• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.376-376
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• 2012

Semiconductor nanowires (NWs) are future building block for nano-scale devices. Especially, Ge NWs are fascinated material due to the high electrical conductivity with high carrier mobility. It is strong candidate material for post-CMOS technology. However, thermal stability of Ge NWs are poor than conventional semiconductor material such as Si. Especially, when it reduced size as small as nano-scale it will be melted around CMOS process temperature due to the melting point depression. Recently, Graphene have been intensively interested since it has high carrier mobility with single atomic thickness. In addition, it is chemically very stable due to the $sp^2$ hybridization. Graphene films shows good protecting layer for oxidation resistance and corrosion resistance of metal surface using its chemical properties. Recently, we successfully demonstrated CVD growth of monolayer graphene using Ge catalyst. Using our growth method, we synthesized Ge/graphene core/shell (Ge@G) NW and conducted it for highly thermal stability required devices. We confirm the existence of graphene shell and morphology of NWs using SEM, TEM and Raman spectra. SEM and TEM images clearly show very thin graphene shell. We annealed NWs in vacuum at high temperature. Our results indicated that surface melting phenomena of Ge NWs due to the high surface energy from curvature of NWs start around $550^{\circ}C$ which is $270^{\circ}C$ lower than bulk melting point. When we increases annealing temperature, tip of Ge NWs start to make sphere shape in order to reduce its surface energy. On the contrary, Ge@G NWs prevent surface melting of Ge NWs and no Ge spheres generated. Furthermore, we fabricated filed emission devices using pure Ge NWs and Ge@G NWs. Compare with pure Ge NWs, graphene protected Ge NWs show enhancement of reliability. This growth approach serves a thermal stability enhancement of semiconductor NWs.

• Proceedings of the Korean Vacuum Society Conference
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• 2008.08a
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• pp.225-225
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• 2008

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.213-213
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• 2013

Even weak van der Waals (vdW) adhesion between two-dimensional solids may perturbtheir various materials properties owing to their low dimensionality. Although the electronic structure of graphene has been predicted to be modified by the vdW interaction with other materials, its optical characterization has not been successful. In this report, we demonstrate that Raman spectroscopy can be utilized to detect a few % decrease in the Fermi velocity ($v_F$) of graphene caused by the vdW interaction with underlying hexagonal boron nitride (hBN). Our study also establishes Raman spectroscopic analysis which enables separation of the effects by the vdW interaction from those by mechanical strain or extra charge carriers. The analysis reveals that spectral features of graphene on hBN are mainly affected by change in vF and mechanical strain, but not by charge doping unlike graphene supported on $SiO_2$ substrates. Graphene on hBN was also found to be less susceptible to thermally induced hole doping.

• Current Optics and Photonics
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• v.1 no.1
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• pp.65-72
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• 2017

We propose a nearly lossless, compact, electrically modulated vertical directional coupler, which is based on the controllable evanescent coupling in a previously proposed graphene-assisted total internal reflection (GA-FTIR) scheme. In the proposed device, two single-mode waveguides are separate by graphene-$SiO_2$-graphene layers. By changing the chemical potential of the graphene layers with a gate voltage, the coupling strength between the waveguides, and hence the coupling length of the directional coupler, is controlled. Therefore, for a properly chosen, fixed device length, when an input wave is launched into one of the waveguides, the ratio of their output powers can be controlled electrically. The operation of the proposed device is analyzed, with the dispersion relations calculated using a model of a one-dimensional slab waveguide. The supermodes in the coupled waveguide are calculated using the finite-element method to estimate the coupling length, realistic devices are designed, and their performance was confirmed using the finite-difference time-domain method. The designed $3{\mu}m$ by $1{\mu}m$ device achieves an insertion loss of less than 0.11 dB, and a 24-dB extinction ratio between bar and cross states. The proposed low-loss device could enable integrated modulation of a strong optical signal, without thermal buildup.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.387-387
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• 2012

