• Journal of the Korean Ceramic Society
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• v.26 no.1
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• pp.13-20
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• 1989

After sintering Si3N4 containing 20wt% of variable composition ratio of Y2O3 and Al2O3 at 1$600^{\circ}C$, the specimens were annealed at 125$0^{\circ}C$ and 135$0^{\circ}C$ for 5, 10, 15 hours in order to crystallize the remanining oxynitride glass phases. The main grain-boundary crystalline phases in the Si3N4-Y2O3-Al2O3 system were melilite and YAG. By annealing 15hrs. at 125$0^{\circ}C$, almost all of the glasses were crystallized. During the growth of melilite, lattice volyume of $\beta$-Si3N4 was increased as Al3+ and O2- ions in the oxynitride glass diffuse into $\beta$-Si3N4 lattice, but during the growth of YAG, lattice volume of $\beta$-Si3N4 was decreased by reverse diffusion of Al3+ and O2- ions. In case of crystallization of glass phase to melilite, thermal expansion of sample was decreased, but in case of crystallization to YAG, inverse phenomen on was observed.

• Transactions of the Korean hydrogen and new energy society
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• v.22 no.4
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• pp.458-464
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• 2011

Recently, one of the hydrogen production methods has attracted using dense metallic membrane. It has high hydrogen permeation and selectivity which hardly could adopt industrial product because of high cost, hydrogen embrittlment and thermal stability. Meanwhile, vanadium has high hydrogen solubility and it use to instead of Pd-Ag amorphous membrane. Aluminum carried out blocking hydrogen diffusion on grain boundary therefore protecting hydrogen embrittlement. Most of dense metallic membrane is solution diffusion mechanism. The solution diffusion mechanism was very similar hydrogen storing steps such as steps of metal hydride. Thus, V-Al composites were fabricated to use hydrogen induced mechanical alloying. The fabricated V-Al composites were characterized by XRD, SEM, EDS and simultaneous TG/DSC analyses. The hydrogenation behaviors were evaluated using a Sievert's type automatic PCT apparatus. The hydrogenation behaviors of V-Al composites was evaluated too low hydrogen stored capacity and fast hydrogenation kinetics. In PCI results, V-Al composites had low hydrogen solubility, in spite of that, hydrogen kinetics was calculated very fast and hydrogen absorption/desorption contents were same capacity.

• Journal of the Korean Society for Heat Treatment
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• v.6 no.1
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• pp.9-16
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• 1993

To investigate the properties of diffusion bonding of 7050 Al alloy, the diffusion bonding joints have been produced in self-made diffusion bonding hot-press which admits a defined application of the bonding pressure during the heating phase and also rapid cooling after the bonding process with various bonding condition. The strength of the bond increases with increasing the bonding time and temperature. Shear test at toom temperature showed that high strength up to 70% that of parent metal (320 MPa), 220 MPa for the specimen bonded 14 hr at $560^{\circ}C$, with 3 MPa. In this case, however, there is large deformation more than 20% reduction in thickness. The results were correlated with joint characteristics found by optical microstructure and by fractography by SEM. When the strengths of the bonds are more than 50% that of parent metal, a great deal of dimples stretched along the direction of shear stress are observed over the fractured surface of the bond. On the microstructure of the bond line, initial mophology of the bond line disapeared for the grain boundary migration with increasing the bonding time.

• Journal of the Korean Ceramic Society
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• v.28 no.6
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• pp.451-456
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• 1991

Electrical properties of 0.15 mol% Y2O3 doped semiconducting BaTiO3 ceramics have been investigated as functions of Pb5Ge3O11 contents (from 0.25 mol% to 2.5 mol%) and sintering temperatures (from 1150$^{\circ}C$ to 1300$^{\circ}C$). The low-temperature sintered BaTiO3 ceramics above 1150$^{\circ}C$ show increase of Curie temperature due to the diffusion of Pb+2 ions, and their PTCR effects decrease. As the sintering temperature increases the room temperature resistance decreases due to the growth of the grain, but the room temperature resistance increases with the increase of the Pb5Ge3O11 contents by the formation of thick insulating layers at the grain boundary.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07b
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• pp.785-787
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• 2002

Conductivity and transmittancy of ZnO is very excellent and the price is low. So the study of transparent electrode materials and electromagnetic wave shielding wall is actively in progress. We add $Al_2O_3$(0.0, 2.0, 3.0, 5.0wt%) to ZnO and observe microscopic structure and conductivity. For XRD observation, Al peak of AZO is increased by increasing the amount of $Al_2O_3$. We observe that the size of grain is reduced by increasing the liquid phase of grain boundary to SEM observation. Conductivity of AZO is increased by increasing the amount of $Al_2O_3$. We confirm the application possibility of the materials for electromagnetic wave reflection materials.

