• Korean Journal of Materials Research
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• v.31 no.10
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• pp.539-545
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• 2021

The effect of Sm₂O₃ doping on the microstructure and electrical properties of the ZPCCA-based varistors is comprehensively investigated. The increase of doping content of Sm₂O₃ results in better densification (from 5.70 to 5.82 g/cm³) and smaller mean grain size (from 7.8 to 4.1 ㎛). The breakdown electric field increases significantly from 2568 to 6800 V/cm as the doping content of Sm₂O₃ increases. The doping of Sm₂O₃ remarkably improves the nonlinear properties (increasing from 23.9 to 91 in the nonlinear coefficient and decreasing from 35.2 to 0.2 µA/cm² in the leakage current density). Meanwhile, the doping of Sm₂O₃ reduces the donor concentration (the range of 2.73 × 10¹⁸ to 1.18 × 10¹⁸ cm^-3) of bulk grain and increases the barrier height (the range of 1.10 to 1.49 eV) at the grain boundary. The density of the interface states decreases in the range of of 5.31 × 10¹² to 4.08 × 10¹² cm^-2 with the increase of doping content of Sm₂O₃. The dielectric constant decreases from 1594.8 to 507.5 with the increase of doping content of Sm₂O₃.

• Journal of Welding and Joining
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• v.18 no.2
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• pp.49-56
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• 2000

Recently developed Austenite stainless steel, 309L was used to overlay on 3Cr-1Mo-V-Ti-B steels, using Electroslag welding process, which wide electrodes were adopted. Transition region in welding interlayer relating to disbonding crack was investigated. Also, the effect of welding condition on the width of transition region and coarsening grains of the austenite were studied. 1) With increasing welding speed the width of martensite at transient region was increased, but the amount of delta ferrite in weld metal was reduced, being fine grained. 2) The form of martensite at the transition region was occurred by reversible transformation during cooling since the interdiffusion of Cr and Ni from weld metal and Fe and C from base metals at the transition region, causes to lowering the concentration of Cr and Ni at the transition region, leading to increasing Ms point. 3) With increasing welding speed, the grain of austenite formed at the welding interface was finer. With increasing welding current under the same welding speed, the grain size of the austenite was finer. At high current, original grain size of the austenite is coarse, but the austenite has fine grains because the austenite was transformed to martensite during cooling. 4) In the case of high welding speed, the width of martensite at the welding interface was increased, but the grain size of austenite at the welding interface was finer. This indicates that the inhibition of disbonding crack may be achieved through dispersening fine carbides in the gain boundary.

• KOREAN JOURNAL OF CROP SCIENCE
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• v.51 no.4
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• pp.318-321
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• 2006

This study was conducted in 2002 and 2003 to investigate variation on rice quality associated with cooking, and eating qualities under the three different fertilizer levels, none fertilizer level($N-P_2O_{5-}K_2O=0-0-0kg/ha$), ordinary fertilizer level($N-P_2O_{5-}K_2O=1l0-45-57kg/ha$), and heavy fertilizer level($N-P_2O_{5-}K_2O=180-90-110kg/ha$). The eight resistant near-isogenic lines(NILs) for bacterial blight in rice were examined for grain appearances, several physicochemical properties, and palatability value measured by Toyo taste meter. Significant variations in NILs(V), Years(Y), and VxY interaction were recognized in grain length and palatability value under the none fertilizer cultivation, in grain width under the heavy fertilizer cultivation, and in white belly ratio under the three different fertilizer cultivations, respectively. According to increase the fertilizer application rate, variation in grain length and grain width were not significant, but grain thickness was thinner under the ordinary and heavy fertilizer cultivations than under the none fertilizer cultivation. On the other hand, white belly ratio, protein content and Mg/K ratio increased, while amylose content and palatability value lowered. Alkali spreading value lowed under the heavy fertilizer cultivation than under the none and ordinary fertilizer cultivations. Palatability value was significantly low in the line carrying XalJ than in the other lines under the ordinary fertilizer cultivations.

