• 한국전기전자재료학회논문지
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• 제19권9호
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• pp.818-824
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• 2006

The effects of high-temperature process required to fabricate the SiC devices on the surface morphology and the electrical characteristics were investigated for 4H-SiC Schottky diodes. The 4H-SiC diodes without a graphite cap layer as a protection layer showed catastrophic increase in an excess current at a forward bias and a leakage current at a reverse bias after high-temperature annealing process. Moreover it seemed to deviate from the conventional Schottky characteristics and to operate as an ohmic contact at the low bias regime. However, the 4H-SiC diodes with the graphite cap still exhibited their good electrical characteristics in spite of a slight increase in the leakage current. Therefore, we found that the graphite cap layer serves well as the protection layer of silicon carbide surface during high-temperature annealing. Based on a closer analysis on electric characteristics, a conductive surface transfiguration layer was suspected to form on the surface of diodes without the graphite cap layer during high-temperature annealing. After removing the surface transfiguration layer using ICP-RIE, Schottky diode without the graphite cap layer and having poor electrical characteristics showed a dramatic improvement in its characteristics including the ideality factor[${\eta}$] of 1.23, the schottky barrier height[${\Phi}$] of 1.39 eV, and the leakage current of $7.75\{times}10^{-8}\;A/cm^{2}$ at the reverse bias of -10 V.

• 공업화학
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• 제2권4호
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• pp.393-398
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• 1991

실제 실험 시간에 따른 시료의 무게변화와 생성가스의 조성 측정을 동시에 진행할 수 있는 실험실 규모의 장치를 칸 발란스를 이용하여 제작하였다. 급속 가열이 가능하도록 텅스텐 할로겐 등을 이용한 복사가열 방식을 채택하였고 시료 접시는 복사열을 충분히 흡수하도록 흑연을 사용하였다. 석탄가스화 실험조건에서 이 흑연이 반응기체와 반응하는 것을 막기위하여 실리콘나이트로 코팅하였고, 시료접시 바로 밑에 위치한 열전쌍에도 같은 방식으로 제작된 흑연 모자를 씌워 복사열 흡수능력이 서로 다른 흑연(시료접시)과 금속체(열전쌍) 사이에서 생길 수 있는 온도 측정의 오차를 최소화 하도록 하였다. 이 장치를 사용한 결과 상온에서 섭씨 800도까지 3 분 이내에 온도상승이 가능하였으며 시료 접시의 무게변화없이 실험중 석탄 시료의 무게 변화와 가스조성을 동시에 측정할 수 있었다.

• 대한기계학회:학술대회논문집
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• 대한기계학회 2007년도 춘계학술대회A
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• pp.602-607
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• 2007

The heavy duty diesel engine must have a large output for maintaining excellent mobility. The compacted graphite iron (CGI) is a material currently under study for the engine demanded for high torque, durability, stiffness and fatigue. In this study, three dimensional finite element model of a heavy-duty diesel engine was developed to conduct the stress analysis by using property of CGI. The FE model of the heavy duty diesel engine section consisting with four half cylinder was selected. The heavy duty diesel engine section include cylinder block, cylinder head, liner, bearing cap, bearing and bolt. The loading conditions of engine are pre-fit load, assembly force and gas force.

• Current Applied Physics
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• 제18권11호
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• pp.1345-1351
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• 2018

To allow stable cycling of layered nickel-rich cathode material at high voltage, silyl-functionalized dimethoxydimethylsilane is proposed as a multi-functional additive. In contrast to typical functional additive, dimethoxydimethylsilane does not make artificial cathode-electrolyte interfaces by electrochemical oxidation because it is quite stable under anodic polarization. We find that dimethoxydimethylsilane mainly focuses on scavenging nucleophilic fluoride species that can be produced by electrolyte decomposition during cycling, leading to improving interfacial stability of both nickel-rich cathode and graphite anode. As a result, the cell cycled with dimethoxydimethylsilane-controlled electrolyte exhibits 65.7% of retention after 100 cycle, which is identified by systematic spectroscopic analyses for the cycled cell.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.232-233
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• 2008

The 4H-SiC schottky diodes treated by the various dry etch methods were fabricated and electrically characterized. The post etch process including an Inductively Coupled Plasma(ICP) etch and a Neutron Beam Etch(NBE) was performed after a high-temperature activation annealing without graphite cap in order to eliminate the damaged surface generated during the activation annealing. The reverse leakage current of diode treated by ICP was 1/35 times lower than that of the diode without any post etch at the anode bias of -100V, while the reverse leakage current of diode treated by NBE was 1/44 times lower at the same bias.