• Journal of the Semiconductor & Display Technology
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• v.4 no.1 s.10
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• pp.43-48
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• 2005

Metaloganic chemical vapor deposition, also known as metalorganic vapor phase epitaxy has become one of the main techniques for growing thin, high purity films for compound semiconductors such as GaAs, InP, and InGaAsP. In this study, the distribution of growth rate and composition of InGaAsP, InGaP, and InGaAs films are studied using computational method. The influences of process parameters such as pressure, temperature and precursors' partial pressure on the growth rate and composition distributions are analyzed. The film growth rate is increased in the upstream part according to the increase of temperature but not in the downstream part. The Ga composition in InGaAsP film shows an asymptotic behavior for temperature variation but As composition varies significantly within the temperature range considered in the present study. The overall film growth rates of InGaP, InGaAs and InGaAsP are decreased with increasing the Ga/In ratios of the source gases. Pressure variation does not seem to be a significant parameter to the film growth. Film growth characteristics of tertiary films such as InGaP and InGaAs show similar trends to the quaternary film, InGaAsP.

• Nuclear Engineering and Technology
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• v.33 no.5
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• pp.526-538
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• 2001

Fatigue tests in air and in room temperature water were performed to obtain comparable data and stable crack measuring conditions. In air environment, fatigue crack growth rate was increased with increasing temperature due to an increase in crack tip oxidation rate. In room temperature water, the fatigue crack growth rate was faster than in air and crack path varied on loading conditions. In simulated light water reactor (LWR) conditions, there was little environmental effect on the fatigue crack growth rate (FCGR) at low dissolved oxygen or at high loading frequency conditions. While the FCGR was enhanced at high oxygen condition, and the enhancement of crack growth rate increased as loading frequency decreased to a critical value. In fractography, environmentally assisted cracks, such as semi-cleavage and secondary intergranular crack, were found near sulfide inclusions only at high dissolved oxygen and low loading frequency condition. The high crack growth rate was related to environmentally assisted crack. These results indicated that environmentally assisted crack could be formed by the Electrochemical effect in specific loading condition.

• Proceedings of the KWS Conference
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• 2001.05a
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• pp.220-223
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• 2001

In this study, CT specimens were prepared hem ASTM SA516 which was used for pressure vessel plates for room and low temperature service. And we got the following characteristics from fatigue crack growth test carried out in the environment of room and low temperature at $25^{\circ}C$, -3$0^{\circ}C$, -6$0^{\circ}C$, -8$0^{\circ}C$, -l$0^{\circ}C$ and -l2$0^{\circ}C$ and in the range of stress ratio of 0.1, 0.3 by means of opening mode displacement. At the constant stress ratio, the threshold stress intensity factor range ΔK$_{th}$ in the early stage of fatigue crack growth ( Region I ) and stress intensity factor range ΔK in the stable of fatigue crack growth ( Region II) was increased in proportion to descend temperature. It assumed that the fatigue resistance characteristics and fracture strength at low temperature is considerable higher than that of room temperature in the early stage and stable of fatigue crack growth region. The straight line slope relation of logarithm da/dN - ΔK in Region II, that is, the fatigue crack growth exponent m increased with descending temperature at the constant stress ratio. It assumed that the fatigue crack growth rate da/dN is rapid in proportion to descend temperature in Region H and the cryogenic-brittleness greatly affect a material with decreasing temperature.e.greatly affect a material with decreasing temperature.

• Proceedings of the KSME Conference
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• 2003.11a
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• pp.1133-1138
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• 2003

The pressure tubes, which contain high temperature heavy water and fuel, are within the core of a CANDU nuclear reactor, and are thus subjected to high stresses, temperature gradient, and neutron flux. Further, it is well known that pressure tubes of cold-worked Zr-2.5Nb materials result in hydrogen diffusion, which create fully-hydrided regions (frequently called Blister). Thus a proper investigation of hydrogen diffusion within zirconium-alloy nuclear components, such as CANDU pressure tube and fuel channels is essential to predict the structural integrity of these components. In this respect, this paper presents numerical investigation of hydrogen diffusion to quantify the hydrogen concentration for blister growth of CANDU pressure tube. For this purpose, coupled temperature-hydrogen diffusion analyses are performed by means of two-dimensional finite element analysis. Comparison of predicted temperature field and blister with published test data shows good agreement.

