• Current Photovoltaic Research
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• 제1권2호
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• pp.109-114
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• 2013

$Cu_2ZnSnS_4$ (CZTS) nanoparticles were synthesized by a solvothermal method using copper (II) acetate, zinc acetate, tin chloride, and sulfur in diethylenetriamine solvent. Binary sulfide particles such as CuS, ZnS, SnS, and $SnS_2$ were obtained at $180^{\circ}C$; single-phase CZTS nanoparticles were obtained at $280^{\circ}C$. CZTS nanoparticles with spherical shape and grain size of 40 to 60 nm were obtained at $280^{\circ}C$. In the middle of 180 and $280^{\circ}C$, CZTS and ZnS phases were found. The time variation of reaction at $280^{\circ}C$ revealed that an amorphous state formed first instead of binary phases and then the amorphous phase was converted to crystalline CZTS state; it is different reaction path way from conventional solid-state reaction path of which binary phases react to form CZTS. CZTS films deposited and annealed from single-phase nanoparticles showed porous microstructure and poor adhesion. This indicates that a combination of CZTS and other flux phase is necessary to have a dense film for device fabrication.

• 한국재료학회지
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• 제17권9호
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• pp.484-488
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• 2007

Mo(Ti) alloy and pure Cu thin films were subsequently deposited on $SiO_2-coated$ Si wafers, resulting in $Cu/Mo(Ti)/SiO_2$ structures. The multi-structures have been annealed in vacuum at $100-600^{\circ}C$ for 30 min to investigate the outdiffusion of Ti to Cu surface. Annealing at high temperature allowed the outdiffusion of Ti from the Mo(Ti) alloy underlayer to the Cu surface and then forming $TiO_2$ on the surface, which protected the Cu surface against $SiH_4＋NH_3$ plasma during the deposition of $Si_3N_4$ on Cu. The formation of $TiO_2$ layer on the Cu surface was a strong function of annealing temperature and Ti concentration in Mo(Ti) underlayer. Significant outdiffusion of Ti started to occur at $400^{\circ}C$ when the Ti concentration in Mo(Ti) alloy was higher than 60 at.%. This resulted in the formation of $TiO_2/Cu/Mo(Ti)\;alloy/SiO_2$ structures. We have employed the as-deposited Cu/Mo(Ti) alloy and the $500^{\circ}C-annealed$ Cu/Mo(Ti) alloy as gate electrodes to fabricate TFT devices, and then measured the electrical characteristics. The $500^{\circ}C$ annealed Cu/Mo($Ti{\geq}60at.%$) gate electrode TFT showed the excellent electrical characteristics ($mobility\;=\;0.488\;-\;0.505\;cm^2/Vs$, on/off $ratio\;=\;2{\times}10^5-1.85{\times}10^6$, subthreshold = 0.733.1.13 V/decade), indicating that the use of Ti-rich($Ti{\geq}60at.%$) alloy underlayer effectively passivated the Cu surface as a result of the formation of $TiO_2$ on the Cu grain boundaries.

• 대한전기학회논문지
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• 제41권5호
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• pp.517-524
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• 1992

In this study, 0.10Pb(SbS11/2TSnS11/2T)OS13T-(0.90-x)PbZrOS13T (0.25 x 0.40) ceramics were fabricated by the atmospheric method. The sintering temperature and time were 1250[$^{\circ}C$] and 2[2hr], respectively. The structureal, dielectric and piezoelectric properties with composition of PbTiOS13T were studied. As the results of XRD ans SEM, the crystal structure of a specimen was rhombohedral, lattice constant and average grain size were decreased with increasing the contents of PbTiOS13T. Relative dielectric constant and Curie temperature were increased with increasing the contents of PbTiOS13T, 0.10PSS-0.40PT-0.50PZ specimen had the highest values of 904 and 265[$^{\circ}C$], respectively. In increasing of PbTiOS13T contents form 25[mol%] to 40[mol%], piezoelectric charge constant and electromechanical coupling factors were increased form 114[pC/N] to 142[pC/N], 17[%] to 24[%] and mechanical quality factor were decreased with increasing the contents of PbTiOS13T. In the 0.10PSS-0.40PT-0.50PZ specimens, those values were 14.2[kV/cm] and 9.43[x10S0-6TC/cmS02T], resectively.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.296-296
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• 2007