• Transactions of Materials Processing
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• v.29 no.1
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• pp.5-10
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• 2020

Heat treatment conditions of 88.5% asymmetrically cold rolled oxygen free copper (OFC) sheets have been studied to obtain an equiaxed fine microstructure with a grain size of less than 10 ㎛. The commercial OFC sheets with the thickness of 10 mm were asymmetrically cold rolled by using equal speed asymmetric rolling (ESAR) processes and total rolling reduction. The thickness of the rolled sheets were 88.5% and 1.15 mm, respectively. An equiaxed fine microstructure of OFC sheets with a grain size of 6.0 ㎛ were obtained when the asymmetrically cold rolled OFC sheets were heat treated at 180℃ for 40 minutes. The tensile strength of the asymmetrically cold rolled specimen increased from 217.6 MPa to 396.1 MPa, while the elongation of the specimen asymmetrically cold rolled and heat treated increased from 29.0% to 66.9% along with an 8% increase of the tensile strength.

• Korean Journal of Materials Research
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• v.30 no.10
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• pp.502-508
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• 2020

This paper focuses on the electrical properties and stability against DC accelerated aging stress of ZnO-V₂O₅-MnO₂-Nb₂O₅-Bi₂O₃-Co₃O₄-Dy₂O₃ (ZVMNBCD) varistor ceramics sintered at 850 - 925 ℃. With the increase of sintering temperature, the average grain size increases from 4.4 to 11.8 mm, and the density of the sintered pellets decreases from 5.53 to 5.40 g/㎤ due to the volatility of V₂O₅, which has a low melting point. The breakdown field abruptly decreases from 8016 to 1,715 V/cm with the increase of the sintering temperature. The maximum non-ohmic coefficient (59) is obtained when the sample is sintered at 875 ℃. The samples sintered at below 900 ℃ exhibit a relatively low leakage current, less than 60 mA/㎠. The apparent dielectric constant increases due to the increase of the average grain size with the increase of the sintering temperature. The change tendency of dissipation factor at 1 kHz according to the sintering temperature coincides with the tendency of the leakage current. In terms of stability, the samples sintered at 900 ℃ exhibit both high non-ohmic coefficient (45) and excellent stability, 0.8% in 𝚫E_B/E_B and -0.7 % in 𝚫α/α after application of DC accelerated aging stress (0.85 E_B/85 ℃/24 h).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.49-49
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• 2008

ZnO-based varistors have been widely used for voltage stabilization or transient surge suppression in electric power systems and electronic circuits. Recently, It has reported that the varistor behavior with nonlinear coefficient of 6~17 in Mn-doped ZnO. In this study we have chosen the composition of ZnO-$TeO_2-Mn_3O_4$ (ZTM) system to the purpose of whether varistor behavior appeared in doped ZnO by the solid state sintering or not. We investigated the sintering and electric properties of 0.5~3.0 at% Mn doped ZnO-1.0 at% $TeO_2$ system. Electrical properties, such as current-voltage (I-V), capacitance-voltage (C-V), and impedance spectroscopy were conducted. $TeO_2$ itself melts at $732^{\circ}C$ in air but forms the $ZnTeO_3$ phase with ZnO as increasing temperature and therefore retards the densification of ZnO to $1000^{\circ}C$. The average grain size of sintered samples was at about $3{\mu}m$ and decreased with increasing Mn contents. It was found that a good varistor characteristics were developed in ZTM system sintered at $1100^{\circ}C$ (nonlinear coefficient $\alpha$ ~ 60). The results of C-V characteristics such as barrier height ($\Theta$), donor density ($N_d$), depletion layer (W), and interface state density ($N_t$) in ZTM ceramics were $4\times10^{17}cm^{-3}$, 0.7 V, 40 nm, and $1.6\times10^{12}cm^{-2}$, respectively. It will be discussed about the stability and homogeneity of grain boundaries using distribution parameter ($\alpha$) simulated with the Z(T)"-logf plots in ZTM system.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.154-155
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• 2012