그래핀(graphene)의 가장자리(edge)는 결정구조의 배향성에 따라 지그재그(zigzag)와 안락의자 (armchair) 형태로 구분되는데, 나노미터 크기의 그래핀의 전자적 성질은 이러한 가장자리의 배향성에 의해 크게 영향을 받는다고 알려져 있다. 단일층 그래핀 가장자리 사이에서 일어나는 산화실리콘($SiO_2$)의 carbothermal reduction은 선택적으로 지그재그 형태의 가장자리를 생성한다고 알려져 있다. 본 연구에서는 라만 분광법과 원자 현미경(atomic force microscopy)을 이용하여 기계적 박리법으로 만들어진 이중층 그래핀에서 일어나는 carbothermal reaction을 연구하였다. 고온 산화 방법으로 이중층 그래핀에 원형 식각공(etch pit)을 만들고 Ar 기체 속에서 700도 열처리를 진행한 후, 원형 식각공이 육각형으로 확장된 것을 관찰하였다. 이것은 이중층 그래핀도 산화실리콘의 carbothermal reduction을 유발한다는 사실을 보여준다. 그러나 이중층 그래핀의 반응속도는 단일층보다 느린 것이 확인되었는데, 이는 이중층 그래핀의 탄소 원자와 산화제로 작용하는 산화실리콘 간의 평균 거리가 단일층보다 더 크다는 사실로 설명할 수 있다. 또한 본 연구에서는 반응기 내의 압력이 반응 속도에 미치는 영향과 식각공이 육각형으로 변해가는 과정에 대한 라만 분광 특성을 조사 및 분석하였다.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.159-159
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• 2011

최근 여러 화학 반응에 대해서 일층(1L) 그래핀(graphene)이 복층(multi-layered) 그래핀보다 10 배 이상의 높은 반응성을 보인다는 사실이 알려졌다. 본 실험에서는 기판의 편평도와 기판-그래핀 간의 상호작용이 그래핀의 반응성에 미치는 영향을 이해하기 위해서, AFM(atomic force microscopy)과 라만 분광법을 이용하여 그래핀의 기체상 고온 산화반응을 연구하였다. 기계적 박리법을 통해 산화실리콘(SiO2/Si)과 마이카(mica) 기판 위에 고착된 그래핀 시료를 대조군으로 비교하였다. AFM 형상 분석으로부터 편평도가 낮은 산화실리콘 위에서는 그래핀의 두께가 작을수록 산화 속도가 크다는 사실을 확인하였다. 그러나 편평도가 높은 마이카 기판 위에서는 단일층 그래핀의 산화 속도가 산화실리콘 기판 위에서보다 현저하게 감소하고 두 겹 이상의 두께에서는 반응성의 차이가 없음을 발견하였다. 특히 마이카 위의 단일층 그래핀에서는 복층 그래핀과는 달리 산화에 의한 식각이 거의 일어나지 않아 화학적 안정성이 증대되었음을 알 수 있었다. 본 연구는 기판의 표면구조와 상호 작용을 통해 그래핀의 화학적 특성을 조절 할 수 있다는 가능성을 보여 준다.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.209-209
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• 2013

그래핀(graphene)의 가장자리(edge)는 결정구조의 배향성에 따라 지그재그(zigzag)와 안락의자(armchair) 형태로 구분되는데, 나노미터 크기의 그래핀의 전자적 성질은 이러한 가장자리의 배향성에 의해 크게 영향을 받는다고 알려져 있다. 단일층 그래핀 가장자리 사이에서 일어나는 산화실리콘($SiO_2$)의 carbothermal reduction은 선택적으로 지그재그 형태의 가장자리를 생성한다고 알려져 있다. 본 연구에서는 라만 분광법과 원자 현미경(atomic force microscopy)을 이용하여 기계적 박리법으로 만들어진 이중층 그래핀에서 일어나는 carbothermal reaction을 연구하였다. 고온 산화 방법으로 이중층 그래핀에 원형 식각공(etch pit)을 만들고 Ar 기체 속에서 700도 열처리를 진행한 후, 원형 식각공이 육각형으로 확장된 것을 관찰하였다. 이것은 이중층 그래핀도 산화실리콘의 carbothermal reduction을 유발한다는 사실을 보여준다. 그러나 이중층 그래핀의 반응속도는 단일층보다 5배 정도 느린 것이 확인되었는데, 이는 이중층 그래핀의 탄소원자와 산화제로 작용하는 산화실리콘 간의 평균 거리가 단일층보다 더 크다는 사실로 설명할 수 있다. 또한 단일층과 이중층 그래핀 모두 1 기압 Ar 분위기에서보다 진공상태에서 반응속도가 현저히 작다는 사실이 관찰되었다. 진공도와 온도에 따른 반응속도로부터 반응 메커니즘 및 활성화 에너지에 대해 고찰하고자 한다.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.79-79
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• 2013

