• The Transactions of the Korean Institute of Electrical Engineers
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• v.41 no.6
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• pp.652-660
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• 1992

0.10Pb(SbS11/2TSnS11/2T)OS13T-0.25PbTiOS13T-0.65PbZrOS13T ceramics modified by LaS12TOS13T(1[mol%]) and MnOS12T(0-0.30[mol%]) were fabricated. The structural and pyroelectric properties with contents of MnOS12T were studied. Crystal structure of a specimen was rhombohedral type and average grain sizes were decreased with increasing the contents of MnOS12T. Relative dielectric constant and dielectric loss factor were minimum in the specimens doped 0.24[mol%]MnOS12T. (PbS10.99TLaS10.01T)[(SbS11/2TSnS11/2T) TiS10.25TZrS10.65T]OS13T specimen modified 0.24[mol%]MnOS12T showed the good pyroelectric properties and pyroelectric coefficient and voltage responsivity were 6.73x10S0-8T[C/cmS02TK], 125[V/W], respectively. Voltage responsivity was increased with decreasing the chopper frequency.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.11a
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• pp.255-258
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• 2000

In this study, the structural, dielectric and piezoelectric properties of Pb[(Sb$\sub$1/2/Nb$\sub$1/2/)$\sub$x/- (Ni$\sub$1/3/Nb$\sub$2/3/)$\sub$0.15-x/- (Zr,Ti)$\sub$0.85/]O$_3$(x = 0, 0.01, 0.02, 0.03, 0.04, 0.05) ceramics is investigated as a function of Pb(Sb$\sub$1/2/Nb$\sub$1/2/)O$_3$ (abbreviated PSN) substitution. With the increase of PSN substitution, the crystal structure is transO$_3$formed from the tetragonal phase to the rhombohedral phase and the grain size is decreased abruptly. The curie temperature is decreased with the PSN substitution. The dielectric constant is increased with the PSN substitution and maximum value of 2290 is obtained at 4mol% PSN. With the PSN substitution, the coercive field is increased and the remnant polarization is decreased. The Electromechanical coupling factor(k$\sub$p/) Is showed the highest value of 0.622 at lmol% PSN and the mechanical quality factor(Q$\sub$m/) is decreased abruptly with the PSN substitution.

• Journal of the Korean institute of surface engineering
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• v.52 no.6
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• pp.310-315
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• 2019

The use of a silicon carbide (SiC)-based composite ceramic layer for the mold of a curved cover glass was demonstrated. The stress of SiC/VDR/graphite-based mold structure was evaluated via finite element analysis. The results revealed that the maximum tensile stress primarly occured at the edge region. Moreover, the stress can be reduced by employing a relatively thick SiC coating layer and, therefore, layers of various thicknesses were deposited by means of chemical vapor deposition. During growth of the layer, the orientation of the facets comprising the SiC grain became dominant with additional intense SiC(220) and SiC(004). However, the roughness of the SiC layer increased with increasing thickness of the layer and. Hence, the thickness of the SiC layer needs to be adjusted by values lower than the tolerance band of the curved cover glass mold.

• Proceedings of the KIEE Conference
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• 2005.07c
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• pp.1989-1991
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• 2005

Lithium titanium oxide as anode material for energy storage prepared by novel synthesis method. $Li_4Ti_5O_{12}$ based spinel-framework structures are of great interest material for lithium-ion batteries. We describe here $Li_4Ti_5O_{12}$ a zero-strain insertion material was prepared by novel sol-gel method and by high energy ball milling (HEBM) of precursor to from nanocrystalline phases. According to the X-ray diffraction and scanning electron microscopy analysis, uniformly distributed $Li_4Ti_5O_{12}$ particles with grain sizes of 100nm were synthesized. Lithium cells, consisting of $Li_4Ti_5O_{12}$ anode and lithium cathode showed the 173 mAh/g in the range of $1.0{\sim}3.0V$. Furthermore, the crystalline structure of $Li_4Ti_5O_{12}$ didn't transfer during the lithium intercalation and deintercalation process.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.5
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• pp.463-467
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• 2008

Aluminum nitride (AlN) thin films have been deposited on Au electrodes by using reactive RF magnetron sputtering method in a gas mixture of Ar and $N_2$ at different substrate temperature. It was found that substrate temperature was varied in the range up to $400^{\circ}C$, highly c-axis oriented film can be obtained at $300^{\circ}C$ with full width at half maximum (FWHM) $3.1^{\circ}$. Increase in surface roughness from 3.8 nm to 5.9 nm found to be associated with increase in grain size, with substrate temperature; however, the AlN film fabricated at $400^{\circ}C$ exhibited a granular type of structure with non-uniform grains. The Al 2p and N 1s peak in the X-ray photoelectron spectroscopy (XPS) spectrum confirmed the formation of Al-N bonds. The XPS spectrum also indicated the presence of oxynitrides and oxides, resulting from the presence of residual oxygen in the vacuum chamber. It is concluded that the AlN film deposited at substrate temperature of $300^{\circ}C$ exhibited the most desirable properties for the application of high-frequency surface acoustic devices.

