• 제목/요약/키워드: Grain Boundary Diffusion

검색결과 144건 처리시간 0.025초

고크롬 (α+γ) 2상강의 결정립 성장기구 (A study on the grain growth mechanism in dual-phase high Cr-steel)

  • 위명용
    • 열처리공학회지
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    • 제11권4호
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    • pp.324-332
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    • 1998
  • The grain growth characteristics of dual-phase (${\alpha}+{\gamma}$) containing high Cr-steel have investigate using ${\alpha}$-, ${\gamma}$-single phases and (${\alpha}+{\gamma}$)dual-phase of 12%Cr Steel. The heat treatment has performed at $1000-1200^{\circ}C$ for 1-100hr. The results are as follows : 1) The grain growth rate in (${\alpha}+{\gamma}$) dual phase was substantially slower than that of single grain. 2) The relation between mean grain radius $\bar{{\gamma}}$ and annealing time t is, in general, described as following equation : $$(\bar{{\gamma}})^n-(\bar{{\gamma}_o})^n=K_n{\cdot}t{\cdots}{\cdots}(1)$$ i) In the case of single phase of high Cr steel, Eq.(1) is described as $(\bar{{\gamma}})^2-(\bar{{\gamma}_o})^2=K_2{\cdot}t$ and the grain growth is controlled by boundary migration. ii) In dual phase, the grain growth needs diffusion of alloying elements because the chemical composition of ${\alpha}$- and ${\gamma}$- phases differs from each other. When the volume fraction of ${\alpha}$-, ${\gamma}$-phase was almost equal and ${\gamma}$-phase in the case of 80 and $90%{\gamma}$. Eq.(1) is described as $(\bar{{\gamma}})^3-(\bar{{\gamma}_o})^3=K_3{\cdot}t$ because the grain growth is controlled by volume diffusion iii) In the case of ${\gamma}$-rich phase (80 and $90%{\gamma}$), the grain growth of minor phase (10 and $20%{\alpha}$) is described as $(\bar{{\gamma}})^4-(\bar{{\gamma}_o})^4=K_4{\cdot}t$ because the boundary diffusion is predominent rather than volume diffusion.

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PWR 1차측 환경에서 Alloy 600 응력부식균열 선단 부근에서의 산화 거동 (Oxidation Behavior around the Stress Corrosion Crack Tips of Alloy 600 under PWR Primary Water Environment)

  • 임연수;김홍표;황성식
    • Corrosion Science and Technology
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    • 제11권4호
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    • pp.141-150
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    • 2012
  • Stress corrosion cracks in Alloy 600 compact tension specimens tested at $325^{\circ}C$ in a simulated primary water environment of pressurized water reactor were analyzed by analytical transmission electron microscopy and secondary ion mass spectroscopy (SIMS). From a fine-probe chemical analysis, oxygen was found on the grain boundary just ahead of the crack tip, and chromium oxides were precipitated on the crack tip and the grain boundary attacked by the oxygen diffusion, leaving a Cr/Fe depletion (or Ni enrichment) zone. The oxide layer inside the crack was revealed to consist of a double (inner and outer) layer. Chromium oxides existed in the inner layer, with NiO and (Ni,Cr) spinels in the outer layer. From the nano-SIMS analysis, oxygen was detected at the locations of intergranular chromium carbides ahead of the crack tip, which means that oxygen diffused into the grain boundary and oxidized the surfaces of the chromium carbides. The intergranular chromium carbide blunted the crack tip, thereby suppressing the crack propagation.

결정입계 처리에 따른 다결정 실리콘 태양전지의 효율 향상 (Efficiency Improvement of Polycrystalline Silicon Solar Cells using a Grain boundary treatment)

  • 김상수;김재문;임동건;김광호;원충연;이준신
    • E2M - 전기 전자와 첨단 소재
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    • 제10권10호
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    • pp.1034-1040
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    • 1997
  • A solar cell conversion effiency was degraded by grain boundary effect in polycrystalline silicon. Grain boundaries acted as potential barriers as well as recombination centers for the photo-generated carriers. To reduce these effects of the grain boundaries we investigated various influencing factors such as emitter thickness thermal treatment preferential chemical etching of grain boundaries grid design contact metal and top metallization along boundaries. Pretreatment in $N_2$atmosphere and gettering by POCl$_3$and Al were performed to obtain multicrystalline silicon of the reduced defect density. Structural electrical and optical properties of slar cells were characterized before and after each fabrication process. Improved conversion efficiencies of solar cell were obtained by a combination of pretreatment above 90$0^{\circ}C$ emitter layer of 0.43${\mu}{\textrm}{m}$ Al diffusion in to grain boundaries on rear side fine grid finger top Yb metal and buried contact metallization along grain boundaries.

