• Title/Summary/Keyword: Grain Structure

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Effect of Tm2O3 addition on dielectric property of barium titanate ceramics for MLCCs (Tm2O3 첨가가 MLCC용 $BaTiO3 유전특성에 미치는 영향)

  • Kim, Jin-Seong;Lee, Hee-Soo;Kang, Do-Won;Kim, Jeong-Wook
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.20 no.1
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    • pp.25-29
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    • 2010
  • Thulium oxide-doped barium titanate ceramics for MLCCs with perovskite structure were prepared by a sintering process at $1320^{\circ}C$ for 2 h in a reduced atmosphere. The effect of $Tm_2O_3$ addition on dielectric property of barium titanate ceramics has been studied in terms of their microstructures. Moreover, the phase identification of the dielectric specimens was conducted to define the secondary phase (pyrochlore). The specimen doped with 1 mol% $Tm_2O_3$ exhibited the highest dielectric constant. However, the dielectric constants of specimens with more than 2 mol% $Tm_2O_3$ to $BaTiO_3$ were the lower values than that of 1 mol% doped one. The grain size and the formation of pyrochlore phase associated with the dielectric properties were examined through morphology development and the structural analysis. Furthermore, these data were compared with the property of the dielectric material doped with $Er_2O_3$. It could be concluded that the dielectric property of ceramic capacitors were attributed to the change of pyrochlore phase and the tetragonality of $BaTiO_3$ with doping.

Effects of Al Doping on Sinterabllity and Microstructure in $UO_2-6wt%Gd_2O_3$ Pellets ($UO_2-6wt%Gd_2O_3$ 소결체에서 Al 첨가가 소결성 및 미세조직에 미치는 영향)

  • Baek, Jong-Hyeok;Yu, Ho-Sik;Yun, Gyeong-Ho;Kim, Hyeong-Su;Seo, Geum-Seok
    • Korean Journal of Materials Research
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    • v.5 no.6
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    • pp.644-649
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    • 1995
  • The sinterability and the microstructure of Al doped UO$_2$-6wt%Gd$_2$O$_3$pellets, which were doped using Al(OH)$_3$, ADS(aluminium distearate), Al(OH)$_3$+ ADS mixture and sintered at 1$700^{\circ}C$ for 4h in H$_2$, atmospheres, were examined. The sintered densities of Al doped UO$_2$-6wt%Gd$_2$O$_3$pellets were more than 94% T.D.. The open porosity in ADS doped pellets was dramatically decreased. And the amounts of pores less than l${\mu}{\textrm}{m}$ and larger than 10${\mu}{\textrm}{m}$ were decreased regardless of the kinds of doped Al compounds. And the average pore size of Al doped UO$_2$-6wt%Gd$_2$O$_3$pellets was ranged between 2 and 3${\mu}{\textrm}{m}$. While grain structure of non-doped UO$_2$-6wt%Gd$_2$O$_3$pellets was revealed to be duplex type (rocks in sands), that of Al doped pellets to be uniformly equiaxid type. Especially, the grain size in ADS doped pellets was averaged to 4.6${\mu}{\textrm}{m}$.

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Effects of Pd Addition Amount and Method on the Characteristics of SnO2 Semiconductor Thick Films for Alcohol Gas Sensors (Pd 첨가량 및 첨가방법이 알코올 센서용 SnO2 반도체 후막 특성에 미치는 영향 연구)

  • Kim, Jun-Hyung;Kim, Hyeong-Gwan;Lee, Ho-Nyun;Kim, Hyun-Jong;Lee, Hee-Chul
    • Journal of Surface Science and Engineering
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    • v.50 no.5
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    • pp.411-420
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    • 2017
  • In this paper, two methods of making the Pd-added $SnO_2$ ($Pd-SnO_2$) powder with pure tetragonal phase by the hydrazine method were suggested and compared in terms of crystal structure, surface morphology, and alcohol gas response. One of the addition methods is to use $PdCl_2$ as a Pd source, the other is to use Pd-based organic with oleylamine (OAM). When Pd concentration was increased from 0 to 5 wt%, the average grain size of $Pd-SnO_2$ made with Pd-OAM were decreased from 32 to 12 nm. In the case of using with $PdCl_2$, grain size of the $PdCl_2$ fell to less than 10 nm. However, agglomerated and extruded surface morphology was observed for the films with Pd addition over 4 wt%. The crack-free $Pd-SnO_2$ thick films were able to successfully fill the $30{\mu}m$ gap of patterned Pt electrodes by optimized ink dropping method. Also, the 2 wt% $Pd-SnO_2$ thick film made with PdCl2 showed gas responses ($R_{air}/R_{gas}$) of 3.7, 5.7 and 9.0 at alcohol concentrations of 10, 50 and 100 ppm, respectively. On the other hand, the prepared 3 wt% $Pd-SnO_2$ thick film with Pd-OAM exhibited very excellent responses of 3.4, 6.8 and 12.2 at the equivalent measurement conditions, respectively. The 3 wt% $Pd-SnO_2$ thick film with Pd-OAM has a specific surface area of $31.39m^2/g$.

