• Title/Summary/Keyword: Grain orientation

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Superhard Mo-Al-N films Composed of Grains with Different Crystallographic Orientations and/or Lattice Structures

  • Musil, J.;Stadnik, T.;Cernansky, M.
    • Journal of the Korean institute of surface engineering
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    • v.36 no.1
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    • pp.22-26
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    • 2003
  • This short communication reports on the experiment which demonstrates that superhard nanostructured films with hardness of about 40 GPa and greater can be composed not only of two or more nanocrystalline and/or amorphous phases of different materials, as it is in the case of nanocomposite coatings, but also that can be formed by a mixture of small (<10 nm) nanocrystalline grains of the same material with different crystallographic orientation and/or lattice structures. This finding opens new possibilities to develop advanced nanostructured materials with enhanced physical and functional properties.

Structural study of indium oxide thin films by metal organic chemical vapor deposition (저온화학기상증착에 의한 인듐산화막 구조에 관한 연구)

  • Pammi, S.Venkat.N.;Seong, Nak-Jin;Yoon, Soon-Gil
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2007.06a
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    • pp.47-47
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    • 2007
  • Indium oxide conducting films were dep9sited on Si(100) substrates at various temperatures by liquid delivery metal organic chemical vapor deposition using Indium (III) tris (2,2,6,6-tetramethyl-3.5-heptanedionato) $(dpm)_3$ precursors. The films deposited at $200{\sim}400^{\circ}C$ were grown with a (111) preferred orientation and exhibit an increase of grain size from 21 to 33nm with increasing deposition temperature. In the range of deposition temperature, there is no metallic indium phase in deposited films.

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Stoichiometry dependency of the firing and sustain voltage properties of MgO thin films for AC plasma display panels (교류형 플라즈마 디스플레이용 MgO 박막의 조성변화에 따른 방전전압특성의 영향)

  • 손충용;조진희;김락환;김정열;박종완
    • Journal of the Korean Vacuum Society
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    • v.9 no.1
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    • pp.24-29
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    • 2000
  • MgO thin films were deposited on soda lime glass substrates by rf magnetron sputtering using a MgO target at various oxygen flow ratios in order to probe the relationship between MgO film properties and discharge characteristics. MgO films have a tendency to form microstructures with a preferred growth orientation of (200) with increasing oxygen flo ration up to 0.1 $O_2$/(Ar+$O_2$). MgO film obtained at 0.1[$O_2$/(Ar+$O_2$)] was found to be fully stoichiometric. The stoichiometric MgO film was observed to have relatively very clean surface and grains of large size and contain almost no hydroxyl group. The AC PDP with fully stoichiometric MgO film showed lower firing and sustain voltages than those with magnesium-rich or oxygen-rich MgO films, being largely attributed to the larger grain size and the minimized hydroxyl group.

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The effect of pulse current electrolysis on the composition and themicrostructure of Tin-Zinc electrodeposits (주석-아연 합금도금층의 조성 및 조직에 미치는 파형전류전해의 영향)

  • 예길촌;박성진;김대영
    • Journal of the Korean institute of surface engineering
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    • v.34 no.4
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    • pp.303-312
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    • 2001
  • Composition and microstructure of the tin-zinc alloys electroplated in gluconate bath were studied according to pulse current parameters. The cathode current efficiency increased with both the mean current density and the off-time decrease. Zinc content of the alloy deposits increased with increasing mean current density, while it decreased noticebly with increasing the off-time from 10-30ms to 100-150ms. The preferred orientation of the alloy deposits changed with the increase of peak current density in the sequence of (220)longrightarrow(220)+(420) or (220)+(420)+(321) mixed structure. The equiaxed grain size of the alloy increased with the increase of off-time and the decrease of mean current density.

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Texture Characteristics of TiN Film by Electron Backscatter Diffraction

  • Jeong, Bong-Yong
    • Korean Journal of Metals and Materials
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    • v.50 no.12
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    • pp.867-871
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    • 2012
  • The microstructure and texture of TiN coatings on a Ni-based super-alloy were characterized by the automated version of electron backscatter diffraction (EBSD), EBSD techniques were used to investigate the very fine TiN grain shape and crystal orientation. This study confirmed that EBSD techniques provide a very useful tool for characterization of coating materials. The TiN grains had a special texture, a {001}-fiber texture in the coating layer. It was also found that, in severe environments, the coating performance of equiaxial and randomly oriented TiN is superior to that with columnar structures.