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소성변형의 분자론 (제2보). 응용 (Molecular Theory of Plastic Deformation (II). Applications)

  • 김창홍;이태규
    • 대한화학회지
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    • 제21권5호
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    • pp.339-352
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    • 1977
  • 소성변형에 대한 저자들의 이론(제1보)을 요업재료, 금속, 합금 및 단결정들에 적용하였다. 그 결과 다중 결정에서는 dislocation 운동과 grain boundary 운동이 실험조건에 따라 함께 또는 분리되어 나타나는 반면 단결정에서는 dislocation 운동만 나타났다. 유동식에 나타나는 파라미터$({\alpha}_{d1},\;1/{\beta}_{d1})와\;({\alpha}_{gj}/X_{gj},\;1/{\beta}_{gj})$ (j = 1 or 2) 및 활성화엔탈피 ${\Delta}H_{k1}^{\neq}$ (k = d 혹은 g)를 구하여 예측한 소성변형은 실험과 잘 일치함을 보았다. 여기서 첨자 d1는 첫번째의 dislocation 유동단위, gj는 j번째 grain boundary 유동단위를 나타낸다. 활성화엔탈피에 대하여 ${\Delta}H_{d1}^{\neq}$는 bulk의 자체확산에 대한 활성화엔탈피와 일치하고 ${\Delta}H_{g1}^{\neq}$는 grain boundary 자체확산에 대한 활성화엔탈피와 일치하였다. 이 사실은 저자들의 이론의 정당성을 보이고 있다.

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액상확산접합한 Ni기 초내열합금의 등온응고거동에 미치는 모재결정입계의 영향 (The Effect of Base Metal Grain Boundary on Isothermal Solidification Phenomena during TLP Bonding of Ni Base Superalloys)

  • 김대업
    • Journal of Welding and Joining
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    • 제19권3호
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    • pp.325-333
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    • 2001
  • The effect of base metal grain size on isothermal solidification behavior of Ni-base superalloy, CMSX-2 during transient liquid phase (TLP) bonding was investigated employing MBF-80 insert metal. TLP-bonding of single crystal. coarse-grained and fine-grained CMSX-2 was carried out at 1373∼1548k for various holding time in vacuum. The eutectic width diminished linearly with the square root of holding time during isothermal solidification process for single crystal, coarse-grained and fine-grained base metals. The completion time for isothermal solidification decreased in the order ; single crystal, coarse-grained and fine-grained base metals. The difference of isothermal solidification rates produced when bonding the different base metals could be explained quantitatively by the effect of base metal grain boundaries on the apparent average diffusion coefficient of boron in CMSX-2.

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철강 하니콤구조의 접합강도 (Bond Strength of Steel honeycomb Structure)

  • 송건;홍영환
    • 열처리공학회지
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    • 제16권4호
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    • pp.197-204
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    • 2003
  • Honeycomb structure has been fabricated by brazing method using 0.1 wt%C and 1.0wt%C carbon steel core and STS304 stainless steel face sheet. Core shear strength ratio in W and L directions was 1:1.03 in 7 mm cell size, whereas 1:1.45 in 4 mm cell size. Flexural strength on face sheet was 166.4 MPa (0.1 wt%C, W direction), 171.1 MPa (0.1 wt%C, L direction), and 120.2 MPa (1.0 wt%C, W direction) in 7 mm cell size. And in 4mm cell size specimen, it was 169.2 MPa (0.1 wt%C, W direction), 224.2 MPa (0.1 wt%C, L direction). This means that flexural strength of 0.1 wt%C core material was higher than that of 1.0wt%C core material, which was contrary to expectation. SEM and EDS analysis represented that grain boundary diffusion had occurred in0.1 wt%C core, but no grain boundary diffusion in 1.0 wt%C core. And corrugated surface of 0.1 wt%C core was flat, whereas that of 1.0 wt%C core was not flat. As a result, contact area between two 1.0 wt%C cores was much less than that of 0.1 wt% cores, It is thought to be main reason for lower flexural strength of 1.0 wt%C core.

