• Title/Summary/Keyword: Grain orientation

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The current status in the silicon crystal growth technology for solar cells (태양전지용 규소 결정 성장 기술 개발의 현황)

  • Lee, A-Young;Lee, Dong-Gue;Kim, Young-Kwan
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.24 no.2
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    • pp.47-53
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    • 2014
  • Three kinds of crystalline silicon have been used for the solar cell grade. First of all, single crystalline silicon is the main subject to enhance the production yield. Most of the efforts are focused on the control of the melt-crystal interface shape affected by the crystal-crucible rotation rate. The main subject in the multi-crystalline silicon ingot is the contamination control. Faster Ar gas flow above the melt surface will lower the carbon contamination in the crystal. And also, twin boundary electrically inactive is found to be more effective than grain boundary for the improvement of the MCLT. In the case of mono-like silicon material, propagation of the multi-crystalline silicon growing from the inner side crucible is the problem lowering the portion of the single crystalline part at the center of the ingot. Crystal growing apparatus giving higher cooling rate at the bottom and lower cooling rate at the side crucible was suggested as the optimum solution obtaining higher quality of the mono-like silicon ingot. Proper application of the seeds at the bottom of the crucible would be one of the solutions.

Synthesis of YSZ Thin Films by PECVD (PECVD에 의한 YSZ(Yttria Stabilized Zirconia)박막 제조)

  • Kim, Gi-Dong;Sin, Dong-Geun;Jo, Yeong-A;Jeon, Jin-Seok;Choe, Dong-Su;Park, Jong-Jin
    • Korean Journal of Materials Research
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    • v.9 no.3
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    • pp.234-239
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    • 1999
  • A Abstract Yttria-stabilized zirconia(YSZ) thin films were synthesized by plasma enhanced chemical vapor deposition process. $Zr[TMHD]_4$ $Y[TMHD]_3$ precursors and oxygen were used with the deposition temperature of $425^{\circ}C$ and rf power ranging 0-100 watt. Effects of the deposition parameters were studied by X-ray diffraction and thickness anal­ysis. YSZ thin films have cubic crystal structure with (200) orientation. From the results of EDX analysis, the converte ed content of TEX>$Y_2O_3$ was determined to be 0-36%, and the film thickness was increased with bubbling temperature which is considered to be due to increasing TEX>$Y_2O_3$ flux. The depth profiles of Zr, Y and 0 appeared relatively $\infty$nstant through film thickness. Columnar grains of $1000~2000\AA$ grew vertical to the substrate surface for the case of Ar carri­er gas. In case of He carrier gas, the grain size was observed to be about $1000~2000\AA$. X-ray diffraction data showed the increase of lattice constant with TEX>$Y_2O_3$ content. It was that the presence of the cracks formed during film deposition, partially released the stress generated by the increase of lattice constant.

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Microstructure Related to the Growth of Rare-earth Mineral in the Eoraesan Area, Chungju, Korea (충주 어래산 지역에서 희토류 광물의 성장과 관련된 미구조)

  • Kang, Ji-Hoon
    • The Journal of the Petrological Society of Korea
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    • v.28 no.2
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    • pp.129-141
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    • 2019
  • The Eoraesan area, Chungju, which is located in the northwestern part of Ogcheon Metamorphic Zone, Korea, mainly consists of the Neoproterozoic Gyemyeongsan Formation and the Mesozoic igneous rocks which intruded it. The metaacidic rocks (MAR) of the Gyemyeongsan Formation show a maximum radioactive value, and the Early Jurassic biotite granite is regionally distributed in this area. In this paper is researched the microstructure related to the growth of rare-earth mineral of allanite in the MAR, and is considered the source and occurrence time of rare-earth element (REE) mineralization. The MAR is mainly composed of alkalic feldspar (mainly microcline), quartz, iron-oxidizing mineral, biotite, muscovite, plagioclase, hornblende, allanite, zircon, epidote, fluorite, apatite, garnet, (clino)zoisite etc. The radioactive elements contained in the allanite cause a dark brown hale in the surrounding biotite, and the allinte also occurs as aggregate along the regional foliation. The deflection of regional foliation and the strain shadows, which are common to the pre-tectonic porphyroblast grown before the formation of regional foliation, can't be observed around most allanites (aggregates). The grain size and orientation of ironoxidizing mineral included in the allanite aggregate are the same as those in the matrix. It is recognized the hydrothermal conversion of hornblende to biotite due to the intrusion of igneous rock, and the secondary biotite occurs and contacts with allanite, zircon, epidote etc. These microstructures indicate that the rare-earth mineral of allanite (aggregate) grew by the hydrothermal alteration due to the intrusion of igneous rock after the formation of regional foliation. It is considered that the REE mineralization is closely related to the intrusion of Early Jurassic biotite granite which is regionally distributed in this area.