Corrosion Characteristics and Oxide Microstructure of Zirconium Alloys for Nuclear Fuel Cladding (핵연료피복관용 Zr 합금의 부식특성 및 산화막 미세구조)

  • Jeong, Yong-Hwan;Baek, Jong-Hyeok;Kim, Seon-Jae;Kim, Gyeong-Ho;Choi, Byeong-Gwon;Jung, Yeon-Ho
    • Korean Journal of Materials Research
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    • v.8 no.4
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    • pp.368-374
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    • 1998
  • The corrosion characteristics of zirconium alloys have been investigated in various aqueous solutions of LiOH. NaOH, KOH, RbOH. and CsOH at 3S$0^{\circ}C$. The concentrations of solutions were set to 4.3 mmol and 32.Smmol with equimolar $M^+$ and OH . The oxide characterization was performed using TEM on the samples corroded in 32. Smmol LiOH, NaOH, and KOH solution. The samples were prepared to have the same oxide thickness for the pretransition and post- transition regimes. Considering the trend of experimental data, the cation would playa major role in the corrosion process of Zr alloys in alkali hydroxide solutions. The microstructures of the oxides formed in various solutions were quite different. In LiOH solution the oxides grown in pre-transition as well as post-transition had the equiaxed structures with many pores and open grain boundaries. The oxides grown in NaOH solution had the protective columnar structures in pre-transition and the equiaxed structures with many open grain boundaries in post- transition. On the other hand. in KOH solution the columnar structure was maintained from pre- transition to post- transition. It was considered that the cation incorporation into zirconium oxide controlled the oxide characteristics and the corrosion acceleration in alkali hydroxide solutions.

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Precipitation Hardening by Holding After Simulated Complete Firing in a Metal-Ceramic Alloy of Pd-Au-Ag-Sn System (금속-세라믹용 Pd-Au-Ag-Sn계 합금의 모의소성 후 계류에 따른 석출경화)

  • Kim, Min-Jung;Shin, Hye-Jung;Kwon, Yong-Hoon;Kim, Hyung-Il;Seol, Hyo-Joung
    • Korean Journal of Dental Materials
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    • v.43 no.4
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    • pp.343-349
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    • 2016
  • This experiment was carried out to examine whether the post-firing heat treatment is effective in increasing the hardness of metal-ceramic alloy of the Pd-Au-Ag-Sn system. Precipitation hardening by holding at $600^{\circ}C$ after simulated complete porcelain firing in a metal-ceramic alloy of the Pd-Au-Ag-Sn system was examined by observing the change in hardness, crystal structure, and microstructure using a hardness test, X-ray diffraction (XRD), and field emission scanning electron microscopy (FE-SEM). The hardness of the alloy increased apparently by holding the specimen at $600^{\circ}C$ for 30 min after simulated complete porcelain firing. The formation of fine grain interior precipitates during holding at $600^{\circ}C$ caused the formation of lattice strain in the grain interior, resulting in apparent hardening. The faster cooling rate (stage 0) during simulated complete porcelain firing resulted in more effective precipitation hardening during holding at $600^{\circ}C$. From the above results, an appropriate post-firing heat treatment, such as holding at $600^{\circ}C$ for 30 min after complete porcelain firing may increase the durability of metal-ceramic prostheses composed of Pd-Au-Ag-Sn alloy.

The Structural, Electrical, and Optical Properties of ZnO Ultra-thin Films Dependent on Film Thickness (ZnO 초박막의 두께 변화에 따른 구조적, 전기적, 광학적 특성 변화 연구)

  • Kang, Kyung-Mun;Wang, Yue;Kim, Minjae;Lee, Hong-Sub;Park, Hyung-Ho
    • Journal of the Microelectronics and Packaging Society
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    • v.26 no.2
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    • pp.15-21
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    • 2019
  • We investigated the structural, electrical and optical properties of zinc oxide (ZnO) ultra-thin films grown at $150^{\circ}C$ by atomic layer deposition (ALD). Diethylzinc and deionized water were used as metal precursors and reactants, respectively, for the deposition of ZnO thin films. The growth rate per ALD cycle was a constant 0.21 nm/cycle at $150^{\circ}C$, and samples below 50 cycles had amorphous properties due to the relatively thin thickness at the initial ALD growth stage. With the increase of the thickness from 100 cycles to 200 cycles, the crystallinity of ZnO thin films was increased and hexagonal wurtzite structure was observed. In addition, the particle size of the ZnO thin film increased with increasing number of ALD cycles. Electrical properties analysis showed that the resistivity value decreased with the increase of the thin film thickness, which is correlated with the decrease of the grain boundary concentration in the thicker ZnO thin film due to the increase of grain size and the improvement of the crystallinity. Optical characterization results showed that the band edge absorption in the near ultraviolet region (300 nm~400 nm) was increased and shifted. This phenomenon is due to the increase of the carrier concentration with the increase of the ZnO thin film thickness. This result agrees well with the decrease of the resistivity with the increase of the thin film thickness. Consequently, as the thickness of the thin film increases, the stress on the film surface is relaxed, the band gap decreases, and the crystallinity and conductivity are improved.