Growth Behavior and Thermal Stability of CoSi2 Layer on Poly-Si Substrate Using Reactive Chemical Vapor Deposition (반응성 CVD를 이용한 다결정 실리콘 기판에서의 CoSi2 layer의 성장거동과 열적 안정성에 관한 연구)

  • Kim, Sun-Il;Lee, Heui-Seung;Park, Jong-Ho;Ahn, Byung-Tae
    • Korean Journal of Materials Research
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    • v.13 no.1
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    • pp.1-5
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    • 2003
  • Uniform polycrystalline $CoSi_2$layers have been grown in situ on a polycrystalline Si substrate at temperature near $625^{\circ}C$ by reactive chemical vapor deposition of cyclopentadienyl dicarbonyl cobalt, Co(η$^{5}$ -C$_{5}$ H$_{5}$ )(CO)$_2$. The growth behavior and thermal stability of $CoSi_2$layer grown on polycrystalline Si substrates were investigated. The plate-like CoSi$_2$was initially formed with either (111), (220) or (311) interface on polycrystalline Si substrate. As deposition time was increasing, a uniform epitaxial $CoSi_2$layer was grown from the discrete $CoSi_2$plate, where the orientation of the$ CoSi_2$layer is same as the orientation of polycrystalline Si grain. The interface between $CoSi_2$layer and polycrystalline Si substrate was always (111) coherent. The growth of the uniform $CoSi_2$layer had a parabolic relationship with the deposition time. Therefore we confirmed that the growth of $CoSi_2$layer was controlled by diffusion of cobalt. The thermal stability of $CoSi_2$layer on small grain-sized polycrystalline Si substrate has been investigated using sheet resistance measurement at temperature from $600^{\circ}C$ to $900^{\circ}C$. The $CoSi_2$layer was degraded at $900^{\circ}C$. Inserting a TiN interlayer between polycrystalline Si and $_CoSi2$layers improved the thermal stability of $CoSi_2$layer up to $900^{\circ}C$ due to the suppression of the Co diffusion.

Magnetic properties and the shapes of magnetic domain for $CoCr_{16.2}Pt_{10.8}Ta_4$ alloy films with the prior deposition of Ti layer ($CoCr_{16.2}Pt_{10.8}Ta_4$ 합금박막의 Ti 우선증착에 따른 자기적 특성과 자구형상변화)

  • 이인선;김동원
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.10 no.1
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    • pp.17-22
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    • 2000
  • A quaternary alloy film of $CoCr_{16.2}Pt_{10.8}Ta_4$was investigated for its magnetic properties and c-axis orientation with and without Ti underlayer. Additional elements such as Ta, Pt have been frequently introduced in CoCr alloy film for perpendicular recording as a means of improving magnetic performance. It has been reported that the addition of Pt and Ta in CoCr increase the coercivity and the magnetic isolation of columnar grains, respectively. However, CoCrPtTa perpendicular magnetic layer should be more increased its perpendicular magnetic anisotropy than at present for the application of ultrahigh recording density. The improvement of underlayers and substrate materials is one of the promised schemes to intensify the perpendicular magnetic anisotropy. In this study, the insertion of Ti underlayer shows the remarkable improvement of c-axis orientation compare with the direct deposition on the bare glass. The mechanism about this effect of Ti underlayer on CoCrPtTa is not to be clarified yet. Meanwhile, it is found that the magnetic domain of CoCrPtTa on 20 nm Ti underlayer has the continuous stripe pattern but the one of CoCrPtTa on 90 nm Ti underlayer shows the discrete mass type from the results of MFM investigation. This phenomenon is to be a distinct evidence that the improvement of perpendicular anisotropy by the adoption of Ti underlayer is originated from the reinforcement of the grain boundary segregation in CoCrPtTa alloy. Moreover, the transition of the M-H hysteresis pattern with the thickness of Ti underlayer indicates that the major contribution of Ti underlayer is not the magnetocrystalline anisotropy but the shape anisotropy due to the formation of uniform columnar grains by the nonmagnetic alloy segregation.