Quantum-structures with nanoparticles have been attractive for various electronic and photonic devices [1,2]. In recent, nonvolatile memories such as nano-floating gate memory (NFGM) and resistance random access memory (ReRAM) have been studied using silicides, metals, and metal oxides nanoparticles [3,4]. In this study, we fabricated nonvolatile memories with silicides (WSi2, Ti2Si, V2Si) and metal-oxide (Cu2O, Fe2O3, ZnO, SnO2, In2O3 and etc.) nanoparticles embedded in polyimide matrix, and photovoltaic device also with SiC nanoparticles. The capacitance-voltageand current-voltage data showed a threshold voltage shift as a function of write/erase voltage, which implies the carrier charging and discharging into the metal-oxide nanoparticles. We have investigated also the electrical properties of ReRAM consisted with the nanoparticles embedded in ZnO, SiO2, polyimide layer on the monolayered graphene. We will discuss what the current bistability of the nanoparticle ReRAM with monolayered graphene, which occurred as a result of fully functional operation of the nonvolatile memory device. A photovoltaic device structure with nanoparticles was fabricated and its optical properties were also studied by photoluminescence and UV-Vis absorption measurements. We will discuss a feasibility of nanoparticles to application of nonvolatile memories and photovoltaic devices.

• Journal of Magnetics
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• v.18 no.3
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• pp.225-229
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• 2013

We report a measurement for the anomalous Nernst effects induced by a temperature gradient in [CoSiB/Pt] multilayer films with perpendicular magnetic anisotropy. The Nernst voltage shows a characteristic hysteresis which reflects the magnetization of the film as in the case of the anomalous Hall effects. With a local heating geometry, we also measure the dependence of the anomalous Nernst voltage on the distance d from the heating element. It is roughly proportional to $1/d^{1.3}$, which can be conjectured from the expected temperature gradient along the sample from the heat equation.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.282.1-282.1
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• 2016

The remarkable physical properties of two-dimensional (2D) semiconducting materials such as molybdenum disulfide ($MoS_2$) and tungsten disulfide ($WS_2$) etc. have attracted considerable attentions for future high-performance electronic and optoelectronic devices. The ongoing studies of $MoS_2$ based nonvolatile memories have been demonstrated by worldwide researchers. The opening hysteresis in transfer characteristics have been revealed by different charge confining layer, for instance, few-layer graphene, $MoS_2$, metallic nanocrystal, hafnium oxide, and guanine. However, limited works built their nonvolatile memories using entirely of assembled 2D crystals. This is important in aspect view of large-scale manufacture and vertical integration for future memory device engineering. We report $WS_2$ based nonvolatile memories utilizing functional van der Waals heterostructure in which multi-layered graphene is encapsulated between $SiO_2$ and hexagonal boron nitride (hBN). We experimentally observed that, large memory window (20 V) allows to reveal high on-/off-state ratio (>$10^3$). Moreover, the devices manifest perfect retention of 13% charge loss after 10 years due to large graphene/hBN barrier height. Interestingly, the performance of our memories is drastically better than ever published work related to $MoS_2$ and black phosphorus flash memory technology.