• Korean Journal of Crystallography
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• v.3 no.1
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• pp.23-30
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• 1992

a-SiC crystals were grown on the (001) plane of a-SiC seed crystals by sublimation method to find effects of pressure-reduction rate of the crystal growth furnace own the growth rate and orientstion of grown SiC crystals. Pressure-reduction rate at the initial growth stage affected the crystallinity of grown SiC crystals. In case of high pressure-reduction rate, growth rate was high and 3csic polycrystalline was grown on the seed. On the other hand, low pressure-reduction rate caused the growth rate to be slow and 6H-SiC single crystal was grown on the seed. However, even after growing SiC for 2 hours under the condition in which.

• Journal of the Korean Society of Safety
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• v.16 no.3
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• pp.1-6
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• 2001

The study is to investigate the influence on the fatigue crack growth behaviors for the welded configuration in pressure vessel stiffener. In order to perform this goal, the automatic welded specimens were prepared. The material is ASTM A516 grade 60 steel used in pressure vessel mainly. In skip welding of pad-on-plate, continuous fillet welding and PWHT specimen, fatigue crack is generally initiated at the starting and end old toe zone, and ruptured at the starting old toe zone. The fatigue life of pad-on-plate of the continuous fillet welding specimen is larger than that of pad-on-plate skip fillet welding specimen about 85% under low load, about 20% under high load and less than that of two-pad continuous fillet welding specimen about 85%. In da/dN-$\Delta$K curve under low load, skip fillet welding specimen of pad-on-plate showed retardation on the initial crack, and the fatigue crack growth rate at the low region of $\Delta$K greater specimen E($3.8 {\times} 10^{-6}mm/cycle$). And the fatigue life of welding specimen was smaller than that of PWHT specimen.

• Journal of Bio-Environment Control
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• v.18 no.4
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• pp.303-308
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• 2009

This study was conducted to analyze the feasibility of plant growth under low pressure and to investigate the effect of pressure on plant growth. Three levels of pressures (25, 50, and 101.3 kPa (control)) were provided to analyze the growth of Lettuce (Lactuca sativa L.) as affected by low pressure. Photoperiod, air temperature, and photosynthetic photon flux were set at 16/8 h, 26/$18^{\circ}C$, and $240{\mu}mol{\cdot}m^{-2}s^{-1}$, respectively. Growth characteristics of lettuce were measured on 7 days and 14 days after experiment. Leaf length, leaf width, leaf area, and root dry weight of lettuce measured on 7 days under 25 and 50 kPa were significant as compared to the control. Leaf length, top dry matter and root dry matter of lettuce measured on 14 days were significantly different under 25 and 50 kPa. From these results, we confirmed that lettuce could be grown under low pressure. However high relative humidity by evapotranspiration from leaves and growing beds under low pressure caused the condensation on the inner surface of the chamber. Therefore in a low pressure chamber, humidity control is required to maintain the relative humidity at a proper level.

• Nuclear Engineering and Technology
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• v.48 no.4
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• pp.859-869
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• 2016

Component-scale modeling of boiling is predominantly based on the Eulerian-Eulerian two-fluid approach. Within this framework, wall boiling is accounted for via the Rensselaer Polytechnic Institute (RPI) model and, within this model, the bubble is characterized using three main parameters: departure diameter (D), nucleation site density (N), and departure frequency (f). Typically, the magnitudes of these three parameters are obtained from empirical correlations. However, in recent years, efforts have been directed toward mechanistic modeling of the boiling process. Of the three parameters mentioned above, the departure diameter (D) is least affected by the intrinsic uncertainties of the nucleate boiling process. This feature, along with its prominence within the RPI boiling model, has made it the primary candidate for mechanistic modeling ventures. Mechanistic modeling of D is mostly carried out through solving of force balance equations on the bubble. Forces incorporated in these equations are formulated as functions of the radius of the bubble and have been developed for, and applied to, low-pressure conditions only. Conversely, for high-pressure conditions, no mechanistic information is available regarding the growth rates of bubbles and the forces acting on them. In this study, we use direct numerical simulation coupled with an interface tracking method to simulate bubble growth under high (up to 45 bar) pressure, to obtain the kind of mechanistic information required for an RPI-type approach. In this study, we compare the resulting bubble growth rate curves with predictions made with existing experimental data.

• Proceedings of the KIEE Conference
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• 1997.11a
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• pp.314-316
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• 1997

We have studied the epitaxial growth and electrical properties of $Si_{0.8}Ge_{0.2}$, films on Si substrates at $550^{\circ}C$ by LPCVD. In a low $PH_3$, partial pressure region such as below 1.25 mPa, the phosphorus doping concentration increased proportionally with increasing $PH_3$ partial pressure while the deposition rate and the Ge fraction x were constant. In a higher $PH_3$ partial pressure region, the phosphorus doping concentration and the deposition rate decreased, while the Ge fraction slightly increased. The dependence of P incorporation rate on the $PH_3$ partial pressure was similar to the phosphorus doping concentration. According to test results, it suggests that high surface coverage of phosphorus atoms suppress both the $SiH_4$ adsorption/reaction and the $GeH_4$ adsorption/reaction on the surfaces, and the effect is more stronger on $SiH_4$ than on $GeH_4$. In a higher $PH_3$ partial pressure region, the deposition is largely controlled by surface coverage effect of phosphorus atoms.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.2
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• pp.125-130
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• 2000