The promise of nano-crystalites (nc) as a technological material, for applications including display backplane, and solar cells, may ultimately depend on tailoring their behavior through doping and crystallinity. Impurities can strongly modify electronic and optical properties of bulk and nc semiconductors. Highly doped dopant also effect structural properties (both grain size, crystal fraction) of nc-Si thin film. As discussed in several literatures, P atoms or radicals have the tendency to reside on the surface of nc. The P-radical segregation on the nano-grain surfaces that called self-purification may reduce the possibility of new nucleation because of the five-coordination of P. In addition, the P doping levels of ${\sim}2{\times}10^{21}\;at/cm^3$ is the solubility limitation of P in Si; the solubility of nc thin film should be smaller. Therefore, the non-activated P tends to segregate on the grain boundaries and the surface of nc. These mechanisms could prevent new nucleation on the existing grain surface. Therefore, most researches shown that highly doped nc-thin film by using conventional PECVD deposition system tended to have low crystallinity, where the formation energy of nucleation should be higher than the nc surface in the intrinsic materials. If the deposition technology that can make highly doped and simultaneously highly crystallized nc at low temperature, it can lead processes of next generation flexible devices. Recently, we are developing a novel CVD technology with a neutral particle beam (NPB) source, named as neutral beam assisted CVD (NBaCVD), which controls the energy of incident neutral particles in the range of 1~300eV in order to enhance the atomic activation and crystalline of thin films at low temperatures. During the formation of the nc-/pm-Si thin films by the NBaCVD with various process conditions, NPB energy directly controlled by the reflector bias and effectively increased crystal fraction (~80%) by uniformly distributed nc grains with 3~10 nm size. In the case of phosphorous doped Si thin films, the doping efficiency also increased as increasing the reflector bias (i.e. increasing NPB energy). At 330V of reflector bias, activation energy of the doped nc-Si thin film reduced as low as 0.001 eV. This means dopants are fully occupied as substitutional site, even though the Si thin film has nano-sized grain structure. And activated dopant concentration is recorded as high as up to 1020 #/$cm^3$ at very low process temperature (＜ $80^{\circ}C$) process without any post annealing. Theoretical solubility for the higher dopant concentration in Si thin film for order of 1020 #/$cm^3$ can be done only high temperature process or post annealing over $650^{\circ}C$. In general, as decreasing the grain size, the dopant binding energy increases as ratio of 1 of diameter of grain and the dopant hardly be activated. The highly doped nc-Si thin film by low-temperature NBaCVD process had smaller average grain size under 10 nm (measured by GIWAXS, GISAXS and TEM analysis), but achieved very higher activation of phosphorous dopant; NB energy sufficiently transports its energy to doping and crystallization even though without supplying additional thermal energy. TEM image shows that incubation layer does not formed between nc-Si film and SiO2 under later and highly crystallized nc-Si film is constructed with uniformly distributed nano-grains in polymorphous tissues. The nucleation should be start at the first layer on the SiO2 later, but it hardly growth to be cone-shaped micro-size grains. The nc-grain evenly embedded pm-Si thin film can be formatted by competition of the nucleation and the crystal growing, which depend on the NPB energies. In the evaluation of the light soaking degradation of photoconductivity, while conventional intrinsic and n-type doped a-Si thin films appeared typical degradation of photoconductivity, all of the nc-Si thin films processed by the NBaCVD show only a few % of degradation of it. From FTIR and RAMAN spectra, the energetic hydrogen NB atoms passivate nano-grain boundaries during the NBaCVD process because of the high diffusivity and chemical potential of hydrogen atoms.

