• Title/Summary/Keyword: Graphite cathode

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An Electrochemical Reduction of TiO2 Pellet in Molten Calcium Chloride (CaCl2 용융염에서 TiO2 펠렛의 전기화학적 환원반응 특성)

  • Ji, Hyun-Sub;Ryu, Hyo-Yeol;Jeong, Ha-Myung;Jeong, Kwang-Ho;Jeong, Sang-Mun
    • Journal of Nuclear Fuel Cycle and Waste Technology(JNFCWT)
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    • v.10 no.2
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    • pp.97-104
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    • 2012
  • A porous $TiO_2$ pellet was electrochemically converted to the metallic titanium by using a $CaCl_2$ molten salt system at $850^{\circ}C$. Ni-$TiO_2$ and graphite electrodes were used as cathode and anode, respectively. The electrochemical behaviour of $TiO_2$ pellet was determined by a constant voltage control electrolysis. Various reaction intermediates such as $CaTiO_3$, $Ti_2O$ and $Ti_6O$ were observed by XRD analysis during electrolysis of the pellet. Once $TiO_2$ pellet was converted to a porous metallic structure, the porous structure disappeared by sintering and shrinking with increasing the reaction time at high temperature.

Effects of nitrogen doping on mechanical and tribological properties of thick tetrahedral amorphous carbon (ta-C) coatings (질소 첨가된 ta-C 후막코팅의 기계 및 트라이볼로지적 특성연구)

  • Gang, Yong-Jin;Jang, Yeong-Jun;Kim, Jong-Guk
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • 2016.11a
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    • pp.156-156
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    • 2016
  • The effect of nitrogen doping on the mechanical and tribological performance of single-layer tetrahedral amorphous carbon (ta-C:N) coatings of up to $1{\mu}m$ in thickness was investigated using a custom-made filtered cathode vacuum arc (FCVA). The results obtained revealed that the hardness of the coatings decreased from $65{\pm}4.8GPa$ to $25{\pm}2.4GPa$ with increasing nitrogen gas ratio, which indicates that nitrogen doping occurs through substitution in the $sp^2$ phase. Subsequent AES analysis showed that the N/C ratio in the ta-C:N thick-film coatings ranged from 0.03 to 0.29 and increased with the nitrogen flow rate. Variation in the G-peak positions and I(D)/I(G) ratio exhibit a similar trend. It is concluded from these results that micron-thick ta-C:N films have the potential to be used in a wide range of functional coating applications in electronics. To achieve highly conductive and wear-resistant coatings in system components, the friction and wear performances of the coating were investigated. The tribological behavior of the coating was investigated by sliding an SUJ2 ball over the coating in a ball-on-disk tribo-meter. The experimental results revealed that doping using a high nitrogen gas flow rate improved the wear resistance of the coating, while a low flow rate of 0-10 sccm increased the coefficient of friction (CoF) and wear rate through the generation of hematite (${\alpha}-Fe_2O_3$) phases by tribo-chemical reaction. However, the CoF and wear rate dramatically decreased when the nitrogen flow rate was increased to 30-40 sccm, due to the nitrogen inducing phase transformation that produced a graphite-like structure in the coating. The widths of the wear track and wear scar were also observed to decrease with increasing nitrogen flow rate. Moreover, the G-peaks of the wear scar around the SUJ2 ball on the worn surface increased with increasing nitrogen doping.

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A Study on the Characteristics of Silicon Nanopowders Produced by Transferred Type Arc Plasma Apparatus (이송식 아크플라즈마 장치에 의해 제조된 실리콘 나노분말의 특성에 대한 연구)

  • Kan, Woo-Seop;Park, Sang-Hee
    • Journal of the Korean Society of Industry Convergence
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    • v.24 no.6_2
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    • pp.909-917
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    • 2021
  • This study was carried out experimentally on the production and properties of silicon nanopowders characteristics using a transferred type arc plasma apparatus. To investigate the properties of silicon nanopowder, the purity of argon gas(99.999%, 99.9%) and the partial pressure ratio of nitrogen gas(0~90%) were varied. The total pressure in chamber is 400Torr and the silicon chunk amount used as raw material is 300g. The power supplied to the cathode to generate arc plasma was 9~12kW/h, and the electrode was made of tungsten and graphite with a diameter of 13mm. The particle size, impurity elements and powder evaporation rate of the silicon powder were analyzed using the XRD, FE-SEM, TEM and electronic scale. According to the purity of argon gas, the silicon evaporation rate and the particle size were similar, and impurities were generated more in the case of 99.9% purity than 99.999%. When argon gas and nitrogen gas were mixed in the chamber, the silicon evaporation rate and particle size increased as the partial pressure ratio of nitrogen gas increased. In particular, when the partial pressure ratio of nitrogen gas was 80%, the silicon evaporation rate 80g/h, and the particle size was about 80~100nm.

