• Journal of Electrical Engineering and Technology
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• 제9권3호
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• pp.1009-1015
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• 2014

Chalcopyrite $CuInSe_2$ (CIS) thin films were prepared without Se- / S-containing gas by co-sputtering using $CuSe_2$ and $InSe_2$ selenide-targets and rapid thermal annealing. The grain size increased to a maximum of 54.68 nm with a predominant (112) plane. The tetragonal distortion parameter ${\eta}$ decreased and the inter-planar spacing $d_{(112)}$ increased in the RTA-treated CIS thin films annealed at a $400^{\circ}C$, which indicates better crystal quality. The increased carrier concentration of RTA-treated p-type CIS thin films led to a decrease in resistivity due to an increase in Cu composition at annealing temperatures ${\geq}350^{\circ}C$. The optical band gap energy ($E_g$) of CIS thin films decreased to 1.127 eV in RTA-treated CIS thin films annealed at $400^{\circ}C$ due to the improved crystallinity, elevated carrier concentration and decreased In composition.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
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• pp.382-383
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• 2006

The tungsten bronze type of strontium barium niobate(SBN) thin film was synthesized by metal organic decomposion method for SBN stock solution and the SBN thin film process were deposited by spin-coating process on Pt-deposited si-wafer(100) by magnetron sputtering system. The thickness of SBN thin film was 150~200 nm and were optimized for rpm of spin-coater system. The structural variation of SBN thin film was studied by TG-DTA and XRD. The deposited SBN stock solution on annealing at $400{\sim}800^{\circ}C$ a pure tungsten bronze SBN phase and the corresponding. average grain size about 500~1000 nm influenced by annealing temperature. The piezoelectric properties of prepared SBN thin film, the remanent polarization value(2Pr) and coercive field was $1.2{\mu}C/cm^2$ and 2.15V/cm, respectively.

• Journal of the Korean Physical Society
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• 제73권10호
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• pp.1535-1540
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• 2018

In this study, we prepared and characterized Nb-doped $Li_7La_3Zr_{2-x}O_{12}$ (LLZNO) powder and pellets with a cubic garnet structure by using a modified sol-gel synthesis and hot pressing. LLZNO powder with a very small grain size and cubic structure without secondary phases could be obtained by using a synthesis method in which Li and La sources in a propanol solvent were mixed together with Zr and Nb sources in 2-methoxy ethanol. A pure cubic phase LLZNO pellet could be fabricated from the prepared LLZNO and an additional 6-wt% of $Li_2CO_3$ powder by hot pressing at $1050^{\circ}C$ and 15.8 MPa. The hot-pressed LLZNO pellet with a relative density of 99% exhibited a very dense surface morphology. The total Li ionic conductivity of the hot-pressed LLZNO was $7.4{\times}10^{-4}S/cm$ at room temperature, which is very high level compared to other reported values. The activation energy for ionic conduction was estimated to be 0.40 eV.

• Nuclear Engineering and Technology
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• 제54권3호
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• pp.991-996
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• 2022

Microstructures of monolithic high purity SiC and SiC with sintering additives after neutron irradiation to a fluence of 2.0-2.5 × 10²⁴ n/m² (E > 0.1 MeV) at 333-363 K and after post-irradiation annealing up to 1673 K were observed using a transmission electron microscopy. Results showed that no black spot defects or dislocation loops in SiC grains were found after the neutron irradiation for all of the specimens owing to the moderate fluence at low irradiation temperature. Thus, it is confirmed that these specimens were swelled mostly by the formation of point defects. Black spots and small dislocation loops were discovered only after the annealing process in PureBeta-SiC and CVD-SiC, where the swelling almost diminished. Anomalous-shaped YAG grains were found in SiC ceramics containing sintering additives. These grains contained dense black spots defects and might lose crystallinity after the neutron irradiation, while these defects may annihilate by recrystallization during annealing up to 1673 K. Amorphous grain boundary phase was also presented in this ceramic, and a large part of it was crystallized through post-irradiation annealing and could affect their recovery behavior.