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Microcrack Orientations in Bulgugsa Granites from Southwestern Gyeongsang Basin (경상분지 남서부 일대의 불국사 화강암류에서 발달하는 미세균열의 방향성)

  • Park, Deok-Won
    • The Journal of the Petrological Society of Korea
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    • v.17 no.4
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    • pp.206-221
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    • 2008
  • We have studied general orientational characteristics of microcracks distributed in Bulgugsa Granites of southwestern Gyeongsang Basin. Microcracks of 131 sets, which were developed on horizontal surfaces of II rock samples collected from Sacheon-Gosung, Geoje-si and Namhae-gun areas, were distinguished by image processing. Then, 45 sets with a distinct linear array on image were sorted out. These microcracks can be comparable with vertical grain planes. Orientations of these microcracks were compared with those of vertical rift and grain planes developed in Cretaceous and Jurassic granites of Korea. In the distribution chart, the agreement of the distribution pattern between microcracks of 45 sets and above vertical planes suggests that microcrack systems developed all over the study area also occur regionally in Cretaceous and Jurassic granites of Korea. Whole domain of the directional angle-frequency chart can be divided into 20 domains in terms of the phases of the distribution of microcracks. Meanwhile, 18 domains from 45 sets of microcracks were compared with the maximum principal stress orientations suggested from previous studies. The majority of maximum principal stress orientations pertain to domain $1{\sim}2$, $5{\sim}6$, $11{\sim}15$, $17{\sim}18$ and $19{\sim}20$, and these domains are coincident with the orientation of the 1st and 2nd-frequency orders represented in a rose diagram for 45 sets of microcracks. Representative orientations of open microcrack reflect the maximum principal stress orientations suggested in previous studies.

Fabrication and Electrical Properties of High Tc $A_{2}B_{2}O_{7}$ Piezoelectric Ceramics Using the Powders Prepared by the Chemical Coprecipitation Method (화학적공침법에 의한 $A_{2}B_{2}O_{7}$ 고온압전세라믹스의 제작과 전기적 특성)

  • Son, Chang-Heon;Jeon, Sang-Jae;Nam, Hyo-Duk
    • Journal of Sensor Science and Technology
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    • v.6 no.4
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    • pp.316-327
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    • 1997
  • Polycrystalline $Sr_{2}Nb_{2}O_{7}$ and $La_{2}Ti_{2}O_{7}$ ceramics with very high Curie temperatures were synthesized by the chemical coprecipitation method (CCP). The powders synthesized were identified by XRD and their sintering behavior and physical properties were studied. The grain-orientation and electrical properties of sintered ceramics were investigated as a function of firing temperature. Single phase could be obtained by CCP method at temperature lower than that of the conventional method by 100 - $150^{\circ}C$. Strontium niobate, $Sr_{2}Nb_{2}O_{7}$, powder was Prepared by CCP method at temperatures as low as $800^{\circ}C$ via intermediate phase of $Sr_{5}Nb_{4}O_{15}$ formed at $700^{\circ}C$. The resulting CCP-derived powder was observed to have finer and more uniform particle size distribution than those obtained through the conventional or the molten salt synthesis method. Sintering of CCP-derived $Sr_{2}Nb_{2}O_{7}$ powder at $1500^{\circ}C$ yielded a highly dense ceramics with 97% theoretical density. Very high grain-orientation developed along the (0k0) direction was observed by SEM, which resulted in anisotropic dielectric properties of the sintered samples, with the dielectric constant values approaching those for single crystal.

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High-Strain Rate Tensile Behavior of Pure Aluminum Single and Multi-Crystalline Materials with a Tensile Split Hopkinson Bar (인장형 홉킨슨 바 장치를 이용한 알루미늄 단결정 및 멀티결정재의 동적 실험)

  • Ha, Sangyul;Jang, Jin Hee;Yoon, Hyo Jun;Kim, KiTae
    • Transactions of the Korean Society of Mechanical Engineers A
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    • v.40 no.1
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    • pp.23-31
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    • 2016
  • In this study, we modified the conventional tensile split Hopkinson bar(TSHB) apparatus typically used for the high strength steel to evaluate the tensile deformation behavior of soft metallic sheet materials under high strain rates. Stress-strain curves of high purity single and multi-crystalline materials were obtained using this experimental procedure. Grain morphology and initial crystallographic orientation were characterized by EBSD(Electron Backscattered Diffraction) method measured in a FE-SEM(Field emission-scanning electron microscopy). The fractured surfaces were observed by using optical microscopy. The relationship between plastic deformation of aluminum crystalline materials under high-strain rates and the initial microstructure and the crystallographic orientations has been addressed.