PREPARATION OF AMORPHOUS CARBON NITRIDE FILMS AND DLC FILMS BY SHIELDED ARC ION PLATING AND THEIR TRIBOLOGICAL PROPERTIES

  • Takai, Osamu
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • 2000.11a
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    • pp.3-4
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    • 2000
  • Many researchers are interested in the synthesis and characterization of carbon nitride and diamond-like carbon (DLq because they show excellent mechanical properties such as low friction and high wear resistance and excellent electrical properties such as controllable electical resistivity and good field electron emission. We have deposited amorphous carbon nitride (a-C:N) thin films and DLC thin films by shielded arc ion plating (SAIP) and evaluated the structural and tribological properties. The application of appropriate negative bias on substrates is effective to increase the film hardness and wear resistance. This paper reports on the deposition and tribological OLC films in relation to the substrate bias voltage (Vs). films are compared with those of the OLC films. A high purity sintered graphite target was mounted on a cathode as a carbon source. Nitrogen or argon was introduced into a deposition chamber through each mass flow controller. After the initiation of an arc plasma at 60 A and 1 Pa, the target surface was heated and evaporated by the plasma. Carbon atoms and clusters evaporated from the target were ionized partially and reacted with activated nitrogen species, and a carbon nitride film was deposited onto a Si (100) substrate when we used nitrogen as a reactant gas. The surface of the growing film also reacted with activated nitrogen species. Carbon macropartic1es (0.1 -100 maicro-m) evaporated from the target at the same time were not ionized and did not react fully with nitrogen species. These macroparticles interfered with the formation of the carbon nitride film. Therefore we set a shielding plate made of stainless steel between the target and the substrate to trap the macropartic1es. This shielding method is very effective to prepare smooth a-CN films. We, therefore, call this method "shielded arc ion plating (SAIP)". For the deposition of DLC films we used argon instead of nitrogen. Films of about 150 nm in thickness were deposited onto Si substrates. Their structures, chemical compositions and chemical bonding states were analyzed by using X-ray diffraction, Raman spectroscopy, X-ray photoelectron spectroscopy and infrared spectroscopy. Hardness of the films was measured with a nanointender interfaced with an atomic force microscope (AFM). A Berkovich-type diamond tip whose radius was less than 100 nm was used for the measurement. A force-displacement curve of each film was measured at a peak load force of 250 maicro-N. Load, hold and unload times for each indentation were 2.5, 0 and 2.5 s, respectively. Hardness of each film was determined from five force-displacement curves. Wear resistance of the films was analyzed as follows. First, each film surface was scanned with the diamond tip at a constant load force of 20 maicro-N. The tip scanning was repeated 30 times in a 1 urn-square region with 512 lines at a scanning rate of 2 um/ s. After this tip-scanning, the film surface was observed in the AFM mode at a constant force of 5 maicro-N with the same Berkovich-type tip. The hardness of a-CN films was less dependent on Vs. The hardness of the film deposited at Vs=O V in a nitrogen plasma was about 10 GPa and almost similar to that of Si. It slightly increased to 12 - 15 GPa when a bias voltage of -100 - -500 V was applied to the substrate with showing its maximum at Vs=-300 V. The film deposited at Vs=O V was least wear resistant which was consistent with its lowest hardness. The biased films became more wear resistant. Particularly the film deposited at Vs=-300 V showed remarkable wear resistance. Its wear depth was too shallow to be measured with AFM. On the other hand, the DLC film, deposited at Vs=-l00 V in an argon plasma, whose hardness was 35 GPa was obviously worn under the same wear test conditions. The a-C:N films show higher wear resistance than DLC films and are useful for wear resistant coatings on various mechanical and electronic parts.nic parts.

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