC 모재 (H/E=0.040)와 CrAlN 코팅(H/E=0.089) 사이에서 CrN, CrZrSiN 중간층의 H/E ratio 는 각각 0.076, 0.083 으로 모재/중간층/코팅의 H/E ratio 구배가 점차 증가함을 확인 할 수 있었고, 일정 응력이 지속적으로 가해지면서 진행되는 마모시험중에 CrN과 CrZrSiN 중간층이 WC와 CrAlN 코팅 사이에서 코팅 내부의 응력구배를 완화시키는 역할을 함으로써 CrAlN 코팅의 내마모성이 향상된 것으로 판단된다. 모든 코팅을 열처리 후 경도 분석결과, CrN/CrZrSiN 중간층을 증착한 CrAlN 코팅은 $1,000^{\circ}C$까지 약 28GPa의 높은 경도를 유지한 것으로 확인 되었고, 이는 CrZrSiN 중간층 내에 존재하는 $SiN_x$ 비정질상의 우수한 내산화성에 의한 결과로 판단된다.

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Preparation of Ferroelectric $BaTiO_3$ Thin Films on MgO-Buffered Si Substrates (MgO 완충층을 이용한 Si 기판상 강유전체 $BaTiO_3$ 박막의 제조)

  • 김상섭
    • Journal of the Korean Ceramic Society
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    • v.34 no.4
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    • pp.373-379
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    • 1997
  • A study on the deposition and characterization of BaTiO3 thin films on MgO-buffered Si(100) substrates by sputtering was conducted. The MgO buffer layers were investigated as a function of deposition temperature. At lower substrate temperature, the MgO layers were not fully crystalline, but a crystallized MgO layer with (001) preferred orientation was obtained at the substrate temperature of $700^{\circ}C$. Partially (00ι) or (h00) textured BaTiO3 films were obtained on Si(100) with the MgO buffer layer grown at 700ι. While, randomly oriented BaTiO3 films with large-scale cracks on the surface were made without the MgO layer. The crystallographic orientation, morphology and electrical properties between the BaTiO3 films on Si with and without the MgO layer were compared using the BaTiO3 film on MgO(100) single crystal substrate as a reference system. Also the favorable role of the MgO layer as a buffer for growing of oriented BaTiO3 films on Si substrates was confirmed.

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Formation and Growth of Cu Nanocrystallite in Si(100) by ion Implantation

  • Kim, H.K.;Kim, S.H.;Moon, D.W.
    • Journal of the Korean Vacuum Society
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    • v.4 no.S2
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    • pp.115-130
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    • 1995
  • In order to produce Cu nanocrystallite in silicon wafer, the implantation technique was used. The samples of silicon (100) wafers were implanted by $Cu^+$ ions at 100 keV and with varying the doses at room temperature. Post-annealing was performed at $800^{\circ}C$ with Ar environment. To investigate the formation of Cu nanocrystallite with ion doses and growth process by thermal annealing, SIMS and HRTEM(high resolution transmission electron microscopy)spectra were studied.

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A study on the crystallographic properties of AlN/Al/SiO$_2$/Si thin film for FBAR (FBAR용 AlN/Al/SiO$_2$/Si 박막의 결정학적 특성에 관한 연구)

  • Kim, G.H.;Keum, M.J.;Choi, H.W.;Kim, K.H.
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2003.07a
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    • pp.151-154
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    • 2003
  • AlN/Al/SiO$_2$/Si thin films for application to FBAR(Film Bulk Acoustic Resonator) devices were prepared by FTS(Facing Targets sputtering system) apparatus which provides a stable discharge at low gas pressures and can deposit high quality thin films because of the substrate located apart from the plasma. The AlN thin films were deposited on a $SiO_2(1{\mu}m)/Si(100)$ substrate using an Al bottom electrode. The process parameters were fixed such as sputering power of 200W, working pressures of 1mTorr and AlN thin film thickness of 800nm, respectively and crytallographic characteristics of AlN thin films were investigated as a function of $N_2$ gas flow rate$[N_2/(N_2+Ar)]$. Thickness of AlN thin films were measured by $\alpha$-step, the crystallographic characteristics and c-axis preferred orientation were evaluated by XRD.

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Chemical Vapor Deposition of Silicon Carbide Thin Films Using the Single Precursor 1,3-Disilabutane

  • Lee, Kyung-Won;Boo, Jin-Hyo;Yu, Kyu-Sang;Kim, Yunsoo
    • The Korean Journal of Ceramics
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    • v.3 no.3
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    • pp.177-181
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    • 1997
  • Epitaxial films of cubic silicon carbide (3C-SiC, $\beta$-SiC) have been grown on Si(001) and Si(111) substrates by high vacuum chemical vapor deposition using the single precursor 1,3-disilabutane, $H_3SiCH_2SiH_2CH_3$, at temperatures 900~$100^{\circ}C$. The advantage of using the single precursor over the covnentional chemical vapor deposition is evident in that the source chemical is safe to handle, carbonization of the substrates is not necessary, accurate stoichiometry of the silicon carbide films is easily achieved, and the deposition temperature is much lowered. The films were characterized by XPS, XRD, SEM, RHEED, RBS, AES, and TED.

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