• Journal of the Korean Ceramic Society
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• v.40 no.10
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• pp.949-953
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• 2003

Blue emitting CaWO$_4$ thin films were deposited by rf magnetron sputtering. The effect of sputtering parameters and annealing conditions on the luminescent properties were investigated. Structural and stoichiometric properties of thin films were affected by $O_2$/Ar gas ratio and substrate temperature. Post-annealing caused the phosphor thin films to emit improved luminescent properties. The atomic composition of films might depend on annealing atmosphere, which resulted in the changes of luminescent properties. Blue-green emission that was due to oxygen vacancies was observed. However, by controlling oxygen defects, only blue emission could be obtained.

• Journal of the Semiconductor & Display Technology
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• v.6 no.4
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• pp.29-32
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• 2007

Zinc gallate, $ZnGa_2O_4:Mn^{2+}$ co-doped with different concentrations of $Mg^{2+}$ (0.001- 0.5 mol%) was prepared by solid state synthesis method. These compositions were investigated for their photoluminescence and cathodoluminescence properties. The optimized composition $Zn_{0.990}Mg_{0.005}Ga_2O_4:Mn_{0.005}$ shows higher luminescence intensity compared to the parent phosphor. The intense green emission peak was found at 504 nm. The $Mg^{2+}$ doping does not affect much the decay time. It remains <10 ms for these compositions which make them potential candidate for application in TV screens.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.178-181
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• 2001

The organic light-emitting devices (OLEDs) based on fluorescence have low efficiencies due to the requirement of spin-symmetry conservation. By using the phosphorescent material, the internal quantum efficiency can reach 100 %, compared to 25 % in the case of the fluorescent material. Thus, the phosphorescent OLEDs have recently been extensively studied and showed higher internal quantum efficiencies then the conventional OLEDs. In this study, we investigated the characteristics of the phosphorescent OLEDs, with the green emitting phosphor, Ir(ppy)$_3$ (tris(2-phenylpyridine)iridium). The devices with a structure of ITO/TPD/Ir(PPy)$_3$ doped in the host material/BCP/Alq$_3$/Li:Al/Al were fabricated, and its electrical and optical characteristics were studied. By changing the doping concentration of Ir(PPy)$_3$ and the host materials, we fabricated several devices and investigated the device characteristics.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.05a
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• pp.181-184
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• 2004

The green emitting phosphor, $ZnGa_2O_4:Mn$ thin film with spinel structure were deposited by rf magnetron sputtering. Thin film phosphors were heat-treated in nitrogen, vacuum and air atmosphere, respectively. The effects of the substrates, heat-treatment conditions and the sputtering parameters were investigated. The growing behavior and luminescent properties of thin films depend on the crystallinity of the substrates. The Ga/Zn atomic ratios and luminescent characteristics were dependent on the annealing conditions.

• Journal of Information Display
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• v.13 no.3
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• pp.107-111
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• 2012

An almost pure phase of $Ba_3Si_6O_{12}N_2$ doped with $Eu^{2+}$ was successfully synthesized through the ammonia nitridation of an oxide precursor prepared through an aqueous-solution method, using propylene- glycol-modified silane. The emission peak intensity of the obtained $Ba_3Si_6O_{12}N_2:Eu^{2+}$ was -2.2 times higher than that of the sample prepared through a solid-state reaction method.

• Journal of the Korean institute of surface engineering
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• v.30 no.1
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• pp.57-62
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• 1997

Green-emitting $ZnGa_2O_4$ : Mn phosphors were synthesized by a thermal method and their low-voltage cathodoluminescent characteristics were examined for the field emitter display (FED) application. Low efficiency of $ZnGa_2O_4$ : Mn phosphors could be ascribed to the low penetration depth of into phosphors, which might results in charge accumulation on the phosphors screen. For increasing cathodoluminescent of $ZnGa_2O_4$ : Mn under low voltage excitation, wide band-gap oxide materials were added to the $ZnGa_2O_4$: Mn powder. It is found that the luminance can be increased by 20%. Measurement of leakage current on the phosphor screen shows that the enhancement of low-voltage cathodoluminescent by additive materials is mainly due to the consumption of surface charges on the phosphor.

• Journal of the Korean institute of surface engineering
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• v.41 no.4
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• pp.169-173
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• 2008

The objective of this study is to coat the $SiO_2$ layer uniformly on the ZnS:Cu phosphors by using Sol-Gel method. From results of SEM micrographs observation, XRD and XPS analysis, it could be confirmed that $SiO_2$ layer was relatively well coated on ZnS:Cu particles. $Ag_2S$ was used as a decoding chemical to analyze the dense and uniform coating performance of $SiO_2$ layer on phosphor particles. It could be concluded that phosphors synthesized from our two step replacement method showed strong blue peak comparing to other method and rather weak green peak also. Obtained particle size of phosphors were about 20m diameter. Luminescence properties of the phosphors were examined by photoluminescence spectra at the excitation wavelength of 270 nm.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.339-341
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• 2009

A transparent plasma display was developed using transparent glass barrier ribs. Glass barrier ribs were fabricated via a wet etching process. Glass barrier ribs created using a top and bottom etching process showed better transparency compared to those created through only a top etching process. A see-through phosphor layer was obtained by coating the sidewall of the barrier ribs with a conventional opaque phosphor. A fabricated prototype of a transparent plasma display was clear enough to see the background beyond the panel and was well operated by a conventional driving scheme. The maximum luminance was 1150 cd/$m^2$ and the maximum luminous efficacy was 1.35 lm/W in a Ne+13.5%Xe gas-mixture and green cells.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.243-245
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• 2009

The single phase $Ba_2SiS_4$ doped with $Eu^{2+}$ was successfully synthesized by direct sulfurization of an oxide precursor prepared by a spray drying method using a novel water soluble silicon compound, which remains soluble in a given aqueous solution. The intensity of the emission peak of thus obtained $Ba_2SiS_4:Eu^{2+}$ was 1.75 times larger than that of a sample prepared by a solid state reaction method, and it approached 106% compared to one of the best commercially available YAG:$Ce^{3+}$ phosphor.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.56-59
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• 2009

In the nineties the invention of the InGaN blue LED has innovated illumination technology. Currently LCD backlighting and more and more general lighting applications are based on white LEDs comprising of inorganic phosphors and blue emitting InGaN chip. Well established phosphor materials are ortho silicates and garnets like yellow emitting YAG:Ce. In our paper we demonstrate that garnet materials also allow for green light emission for both, general lighting and backlighting LED applications.