• Transactions of the Korean Society of Mechanical Engineers
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• v.18 no.11
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• pp.2860-2870
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• 1994

When crack are detected in aged turbine rotors of power plants, information on fracture resistance of the aged material at operating temperature is needed for determination of critical loading condition and residual life of the turbine. In this study, fracture toughness (J$_lc$) and tearing modulus(T$_mat$) of virgin and thermally degraded 1Cr-1Mo-0.25V steel, which is one of the most widely used rotor steels, were measured at 538.deg. C according to ASTM E813 and ASTM E1152, respectively. Five kinds of specimen with different degradation levels were prepared by isothermal aging heat treatment at $630^{\circ}C.$ It was observed that J$_lc$ and T$_mat$ value decreased as the degradation level increased. Analysis of microstructures using a scanning electron microscope showed that the decrement of J$_lc$ is related to segregation of impurities at grain boundaries. It was also verified that the DC electric potential drop method is accurate and reliable for crack length monitoring at elevated temperature.

• KOREAN JOURNAL OF CROP SCIENCE
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• v.7 no.1
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• pp.71-78
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• 1969

To study the varietal differences of vegetative organs, yield and yield components along the periodical changes of rice variety in korea, this experiment was conducted in 1968. Eighteen used varieties were grouped into 6 varietal groups by the cultivated period as follow.: 1) Group I - Korean local varieties cultivated about 1907, 2) Group II - introduced varieties cultivated in 1907 - 1930, 3) Group III - introduced varieties cultivated in 1930-1960, 4) Group IV - improved varieties cultivated in 1930-1960, 5) Group V - introduced varieties cultivated after 1960 and 6) Group VI - improved varieties cultivated after 1960. 1. Varietal Group I showed the longest leaves, the largest leaf area, the lowest value of leaf area index and the highest value of flag leaf angle. Along the periodical changes of rice varieties the leaf length, the total leaf area and the flag leaf angle were decreased, and the leaf area index was increased. 2. Varietal Group I showed higher value of the length and the weight of leaf sheath than those of Group II, III, IV, V and VI. The length of every internode was longer in Group I than in the other varietal groups. The weight of every internode was shown higher value in Group 1. The length and the weight of every internode were decreased along the periodical changes of rice variety. 3. Varietal Group I and Group III showed the higher value of culm length, panicle length and the number of grain per panicle length and groups. Group IV, V and VI had the higher value of the number of panicle, the maturing rate and the 1, 000 grains weight. Varietal Group V and VI which are cultivated in recent years showed shorter culm and panicle length, higher value of the maturing rate and the 1, 000 grains weight, and intermediate in the number of panicle and the number of grain per panicle. 4. The lowest value of straw weight was found in Group I. The highest value of grain yield was shown in Group VI, intermediate in Group II, III, IV and V and lowest in Group I. Grain-straw ratio was shown highest in Group VI.

• Proceedings of the KIEE Conference
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• 1997.07d
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• pp.1361-1363
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• 1997

Zinc oxide-based MOV was fabricated with $SiO_2$ additive ranging from 0.5 to 4.0 mol%, and the microstructure and electrical characteristics were investigated. $Zn_2SiO_4$ phase formed by $SiO_2$ additive was distributed at ZnO grains, grain boundaries, and multiple grain junctions. As the content of $SiO_2$ additive increases, average grain size decreased from 40.6 to $26.9{\mu}m$ due to the Pinning effect by $Zn_2SiO_4$ at grain boundaries Breakdown voltage and nonlinear exponent increased, and leakage current decreased in the range of $11.2{\sim}6.14{\mu}A$ with an increasing $SiO_2$. Donor concentration and interface state density decreased, and barrier height increased in the range of $0.71{\sim}1.04eV$ with an increasing $SiO_2$. While, as the content of $SiO_2$ additive, apparent dielectric constant decreased, peak frequency of dissipation factor decreased in the range of $6.45{\times}10^5{\sim}3.00{\times}10^5Hz$, and dissipation peak was $0.31{\sim}0.22$ at Peak frequency.