Ferroelectric neodymium-substituted $Bi_4Ti_3O_{12}$(BTO) thin films have been successfully deposited on Pt/Ti/$SiO_2$/Si substrate by a sol-gel spin-coating process and the effect of crystallization temperature on their microstructure and ferroelectric properties were studied systematically. $Bi(TMHD)_3$, $Nd(TMHD)_3$, $Ti(O^iPr)_4$ were used as the precursors, which were dissolved in 2-methoxyethanol. The thin films were annealed at various temperatures from 600 to $720^{\circ}C$ in oxygen ambient for 1 hr, which was followed by post-annealed for 1 hr after depositing a Pt electrode to enhance the electrical properties. X-ray diffraction (XRD) and scanning electron microscopy (SEM) were used to analyze the crystallinity and surface morphology of layered perovskite phase, respectively. The crystallinity of the BNT films was improved and the average grain size increased as the crystallization temperature increased from 600 to $720^{\circ}C$ at an interval of $40^{\circ}C$. The polarization values of the films were a monotonous function of the crystallization temperature. The remanent polarization value of the BNT thin films annealed at $720^{\circ}C$ was $24.82\;{\mu}C/cm^2$ at an applied voltage of 5 V.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.325-325
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• 2007

The perovskites in the $LaAlO_3-BaZrO_3$ system (i.e., $(1-x)LaAlO_3-xBaZrO_3$ were fabricated by a solid state reaction and their dielectric properties were investigated. For the compositions of x=0.1~0.9, the mixture of $LaAlO_3$ with a rhombohedral structure and $BaZrO_3$ with a cubic was observed when the sintering was conducted at $1500^{\circ}C$, indicating that the solubility of constituent elements was very low and a narrow solid solution region might exist. The large difference of ionic radii between $La^{3+}$ ion (0.136nm, C.N.=12) and $Ba^{2+}$ ion (0.161nm) or $Al^{3+}$ ion (0.0535nm, C.N.=6) and $Zr^{4+}$ ion (0.072nm) might hinder the mutual substitution. Within the compositions of x=0~0.7, the dielectric constant of the mixture increased with the amount of $BaZrO_3$, i.e., x value, which was in good agreement with the logarithmic mixing rule (In $_{r,i}={\Sigma}v_iln\;_{r,i}$). The increase in $BaZrO_3$ doping decreased $Q{\times}f$ value significantly due to the low $Q{\times}f$ value of $BaZrO_3$ itself, a poor microstructure of the mixture with an increased grain boundary area per volume, and defects in the cation and oxygen sub-lattices which were respectively caused by the evaporation of barium during the sintering process and the substitution of Ba on La-site or Al on Zr-site.

• 한국재료학회지
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• 제13권10호
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• pp.645-650
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• 2003

The microstructure and electrical characteristics of $Pr_{6}$ $O_{11}$ -based ZnO varistor ceramics composed of $ZnO-Pr_{6}$ $O_{ 11}$/$-CoO-Cr_2$$O_3$-$Dy_2$$O_3$-based ceramics were investigated with $Dy_2$$O_3$content in the range of 0.0∼2.0 mol%. As $Dy_2$$O_3$content was increased, the average grain size was decreased in the range of 18.6∼4.7 $\mu\textrm{m}$ and the density of the ceramic was decreased in the range of 5.53∼4.34 g/㎤. While, the varistor voltage was increased in the range of 39.4∼436.6 V/mm and the nonlinear exponent was in the range of 4.5∼66.6 with increasing $Dy_2$$O_3$content. The addition of $Dy_2$$O_3$highly enhanced the nonlinear properties of varistors, compared with the varistor without $Dy_2$$O_3$. In particular, the varistor with $Dy_2$$O_3$ content of 0.5 mol% exhibited the highest nonlinearity, in which the nonlinear exponent is 66.6 and the leakage current is 1.2 $\mu\textrm{A}$. The donor concentration and the density of interface states were decreased in the range of $(4.19∼0.33) ${\times}$10^{18}$ //㎤ and $(5.38∼1.74) ${\times}$10^{12}$ $\textrm{cm}^2$, respectively, with increasing $Dy_2$$O_3$content. The minimum dissipation factor of 0.0302 was obtained from 0.5mol% $Dy_2$$O_3$.