New Approaches for Overcoming Current Issues of Plasma Sputtering Process During Organic-electronics Device Fabrication: Plasma Damage Free and Room Temperature Process for High Quality Metal Oxide Thin Film

  • Hong, Mun-Pyo
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.02a
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    • pp.100-101
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    • 2012
  • The plasma damage free and room temperature processedthin film deposition technology is essential for realization of various next generation organic microelectronic devices such as flexible AMOLED display, flexible OLED lighting, and organic photovoltaic cells because characteristics of fragile organic materials in the plasma process and low glass transition temperatures (Tg) of polymer substrate. In case of directly deposition of metal oxide thin films (including transparent conductive oxide (TCO) and amorphous oxide semiconductor (AOS)) on the organic layers, plasma damages against to the organic materials is fatal. This damage is believed to be originated mainly from high energy energetic particles during the sputtering process such as negative oxygen ions, reflected neutrals by reflection of plasma background gas at the target surface, sputtered atoms, bulk plasma ions, and secondary electrons. To solve this problem, we developed the NBAS (Neutral Beam Assisted Sputtering) process as a plasma damage free and room temperature processed sputtering technology. As a result, electro-optical properties of NBAS processed ITO thin film showed resistivity of $4.0{\times}10^{-4}{\Omega}{\cdot}m$ and high transmittance (>90% at 550 nm) with nano- crystalline structure at room temperature process. Furthermore, in the experiment result of directly deposition of TCO top anode on the inverted structure OLED cell, it is verified that NBAS TCO deposition process does not damages to the underlying organic layers. In case of deposition of transparent conductive oxide (TCO) thin film on the plastic polymer substrate, the room temperature processed sputtering coating of high quality TCO thin film is required. During the sputtering process with higher density plasma, the energetic particles contribute self supplying of activation & crystallization energy without any additional heating and post-annealing and forminga high quality TCO thin film. However, negative oxygen ions which generated from sputteringtarget surface by electron attachment are accelerated to high energy by induced cathode self-bias. Thus the high energy negative oxygen ions can lead to critical physical bombardment damages to forming oxide thin film and this effect does not recover in room temperature process without post thermal annealing. To salve the inherent limitation of plasma sputtering, we have been developed the Magnetic Field Shielded Sputtering (MFSS) process as the high quality oxide thin film deposition process at room temperature. The MFSS process is effectively eliminate or suppress the negative oxygen ions bombardment damage by the plasma limiter which composed permanent magnet array. As a result, electro-optical properties of MFSS processed ITO thin film (resistivity $3.9{\times}10^{-4}{\Omega}{\cdot}cm$, transmittance 95% at 550 nm) have approachedthose of a high temperature DC magnetron sputtering (DMS) ITO thin film were. Also, AOS (a-IGZO) TFTs fabricated by MFSS process without higher temperature post annealing showed very comparable electrical performance with those by DMS process with $400^{\circ}C$ post annealing. They are important to note that the bombardment of a negative oxygen ion which is accelerated by dc self-bias during rf sputtering could degrade the electrical performance of ITO electrodes and a-IGZO TFTs. Finally, we found that reduction of damage from the high energy negative oxygen ions bombardment drives improvement of crystalline structure in the ITO thin film and suppression of the sub-gab states in a-IGZO semiconductor thin film. For realization of organic flexible electronic devices based on plastic substrates, gas barrier coatings are required to prevent the permeation of water and oxygen because organic materials are highly susceptible to water and oxygen. In particular, high efficiency flexible AMOLEDs needs an extremely low water vapor transition rate (WVTR) of $1{\times}10^{-6}gm^{-2}day^{-1}$. The key factor in high quality inorganic gas barrier formation for achieving the very low WVTR required (under ${\sim}10^{-6}gm^{-2}day^{-1}$) is the suppression of nano-sized defect sites and gas diffusion pathways among the grain boundaries. For formation of high quality single inorganic gas barrier layer, we developed high density nano-structured Al2O3 single gas barrier layer usinga NBAS process. The NBAS process can continuously change crystalline structures from an amorphous phase to a nano- crystalline phase with various grain sizes in a single inorganic thin film. As a result, the water vapor transmission rates (WVTR) of the NBAS processed $Al_2O_3$ gas barrier film have improved order of magnitude compared with that of conventional $Al_2O_3$ layers made by the RF magnetron sputteringprocess under the same sputtering conditions; the WVTR of the NBAS processed $Al_2O_3$ gas barrier film was about $5{\times}10^{-6}g/m^2/day$ by just single layer.