Reflectance and Microhardness Characteristics of Sulfide Minerals from the Sambong Copper Mine (삼봉동광산산(三峰銅鑛山産) 유화광물(硫化鑛物)의 반사도(反射度)와 미경도(微硬度) 특성(特性))

  • Chi, Se Jung
    • Economic and Environmental Geology
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    • v.17 no.2
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    • pp.115-139
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    • 1984
  • The Cu-Pb-Zn-Ag hydrothermal vein-type deposits which comprise the Sambong mine occur within calc-alkaline volcanics of the Cretaceous Gyeongsang Basin. The ore mineralization took place through three distinct stages of quartz (I and II stages) and calcite veins (III stage) which fill the pre-existing fault breccia zones. These stages were separated in time by tectonic fracturing and brecciation events. The reflection variations of one mineral depending on mineralization sequence are considered to be resulted from variation in its chemical composition due to different physico-chemical conditions in the hydrothermal system. The reflection power of sphalerite increases with the content of Fe substituted for Zn. Reflectances of the sphalerite grain are lower on (111) than on (100) surface. The spectral profiles depend on the internal reflection color. Sphalerite, showing green, yellow and reddish brown internal reflection, have the highest reflection power at $544m{\mu}$ (green), $593m{\mu}$ (yellow) and $615m{\mu}$ (red) wavelength, respectively. Chalcopyrite is recognized as biaxial negative from the reflectivity data of randomly oriented grains measured at the most sensitivity at $544m{\mu}$. The microindentation hardness against the Fe content (wt. %) for the sphalerite increases to 8.05% Fe and then decreases toward 9.5% Fe content. Vickers hardness of the sphalerite is considerably higher on surface of (100) than on (111). The relationship between Vickers hardness and crystal orientation of the galena was determined to be $VHN_{(111)}$ > $VHN_{(210)}$ > $VHN_{(100)}$. The softer sulfides have the wider variation of the diagonal length in the indentation. Diagonal length in the indentation is pyrite

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Mechanical Anisotropy of Pocheon Granite under Uniaxial Compression (일축압축하에서 포천화강암의 역학적 이방성)

  • Park Deok-Won
    • The Journal of Engineering Geology
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    • v.15 no.3
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    • pp.337-348
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    • 2005
  • Jurassic granite from Pocheon area were tested to investigate the effect of microcracks on mechanical properties of the granite. Three oriented core specimens were used for uniaxial compressive tests and each core specimen are perpendicular to the axes'R'(rift plane),'c'(grain plane) and'H'(hardway plane), respectively Among vacious elastic constants, the variation of Poisson's ratio as function of the directions was examined. From the related chart between ratio of failure strength and Poisson's ratio, H-specimen shows the highest range in Poisson's ratio and Poisson's ratio decreases in the order of C-specimen and R-specimen. The curve pattern is nearly linear in stage $I\simIII$ but the slope increases abruptly in stage H-3. As shown in the related chart, diverging point of a curve is formed when ratio of failure strength is $0.92\sim0.96$ Stage IV -3 is out of elastic region. The behaviour of rock in the four fracturing stages was analyzed in term of the stress-volumetric strain me. From the stress increment-volumetric strain equations governing the behaviour of rock, characteristic material constants, a, n, Q, m and $\varepsilon_v^{mcf}$, were determined. Among these, inherent microcrack porosity$(a, 10^{-3})$ and compaction exponent(n) in the microcrack closure region(stage I ) show an order of $a^R(3.82)>a^G(3.38)>a^H(2.32)\;and\;n^R(3.69)>n^G(2.79)>n^H(1.99)4, respectively. Especially, critical volumetric microcrack strain($\varepsilon_v^{mcf}$) in the stage W is highest in the H-specimen, normal to the hardway plane. These results indicate a strong correlation between two major sets of microcracks and mechanical properties such as Poisson's ratio and material constants. Correlation of strength anisotropy with microcrack orientation can have important application in rock fracture studies.