표면 코팅된 분말을 이용하여 제조된 반도성 $SrTiO_3$ 소결체의 입계화학과 전기적 특성 (Grain Boundary Chemistry and Electrical Characteristics of Semiconducting $SrTiO_3$ Ceramics Synthesized from Surface-Coated Powders)

  • 박명범;김정돈;허현;조남희
    • 한국세라믹학회지
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    • 제36권11호
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    • pp.1252-1260
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    • 1999
  • The defect chemistry and electrical characteristics of the grain boundaries of semiconducting SrTiO3 ceramics synthesized with wet-chemically surface-coated powders were investigated. The starting powders were separated into groups of 1-10${\mu}{\textrm}{m}$ 10-20${\mu}{\textrm}{m}$ etc by sedimentation and sieving methods. Na+ ions were absorbed on the powder surfaces by wet chemical-treatment method. The width of the grain boundary ranged up to several nm and the intergranular materials was amorphous. The additives coated on the surface of the powders were observed to be present at the grain boundaries of the ceramics. The diffusion depth of the additives into grains was about 30nm for the SrTiO3 ceramics synthesized with 5w/o coated materials, The threshold voltage grain boundary resistance and boundary potential barrier of the ceramics increased from 0.67V/cm 2.27k$\Omega$ and 0.05eV to 80.9V/cm 13.0k$\Omega$ 1.44eV with increasing the amount of the additives from 0 to 5 w/o respectively .

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입계확산에 의한 반도성 $SrTiO_3$ 세라믹스의 입계구조 및 전기적 특성 변화 (The Effect of Grain Boundary Diffusion on the Boundary Structure and Electrical Characteristics of Semiconductive $SrTiO_3$ Ceramics)

  • 김태균;조남희
    • 한국세라믹학회지
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    • 제34권1호
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    • pp.23-30
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    • 1997
  • SrCO3 TiO2, 그리고 Nb2O5를 출발원료로 하여 환원분위기하에서 반도성 SrTiO3 소결첼르 제조하였다. 반도성 다결정 소결체 내에서 acceptor 역할을 할 수 있는 Na과 K 이온을 입계를 따라 80$0^{\circ}C$~120$0^{\circ}C$ 온도범위에서 확산시킨 후, 열처리조건에 따른 입계의 전기적 화학적 특성을 고찰하였다. 이차열처리한 소결체의 입계에는 일정한 전기적 포텐셜장벽과 이에 상관된 전자고갈영역이 형성되어 비선형적인 전류-전압 특성을 보이고 문턱전압(threshold voltage)은 10~70V, 입계포텐셜장벽은 0.1~2eV의 크기를 나타내었다. Na과 K 이온은 입계로부터 입자내부로 확산하여 20~50 nm 깊이의 확산층을 형성하며, 이들 확산층에서 Na 또는 K과의 치환에 기인하여 Sr농도가 감소하였으며 치환에 따른 전기적 중성유지를 위하여 산소 vacancy 농도가 증가하였다.

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A combined stochastic diffusion and mean-field model for grain growth

  • Zheng, Y.G.;Zhang, H.W.;Chen, Z.
    • Interaction and multiscale mechanics
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    • 제1권3호
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    • pp.369-379
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    • 2008
  • A combined stochastic diffusion and mean-field model is developed for a systematic study of the grain growth in a pure single-phase polycrystalline material. A corresponding Fokker-Planck continuity equation is formulated, and the interplay/competition of stochastic and curvature-driven mechanisms is investigated. Finite difference results show that the stochastic diffusion coefficient has a strong effect on the growth of small grains in the early stage in both two-dimensional columnar and three-dimensional grain systems, and the corresponding growth exponents are ~0.33 and ~0.25, respectively. With the increase in grain size, the deterministic curvature-driven mechanism becomes dominant and the growth exponent is close to 0.5. The transition ranges between these two mechanisms are about 2-26 and 2-15 nm with boundary energy of 0.01-1 J $m^{-2}$ in two- and three-dimensional systems, respectively. The grain size distribution of a three-dimensional system changes dramatically with increasing time, while it changes a little in a two-dimensional system. The grain size distribution from the combined model is consistent with experimental data available.

입계기공의 확산성장 모델을 이용한 고온기기의 크립균열전파해석(1)-응력장 및 균열전파속도에 미치는 입계기공의 영향- (Analysis of Creep Crack Growth at High-Temperature Components by Diffusive Growth Model of Grain Boundary Cavities (I)-Effect of Grain Boundary Cavitation on Stress Field and Crack Growth Rate-)

  • 전재영
    • 대한기계학회논문집A
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    • 제20권4호
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    • pp.1177-1185
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    • 1996
  • The crack growth under creep condition is one of the major damage mechanisms which determines remaining life of the component operating at high temperatures. In this paper, the creep crack growth by grain boundary cavitation is studied, which is frequently observed failure mechanism for creep brittle materials. As a result of diffusive growth of creep cavities, it is shown that the crack-tip stress field is modified from the original stress distribution by the amount of singularity attenuation parameter which is function of crack growth rate and material properties. Also, the stress relaxation at crack-tip results in the extension of cavitating area by the load dump effect to meet the macroscopic force equilibrium conditdion.