• Journal of the Korean Ceramic Society
• /
• v.38 no.10
• /
• pp.914-920
• /
• 2001

The grain orientation distribution and grain boundary characterization of $ZrB_2$-ZrC composites sintered by a SPS(Spark Plasma Sintering) method, a new sintering technique were analyzed by the EBSP technique and then their crystallographic results have been compared with those of a sintered specimen using a PLS(Pressureless Sintering) method. In the $ZrB_2$-ZrC composite manufactured by SPS, (0001) planes of $ZrB_2$ were oriented in the direction normal to the specimen surface. In the case of PLS, those of $ZrB_2$ were oriented normal to the electron beam. In both cases of PLS and SPS, ZrC grains had the randomly oriented grain structure. The grain boundary characterization showed that low angle grain boundaries in the PLS and SPS processed materials constituted about 10% and 8% of the total number of boundaries, respectively, represented the only slight difference between the proportion of low angle grain boundary. However, in the distribution of CSL(Coincident Site Lattice) boundaries, it was shown the higher proportion of CSL boundaries with $\Sigma$ 3,5,7,9, 11 in the SPS processed material.

• Journal of the Korean Institute of Telematics and Electronics
• /
• v.24 no.6
• /
• pp.980-985
• /
• 1987

The thin metal films of Cr, Al, Mn and were made in various evaporation rates with 100\ulcornerthickness under 2x10**-9 bar vacuum level. We analized and discussed the relationships between changes of structure, morphology and sheet resistance, light transmittance for the corresponding evaporation rates. As the evaporation rates were decreased at higher rates, grain sizes of all film were decreased, however both of the sheet resistance and light transmittance were increased. At lower evaporation rate, films of Cr and Cu porduced non-stoi-chiometric oxides but Al an Mn showed up amorphous structures.

• Korean Journal of Soil Science and Fertilizer
• /
• v.5 no.2
• /
• pp.65-74
• /
• 1972

A local rice variety, Jinheung and newly bred IR667-Suwon 214 were grown in $5m^2$ concret pot with two spacings and two nitrogen levels and their ripening structure and its function were comparatively investigated to elucidate the causes of unusually low ripened grain ratio of IR667 lines. The following differences between two varieties were found. 1. Though IR667 had much lower ripened grain ratio (64%) than Jinheung (85%) grain yield(790 kg/10a) of IR667 was higher than that (760 kg/10a) of Jinheung. 2. Number of ripined grain per net assimiration rate (NAR) at 10 days after heading was a little higher in IR667 (6,490) than in Jinheung (6,360) consiting to lower grain weight ($29.9{\times}10^{-3}g$) in IR667 than $31.2{\times}10^{-3}g$ of Jinheung. But number of total grain per NAR was much higher (10,530) in IR667 than 7,290 of Jinheung indicating that it was the probable cause of low ripened grain ratio of IR667. 3. Extinction coeificient (K) was 0.115 in IR667 and 0.200 in Jinheung, thus IR667 could construct greater ripening structure per unit area. 4. Number of grain per LAI was decreased with increasing LAI at heading and the decreasing rate was similar for both IR667 and Jinheung. 5. Critical leaf area index at which crop growth rata (CGR) is maximum was 6.5 for IR667 and 5.2 for Jinheung. Below 5.2 of LAI net assimilation rate was always higher an Jinheung throughout the growing season. 6. The estimated optimum leaf area index having maximum grain yield was 7.4 for IR667 and 6.2 for Jinheung at 10 days after heading. However, actual leaf area index was 6.2 for IR-667 and 4.7 for Jinheung and these were even below critical leaf area index. 7. The decrease of LAI during ripening period was great in IR667 but photosynthesis per $m^2$ was decreased more rapidly in Jinheung. 8. Net assimilation rate (NAR) decreased with the increase of LAI at any time of ripening period. The decreasing rate of NAR with the increase of LAI was greater in IR667 with ripening. The greater decreasing rate of NAR in IR667 seemed to be attributed to low photosynthetic activity and high respiratory loss due to the requirement of higher optimum temperature of ripening. 9. Grain yield-ripened grain ratio curve showed less contribution of dry matter yield after heading to grain yield in IR667 than in Jinheung due to unfavorable ripening environment(specialy air temperature) indicating that yield of IR667 could most effectively increased through the improvement of ripening environment.