Fabrication and Characterization of $CuInSe_2$Thin Films from $In_2Se_3$ and$Cu_2Se$Precursors ($In_2Se_3$$Cu_2Se$를 이용한 $CuInSe_2$박막제조 및 특성분석)

  • Heo, Gyeong-Jae;Gwon, Se-Han;Song, Jin-Su;An, Byeong-Tae
    • Korean Journal of Materials Research
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    • v.5 no.8
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    • pp.988-996
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    • 1995
  • CuInSe$_2$this films as a light absorber layer were fabricated by vacuum evaporation using In$_2$Se$_3$and Cu$_2$Se precursors and their properties were analyzed. Indium selenide films of 0.5${\mu}{\textrm}{m}$ thickness were first deposited by vacuum evaporation of In$_2$Se$_3$ on a Corning 7059 glass substrate. The films deposited at suscepor temperature of 40$0^{\circ}C$ showed a flat surface morphology with densely Packed grain structure. CuInSe$_2$films directly formed by evaporating Cu$_2$Se on the predeposited In$_2$Se$_2$films also showed a very flat surface when the susceptor temperature was $700^{\circ}C$. Cu$_2$Se, a second phase in the CuInSe$_2$film, was removed by evaporating additional In$_2$Se$_3$on the CuInSe$_2$film at $700^{\circ}C$. The grain size of 1.2${\mu}{\textrm}{m}$ thick CuInSe$_2$, film was about 2${\mu}{\textrm}{m}$ and the film had a (112) preferred orientation. As the amount of deposited In$_2$Se$_3$increased, the electrical resistivity of CuInSe$_2$films increased because of the decrease of hole concentration. But the optical band gap was almost constant at the value of 1.04eV, The CuInSe$_2$film grown on a Mo/glass substrate had a similar smooth microstructure compared to that on a glass substrate. A solar cell with ZnO/CdS/CuInSe$_2$/Mo structure may be realized based on the above CuInSe$_2$films.

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Characteristics and Distribution Pattern of Carbonate Rock Resources in Kangwon Area: The Gabsan Formation around the Mt. Gachang Area, Chungbuk, Korea (강원 지역에 분포하는 석회석 자원의 특성과 부존환경: 충북 가창산 지역의 갑산층을 중심으로)

  • Park, Soo-In;Lee, Hee-Kwon;Lee, Sang-Hun
    • Journal of the Korean earth science society
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    • v.21 no.4
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    • pp.437-448
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    • 2000
  • The Middle Carboniferous Gabsan Formation is distributed in the Cheongrim area of southern Yeongwol and the Mt. Gachang area of Chungbuk Province. This study was carried out to investigate the lithological characters and geochemical composition of the limestones and to find out controlling structures of the limestones of the formation. The limestones of the Gabsan Formation are characterized by the light gray to light brown in color and fine and dense textures. The limestone grains are composed of crinoid fragments, small foraminfers, fusulinids, gastropods, ostracods, etc. Due to the recrystallization, some limestones consist of fine crystalline calcites. The chemical analysis of limestones of the formation was conducted to find out the contents of CaO, MgO, Al$_2$O$_3$, Fe$_2$O$_3$ and SiO$_2$. The content of CaO ranges from 49.78-60.63% and the content of MgO ranges from 0.74 to 4.63% The contents of Al$_2$O$_3$ and Fe$_2$O$_3$ are 0.02-0.55% and 0.02${\sim}$0.84% , respectively. The content of SiO$_2$ varies from 1.55 to 4.80%, but some samples contain more than 6.0%. The limestones of the formation can be grouped into two according to the CaO content: One is a group of which CaO content ranges from 49.78 to 56.26% and the other is a group of which CaO content varies from 59.36 to 60.38%. In the first group, the contents of Al$_2$O$_3$, Fe$_2$O$_3$ and SiO$_2$ range very irregularly according to the CaO content. In the second group, the values of MgO, Al$_2$O$_3$, Fe$_2$O$_3$ and SiO$_2$ are nearly same. Detailed structural analysis of mesoscopic structures and microstructures indicates the five phase of deformation in the study area. The first phase of deformation(D$_1$) is characterized by regional scale isoclinal folds, and bedding parallel S$_1$ axial plane foliation which is locally developed in the mudstone and sandstone. Based on the observations of microstructures, S$_1$ foliations appear to be developed by grain preferred orientation accompanying pressure-solution. During second phase of deformation, outcrop scale E-W trending folds with associated foliations and lineations are developed. Microstructural observations indicate that crenulation foliations were formed by pressure-solution, grain boundary sliding and grain rotation. NNW and SSE trending outcrop scale folds, axial plane foliations, crenulation foliations, crenulation lineations, intersection lineations are developed during the third phase of deformation. On the microscale F$_3$ fold, axial plane foliations which are formed by pressure solution are well developed. Fourth phase of deformation is characterized by map scale NNW trending folds. The pre-existing planar and linear structures are reoriented by F$_4$ folds. Fifth phase of deformation developed joints and faults. The distribution pattern of the limestones is mostly controlled by F$_1$ and F$_4$ folds.