• 한국작물학회:학술대회논문집
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• 한국작물학회 2022년도 추계학술대회
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• pp.17-17
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• 2022

Leaves are an important organism for photosynthesis and transpiration. The shape of leaf is crucial factor affecting plant architecture. V-shape leaf rolling is enhancing canopy photosynthesis by increasing the CO₂ penetration and the light capture by reducing the shadow between the leaves. Therefore, moderate leaf rolling is thought to more high grain yield per area than flat leaf. We investigated 278 KRICE_CORE accession's Adaxial Leaf Rolling Index (LRI) in first heading using the following equation. For each accession, genomic DNA was used for sequencing. We sequenced the genomics with ~8 X coverage to detect SNPS. Raw reads were aligned against the rice reference (IRGSP 1.0) for SNP identification and genotype calling. To generate genotype data for GWAS, SNPs were filtered with minor allele frequency 0.05. Finally, 841,134 high-quality SNPs were used for our GWAS. The significant threshold was -log10(P)>7.23. From the results, 2 significance SNP were detected. Considering the LD block of 250kbp, 60 candidate gene were selected including Hypothetical gene and Conserved gene. In this poster, we analyzed candidate gene affecting adaxial Leaf Rolling through single-trait GWAS.

• 한국작물학회:학술대회논문집
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• 한국작물학회 2022년도 추계학술대회
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• pp.243-243
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• 2022

Leaves are an important organism for photosynthesis and transpiration. The shape of leaf is crucial factor affecting plant architecture. V-shape leaf rolling is enhancing canopy photosynthesis by increasing the CO₂ penetration and the light capture by reducing the shadow between the leaves. Therefore, moderate leaf rolling is thought to more high grain yield per area than flat leaf. We investigated 278 KRICE CORE accession's Adaxial Leaf Rolling Index (LRI) in first heading using the following equation. For each accession, genomic DNA was used for sequencing. We sequenced the genomics with ~8 X coverage to detect SNPS. Raw reads were aligned against the rice reference (IRGSP 1.0) for SNP identification and genotype calling. To generate genotype data for GWAS, SNPs were filtered with minor allele frequency 0.05. Finally, 841,134 high-quality SNPs were used for our GWAS. The significant threshold was -log10(P) >7.23. From the results, 2 significance SNP were detected. Considering the LD block of 250kbp, 60 candidate gene were selected including Hypothetical gene and Conserved gene. In this poster, we analyzed candidate gene affecting adaxial Leaf Rolling through single-trait GWAS.

• 지질공학
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• 제15권3호
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• pp.337-348
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• 2005

포천 지역에 분포하는 쥬라기 화강암을 대상으로 미세균열 분포특성이 화강암의 역학적 성질에 미치는 영향에 대하여 연구하였다. 3종의 방향성 시편을 대상으로 일축압축시험이 실시되었으며, 각 시편은R(riftplane), G(grain plane) 및 H(hardway plane) 축에 각각 직각이다. 다양한 탄성 상수 중, 3 방향에 따른 포아송비의 변화가 검토되었다 파괴 강도 비-포아송비의 관계도에서 포아송비의 범위는 H-시편에서 가장 높은 분포양상을 보이며 G-시편, R-시편의 순으로 감소한다. 분포곡선은 $I\simIII$ 단계에서는 거의 선형이며, IV-3 단계에서는 기울기의 급격한 증가를 보인다. 관계도에서 보는바와 같이 파괴강도비 $0.92\sim0.96$에서 변곡점이 형성된다. IV-3단계는 탄성 영역의 밖에 속한다. 4단계의 파괴단계에서의 거동은 응력-체적변형율 곡선에서 분석되었다 암석의 거동을 지배하는 응력증분-체적변형율 방정식에서 특징적인 재료상수인 a, n, Q, m 및 $\varepsilon_v^{mcf}$가 결정되었다. 이들 상수중에서 미세균열의 폐합영역( I 단계)에서 고유의 미세균열의 공극률$(a, 10^{-3})$ 그리고 압축지수(n)는 각각 $a^R(3.82)>a^G(3.38)>a^H(2.32)$ 그리고 $n^R(3.69)>n^G(2.79)>n^H(1.99)4의 순서로 나타난다. 특히 IV 단계의 미세균열의 임계체적변형율($\varepsilon_v^{mcf}$)은 3번 면에 수직인 H-시편에서 가장높게 나타난다. 이러한 결과에서 포아송비 및 재료상수와 같은 역학적 성질은 2 조의 미세균열과 밀접한 관계를 보이고있다. 강도 이방성과 미세균열의 방향성과의 상관성은 암석의 파괴 연구에 주요하게 적용될 수 있다.

