• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.3
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• pp.231-236
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• 2005

To investigate the electrical properties at the single grainboundary of ZnO varistors, micro-electrodes were fabricated on the surface which was polished and thermally etched. Our micro-electrode had 2000 $\AA$ silicon nitride layer between micro-electrode and ZnO surface. This layer was deposited by PECVD and etched by RIE after photoresistor pattering process using by mask 1. The metal patterning of micro-electrodes used lift-off method. We found that the breakdown voltage of single grainboundary is about 3.5∼4.2 V at 0.1 mA on I-V curves. Also, capacitance-voltage measurement at single grainboundary gave several parameters( $N_{d}$, $N_{t}$, $\Phi$$_{b}$, t) which were related with grainboundary.ary.

• Solar Energy
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• v.5 no.2
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• pp.54-59
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• 1985

Due to the grainboundary recombination and the poor diffusion length, the polycrystalline cell efficiency is lower than the singlecrystalline cell. In order to define the effect of grains and grain-boundaries, 2 - dimensional differential diffusion equations of minority carrier are modelled. To solve them, two theoretical formulas are derived, which can be evaluated the grainboundary recombination velocity and the grain diffusion length. Also computer-aided numerical analysis is given.

• Electrical & Electronic Materials
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• v.8 no.1
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• pp.40-47
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• 1995

Electrical properties of ZnO ceramics based on Bi oxide was investigated in relation to sintering temperature. In the temperature range >$1150^{\circ}C$ to >$1350^{\circ}C$ the grain size increased from 9.mu.m to 20.mu.m when the sintering temperature was raised. The leakage current in the low voltage range increased as the potential barrier decreases, which is caused by increasing the grain size at high temperature. The dielectric characteristics of the ZnO ceramics was also affected by sintering temperature. Large dielectric constant was attributed, to the grainboundary layer of polycrystalline ZnO ceramics and decreasing grainboundary width. The variation of breakdown voltage with sintering temperature was attributed to the change of the donor concentration in the ZnO grain and grain size. The results showed that breakdown voltage increased decreasing grain size and donor concentration. Nonohmic coefficient was associated with the lower breakdown voltage per grainboundary layer due to the grain growth and higher donor concentration.

• 연구논문집
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• s.30
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• pp.121-128
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• 2000

The failed tube received for this study has been used for approximately 10 year at $330^{\circ}C$ in a steam production boiler tube was fractured in the transversed direction to tube length, and fracture mode was typically intergranulas type without the plastic deformation. The fracture surface was covered by the oxide scale formed from the intermal high pressure steam at high temperature. The microstructure was not nearly thermal-degraded during the service. From this result, we can conclude that the oxide film was proferentialy formed into the grainboundary and this grainboundary oxide film was brittle-fractured by the thermal stress in the longitudinal direction to the tube brittle intergranular fracture mode.

• Proceedings of the Korean Nuclear Society Conference
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• 1999.05a
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• pp.291-291
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• 1999

• Fire Science and Engineering
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• v.10 no.4
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• pp.3-12
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• 1996

The aim of the present study is to find out the effect of cooling rate on the electrical behavior of ZnO varistors. The microstructure, 1-V characteristics and complex impedance spectra were investigated under the change of cooling rates. It is found that at cooling rate $200^{\circ}$/h, nonlinearity and breakdown voltage reached a maximum value which may show that good intergranular layer is formed as a results of proper cooling rate. Complex Impedance spectras were measured as a function of frequency range 100Hz to 13MHz to determine grain and grainboundary resistance. The semicircles were attributed to the dependence of grain and grainboundary resistance on cooling rates.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.05c
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• pp.25-28
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• 2001

The objectives of this paper are to demonstrate the electrical degradation phenomena with Si atom's behaviors in the grainboundary of semiconducting ZnO ceramics. The ZnO ceramic devices used in this investigation were fabricated by standard ceramic techniques. Especially, $SiO_2$ were added to analyze the degradation characteristics with Si and sintered in oxygen ambient at $1300^{\circ}C$. The conditions of DC degradation test were $115{\pm}2^{\circ}C$ for 13h. Using XRD and SEM, the phase and microstructure of samples were analyzed respectively. E-J analysis was used to determine $\alpha$. Frequency analysis was accomplished to understand $R_g$ and $R_b$ at the equivalent circuit. Electrical stability improved as the amount of $SiO_2$ addition increased. This results were explain by the quantitative analysis and the line scanning method of EPMA.

• Proceedings of the Korean Society of Tribologists and Lubrication Engineers Conference
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• 1999.06a
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• pp.119-126
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• 1999

The rolling fatigue lives (RFL) of five kinds of silicon nitride balls were investigated. Four kinds of Si$_3$N$_4$ balls were fabricated using different raw materials, sintering aids and sintering conditions, Commercially available Si3N4 ball was also studied for comparison. All the balls were finished up to the dimensional accuracy of Grade 10 defined in KS B 2001 (Steel Balls for Ball Bearings) with a size of 9.525mm. RFL tests were then conducted under the initial theoretical maximum contact stress 6.38 GPa and the spindle speed 10,000 rpm. Gear oil was provided by oiled race as lubricant. The results of RFL test indicated the prerequisitic conditions for the long rolling life of Si$_3$N$_4$ball : (1) the high density, (2) mjcrostructures consisted of small uniformly distributed grains, (3) little glassy phase in grainboundary, and (4) little crystalline phase and secondary phase that induces residual thermal stress due to the differences of thermal expansion coefficient with Si$_3$N$_4$Phase.

• Journal of the Korean Institute of Telematics and Electronics
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• v.24 no.6
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• pp.986-991
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• 1987

To establish the basic composition of low voltage varistor and to find the role of each compont in detail, we investigated the electrical properties and the microstructures. As a result, ZnO 1.0m/oBi2O3-1.0m/oCo2kO3-0.2m/oMnO2 system was optimum for low voltage varisor. We found that Bi2o3 promotes grain growth of ZnO and that Co2O3 doped in ZnO grain lowers the nonlinear resistance and MnO2 mainly existed near the ZnO grainboundary elevates nonlinear resistance.

• Tribology and Lubricants
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• v.15 no.2
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• pp.150-155
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• 1999

The rolling fatigue lives (RFL) of five kinds of silicon nitride balls were investigated. Four kinds of Si$_3$N$_4$balls were fabricated using different raw materials, sintering aids and sintering conditions. Commercially available Si$_3$N$_4$ball was also studied for comparison. All the balls were finished up to the dimensional accuracy of Grade 10 defined in KS B 2001 (Steel Balls fer Ball Bearings) with a size of 9.525 mm. RFL tests were then conducted under the initial theoretical maximum contact stress 6.38 GPa and the spindle speed 10,000 rpm. Gear oil was provided by oiled race as lubricant. The results of RFL test indicated the prerequisitic conditions for the long rolling life of Si$_3$N$_4$ball : (1) the high density, (2) microstructures consisted of small uniformly distributed grains, (3) little glassy phase in grainboundary, and (4) little crystalline phase and secondary phase that induces residual thermal stress due to the differences of thermal expansion coefficient with Si$_3$N$_4$phase.