• Journal of the Chungcheong Mathematical Society
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• v.24 no.4
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• pp.825-832
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• 2011

In this paper, we make a minute and detailed proof of a part which is omitted in the process of obtaining the value of the curvature tensor for an invariant affine connection at the point {H} of a reductive homogeneous space G/H in the paper 'Invariant affine connections on homogeneous spaces' by K. Nomizu.

• Journal of the Korean Mathematical Society
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• v.43 no.1
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• pp.147-157
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• 2006

In this paper, we study complete maximal space-like hypersurfaces with constant Gauss-Kronecker curvature in an antide Sitter space $H_1^4(-1)$. It is proved that complete maximal spacelike hypersurfaces with constant Gauss-Kronecker curvature in an anti-de Sitter space $H_1^4(-1)$ are isometric to the hyperbolic cylinder $H^2(c1){\times}H^1(c2)$ with S = 3 or they satisfy $S{\leq}2$, where S denotes the squared norm of the second fundamental form.

• Kyungpook Mathematical Journal
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• v.45 no.2
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• pp.231-240
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• 2005

The paper shows that a hypersurface with constant curvature with the condition $hD{\subset}D$, of a contact metric manifold with a nullity condition and ${\varphi}-constant$ sectional curvature, has the curvature equals to k and ${\mu}=0$.

• Journal of IKEEE
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• v.22 no.4
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• pp.916-921
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• 2018

In this paper, we analyzed the power MOSFET devices for high voltage and high current operation. 4H-SiC was used instead of Si to improve the static characteristics of the device. Since 4H-SiC has a high critical electric field due to wide band gap, 4H-SiC is more advantageous than Si in high voltage and high current operation. In the conventional VDMOSFET structure using 4H-SiC, the breakdown voltage is limited due to the electric field crowding at the edge of the p-base region. Therefore, in this paper, we propose a Curvature VDMOSFET structure that improves the breakdown voltage and the static characteristics by reducing the electric field crowding by giving curvature to the edge of the p-base region. The static characteristics of conventional VDMOSFET and curvature VDMOSFET are compared and analyzed through TCAD simulation. The Curvature VDMOSFET has a breakdown voltage of 68.6% higher than that of the conventional structure without increasing on-resistance.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2013.05a
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• pp.47-48
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• 2013

• Bulletin of the Korean Mathematical Society
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• v.56 no.1
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• pp.253-263
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• 2019

Let M be a curvature homogeneous or ball-homogeneous non-$coK{\ddot{a}}hler$ almost $coK{\ddot{a}}hler$ 3-manifold. In this paper, we prove that M is locally isometric to a unimodular Lie group if and only if the Reeb vector field ${\xi}$ is an eigenvector field of the Ricci operator. To extend this result, we prove that M is homogeneous if and only if it satisfies ${\nabla}_{\xi}h=2f{\phi}h$, $f{\in}{\mathbb{R}}$.

• Honam Mathematical Journal
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• v.38 no.2
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• pp.359-366
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• 2016

Let H be the 3-dimensional Heisenberg group, ($G=H{\times}S^1$, g) a product Riemannian manifold of Riemannian manifolds H and S with arbitrarily given left invariant Riemannian metrics respectively, and ${\Gamma}$ the discrete subgroup of G with integer entries. Then, on the Riemannian manifold ($M:=G/{\Gamma}$, ${\Pi}^*g=\bar{g}$), ${\Pi}:G{\rightarrow}G/{\Gamma}$, we evaluate the scalar curvature and the Ricci curvature.

• Honam Mathematical Journal
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• v.29 no.4
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• pp.681-694
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• 2007

We study curvature properties of four-dimensional almost Hermitian manifolds with vanishing Bochner curvature tensor as defined by Tricerri and Vanhecke. We give some structure theorems for such manifolds.

• Honam Mathematical Journal
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• v.40 no.2
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• pp.347-354
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• 2018

Let ${\mathcal{C}}$, ${\mathcal{M}}$, ${\mathcal{L}}$ be concircular curvature tensor, M-projective curvature tensor and conharmonic curvature tensor, respectively. We obtain that if a non-Kenmotsu ($k,{\mu}$)'-almost Kenmotsu manifold satisfies ${\mathcal{C}}{\cdot}{\mathcal{S}}=0$, ${\mathcal{R}}{\cdot}{\mathcal{M}}=0$ or ${\mathcal{R}}{\cdot}{\mathcal{L}}=0$, then it is locally isometric to the Riemannian product ${\mathds{H}}^{n+1}(-4){\times}{\mathds{R}}^n$.

• Journal of Life Science
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• v.16 no.5
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• pp.859-865
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• 2006

When thin slits (e.g., $1mm{\times}10mm$) of maize (Zea mays) coleoptiles were floated on a buffer, they spontaneously curved outward because of unbalanced tissue tension between inner and outer faces. Exogenously applied auxin induced inward curvature of the thin strip of the maize coleoptile in a dose-dependent manner. This bioassay system was used to screen endogenous substances that work together with auxin. In methanol extract of maize coleoptiles including the leaves inside, Active fractions that promote the auxin-induced inward curvature of maize coleoptile slices were found. The curvature-enhancing activity of the extract was not related to energy supply. The active substances were adsorbed to $C_{18}$ cartridges even at pH 10 and eluted in two fractions by 50% and 80% methanol. These substances were named as Curvature-Enhancing Factor-1 (CEF-1) and Curvature-Enhancing Factor-2 (CEF-2), respectively. The CEF-2 was resolved on a reversed phase $C_{18}$ column by HPLC.