• 한국결정성장학회지
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• 제3권2호
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• pp.162-166
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• 1993

적외선 할로겐 lamp를 열원으로 하는 image furnace을 사용하는 Floating Zone process를 이용하여 Spodumene$(LiAlLi_2O_6)$ 단결정을 성장하였다. 결정의 길이는 50~60mm, 직경 6~8mm였고 dopant에 따라 녹색, 흑색, 연한 녹색의 결정을 얻었다. Spodumene 조성의 고찰을 위해 XRD와 FTIF을 조사하였으며, Laue back reflection pattern을 통해 결정성을 고찰하였다. 결정의 광투과도 측정을 위해 optical transmittance를 측정하였다.

• Bulletin of the Korean Chemical Society
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• 제35권4호
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• pp.1247-1250
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• 2014

• Bulletin of the Korean Chemical Society
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• 제20권9호
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• pp.1035-1039
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• 1999

Manganese-activated zincgallate (Zn1-xMnxGa2O4) phosphor as a green phosphor was readily prepared by coprecipitation in aqueous basic solution of metal salts. The obtained product converted to amorphous zincgallate even at 300℃, followed by crystallization at 1000 ℃. The pyrolyzed phosphor showed fine particle, then reduction treatment at 900 ℃ changed into homogeneous shape with slight grain growth(particle size less than 0.5 mm). The photoluminescence characteristics of the zincgallates have been investigated as a function of dopant concentrations, reducing atmospheres and temperatures. Under UV excitation the phosphors displayed the highest green emission efficiency at 504 nm when the specimen oxidized at 1000 ℃ was reduced at 900 ℃ in a mild hydrogen atmosphere (97% N2, 3% H2) with a flow rate of 100 ml/min.

• Current Photovoltaic Research
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• 제4권2호
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• pp.54-58
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• 2016

Laser-doped selective emitter process requires dopant source deposition, spin-on-glass, and is able to form selective emitter through SiNx layer by laser irradiation on desired locations. However, after laser doping process, the remaining dopant layer needs to be washed out. Laser-induced melting of pre-deposited impurity doping is a precise selective doping method minimizing addition of process steps. In this study, we introduce a novel scheme for fabricating highly efficient selective emitter solar cell by laser doping. During this process, laser induced damage induces front contact destabilization due to the hindrance of silver nucleation even though laser doping has a potential of commercialization with simple process concept. When the laser induced damage is effectively removed using solution etch back process, the disadvantage of laser doping was effectively removed. The devices fabricated using laser doping scheme power conversion efficiency was significantly improved about 1% abs. after removal the laser damages.

• 한국세라믹학회지
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• 제40권7호
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• pp.637-643
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• 2003

PDP(Plasma Display Panel)용 녹색 형광체의 발광특성과 결정성을 향상시키기 위해 Zn$_2$SiO$_4$:Mn에 co-dopant로 Cr과 Ti 를 각각 첨가하여 졸-겔법으로 합성하였다. 이렇게 합성된 Zn$_2$SiO$_4$:Mn, M(M=Cr, Ti) 형광체는 고상반응의 경우와 비교하여 상대적으로 낮은 온도인 110$0^{\circ}C$에서 willemite 구조의 단일상이 형성되었다. 제조된 Zn$_2$SiO$_4$:Mn, M(M=Cr, Ti) 형광체에 대하여 진공자외선(Vacuum Ultraviolet, VUV) 영역의 147 nm 여기광원을 사용하여 발광특성을 조사하였다. Co-dopant의 영향을 알아보기 위해 Mn의 농도는 2 ㏖%, $H_2O$/TEOS의 비율은 36.1로 고정하였고, 이때 Cr과 Ti 모두 0.1 ㏖%에서 가장 좋은 발광특성을 나타냈다. Cr이 co-doping된 경우는 농도가 증가할수록 잔광시간은 짧아지나 발광강도는 지속적으로 감소한 반면, Ti를 co-doping했을 때는 오히려 낮은 농도에서 발광강도의 증가를 보이며 2.0 ㏖%에서 급격히 감소하였다.

• Current Photovoltaic Research
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• 제12권2호
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• pp.31-36
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• 2024

Passivating contacts are a promising technology for achieving high efficiency Si solar cells by reducing direct metal/Si contact. Among them, a polysilicon (poly-Si) based passivating contact solar cells achieve high passivation quality through a tunnel oxide (SiO_x) and poly-Si. In poly-Si/SiO_x based solar cells, the passivation quality depends on the amount of dopant in-diffused into the bulk-Si. Therefore, our study fabricated cells by inserting silicon oxide (SiO₂) as a doping barrier before doping and analyzed the barrier effect of SiO₂. In the experiments, p⁺ poly-Si was formed using spin on dopant (SOD) method, and samples ware fabricated by controlling formation conditions such as existence of doping barrier and poly-Si thickness. Completed samples were measured using quasi steady state photoconductance (QSSPC). Based on these results, it was confirmed that possibility of achieving high V_oc by inserting a doping barrier even with thin poly-Si. In conclusion, an improvement in implied V_oc of up to approximately 20 mV was achieved compared to results with thicker poly-Si results.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
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• pp.1583-1586
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• 2006