• Journal of Powder Materials
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• v.8 no.1
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• pp.49-54
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• 2001

The synthesis and characteristics of W-Ni-Fe nanocomposite powder by hydrogen reduction of ball milled W-Ni-Fe oxide mixture were investigated. The ball milled oxide mixture was prepared by high energy attrition milling of W blue powder, NiO and $Fe_2O_3$ for 1 h. The structure of the oxide mixture was characteristic of nano porous agglomerate composite powder consisting of nanoscale particles and pores which act as effective removal path of water vapor during hydrogen reduction process. The reduction experiment showed that the reduction reaction starts from NiO, followed by $Fe_2O_3$ and finally W oxide. It was also found that during the reduction process rapid alloying of Ni-Fe yielded the formation of $\gamma$-Ni-Fe. After reduction at 80$0^{\circ}C$ for 1 h, the nano-composite powder of W-4.57Ni-2.34Fe comprising W and $\gamma$-Ni-Fe phases was produced, of which grain size was35nm for W and 87 nm for $\gamma$-Ni-Fe, respectively. Sinterability of the W heavy alloy nanopowder showing full density and sound microstructure under the condition of 147$0^{\circ}C$/20 min is thought to be suitable for raw material for powder injection molding of tungsten heavy alloy.

• Journal of Powder Materials
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• v.17 no.6
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• pp.464-469
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• 2010

The Cu nanofluid in ethylene glycol was prepared by electrical explosion of wire, a novel one-step method. The X-ray diffraction, field emission scanning electron microscope and transmission electron microscope were used to study the properties of Cu nanoparticles. The results showed that the nanoparticles were consisted of pure face-centered cubic structure and near spherical shape with average grain size of 65 nm. Ultraviolet-visible spectroscopy (UV-Vis) confirmed Cu nanoparticles with a single absorbance peak of Cu surface plasmon resonance band at 600 nm. The nanofluid was found to be stable due to high positive zeta potential value, +51 mV. The backscattering level of nanofluid in static stationary was decreased about 2% for 5 days. The thermal conductivity measurement showed that Cu-ethylene glycol nanofluid with low concentration of nanoparticles had higher thermal conductivity than based fluid. The enhancement of thermal conductivity of nanofluid at a volume fraction of 0.1% was approximately 5.2%.

• Journal of Powder Materials
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• v.14 no.4
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• pp.251-255
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• 2007

This work is to report not only the effect of rapid solidification of $MgZn_{4.3}Y_{0.7}$ alloys on the micro-structure, but also the extrusion behavior on the materials properties. The average grain size of the atomized powders was about $3-4{\mu}m$. The alloy powders of $Mg_{97}Zn_{4.3}Y_{0.7}$, consisted of I-Phase (Icosahedral, $Mg_{3}Zn_{6}Y_{1}$) as well as Cubic structured W-Phase ($Mg_{3}Zn_{3}Y_{2}$), which was finely distributed within ${\alpha}-Mg$ matrix. The oxide layer formed along the Mg surface was about 48 nm in thickness. In order to study the consolidation behavior of Mg alloy powders, extrusion was carried out with the area reduction ratio of 10:1 to 20:1. As the ratio increased, fully deformed and homogeneous microstructure could be obtained, and the mechanical properties such as tensile strength and elongation were simultaneously increased.

• Journal of the Korea Institute of Military Science and Technology
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• v.11 no.4
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• pp.83-91
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• 2008

The development of the equal channel angular pressing(ECAP) process in metals has recently provided a feasible solution to produce ultra-fine or nano-grained bulk materials with tailored material properties. However, ECAP process is difficult to scale up commercially due to requirements of an excessive load. In this paper, a new Hybrid-ECAP process with torsional die is considered to obtain materials of ultra-fine grain structure under low forming load. An upper bound analysis and numerical simulation (DEFORM 3D, a commercial FEM code) are carried out on the torsional die. By the upper bound analysis, analytical expression for the compression force and rotation speed are obtained. By the FEM analysis, the distribution of strain, stress and deformation are obtained. These results show that the Hybrid-ECAP is a useful process because this process can obtain the homogeneous deformations with relatively low forming load. Additionally, due to decreased forming load, die life can be improve.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.42-42
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• 2007

In the future, electronic components will be integrated on flexible polymer substrates and then miniaturized by thin films using suitable thin film technologies. In this article, the concept of a room temperature CVD is demonstrated using $Bi_3NbO_7$ (BNO) films with a cubic fluorite structure and their structural and electrical properties were investigated in films deposited without substrate heating. Effects of substrate temperature on electrical properties of BNO films were also studied. Films deposited without substrate heating (real temperature of $50^{\circ}C$) show partially crystallized BNO single phases with grain size of approximately 6.5 nm. Their dielectric and leakage properties are comparable to those of films deposited by pulsed laser deposition at room temperature. The concept of room temperature CVD will become a new paradigm in the deposition of dielectric thin films for flexible electron device applications.