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Physical Properties of Cd2GeSe4 and Cd2GeSe4:Co2+ Thin Films Grown by Thermal Evaporation (진공증착법에 의해 제작된 Cd2GeSe4와 Cd2GeSe4:Co2+ 박막의 물리적 특성)

  • Lee, Jeoung-Ju;Sung, Byeong-Hoon;Lee, Jong-Duk;Park, Chang-Young;Kim, Kun-Ho
    • Journal of the Korean Vacuum Society
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    • v.18 no.6
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    • pp.459-467
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    • 2009
  • $Cd_2GeSe_4$ and $Cd_2GeSe_4:Co^{2+}$ films were prepared on indium-tin-oxide(ITO)-coated glass substrates by using thermal evaporation. The crystallization was achieved by annealing the as-deposited films in flowing nitrogen. X-ray diffraction spectra showed that the $Cd_2GeSe_4$ and the $Cd_2GeSe_4:Co^{2+}$ films were preferentially grown along the (113) orientation. The crystal structure was rhomohedral(hexagonal) with lattice constants of $a=7.405\;{\AA}$ and $c=36.240\;{\AA}$ for $Cd_2GeSe_4$ and $a=7.43\;{\AA}$ and $c=36.81\;{\AA}$ for $Cd_2GeSe_4:Co^{2+}$ films. From the scanning electron microscope images, the $Cd_2GeSe_4$ and $Cd_2GeSe_4:Co^{2+}$ films were plated, and the grain size increased with increasing annealing temperature. The optical energy band gap, measured at room temperature, of the as-deposited $Cd_2GeSe_4$ films was 1.70 eV and increased to about 1.74 eV and of the as-deposited $Cd_2GeSe_4:Co^{2+}$ films was 1.79 eV and decreased to about 1.74 eV upon annealing in flowing nitrogen at temperatures from $200^{\circ}C$ to $500^{\circ}C$. The dynamical behavior of the charge carriers in the $Cd_2GeSe_4$ and $Cd_2GeSe_4:Co^{2+}$ films were investigated by using the photoinduced discharge characteristics technique.

Effect of sputtering conditions on the exchange bias and giant magnetoresistance in Si/Ta/NiFe/CoFe/Cu/CoFe/FeMn/Ta spin valves (스파터링 조건이 FeMn계 top 스핀 밸브의 exchange bias 및 자기적 특성에 미치는 영향)

  • Kim, K.Y.;Shin, K.S.;Han, S.H.;Lim, S.H.;Kim, H.J.;Jang, S.H.;Kang, T.
    • Journal of the Korean Magnetics Society
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    • v.10 no.2
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    • pp.67-73
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    • 2000
  • Top spin valve samples with a structure Ta/NiFe/CoFe/Cu/CoFe/FeMn/Ta were deposited on a Si(100) substrate by changing d.c. magnetron sputtering conditions and the exchange-bias and magnetic properties of samples were investigated. The Exchange field, H$\_$ex/ increased with increase of sputtering power of FeMn from 30 to 150 W and CoFe from 30 to 100 W deposited on the Cu, the increase of H$\_$ex/ was found due to the improvement of preferred orientation of (111) FeMn phase from XRD results. In the case of Cu, H$\_$ex/ decreased with the increase of sputtering pressure ranging from 1 to 5 mTorr. The relationship between exchange field and resistance was investigated, spin valve samples with a large exchange field showed the lower resistance, which was strongly dependent on the good crystallinity and grain size increase as well as lower scattering effects. The Cu thickness was changed from 22 to 38 $\AA$ for Si/Ta/NiFe/CoFe/Cu(t), 30 W/CoFe, 100 W/FeMn, 100 W/Ta spin valve structures, MR ratio of 6.5 % and exchange field of about 190 Oe were obtained for the sample with Cu of 22 $\AA$ thickness. The increase of exchange field with decrease of Cu thickness was explained by FM/AFM spin-spin interaction.

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