All non-dopant white organic light-emitting diodes (WOLEDs) have been realized by using solid state highly fluorescent red bis(4-(N-(1- naphthyl)phenylamino)phenyl)fumaronitrile (NPAFN) and amorphous bipolar blue light-emitting 2-(4- diphenylamino)phenyl-5-(4-triphenylsilyl)phenyl- 1,3,4-oxadiazole (TPAOXD), together with well known green fluorophore tris(8- hydroxyquinolinato)aluminum $(Alq_3)$. The fabrication of multilayer WOLEDs did not involve the hard-tocontrol doping process. Two WOLEDs, Device I and II, different in layer thickness of $Alq_3$, 30 and 15 nm, respectively, emitted strong electroluminescence (EL) as intense as $25,000\;cd/m^2$. For practical solid state lighting application, EL intensity exceeding $1,000\;cd/m^2$ was achieved at current density of $18-19\;mA/cm^2$ or driving voltage of 6.5-8 V and the devices exhibited external quantum efficiency $({\eta}_{ext})$ of $2.6{\sim}2.9%$ corresponding to power efficiency $({\eta}_P)$ of $2.1{\sim}2.3\;lm/W$ at the required brightness.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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• pp.1511-1514
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• 2009

Organic light emitting layer in OLED device was formed by gravure printing process in this work. Organic surface coated by gravure printing typically showed relatively bad uniformity. Thickness and roughness control was characterized by applying various mixed solvents in this work. Poly (N-vinyl carbazole) (PVK) and fact-tris(2-phenylpyridine)iridium($Ir(ppy)_3$) are host dopant system materials. PVK was used as a host and Ir(ppy)3 as green-emitting dopant. To luminance efficiency of the plasma treatment on etched ITO glass and then PEDOT:PSS spin coated. The device layer structure of OLED devices is as follow Glass/ITO/PEDOT:PSS/PVK+Ir(ppy)3-Active layer /LiF/Al. It was printed by gravure printing technology for polymer light emitting diode (PLED). To control the thickness multi-printing technique was applied. As the number of the printing was increased the thickness enhancement was increased. To control the roughness of organic layer film, thermal annealing process was applied. The annealing temperature was varied from room temperature, $40^{\circ}C$, $80^{\circ}C$, to $120^{\circ}C$.

• 한국전기전자재료학회논문지
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• 제35권3호
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• pp.292-296
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• 2022

(La_0.5Nd_0.2Sr_0.3)MnO₃ specimens were prepared by a solid-state reaction. In all specimens, X-ray diffraction patterns of an orthorhombic structure were shown. The fracture surfaces of (La_0.5Nd_0.2Sr_0.3)MnO₃ specimens showed a transgranular fracture pattern be possibly due to La ions (0.122 nm) as a perovskite A-site dopant substituting for Nd ions (0.115 nm) having a small ionic radius. The full-width at half maximum (FWHM) of the Mn 2p XPS spectra showed a value greater than that [8] of the single valence state, which is believed to be due to the overlapping of Mn²⁺, Mn³⁺, and Mn⁴⁺ ions. The dependence of Mn 2p spectra on the Mn³⁺/Mn⁴⁺ ratio according to sintering time was not observed. Electrical resistivity resulted in the minimum value of 100.7 Ω-cm for the specimen sintered for 9 hours. All specimens show a typical negative temperature coefficient of resistance (NTCR) characteristics. In the 9-hour sintered specimen, TCR, activation energy, and B25/65-value were -1.24%/℃, 0.19 eV, and 2,445 K, respectively.

• 한국결정성장학회:학술대회논문집
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• 한국결정성장학회 1999년도 PROCEEDINGS OF 99 INTERNATIONAL CONFERENCE OF THE KACG AND 6TH KOREA·JAPAN EMG SYMPOSIUM (ELECTRONIC MATERIALS GROWTH SYMPOSIUM), HANYANG UNIVERSITY, SEOUL, 06월 09일 JUNE 1999
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• pp.321-335
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• 1999

Erbium(Er) doped LiNbO3(Er:LiNbO3) single crystal gibers were grown free of cracks along the c-axis by micro-pulling down method. the Er3+ concentration was distributed homogeneously along the growth axis. The samples for optical characterization were cut from as-grown single crystal fibers and polished. When the 980 nm light was incident on the sample, upconversion phenomena were observed at the green range of wavelength 510~570 nm. In addition, the intensity of upconversion was remarkably increased by increasing the concentration of Er2O3 dopant in as-grown Er:LiNbO3 crystals.