• Current Photovoltaic Research
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• 제11권1호
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• pp.8-12
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• 2023

In this work, we investigated the thickness of Ag precursor layer to improve the performance of flexible CIGSe solar cells grown on stainless steel (STS) substrates through three-stage co-evaporation with Ga grading followed by alkali treatments. The small amount of incorporated Ag in CIGSe films showed enhancement in the grain size and device efficiency. With an optimal 6 nm-thick Ag layer, the best cell on the STS substrate yielded more than 16%, which is comparable to the soda-lime glass (SLG) substrate. Thus, the addition of controlled Ag combined with alkali post-deposition treatment (PDT) led to increased open-circuit voltage (VOC), accompanied by the increased built-in potential as confirmed by capacitance-voltage (C-V) measurements. It is related to a reduction of charge recombination at the depletion region. The results suggest that Ag alloying and alkali PDT are essential for producing highly efficient flexible CIGSe solar cells.

• Corrosion Science and Technology
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• 제22권5호
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• pp.359-367
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• 2023

The localized corrosion resistance of the Ni-based Inconel 718 alloy after solution heat treatment was evaluated using electrochemical techniques in a solution of 25 wt% NaCl and 0.5 wt% acetic acid. Solution heat treatment at 1050 ℃ for 2.5 hours resulted in an increased average grain diameter. Both Ti carbides (10 ㎛ diameter) and Nb-Mo carbides (1 - 9 ㎛ diameter) were distributed throughout the material. Despite heat treatment, the shape and composition of these carbides remained consistent. An increase in solution temperature led to a decrease in pitting potential value. However, the pitting potential value of solution heat-treated Inconel 718 was consistently higher than that of as-received Inconel 718 at all tested temperatures. Localized corrosion initiation occurred at 0.4 V_SSE in a temperature environment of 80 ℃ for both as-received and solution heat-treated Inconel 718 alloys. X-ray photoelectron spectroscopic analysis indicated that the composition of the passive film formed on specimen surfaces remained largely unchanged after solution heat treatment, with O1s, Cr2p_3/2, Fe2p_3/2, and Ni2p_3/2 present. The difference in localized corrosion resistance between as-received and solution heat-treated Inconel 718 alloys was attributable to microstructural changes induced by the heat treatment process.

• 한국작물학회지
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• 제34권4호
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• pp.400-407
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• 1989