Two step growth of reduced pressure chemical vapor eposition has been successfully developed to achieve in-situ phosphorus-doped silicon epilayers, and the characteristic evolution on their microstructures has been investigated using scanning electron microscopy, transmission electron microscopy, and secondary ion mass spectroscopy. The two step growth, which employs heavily in-situ P doped silicon buffer layer grown at low temperature, proposes crucial advantages in manipulating crystal structures of in-situ phosphorus doped silicon. In particular, our experimental results showed that with annealing of the heavily P doped silicon buffer layers, high-quality epitaxial silicon layers grew on it. the heavily doped phosphorus in buffer layers introduces into native oxide and plays an important role in promoting the dispersion of native oxides. Furthermore, the phosphorus doping concentration remains uniform depth distribution in high quality single crystalline Si films obtained by the two step growth.

• 한국신재생에너지학회:학술대회논문집
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• 2010.06a
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• pp.66.1-66.1
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• 2010

Microcrystalline silicon at low temperatures has been developed using plasma enhanced chemical vapor deposition (PECVD). It has been found that energetically positive ion and atomic hydrogen collision on to growing surface have important effects on increasing growth rate, and atomic hydrogen density is necessary for the increasing growth rate correspondingly, while keeping ion bombardment is less level. Since the plasma potential is determined by working pressure, the ion energy can be reduced by increasing the deposition pressure of 700-1200 Pa. Also, correlation of the growth rate and crystallinity with deposition parameters such as working pressure, hydrogen flow rate and input power were investigated. Consequently an efficiency of 7.9% was obtained at a high growth rate of 0.92 nm/s at a high RF power 300W using a plasma-enhanced chemical vapor deposition method (27.12MHz).

• Journal of the Korean Institute of Telematics and Electronics
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• v.22 no.1
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• pp.34-40
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• 1985

An investigation has been made on the growth phenomena of epitaxial layer and polysilicon from SiH2 Cl2 in H2 and the etch phenomena of them from HCI in H2, at the system pressures of 1.0 atm (atmospheric process) and 0.1 attn (reduced pressure process). From the experimental equations for the growth rates and etch rates. the relevant process conditions for the selective epitaxy are predicted for the case of using mixtures of SiH2Cl2 and HCI in H2. As a result, it is found that selective epitaxial growth region exists in the concentration range investigated for the reduced pressure process but it does not for the atmospheric Process. This is due to the differences in the growth rates and etch rates at atmospheric and reduced pressure.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.14 no.5
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• pp.226-232
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• 2004

One predicts the crystal growth rate of ZnSe with a low vapor pressure system in a horizontal configuration based on one dimensional advection-diffusion and two-dimensional diffusion-convection model. The present results show that for the ratios of partial pressures, s = 0.2 and 2.9, the growth rate increases with the temperature differences between the source and crystal. As the ratio of partial pressure approaches the stoichiometric value, s = 2 from s = 1.5 (zinc-deficient case: s < 2) and 2.9 (zinc-rich case: s > 2), the rate increases sharply. For the ranges from 1.5 to 1.999 (zinc-deficient case: s < 2) and from s = 9 to 2.9 (zinc-rich case: s > 2), the rate are slightly varied. From the viewpoint of the order of magnitude, the one-dimensional model for low vapor pressure system falls within the 2D predictions, which indicates the flow fields would be advective-diffusive. For the effects of gravitational accelerations on the rate, the gravitational constants are varied from 1 g to $10^{-6}$ g for $\Delta$T = 50 K and s = 1.5, the rates remain nearly constant, i.e., 211 mg/hr, which indicates Stefan flow is dominant over convection.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.671-674
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• 2004

BSCCO thin films have been fabricated by epitaxy growth at an ultra-low growth rate. The growth rates of the films was set in the region from 0.17 to 0.27 nm/min. MgO(100) was used as a substrate. In order to appreciate stable existing region of Bi 2212 phase with temperature and ozone pressure, the substrate temperature was varied between 655 and 820 $^{\circ}C$ and the highly condensed ozone gas pressure(PO3) in vacuum chamber was varied between $2.0{\times}10^{-6}$ and $2.3{\times}10^{-5}$ Torr. Bi 2212 phase appeared in the temperature range of 750 and 795 $^{\circ}C$ and single phase of Bi 2201 existed in the lower region than $785\;^{\circ}C$. Whereas, $PO_3$ dependance on structural formation was scarcely observed regardless of the pressure variation. And high quality of c-axis oriented Bi 2212 thin film with $T_c$(onset) of about 90 K and $T_c$(zero) of about 45 K is obtained. Only a small amount of CuO in some films was observed as impurity, and no impurity phase such as $CaCuO_2$ was observed in all of the obtained films.