• Journal of Welding and Joining
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• v.31 no.3
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• pp.17-21
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• 2013

Sn whiskers are one of the serious causes of the failure of electronics. Sn whiskers grow spontaneously from Sn-based, lead-free finished surfaces, even at room temperature. A primary factor of these Sn whiskers growth is compressive stress, which enhances the diffusion of Sn or other elements. The sources of compressive stress are the growth of non-uniform large intermetallic compounds along the interface between the Sn grain boundary and Cu substrate. Recent studies revealed the methods for reducing Sn whisker growth. This paper gives an overview about recent researches for mitigation methods of Sn whisker growth during nearly room temperature storage.

• Korean Journal of Materials Research
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• v.6 no.6
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• pp.626-631
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• 1996

Reactive dc magnetron sputtering 법을 이용하여 증착한 molybdenum mitride 박막의 Cu 확산 방지막 특성을 조사하였다. Cu 확산 방지막으로서 molybdenum nitride 박막의 열적안정성을 관찰하기 위하여 molybdenum nitride 박막 위에 Cu를 evaporation 법으로 증착하고 진공 열처리하였다. Cu/r-Mo2N/si 구조는 $600^{\circ}C$, 30분간 열처리 시까지 안정하였다. 확산 방지막의 파괴는 $650^{\circ}C$, 30분간 열처리 시부터 격자 확산(lattice diffusion)이나 입계(grain boundary)과 결함(defect)을 통한 확산에 의해 나타나기 시작하였고, 이 때 molybdenum silicide과 copper silicide의 형성에 기인된 것으로 생각되었다. 열처리 이후 Cu/r-Mo2N/Si 사이의 상호반응이 증가하였다. 이는 Rutherford backscattering spectrometry, Auger electron spectroscopy 그리고 Nomarski microscopy 등의 분석을 통해 조사되었다.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.252.1-252.1
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• 2013

Hexagonal boron nitride (h-BN) is a two dimensional material which has high band-gap, flatness and inert properties. This properties are used various applications such as dielectric for electronic device, protective coating and ultra violet emitter so on. 1) In this report, we were growing h-BN sheet directly on sapphire 2"wafer. Ammonia borane (H3BNH3) and nickel were deposited on sapphire wafer by evaporate method. We used nickel film as a sub catalyst to make h-BN sheet growth. 2) During annealing process, ammonia borane moved to sapphire surface through the nickel grain boundary. 3) Synthesized h-BN sheet was confirmed by raman spectroscopy (FWHM: ~30cm-1) and layered structure was defined by cross TEM (~10 layer). Also we controlled number of layer by using of different nickel and ammonia borane thickness. This nickel film supported h-BN growth method may propose fully and directly growing on sapphire. And using deposited ammonia borane and nickel films is scalable and controllable the thickness for h-BN layer number controlling.

• Korean Journal of Metals and Materials
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• v.50 no.6
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• pp.433-438
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• 2012

Strength change in ultra low carbon steel carburized at $880^{\circ}C$ and $930^{\circ}C$ for 10, 30, 60 and 120 minutes was investigated. The results were analyzed by a tensile test, chemical composition analysis, optical microscopy and scanning electron microscopy. Stress in the 0.5% strain specimen in the tensile test increased as the time treated at $880^{\circ}C$ and $930^{\circ}C$ increased, because the carbon diffusion layer and the martensite of the specimen increased with increasing treatment time. Martensite was found in the ferrite region in the specimen treated at $880^{\circ}C$, which is attributed to grain boundary diffusion.

• Journal of Korea Foundry Society
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• v.7 no.3
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• pp.184-191
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• 1987

In this study the principles of melting phenomena of compacted vermicular graphite cast iron are discussed by considering the effects of the variation of phosphorus content and heating rate on the quenched microstructure of the specimens. In compacted vermicular graphite cast iron containing little phosphorus, the melting phenomena are found initially at the outer region of austenite shell and subsequently progressed with the diffusion of carbon through the austenite shell without regard to heating rate. But as the phosphorus content was increased over than 0.12wt.%, the melting phenomena initiated at the boundary of eutectic shell and progressed along the contact area between the melt and graphite tips at higher heating rate. At lower heating rate, the melt of steadite dissolved at the lower temperature than that of eutectic was moved toward the graphite through the austenite grain-boundary and promoted melting of graphite and matrix.