• 마이크로전자및패키징학회지
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• 제27권1호
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• pp.25-29
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• 2020

광화학증착법 (PMOD; photochemical metal-organic deposition)을 이용하여 photoresist 및 etching 공정없이 pattern 된 TiO_x resistive switching (RS) 소자를 제작 및 그 특성을 평가하였다. Ti(IV) 2-ethylhexanoate를 출발물질로 사용하였으며 UV 노출시간 10 min에 광화학반응이 완료됨을 FTIR 분석을 통하여 확인하였다. 200 ℃ 이하 저온공정에서 직접패턴 된 20 nm 두께의 비정질 TiO_x 박막의 균일한 두께의 패턴형성을 Atomic Force Microscopy를 통하여 확인하였다. 별도의 상형성을 위한 후 열처리 공정 없이 4 ㎛ 선폭의 전극위에 형성된 20 nm 두께의 비정질 TiO_x RS 소자는 4V 동작전압에서 on/off ratio 20의 forming-less RS 특성을 나타내었다. Electrochemical migration에 영향을 미치는 grain boundary가 없어 소자간 신뢰성 향상이 기대되며, flexible 기판 또는 저온공정이 요구되는 메모리 소자 공정에서 PMOD 공정이 응용될 수 있음을 보여준다. Selector를 이용하여 crossbar array 구조를 도입할 경우 매우 간단한 구조의 저비용 메모리 소자를 구현할 수 있을 것으로 기대 된다.

• 한국태양에너지학회:학술대회논문집
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• 한국태양에너지학회 2012년도 춘계학술발표대회 논문집
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• pp.149-152
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• 2012

$Cu(In,Ga)Se_2$ (CIGS) is one of the most promising photovoltaic materials because of large conversion efficiency which has been achieved with an optimum Ga/(In+Ga) composition in $CuIn_{1-x}Ga_xSe_2$ (X~0.3). The Ga/(In+Ga) content is important to determine band gap, solar cell performances and carrier behaviors at grain boundary (GB). Effects of Ga/(In+Ga) content on physical properties of the CIGS layers have been extensively studied. In previous research, it is reported that GB is not recombination center of CIGS thin-film solar cells. However, GB recombination and electron-hole pair behavior studies are still lacking, especially influence of with different X on CIGS thin-films. We obtained the GB surface potential, local current and I-V characteristic of different X (00.7 while X~0.3 showed higher potential than 100 mV on GBs. Higher potential on GBs appears positive band bending. It can decrease recombination loss because of carrier separation. Therefore, we suggest recombination and electron-hole behaviors at GBs depending on composition of X.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1996년도 추계학술대회 논문집
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• pp.54-58
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• 1996

In this paper, the structure, dieletric and piezoelectric properties of Pb(Fe$_{\frac{1}{2}}$/Sb$_{\frac{1}{2}}$$O_3$+ Pb(Zr$_{0.52}$ Ti$_{0.48}$ )O$_3$system ceramics were investigated and the effects of donor Nb$^{+5}$ on these properties were characterized for the application of the actuator. In xPb(Fe$_{\frac{1}{2}}$Sb$_{\frac{1}{2}}$)O$_3$+ (1-x) Pb(Zr$_{0.52}$ Ti$_{0.48}$ )O$_3$system ceramics, tetragonality decreased as x and Nb$_2$O$_{5}$ wt% were increased. In 0.05Pb(Fe$_{\frac{1}{2}}$Sb$_{\frac{1}{2}$}$)O$_3$+ 0.95 Pb(Zr$_{0.52}$ Ti$_{0.48}$ )O$_3$system, grain size was smallest but showed best dielectric and piezoelectric properties. The specimen sintered at 120$0^{\circ}C$ in 0.05pb(Fe$_{\frac{1}{2}}$Sb$_{\frac{1}{2}}$ )O$_3$+ 0.95 Pb(Zr$_{0.52}$ Ti$_{0.48}$ )O$_3$+ Nb$_2$O$_{5}$ 0.6wt% exihibited best piezoeletric properties such as $K^{p}$ =64%, d$_{33}$ =490 [$\times$10$^{-12}$ C/N] and strain was 1320[$\times$10$^{-6}$ Δ$\ell$/$\ell$]at AC 6kV/cm