• Korean Journal of Materials Research
• /
• v.27 no.8
• /
• pp.431-437
• /
• 2017

This study investigated the surface pit corrosion of SS420J2 stainless steel accompanied by intergranular crack. To reveal the causes of surface pits and cracks, OM, SEM, and TEM analyses of the microstructures of the utilized SS420J2 were performed, as was simulated heat treatment. The intergranular cracks were found to have been induced by a grain boundary carbide of $(Cr,Fe)_{23}C_6$, which was identified by SEM/EDS and TEM diffraction analyses. The mechanism of grain boundary sensitization occurred at the position of the carbide, followed by its occurrence at the Cr depleted zone. The grain boundary carbide of $(Cr,Fe)_{23}C_6$ type precipitated during air cooling condition after a $1038^{\circ}C$ solid solution treatment. The carbide precipitate formation also accelerated at the band structure formed by cold working. Therefore, using manufacturing processes of cooling and cold working, it is difficult to protect SS420J2 stainless steel against surface pit corrosion. Several counter plans to fight pit corrosion by sensitization were suggested, involving alloying and manufacturing processes.

• Journal of the Korean Ceramic Society
• /
• v.48 no.4
• /
• pp.323-327
• /
• 2011

The effects of $Dy_2O_3$ and $Er_2O_3$ co-doping on electrical properties and temperature stability of barium titanate ($BaTiO_3$) ceramics were investigated in terms of microstructure and structural analysis. The dielectric constant and the insulation resistance (IR) of 0.7 mol% $Dy_2O_3$ and 0.3 mol% $Er_2O_3$ co-doped dielectrics had about 60% and 20% higher than the values of undoped one, respectively, and the temperature coefficient of capacitance (TCC) met the X7R specification. The addition of $Dy_2O_3$ contributed to electrical properties caused by increase of tetragonality; however, preferential diffusion of $Dy^{3+}$ ions toward A site in $BaTiO_3$ grain exhibited an adverse effect on temperature stability by grain growth. On the other hand, The $Er_2O_3$ addition in $BaTiO_3$ could affect the TCC behavior and the IR with suppression of grain growth caused by reinforcement of grain boundary and electrical compensation. Therefore, the enhanced electrical properties and temperature stability through the co-doping could be deduced from the increase of tetragonality and the suppression of grain growth.

• Journal of the Korean Vacuum Society
• /
• v.16 no.6
• /
• pp.433-438
• /
• 2007

We fabricated thin films of Au and Ta/Au with thicknesses of 30 nm and 5 nm/30nm, respectively on Si(100) or Si(111) substrates using a dc magnetron sputtering system. Grain sizes, roughness and conductivity for Au thin films are measured as a function of the annealing temperatures. We observed that the grain size of samples enlarged and the surface became rougher with increasing annealing temperature. The grain size and roughness were improved in the structure of Si/Ta/Au than Si/Au. Furthermore, the Si(100) substrate was more effective for decreasing the resistance for Ta/Au system than Si(111) substrate. We confirm that by inserting a Ta buffer layer in Si(100)/Au, surface roughness was reduced and by adjusting the annealing temperature the grain size were enlarged. Consequently, the Au thin-film has improved conductivity.

• Journal of the Korean institute of surface engineering
• /
• v.29 no.6
• /
• pp.862-868
• /
• 1996

Cadmium sulfide is commonly used as the window material for thin film solar cells, and can be prepared by several techniques such as sputtering, spray pyrolysis, close spaced sublimation (CSS), thermal evaporation, solution growth methods, etc. In this study, CdS films were deposited by thermal evaporation, close spaced sublimation, and solution growth methods, respectively, and the effects of the methods on physical properties of polycrystalline CdS deposited on ITO/glass were investigated. Also, the effects of variously prepared CdS thin films on the physical properties of CdTe deposited on the CdS were investigated. The thickness of polycrystalline CdS films was maintained at $0.3\mu\textrm{m}$ except for the solution grown CdS when $0.2\mu\textrm{m}$ thick CdS was deposited. After the deposition, all the samples were annealed at $400^{\circ}C$ or $500^{\circ}C$ in H2 atmosphere. To investigate physical properties of the deposited and annealed CdS thin films, UV-VIS spectro-photometry, X-ray diffractometry (XRD), and Auger electron spectroscopy (AES), and cross sectional transmission electron microscopy(XTEM) were used to analyze grain size, crystal structure, preferred orientation, optical properties, etc. The annealed CdS showed the bandedge transition at 510nm and the optical transmittance high than 80% for all of the variously deposited films. XRD results showed that CdS thin films variously deposited and annealed had the same hexagonal structures, however, showed different preferred orientations. CSS grown CdS had [103] preferred orientation, thermally evaporated CdS had [002], and CdS grown by the solution growth had no preferred orientation. The largest grain size was obtained for the CSS grown CdS while the least grain size was obtained for the solution grown CdS. Some of the physical properties of CdTe deposited on the CdS thin film such as grain size at the junction and grain orientation were affected by the physical properties of CdS thin films.

