• 한국진공학회:학술대회논문집
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• 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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• pp.60-60
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• 2015

Nanosheets of graphene and related 2D materials have attracted much attention due to excellent physical, chemical and mechanical properties. Single-layer graphene (SLG) was first synthesized by Blakely et al in 1974 [1]. Following his achievements, we initiated the growth and characterization of graphene and h-BN on metal substrates using surface segregation and precipitation in 1980s [2,3]. There are three important steps for nanosheet growth; surface segregation of dopants, surface reaction for monolayer phase, and subsequent 3-D growth (surface precipitation). Surface phase transition was clearly demonstrated on C-doped Ni(111) by in situ XPS at elevated temperatures [4]. The growth mode was clarified by inelastic background analysis [5]. The surface segregation approach has been applied to C-doped Pt(111) and Pd(111), and controllable growth of SLG has been demonstrated successfully [6]. Recently we proposed a promising method for producing SLG fully covering an entire substrate using Ni films deposited on graphite substrates [7]. A universal method for layer counting has been proposed [8]. In this paper, we will focus on the effect of competitive surface-site occupation between carbon and other surface-active impurities on the graphene growth. It is known that S is a typical impurity of metals and the most surface-active element. The surface sites shall be occupied by S through surface segregation. In the case of Ni(110), it is confirmed by AES and STM that the available surface sites is nearly occupied by S with a centered $2{\times}2$ arrangement. When Ni(110) is doped with C, surface segregation of C may be interfered by surface active elements like S. In this case, nanoscopic characterization has discovered a preferred directional growth of SLG, exhibiting a square-like shape (Fig. 1). Also the detailed characterization methodologies for graphene and h-BN nanosheets, including AFM, STM, KPFM, AES, HIM and XPS shall be discussed.

• 멤브레인
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• 제27권3호
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• pp.216-225
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• 2017

원자 수준의 두께를 가지는 그래핀 단일층이 흑연으로부터 박리되어 구현된 이래로, 그래핀은 2차원 소재의 활용 가능성을 연 물질로서 각광받고 있으며, 그래핀 고유의 뛰어난 물리적 특성으로 인하여 활발히 연구되고 있다. 특히 분리막 분야는 그래핀과 산화 그래핀이 활용 가능한 가장 중요한 분야 중의 하나로서, 최근의 다양한 시뮬레이션 연구를 통하여 그 가능성이 입증되고 있다. 그래핀과 산화 그래핀은 원자 수준의 얇은 두께, 뛰어난 기계적 강도, 높은 수준의 내화학성, 기공생성이 가능한 2차원 구조 또는 기체 확산 유로 생성이 가능한 적층 구조 등 분리막 소재로서 매우 유리한 특성들을 보유하고 있음이 밝혀졌다. 본 총설에서는 그래핀과 산화 그래핀의 고유 특성을 기반으로 기체 분리막 분야로의 응용 가능성과 현재까지의 개발 현황 및 향후 전망에 대하여 논하고자 한다.

• 한국재료학회지
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• 제32권12호
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• pp.522-527
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• 2022

Among efforts to improve techniques for the chemical vapor deposition of large-area and high-quality graphene films on transition metal substrates, being able to reliably transfer these atomistic membranes onto the desired substrate is a critical step for various practical uses, such as graphene-based electronic and photonic devices. However, the most used approach, the wet etching transfer process based on the complete etching of metal substrates, remains a great challenge. This is mainly due to the inevitable damage to the graphene, unintentional contamination of the graphene layer, and increased production cost and time. Here, we report the systematic study of an H₂ bubbling-assisted transfer technique for graphene films grown on Cu foils, which is nondestructive not only to the graphene film but also to the Cu substrate. Also, we demonstrate the origin of the graphene film tearing phenomenon induced by this H₂ bubbling-assisted transfer process. This study reveals that inherent features are produced by rolling Cu foil, which cause a saw-like corrugation in the poly(methyl methacrylate) (PMMA)/graphene stack when it is transferred onto the target substrate after the Cu foil is dissolved. During the PMMA removal stage, the graphene tearing mainly appears at the apexes of the corrugated PMMA/graphene stack, due to weak adhesion to the target substrate. To address this, we have developed a modified heat-press-assisted transfer technique that has much better control of both tearing and the formation of residues in the transferred graphene films.

• Bulletin of the Korean Chemical Society
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• 제35권1호
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• pp.253-256
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• 2014

Functionalization of zigzag graphene nanoribbon (ZGNR) segment containing 120 C atoms with pyridine (3NV-ZGNR) defects was investigated on the basis of density-functional theory (DFT) calculations, results show that edge-modified ZGNRs by Sc can adsorb multiple hydrogen molecules in a quasi-molecular fashion, thereby can be a potential candidate for hydrogen storage. The stability of Sc functionalization is dictated by a strong binding energy, suggesting a reduction of clustering of metal atoms over the metal-decorated ZGNR.

