• ETRI Journal
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• v.26 no.3
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• pp.257-261
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• 2004

We grew amorphous SiCN films by pulsed laser deposition using mixed targets. The targets were fabricated by compacting a mixture of SiC and $SiC-{Si_3}{N_4}$ powders. We controlled the film stoichiometry by varying the mixing ratio of the target and the target-to-substrate distance. The mixing ratio of the target had a dominant effect on the film composition. We consider the structures of the SiCN films deposited using 30~70 wt.% SiC in the target to be an intermediate phase of SiC and $SiN_x$. This provides the possibility of growing homogeneous SiCN films with a mixed target at a moderate target-to-substrate distance.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.12
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• pp.867-871
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• 2013

The Ti adhesion layers were deposited onto the glass substrate for transparent capacitors using $Bi_2Mg_{2/3}Nb_{4/3}O_7$ (BMNO) dielectric thin films. Graphene was transferred onto the Ti/glass substrate after growing onto the Ni/$SiO_2$/Si using rapid-thermal pulse CVD (RTPCVD). The BMNO dielectric thin films were investigated for the microstructure, dielectric and leakage properties in the case of capacitors with and without Ti adhesion layers. Leakage current and dielectric properties were strongly dependent on the Ti adhesion layers grown for graphene bottom electrode.

• Journal of Electrical Engineering and information Science
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• v.3 no.1
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• pp.110-116
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• 1998

A single-crystalline epitaxial film of GaAs has been grown on Si using a gs assisted-ionized vapour beam eptaxial technique. The native oxide layer on the silicon substrate was removed at 550$^{\circ}C$ by use of an accelerated arsenic ion beam, instead of a high-temperature desorption. During the growth the substrate temperature was maintained at 550$^{\circ}C$. Transmission electron microscopy and electron diffraction data suggest that the GaAs layer is an epitaxially grown single-crystalline layer. The possibility of growing device quality GaAs on Si is able demonstrated through fabrication of GaAs MODFET on Si substrates.

• Vacuum Magazine
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• v.1 no.2
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• pp.24-29
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• 2014

Display is a key component in electronic devices. OLED is growing very fast recently due to the explosion of the smart phone market although still LCD is the dominating display technology in the display market at the moment. Also needs for the large area and high resolution TVs and flexible displays are increasing these days. Especially flexible display is expected to be one of the key technologies in mobile devices requiring small device size and large display size. Contrary to the conventional displays, flexible display requires organic materials for the substrate, the active driving element and also for the display element. Plastic film as a substrate, organic semiconductor as an active component of the transistor and organic light emitting materials or electronic paper as a display element are studied actively. In this article, mainly backplane technologies such as substrates and the transistor materials for flexible display will be introduced.

• Microbiology and Biotechnology Letters
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• v.18 no.3
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• pp.280-285
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• 1990

Biotransformation of progesterone to 11 $\alpha$ -hydroxyprogesterone by growing cells of Rhizopus nigricans was investigated. As the concentration of progesterone increased, the specific growth rate of R. nigricans decreased linearly, and consequently the conversion yield lowered. The hyphae of the microorganism were observed to become thicker, shorter, and more densely branched at high concentrations of progesterone. In order to improve the process productivity, biotransformation was conducted with continuous addition of progesterone. When the substrate was added continuously at a rate of 0.86 g/hr for 30 hrs, overall conversion yield reached upto 56% while a single addition of the same amount of progesterone yielded about 40% eonversion. When additional feeding of glucose was carried out upon its depletion, an improved br'oconversion yield upto 68% was obtained.

• Korean Journal of Materials Research
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• v.16 no.7
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• pp.408-411
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• 2006

An effective wet-chemical approach is demonstrated for growing large-area, selectively-patterned, and low-temperature-synthesized ZnO nanorods (ZNRs). The growth of ZNRs was enhanced on a Co layer. The selectivity and density were readily controlled by the control of the temperature when the substrate transfers into aqueous solution. The cross-sectional transmission electron microscopy image shows that single crystalline ZNRs grown along [0001] have good adhesion at interface between ZNRs/substrate. The turn-on field was 4 $V/{\mu}m$ at the emission current density of 1 ${\mu}A/cm^2$. The stable emission was obtained at 0.11 $mA/cm^2$ under 7.2 $V/{\mu}m$ over 10 hr. These results suggest that selectively-patterned ZNRs have the potential for use as field emitters in large-area field emission displays.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.612-612
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• 2013

The band-gap opening in graphene is a key factor in developing graphene-based field effect transistors. Although graphene is a gapless semimetal, a band-gap opens when graphene is formed into a graphene nanoribbon (GNR). Moreover, the band-gap energy can be manipulated by the width of the GNR. In this study, we propose a site-specific synthesis of a width-tailored GNR directly onto an insulating substrate. Predeposition of a diamond-like carbon nanotemplate onto a SiO2/Si wafer via focused ion beam-assisted chemical vapor deposition is first utilized for growth of the GNR. These results may present a feasible route for growing a width-tailored GNR onto a specific region of an insulating substrate.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.11a
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• pp.476-479
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• 2000

In this study, mesh-type PECVD system was suggested to minimize the hydrogen concentration. The main structural difference between the triode system and a conventional system is that a mesh was attached to the substrate holding electrode. We investigated several conditions to compare with conventional PECVD. The main effect of mesh was to minimize the substrate damage by ion bombardment and to enhance the surface reaction to induce hydrogen desorption. It was also found that hydrogen concentration decreased but deposition rate increased as increasing applied dias. Applied DC bias enhanced sputtering process. Intense ion bombardment causes the weakly bonded hydrogen or hydrogen-containing species to leave the growing film and increased adatom mobility. Furthermore, addition of hydrogen gas enhance the surface diffusion of adatom. The structural properties of poly-Si films were analyzed by scanning electron microscopy(SEM).

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.145.2-145.2
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• 2013

The band-gap opening in graphene is a key factor in developing graphene-based field effect transistors. Although graphene is a gapless semimetal, a band-gap opens when graphene is formed into a graphene nanoribbon (GNR). Moreover, the band-gap energy can be manipulated by the width of the GNR. In this study, we propose a site-specific synthesis of a width-tailored GNR directly onto an insulating substrate. Predeposition of a diamond-like carbon nanotemplate onto a SiO2/Si wafer via focused ion beam-assisted chemical vapor deposition is first utilized for growth of the GNR. These results may present a feasible route for growing a width-tailored GNR onto a specific region of an insulating substrate.

• Journal of Surface Science and Engineering
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• v.32 no.3
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• pp.317-330
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• 1999

The texture of electrodeposits changes from the orientation that places the lowest energy crystal facets parallel to the substrate under a condition of low ion concentration adjacent to the deposit, to the orientation that places the higher energy crystal facets parallel to the substrate as the ion concentration adjacent to the deposit increases. The electrodeposits have peculiar surface morphologies and microstructures depending on their textures, which in turn may affect their mechanical properties even when they are obtained in a similar electrolysis condition. The electrodeposits undergo recrystallization, when annealed. The recrystallization texture may be different from the deposition texture. These phenomena have been discussed.