양액재배에 있어 근류균의 접종, 양액중의 질소농도 및 재식밀도 등의 대두품종의 생육 및 수량에 미치는 영향에 대하여 추구한 결과를 요약하면 다음과 같다. 1. 경장에 미치는 처리효과는 생육중기 (V$_{7}$, Stage)에 있어서는 현저하지 않았으나 개화기미(R$_3$ Stage)에서는 그 효과가 증대되어 근류균 접종에 의하여 경장이 증대되었는데 그 정도는 황금콩과 장백콩에서 더욱 컸고 근류비착생계통에서는 현저히 떨어졌으며 질소시용 또는 195ppm까지의 질소증시에 의하여 증대되었고 밀식에 의하여 증대되었다. 2. 건물중에 미치는 영향은 생육시기에 따라 다소 차이가 있으나 대체로 근류균 접종에 의하여 건물중이 증대되었는데 그 효과는 무질소구에서 더욱 현저하였고 근류비착생 Clark에서는 현저한 감소를 보였으며 질소증시에 의하여 장백콩과 팔달콩에서는 건물중이 계속 증가되었으나 황금콩과 Clark에서는 질소증시효과가 미미하였다. 그리고 밀식에 의하여 건물중이 현저히 감소하여하였는데 특히 팔달콩에서 더욱 현저한 감소를 보였다. 3. 근중에 대한 지상부중 비율은 근류균 접종에 의하여 무질소 또는 저질소 수준에서는 현저히 증가하였고 근류비착생 Clark에서는 현저한 감소를 보였으며 질소증시 및 밀식에 의하여 감소되었으나 팔달콩에서는 질소증시에 의하여 근중에 대한 지상부중 비율이 증가되었다. 4. 폿트당 수량이 미치는 근류균의 접종 효과는 품종간에 차이가 있어 황금콩과 팔달콩에서는 증수효과가 인정되었으나 장백콩과 Clark에서는 현저히 낮았으며 질소증시효과도 품종간에 차이가 있어 황금콩과 팔달콩에서는 질소증시에 의하여 증수되었으나 장백콩과 Clark에서는 증수효과를 나타내지 않았으며 밀식에 의한 증수효과도 황금콩에서는 현저하였으나 기타 품종에서는 뚜렷하지 않았다. 5. 개체당 수량도 황금콩과 팔달콩에서 근류균 접종에 의한 증수효과를 나타내었고 질소시용효과는 밀식조건에서는 질소증시에 의한 증수효과를 나타내었으나 소식조건에서는 근류균을 접종하였을 때는 증수되지 않았으나 근류균을 비접종하였을 때는 팔달콩과 Clark에서 질소증시에 의하여 증수되었다. 그리고 밀식에 의하여 개체당 수량이 전반적으로 감소되었다. 6. 수량은 건물중, 식물체중의 전질소함량, 그리고 개화기미의 근류수와, 식물체중의 전질소함량은 경장, 건물중, 근류수 및 근류중들과, 그리고 줄기중의 allantoin 질소함량은 근류수 및 근류중들과 각각 유의적인 정의 상관관계를 나타내었다.

• 한국재료학회지
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• 제5권8호
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• pp.988-996
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• 1995

CdS/CuInSe$_2$태양전지의 광흡수층인 CuInSe$_2$박막을 In$_2$Se$_3$와 Cu$_2$Se 이원화합물을 precursor로 하여 진공증발법으로 제조하였고 특성을 분석하였다. 먼저 유리기판위에 0.5$\mu\textrm{m}$ 두께의 In$_2$Se$_3$를 susceptor온도를 변화시켜가면서 증착한 결과 40$0^{\circ}C$에서 가장 평탄하고 치밀한 박막이 형성되었다. 그 위에 Cu$_2$Se$_3$를 진공증발시켜 증착함으로써 in-situ로 CuInSe$_2$박막을 형성시키고 In$_2$Se$_3$를 추가로 증발시켜 CuInSe$_2$박막내에 존재하는 제 2상인 Cu$_2$Se를 제거시켰다. 이 경우 susceptor온도가 $700^{\circ}C$ 일때 미세구조가 가장 좋은 CuInSe$_2$박막이 형성되었으며 약 1.2$\mu\textrm{m}$ 두께에서 약 2$\mu\textrm{m}$의 결정립크기와 (112) 우선배향성을 가졌다. 추가 In$_2$Se$_3$양이 증가함에 따라 CuInSe$_2$박막의 조성편차보상으로 hole 농도가 감소하고 전기 비저항이 증가하였고, optical bandgap은 거의 일정한 값인 1.04eV의 값을 가졌다. Mo/유리기판 위에 증착한 CuInSe$_2$박막도 유리기판 위에 증착한 박막과 비슷한 미세구조를 가졌으며, 이 박막을 토대로 ZnO/CdS/CuInSe$_2$/Mo 구조를 갖는 태양전지 구현이 가능할 것으로 생각된다.