• Journal of Korean Vacuum Science & Technology
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• v.4 no.3
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• pp.81-85
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• 2000

The effects of $NH_3$ flow rate and reactor pressure on Al composition and the interface of AlGaN/GaN heterostructure were studied. Equilibrium partial pressure of Ga and Al over AiGaN alloy was calculated as a function of growth pressure, $NH_3$flow rate and temperature. It was found equilbrium vapor pressure of Al is significantly lower than that of Ga, thus, the alloy composition mainly controlled by Ga partial pressure. We believe that more decomposition of Ga occur at lower $NH_3$ flow rate and higher growth pressure leads to preferred Al incorporation into AlGaN. The alloy composition gradient became larger at AlGaN/GaN heterointerface at higher reactor pressures, higher Al composition and low $NH_3$ flow rate. This composition gradient lowered sheet carrier concentration and electron mobility as well. We obtained an AlGaN/GaN heterostructure with sheet carrier density of ${\sim}2{\times}10^{13}cm^{-2}$ and mobility of 1250 and 5000 $cm^2$/Vs at 300 K and 100 K, respectively.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.28 no.2
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• pp.189-195
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• 2004

The pressure tubes, which contain high temperature heavy water and fuel, are within the core of a CANDU nuclear reactor, and are thus subjected to high stresses, temperature gradient, and neutron flux. Further, it is well known that pressure tubes of cold-worked Zr-2.5Nb materials result in hydrogen diffusion, which create fully-hydrided regions (frequently called Blister). Thus a proper investigation of hydrogen diffusion within zirconium-alloy nuclear components, such as CANDU pressure tube and fuel channels is essential to predict the structural integrity of these components. In this respect, this paper presents numerical investigation of hydrogen diffusion to quantify the hydrogen concentration fur blister growth of CANDU pressure tube. For this purpose, coupled temperature-hydrogen diffusion analyses are performed by means of two-dimensional finite element analysis. Comparison of predicted temperature field and blister with published test data shows good agreement.

• Korean Journal of Materials Research
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• v.17 no.6
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• pp.303-307
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• 2007

ZnO thin films were prepared by pulsed laser deposition on amorphous fused silica substrates at different ambient $O_2$ pressures varying from 0.5 to 500 mTorr, to observe the effect of ambient gas on their crystalline structure, morphology and optical properties. Results of X-ray diffraction, scanning electron microscopy, atomic force microscopy and photoluminescence studies showed that crystallinity, surface features and optical properties of the films significantly depended on the oxygen background pressure during growth. A low oxygen pressure (0.5 mTorr) seems to be suitable for the growth of highly c-axis oriented and smoother films possessing a superior luminescent property. The films grown at the higher $O_2$ pressures (50-500 mTorr) were found to have many defects probably due to an excessive incorporation of oxygen into ZnO lattice. We speculate that the film crystallinity could be affected by the kinetics of atomic arrangement during deposition at the higher oxygen pressures.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1998.06a
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• pp.173-176
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• 1998

Epitaxial Si layers were deposited on n- or p-type Si(100) substrates by hot-wall chemical vapor deposition (CVD) technique using the {{{{ {SiH }_{ 2} {Cl }_{2 } - {H }_{ 2} }}}}chemistry. Thermodynamic calculations if the Si-H-Cl system were carried out to predict the window of actual Si deposition procedd and to investigate the effects of process variables(i.e., the deposition temperature, the reactor pressure, and the source gas molar ratios) on the growth of epitaxial layers. The calculated optimum process conditions were applied to the actual growth runs, and the results were in good agreement with the calculation. The expermentally determined optimum process conditions were found to be the deposition temperature between 900 and 9$25^{\circ}C$, the reactor pressure between 2 and 5 Torr, and source gad molar ration({{{{ {H }_{2 }/ {SiH }_{ 2} {Cl }_{2 } }}}}) between 30 and 70, achieving high-quality epitaxial layers.

• Journal of the Korean Ceramic Society
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• v.27 no.3
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• pp.401-411
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• 1990

Deposition of diamond films on Si(100) from the mixtures of methane and hydrogen were investigated using hot W filament CVD method. The nucleation density could be increased thousandfold by surface treatment with SiC powder. Upon oxygen addition to the mixture, crystal facets became developed more clearly by selectively removing non-diamond carbons, but the film growth rate generally decreased. However, at a very high methane content(e.g. 10%), a small amount of oxygen addition has resulted in an increase in the film deposition rate presumably by promotion of methane decomposition. When the gas pressure was varied, the growth rate exhibited a maxiumum at around 20torr and the film crystallinity steadily improved with the pressure increase. The observed variation of the growth rate by oxygen addition was discussed in terms of its role in the pyrolysis and the subsequent gas phase reactions.

• Journal of Information Technology Applications and Management
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• v.25 no.1
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• pp.105-124
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• 2018

The usage level of SMEs' win-win payment system is still lower than originally expected. In order to find the answer, we studied SMEs' usage performance of win-win payment system and analyzed the influencing factors of SMEs' usage level of win-win payment system. This study found that the more SMEs utilize win-win payment system, the higher they achieve the desired performance in finance, customer, process, learning and growth perspective. And this study found that usage level of win-win payment system is high in order of large corporations' pressure, government policy, and SMEs' readiness. This study is expected to improve win-win growth by increasing usage level of win-win payment system between large corporations and SMEs, while establishing desirable ecosystems.