• 제목/요약/키워드: Glass substrate

검색결과 1,662건 처리시간 0.03초

동시 스퍼터링법에 의한$Pb(Fe^{0.5},Nb^{0.5}O_3$박막의 제조 및 특성 평가에 대한 연구 (A study on the fabrication of $Pb(Fe^{0.5},Nb^{0.5}O_3$ thin films by a Co-sputtering technique and their characteristics properties)

  • 이상욱;신동석;최인훈
    • 한국진공학회지
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    • 제7권1호
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    • pp.17-23
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    • 1998
  • RF magnetron co-sputtering법으로 PFN[$Pb(Fe_{0.5}Nb_{0.5}O_3(PFN)$]박막을 제조한 후 급속 열처리(rapid thermal annealing, RTA)하여 XRD(s-ray diffractometer)를 통한 박막의 상변 태 및 전기적 특성에 대하여 연구하였다. $SiO_2$/Si, ITO/glass, 및 Pt/Ti/$SiO_2$/Si기판에 PFN 박막을 증착시켰다. 기판의 변화에 따른 증착된 PFN박막의 조성변화는 관찰할 수 없었다. ITO/glass기판을 사용한 경우와 $SiO_2$/Si기판을 사용하여 증착시킨 PFN박막의 결정구조를 분석한 결과 ITO/glass기판에 증착한 시편이 perovskite상으로의 결정화가 더욱 우세하였다. 이는$SiO_2$기판의 경우 Pb의 확산에 의해 결정화가 잘 되지 못하기 때문이다. Pt/Ti/$SiO_2$/Si 기판 위에 증착시킨 PFN박막의 경우 perovskite상과 pyrochlore상이 공존하였다. Perovskite 상으로의 상변태에 대한 중요한 변수로는 열처리 온도와 Pb의 함량인 것이 확인되었으며, Pb의 함량이 화학양론적 조성비에 비해 5-10%정도 과량일수록 perovskite상으로의 상변태 온도가 낮아지고 상전이 정도가 향상되는 것으로 나타났으며, 급속 열처리 후 XRD를 이용 한 결정성 분석결과를 통해 결정한 perovskite상으로의 상전이 최저온도는 $500^{\circ}C$였다. Pb/(Fe+Nb)의 조성비가 1.17인 경우의 박막을 질소 분위기 하에서 $600^{\circ}C$로 30초간 급속열 처리 하였을 때 낮은 누설 전류 값과 1kHz에서 88의 유전 상수 값, 2.0$\mu$C/$\textrm{cm}^2$의 잔류 분극 값과 144kV/cm의 항전계 값을 얻었다.

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Luminous Characteristics of Transparent Field Emitters Produced by Using Ultra-thin Films of Single Walled Carbon Nanotubes

  • Jang, Eun-Soo;Goak, Jeung-Choon;Lee, Han-Sung;Lee, Seung-Ho;Lee, Nae-Sung
    • 한국재료학회:학술대회논문집
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    • 한국재료학회 2009년도 춘계학술발표대회
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    • pp.31.1-31.1
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    • 2009
  • Carbon nanotubes (CNTs) are attractive material because of their superior electrical, mechanical, and chemical properties. Furthermore, their geometric features such as a large aspect ratio and a small radius of curvature at tip make them ideal for low-voltage field emission devices including backlight units of liquid crystal display, lighting lamps, X-ray source, microwave amplifiers, electron microscopes, etc. In field emission devices for display applications, the phosphor anode is positioned against the CNT emitters. In most case, light generated from the phosphor by electron bombardment passes through the anode front plate to reach observers. However, light is produced in a narrow depth of the surface of the phosphor layer because phosphor particles are big as much as several micrometers, which means that it is necessary to transmit through the phosphor layer. Hence, a drop of light intensity is unavoidable during this process. In this study, we fabricated a transparent cathode back plate by depositing an ultra-thin film of single walled CNTs (SWCNTs) on an indium tin oxide (ITO)-coated glass substrate. Two types of phosphor anode plates were employed to our transparent cathode back plate: One is an ITO glass substrate with a phosphor layer and the other is a Cr-coated glass substrate with phosphor layer. For the former case, light was radiated from both the front and the back sides, where luminance on the back was ~30% higher than that on the front in our experiments. For the other case, however, light was emitted only from the cathode back side as the Cr layer on the anode glass rolled as a reflecting mirror, improving the light luminance as much as ~60% compared with that on the front of one. This study seems to be discussed about the morphologies and field emission characteristics of CNT emitters according to the experimental parameters in fabricating the lamps emitting light on the both sides or only on the cathode back side. The experimental procedures are as follows. First, a CNT aqueous solution was prepared by ultrasonically dispersing purified SWCNTs in deionized water with sodium dodecyl sulfate (SDS). A milliliter or even several tens of micro-liters of CNT solution was deposited onto a porous alumina membrane through vacuum filtration. Thereafter, the alumina membrane was solvated with the 3 M NaOH solution and the floating CNT film was easily transferred to an ITO glass substrate. It is required for CNT film to make standing CNTs up to serve as electron emitter through an adhesive roller activation.