• Structural Monitoring and Maintenance
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• 제4권2호
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• pp.107-113
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• 2017

In this paper, we present a strain-sensitive composite skin-like film made up of piezoresistive zinc oxide (ZnO) nanorods embedded in a flexible poly(dimethylsiloxane) substrate, with added reduced graphene oxide (rGO) to facilitate connections between the nanorod clusters and increase strain sensitivity. Preparation of the composite is described in detail. Cyclic strain sensing tests are conducted. Experiments indicate that the resulting ZnO-PDMS/rGO composite film is strain-sensitive and thus capable of sensing cycling strain accurately. As such, it has the potential to be molded on to a structure (civil, mechanical, aerospace, or biological) in order to provide a strain sensing skin.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.391-392
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• 2012

Graphene is a perfectly two-dimensional (2D) atomic crystal which consists of sp2 bonded carbon atoms like a honeycomb lattice. With its unique structure, graphene provides outstanding electrical, mechanical, and optical properties, thus enabling wide variety of applications including a strong potential to extend the technology beyond the conventional Si based electronic materials. Currently, the widespread application for electrostatically switchable devices is limited by its characteristic of zero-energy gap and complex process in its synthesis. Several groups have investigated nanoribbon, strained, or nanomeshed graphenes to induce a band gap. Among various techniques to synthesize graphene, chemical vapor deposition (CVD) is suited to make relatively large scale growth of graphene layers. Direct growth of graphene on hexagonal boron nitride (h-BN) using CVD has gained much attention as the atomically smooth surface, relatively small lattice mismatch (~1.7％) of h-BN provides good quality graphene with high mobility. In addition, induced band gap of graphene on h-BN has been demonstrated to a meaningful value about ~0.5 eV.[1] In this paper, we report the synthesis of grpahene / h-BN bilayer in a chemical vapor deposition (CVD) process by controlling the gas flux ratio and deposition rate with temperature. The h-BN (99.99％) substrate, pure Ar as carrier gas, and $CH_4$ are used to grow graphene. The number of graphene layer grown on the h-BN tends to be proportional to growth time and $CH_4$ gas flow rate. Epitaxially grown graphene on h-BN are characterized by scanning electron microscopy, atomic force microscopy, and Raman spectroscopy.

• Advances in nano research
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• 제9권4호
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• pp.221-235
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• 2020

The following composition establishes a nonlocal strain gradient plate model that is essentially related to mass sensors laying on Winkler-Pasternak medium for the vibrational analysis from graphene sheets. To achieve a seemingly accurate study of graphene sheets, the posited theorem actually accommodates two parameters of scale in relation to the gradient of the strain as well as non-local results. Model graphene sheets are known to have double variant shear deformation plate theory without factors from shear correction. By using the principle of Hamilton, to acquire the governing equations of a non-local strain gradient graphene layer on an elastic substrate, Galerkin's method is therefore used to explicate the equations that govern various partition conditions. The influence of diverse factors like the magnetic field as well as the elastic foundation on graphene sheet's vibration characteristics, the number of nanoparticles, nonlocal parameter, nanoparticle mass as well as the length scale parameter had been evaluated.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.51-51
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• 2011

We have grown nanocrystalline graphite on sapphire substrate by using solid carbon source molecular beam epitaxy. Changes of structure from amorphous carbon to nanocrystalline graphite controlled by the growth temperature have been investigated by Raman spectroscopy. Raman spectra show D, G, and 2D peaks, whose intensities vary on the growth temperature. Atomic force microscopy reveals that the surface is very flat. Sapphire substrates of different cutting direction produce similar results. Simulations suggest that the interaction between carbon and oxygen causes disorders. Electrical transport measurements exhibit a Dirac-like peak, including a carrier type change by an external gate voltage bias.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.430-430
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• 2013

Field effect transistor based on semiconductor nanowires has been attracting lots of concerns and studies of scientists because of its different characteristic comparing with other morphology like thin film. Nowadays, graphene is introducing a great promise as an active layer in field effect transistor due to its unique electronic and optoelectronic properties. Thus, a mix structure between etched graphene and semiconductor nanowires is believed to expose novel electrical characteristics. In this study, CuO nanowires (20~80 nm in diameter and $1{\sim}10{\mu}m$ length) were grown during oxidizing Cu foil at $450^{\circ}C$ for 24 h. Besides, 3-layersetched graphene was deposited on Cu foil at $1,000^{\circ}C$ using a feedstock of $CH_4$/$H_2$ mixed gas in CVD system. A structure of Ni/Au electrode + CuO nanowires + etched graphene was fabricated, afterward. Finally, field effect properties of the device was revealed and compared with individual devices of just nanowires and just graphene.

• 공업화학
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• 제30권3호
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• pp.324-330
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• 2019

Petal-like nickel cobaltite ($NiCo_2O_4$)/reduced graphene oxide (rGO) composites with different $rGO-to-NiCo_2O_4$ weight ratios were synthesized using a simple hydrothermal method and subsequent thermal treatment. In the $NiCo_2O_4/rGO$ composite, the $NiCo_2O_4$ 3-dimensional nanomaterials contributed to the improvement of electrochemical properties of the final composite material by preventing the restacking of the rGO sheet and securing ion movement passages. The composite structure was examined by field-emission scanning electron microscopy (FE-SEM), transmission electron microscopy (TEM), and Fourier-transform infrared (FT-IR) spectroscopy. The FE-SEM and TEM images showed that petal-like $NiCo_2O_4$ was supported on the rGO surface. Cyclic voltammetry (CV), galvanostatic charge-discharge (GCD), and electrochemical impedance spectroscopy (EIS) were used for the electrochemical analysis of composites. Among the prepared composites, $0.075g\;rGO/NiCo_2O_4$ composite showed the highest specific capacitance of $1,755Fg^{-1}$ at a current density of $2Ag^{-1}$. The cycle performance and rate capability of the composite material were higher than those of using the single $NiCo_2O_4$ material. These nano-structured composites could be regarded as valuable electrode materials for supercapacitors that require superior performance.