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The Utilization of Pond Ash as Embankment and Backfill Material (매립된 석탄 혼합회의 성토재 및 뒤채움재로서의 활용에 관한 연구)

  • Kim, Dae-Hyeon;Ki, Wan-Seo;Kim, Sun-Hak
    • The Journal of Engineering Geology
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    • v.20 no.3
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    • pp.297-310
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    • 2010
  • This study represents basic research into the utilization of mixed ash (fly ash and bottom ash) from the ash pond of the Taean Thermal Power Plant as a construction material. We conducted physical and mechanical experiments on the mixed ash and examined its engineering characteristics in terms of its use as a material for road landfill and structure backfill. We evaluated the physical and chemical characteristics of the ash by performing tests to determine specific gravity, maximum and minimum density, liquid limit and plastic limit, grain size distribution, composition (by X-ray diffraction), and loss on ignition. We also evaluated the mechanical characteristics by testing for permeability, compaction, CBR, and tri-axial compression. The experiments on the mixed ash yielded a specific gravity of 2.18-2.20, dry density of $9.38-13.32\;kN/m^3$, modified CBR of 16.5%-21%, permeability coefficient of 1.32 to $1.89-10^{-4}cm/sec$, and drained friction angle of $36.43^{\circ}-41.39^{\circ}$. The physical and mechanical properties of the mixed ash do not meet the quality standards stipulated for road landfill and structure backfill materials. Mixed ash with a high content of fly ash failed to meet some of the quality standards. Therefore, in order to utilize the mixed ash as a material for road landfill and structure backfill, it is necessary to improve its properties by mixing with bottom ash.

Effect of Stuffing of TiN on the Diffusion Barrier Property (II) : Cu/TiN/Si Structure (TiN의 충진처리가 확산방지막 특성에 미치는 영향(II) : Cu/TiN/Si 구조)

  • Park, Gi-Cheol;Kim, Gi-Beom
    • Korean Journal of Materials Research
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    • v.5 no.2
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    • pp.169-177
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    • 1995
  • The diffusion barrier property of 100-nm-thick titanium nitride (TiN) film between Cu and Si was investigated using sheet resistance measurements, etch-pit observation, x-ray diffractometry, Auger electron spectroscopy, and transmission electron microscopy. The TiN barrier fails due to the formation of crystalline defects (dislocations) and precipitates (presumably Cu-silicides) in the Si substrate which result from the predominant in-diffusion of Cu through the TiN layer. In contrast with the case of Al, it is identified that the TiN barrier fails only the in-diffusion of Cu because there is no indication of Si pits in the Si substrate. In addition, it appears that the stuffing of TiN does not improve the diffusion barrier property in the Cu/TiN/Si structure. This indicates that in the case of Al, the chemical effect that impedes the diffusion of Al by the reaction of Al with $TiO_{2}$ which is present in the grain boundaries of TIN is very improtant. On the while, in the case of Cu, there is no chemical effect because Cu oxides, such as $Cu_{2}O$ or CuO, is thermodynamically unstable in comparison with $TiO_{2}$. For this reason, it is considered that the effect of stuffing of TiN on the diffusion barrier property is not significant in the Cu/ TiN/Si structure.

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Distribution patterns of macrobenthos in the sandy shore of Hakampo, Korea (학암포 사질조간대 대형저서동물의 분포양상)

  • Nam, Ki-Ung;Ma, Chae-Woo;Son, Dae-Sun;Kim, Jong-Chun
    • Korean Journal of Environment and Ecology
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    • v.29 no.5
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    • pp.729-735
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    • 2015
  • This study was carried out to analyze the community structure and distribution of macrobenthos in Hakampo sandy shore. As for the environmental factors of sampling stations, the average grain size of the sediments from the sampling stations was $2.37{\phi}$ with the range of $1.90{\phi}{\sim}2.52{\phi}$, which represents the typical medium sand sedimentary facies of sandy beach. The average sediment organic content was 1.15% with the range of 0.90%~1.46%. Most stations had low sediment organic content which is typical of sandy beach. The number of species were total 59 from 6 taxa and the individuals was $668inds./m^2$ in the 10 stations of the study area. Based on the Bray-Curtis similarity analysis, the 10 stations of the study area were broadly divided into 3 groups. The highest part of intertidal zone was St. 2~St. 4, the middle part of intertidal zone was St. 5~St. 8, and the lower part of intertidal zone was St. 9~St. 10. A spatial community structure was observed which is divided into the highest, middle, and lower parts.