• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1990년도 추계학술대회 논문집
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• pp.36-38
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• 1990

In this study, a new sintered specimens of Y$\_$1-x/Sm$\_$x/Ba$_2$Cu$_3$O$\_$y/ is composed by substituting Sm for a part of Y in the YBa$_2$Cu$_3$O$\_$y/ high Tc superconductor, in order to study of making (Y$.$Sm)-Ba-Cu-O system sintered specimens and their characteristics. An their change affected on superconductivity and their characteristics are studied by changing the x range of the composition rate. The resistances of electrical characteristics under the conditions of the composition and the temperature are measured by using Ac four probe method in the procedure of this experiments. And it is confirmed that the Meissner effect from the superconductivity of composed Sm system exists in the range of 0

• 한국분말야금학회:학술대회논문집
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• 한국분말야금학회 2006년도 Extended Abstracts of 2006 POWDER METALLURGY World Congress Part 1
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• pp.682-683
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• 2006

Thermoelectric conversion efficiency of thermoelectric elements can be increased by using a structure combining n-type and p-type semiconductors. From the above point of view, attention was directed at ZnO as a candidate n-type semiconductor material and investigations were made. As the result, a dimensionless figure of merit ZT close to 0.28 (1073K) was obtained for specimens produced by the PCS (Pulse Current Sintering) method with addition of specified quantities of $TiO_2$, CoO, and $Al_2O_3$ to ZnO. It was found that the interstitial $TiO_2$ in the ZnO restrains the grain growth and CoO acts onto the bond between grains. The influence of the inclusion of $TiO_2$ and CoO onto the sintering behavior also was investigated.

• 한국전기전자재료학회논문지
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• 제33권6호
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• pp.450-453
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• 2020

In this study, ZnO:Ga thin films were fabricated on a glass substrate using various Ar flows by an RF magnetron sputter system at room temperature. The dependencies of Ar flow on different properties were investigated. An appropriate control over the Ar flow led to the formation of a high-quality thin film. The ZnO:Ga films were formed as a hexagonal wurtzite structure with high (002) preferential orientation. The films exhibited a typical columnar microstructure and a smooth top face. The average transmittance was 85~89% within the visible area. By decreasing the Ar flow, the sheet resistance was decreased due to an increase in the grain size and a decrease in the root mean square roughness. The lowest sheet resistance of 86 Ω/□ was obtained at room temperature for the 40 sccm Ar flow.

• Journal of Welding and Joining
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• 제22권3호
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• pp.56-61
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• 2004

Friction stir weldability of AZ31B Mg alloy was studied using microstructural observation and mechanical tests. Defect free joints was obtained under the condition of 2000rpm-100mm/min. In TMAZ, a lot of twin deformation were observed due to the mechanical effect of the FSW tool and thus relatively high hardness was obtained. In SZ, the twin deformation was disappeared by recovery and the hardness decreased because the. grain structure was coarsened by dynamic recrystallization and grain growth. The Al-Mn precipitates were observed throughout the joint regions. On the other hand, $$\beta$-Mg_{17}Al_{12}$ intermetallic compounds were not observed in either of the zone. The joint efficiency was about 80% and the impact value of the joint was almost equal to that of base metal.

• Journal of Magnetics
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• 제6권2호
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• pp.61-65
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• 2001

The Hopkinson effect in the HDDR-treated $Nd_{15}Fe_{77}B_8$ allay was examined in detail by means of a thermo-magnetic analysis with low magnetic field (600 Oe). The emergence and magnitude of maximum in magnetisation in the thermomagnetic curve due to the Hopkinson effect was correlated with the grain structure and coercivity of the HDDR-treated material. The HDDR-treated materials showed a clear Hopkinson effect (maximum in magnetisation just below the Curie temperature of the $Nd_2Fe_{14}B\;$ phase) on heating. The magnitude of the magnetisation rise due to the Hopkinson effect became smaller as the recombination time increased. The magnetisation recovery at room temperature on cooling from above the Curie temperature became smaller as the recombination time increased. The HDDR-treated materials with shorter recombination time, finer grain size and higher coercivity showed larger magnetisation maximum due to the Hopkinson effect in the thermo-magnetic curve.

• 마이크로전자및패키징학회지
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• 제25권4호
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• pp.101-104
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• 2018

An electric field was applied to a Mo conductive layer in the sandwiched structure of $glass/SiO_2/Mo/SiO_2/a-Si$ to induce Joule heating in order to generate the intense heat needed to carry out the crystallization of amorphous silicon. Polycrystalline silicon was produced via Joule heating through a solid state transformation. Blanket crystallization was accomplished within the range of millisecond, thus demonstrating the possibility of a new crystallization route for amorphous silicon films. The grain size of JIC poly-Si can be varied from few tens of nanometers to the one having the larger grain size exceeding that of excimer laser crystallized (ELC) poly-Si according to transmission electron microscopy. We report here the blanket crystallization of amorphous silicon films using the $2^{nd}$ generation glass substrate.