• Korean Journal of Materials Research
• /
• v.23 no.1
• /
• pp.41-46
• /
• 2013

The microstructural evolution of AA1050/AA6061 complex aluminum alloy, which is fabricated using an accumulative roll-bonding (ARB) process, with the proceeding of ARB, was investigated by electron back scatter diffraction (EBSD) analysis. The specimen after one cycle exhibited a deformed structure in which the grains were elongated to the rolling direction for all regions in the thickness direction. With the proceeding of the ARB, the grain became finer; the average grain size of the as received material was $45{\mu}m$; however, it became $6.3{\mu}m$ after one cycle, $1.5{\mu}m$ after three cycles, and $0.95{\mu}m$ after five cycles. The deviation of the grain size distribution of the ARB processed specimens decreased with increasing number of ARB cycles. The volume fraction of the high angle grain boundary also increased with the number of ARB cycles; it was 43.7% after one cycle, 62.7% after three cycles, and 65.6% after five cycles. On the other hand, the texture development was different depending on the regions and the materials. A shear texture component {001}<110> mainly developed in the surface region, while the rolling texture components {011}<211> and {112}<111> developed in the other regions. The difference of the texture between AA1050 and AA6061 was most obvious in the surface region; {001}<110> component mainly developed in AA1050 and {111}<110> component in AA6061.

• Journal of the Korea Institute of Information and Communication Engineering
• /
• v.18 no.3
• /
• pp.638-642
• /
• 2014

In this study, we investigate on the crystal microstructure and magneto-resistance (MR) change of Bismuth(Bi) thin films for annealing process, in order to apply Bi thin films to the spin electronic devices. As-prepared Bi thin films show the randomly oriented find grains whose size was measured to about 100 nm and the very low MR (4.7 % at room temperature) while careful annealing results in not only grain growth up to ${\sim}2{\mu}m$ but also drastic MR improvement (404 % at room temperature). The drastic change in the MR after applying the annealing process is attributed to the grain growth decreasing grain boundary scattering of electron. Therefore, in this study, we confirm the annealing effect for the grain boundary formation and MR improvement of Bi thin films, and demonstrate the feasibility of spin electronic devices.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2012.08a
• /
• pp.251-252
• /
• 2012

Recently, the growing interest in organic microelectronic devices including OLEDs has led to an increasing amount of research into their many potential applications in the area of flexible electronic devices based on plastic substrates. However, these organic devices require a gas barrier coating to prevent the permeation of water and oxygen because organic materials are highly susceptible to water and oxygen. In particular, high efficiency OLEDs require an extremely low Water Vapor Transition Rate (WVTR) of $1{\times}10^{-6}g/m^2$/day. The Key factor in high quality inorganic gas barrier formation for achieving the very low WVTR required ($1{\times}10^{-6}g/m^2$/day) is the suppression of defect sites and gas diffusion pathways between grain boundaries. In this study, we developed an $Al_2O_3$ nano-crystal structure single gas barrier layer using a Neutral Beam Assisted Sputtering (NBAS) process. The NBAS system is based on the conventional RF magnetron sputtering and neutral beam source. The neutral beam source consists of an electron cyclotron Resonance (ECR) plasma source and metal reflector. The Ar+ ions in the ECR plasma are accelerated in the plasma sheath between the plasma and reflector, which are then neutralized by Auger neutralization. The neutral beam energies were possible to estimate indirectly through previous experiments and binary collision model. The accelerating potential is the sum of the plasma potential and reflector bias. In previous experiments, while adjusting the reflector bias, changes in the plasma density and the plasma potential were not observed. The neutral beam energy is controlled by the metal reflector bias. The NBAS process can continuously change crystalline structures from an amorphous phase to nano-crystal phase of various grain sizes within a single inorganic thin film. These NBAS process effects can lead to the formation of a nano-crystal structure barrier layer which effectively limits gas diffusion through the pathways between grain boundaries. Our results verify the nano-crystal structure of the NBAS processed $Al_2O_3$ single gas barrier layer through dielectric constant measurement, break down field measurement, and TEM analysis. Finally, the WVTR of $Al_2O_3$ nano-crystal structure single gas barrier layer was measured to be under $5{\times}10^{-6}g/m^2$/day therefore we can confirm that NBAS processed $Al_2O_3$ nano-crystal structure single gas barrier layer is suitable for OLED application.