• 한국세라믹학회지
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• 제53권1호
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• pp.43-49
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• 2016

This analyzed a Young's modulus (E), a thermal expansion coefficient (TEC, ${\beta}$) and a thermal conductivity (${\kappa}$) of the material with simple cubic particulate inclusion using two model structures: a parallel structure and a series structure of laminated layers. The derived ${\beta}$ equations were applied to calculate the ${\beta}$ value of the W-MgO system. The accuracy was higher for the series model structure than for the parallel model structure. Young's moduli ($E_c$) of sintered porous alumina compacts were theoretically related to the development of neck growth of grain boundary between sintered two particles and expressed as a function of porosity. The series structure model with cubic pores explained well the increased tendency of $E_c$ with neck growth rather than the parallel structure model. The thermal conductivity of the three phase system of alumina-mullite-pore was calculated by a theoretical equation developed in this research group, and compared with the experimental results. The pores in the sintered composite were treated as one phase. The measured thermal conductivity of the composite with 0.5-25% porosity (open and closed pores) was in accordance with the theoretical prediction based on the parallel structure model.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2010년도 춘계학술대회 초록집
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• pp.61.1-61.1
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• 2010

$CuIn_{1-x}-GaxSe_2$ based materials with direct bandgap and high absorption coefficient are promising materials for high efficiency hetero-junction solar cells. CIGS champion cell efficiency(19.9%, AM1.5G) is very close to polycrystalline silicon(20.3%, AM1.5G). A reduction in the price of CIGS module is required for competing with well matured silicon technology. Price reduction can be achieved by decreasing the manufacturing cost and by increasing module efficiency. Manufacturing cost is mostly dominated by capital cost. Device properties of CIGS are strongly dependent on doping, defect chemistry and structure which in turn are dependent on growth conditions. The complex chemistry of CIGS is not fully understood to optimize and scale processes. Control of the absorber grain size, structural quality, texture, composition profile in the growth direction is important to achieving reliable device performance. In the present work, CIS nanoparticles were prepared by a simple wet chemical synthesis method and their structural and optical properties were investigated. XRD patterns of as-grown nanopowders indicate CIS(Cubic), $CuSe_2$(orthorhombic) and excess selenium. Further, as-grown and annealed nanopowders were characterized by HRTEM and ICP-OES. Grain growth of the nanopowders was followed as a function of temperature using HT-XRD with overpressure of selenium. It was found that significant grain growth occurred between $300-400^{\circ}C$ accompanied by formation of ${\beta}-Cu_{2-x}Se$ at high temperature($500^{\circ}C$) consistent with Cu-Se phase diagram. The result suggests that grain growth follows VLS mechanism which would be very useful for low temperature, high quality and economic processing of CIGS based solar cells.

• Corrosion Science and Technology
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• 제14권3호
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• pp.120-126
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• 2015

The usage of bending products recently have increased since many industries such as automobile, aerospace, shipbuilding, and chemical plants need the application of pipings. Bending process is one of the inevitable steps to fabricate the facilities. Induction heat bending is composed of compressive bending process by local heating and cooling. This work focused on the effect of induction heat bending process on the properties of ASME SA312 Gr. TP304 stainless steel pipes. Tests were performed for base metal and bended area including extrados, intrados, crown up, and down parts. Microstructure was analyzed using an optical microscope and SEM. In order to determine intergranular corrosion resistance, Double Loop Electrochemical Potentiokinetic Reactivation (DL-EPR) test and ASTM A262 practice A and C tests were done. Every specimen revealed non-metallic inclusion free under the criteria of 1.5i of the standard and the induction heat bending process did not affect the non-metallic inclusion in the alloys. Also, all the bended specimens had finer grain size than ASTM grain size number 5 corresponding to the grain sizes of the base metal and thus the grain size of the pipe bended by induction heat bending process is acceptable. Hardness of transition start, bend, and transition end areas of ASME SA312 TP304 stainless steel was a little higher than that of base metal. Intergranular corrosion behavior was determined by ASTM A262 practice A and C and DL-EPR test, and respectively step structure, corrosion rate under 0.3 mm/y, and Degree of Sensitization (DOS) of 0.001~0.075% were obtained. That is, the induction heat bending process didn't affect the intergranular corrosion behavior of ASME SA312 TP304 stainless steel.

• Current Photovoltaic Research
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• 제2권1호
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• pp.1-7
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• 2014

We developed a method of growing thin Si film at $600^{\circ}C$ by hot wire CVD using a very thin large-grained poly-Si seed layer for thin-film Si solar cells. The seed layer was prepared by crystallizing an amorphous Si film by vapor-induced crystallization using $AlCl_3$ vapor. The average grain size of the p-type epitaxial Si layer was about $20{\mu}m$ and crystallographic defects in the epitaxial layer were mainly low-angle grain boundaries and coincident-site lattice boundaries, which are special boundaries with less electrical activity. Moreover, with a decreasing in-situ boron doping time, the mis-orientation angle between grain boundaries and in-grain defects in epitaxial Si decreased. Due to fewer defects, the epitaxial Si film was high quality evidenced from Raman and TEM analysis. The highest mobility of $360cm^2/V{\cdot}s$ was achieved by decreasing the in-situ boron doping time. The performance of our preliminary thin-film solar cells with a single-side HIT structure and $CoSi_2$ back contact was poor. However, the result showed that the epitaxial Si film has considerable potential for improved performance with a reduced boron doping concentration.