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Al-doped ZnO 박막의 기판 온도에 따른 전기적, 광학적 특성 (The Effect of Different Substrate Temperature on the Electrical Properties of Al-doped ZnO Thin Films)

  • 김봉석;김응권;이규일;오수영;송준태
    • 전기학회논문지
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    • 제56권10호
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    • pp.1782-1785
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    • 2007
  • In this paper, the effect of substrate temperature on structural, electrical and optical properties of aluminium-doped zinc oxide (AZO) films were investigated. AZO thin films were prepared on glass substrate by pulsed DC magnetron sputtering technique. The properties of AZO were measured by using XRD, AFM, UV spectrophotometer, and hall effect measurement system. The resistivity of AZO films was improved under the condition of high substrate temperature. The resistivity decreased from $9.95{\times}10^{-2}\;{\Omega}-cm\;to\;1.1{\times}10^{-3}\;{\Omega}-cm$ as a result of high substrate temperature and the average transmittances in visible range were above 80%.

Substrate Temperature Effects on Structural and Optical Properties of RF Sputtered CdS Thin Films

  • 황동현;최정규;손영국
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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    • pp.218.2-218.2
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    • 2013
  • In this study, CdS thin films were deposited onto glass substrates by radio frequency magnetron sputtering. The films were grown at various substrate temperatures in the range of 100 to $250^{\circ}C$. The effects of substrate temperatures on the structural and optical properties were examined. The XRD analysis revealed that CdS films were polycrystalline and retained the mixed structure of hexagonal wurtzite and cubic phase. The percentages of hexagonal structured crystallites in the films were seen to be increased by increasing substrate temperatures. The film grown at $250^{\circ}C$ showed a relatively high transmittance of 80% in the visible region, with an energy band gap of 2.45 eV. The transmittance date analysis indicated that the optical band gap was closely related to the substrate temperatures.

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스퍼터링 질화탄소 박막의 트라이볼로지 및 전기적 특성의 기판 온도 영향 (The Effect of Substrate Temperature on Tribological and Electrical Properties of Sputtered Carbon Nitride Thin Film)

  • 박찬일
    • 한국전기전자재료학회논문지
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    • 제34권1호
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    • pp.33-38
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    • 2021
  • Using facing target magnetron sputtering (FTMS) with a graphite target source, carbon nitride thin films were deposited on silicon and glass substrates at different substrate temperatures to confirm the tribological, electrical, and structural properties of thin films. The substrate temperatures were room temperature, 150℃, and 300℃. The tribology and electrical properties of the carbon nitride thin films were measured as the substrate temperature increased, and a study on the relation between these results and structural properties was conducted. The results show that the increase in the substrate temperature during the fabrication of the carbon nitride thin films increased the hardness and elastic modulus values, the critical load value was increased, and the residual stress value was reduced. Moreover, the increase in the substrate temperature during thin-film deposition was attributed to the improvement in the electrical properties of carbon nitride thin film.

Glass Remote Phosphor 구조를 갖는 백색 LED 패키지의 형광체 함량과 열처리 온도 최적화 (Optimization of Phosphor Contents and Heat-treatment Temperature in White LED Package with Glass Remote Phosphor Structure)

  • 정희석;홍석기;염정덕
    • 조명전기설비학회논문지
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    • 제30권3호
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    • pp.30-38
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    • 2016
  • In this research, a 6W white LED package with a Glass Remote Phosphor was developed to improve the life of an LED package. The Glass Remote Phosphor was fabricated by the Phosphor in Glass (PiG) method, wherein phosphor YAG:Ce was mixed with glass frit and then heat treated. A paste with 75wt.% of a phosphor substance and 25wt.% glass frit was coated on a glass substrate two times using the screen-printing technique and heat-treated at $800^{\circ}C$ ; this structure gave a luminous efficacy of 136.1lm/W, color rendering index of 74Ra, and color temperature of 5,342K, thus satisfying the requirements as a light source for lighting. Moreover, an IES LM-80 accelerated life test was conducted on the same LED package for 6,000h in order to estimate the L70 lifetime based on IES TM-21. The results showed guaranteed lifetimes of 213,000h at $55^{\circ}C$, 245,000h at $85^{\circ}C$, and 209,000h at $95^{\circ}C$.

전도성 실버 페이스트의 미세구조 발달에 미치는 glass-frit 크기의 영향 (Influence of Glass-Frit Size on the Microstructural Evolution of Conductive Silver Paste)

  • 한현근;서동석;이종국
    • 대한금속재료학회지
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    • 제46권8호
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    • pp.516-523
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    • 2008
  • The effect of glass-frit size on microstructural evolution and electrical resistance of conductive silver paste was investigated. Silver paste was prepared by mixing 70 wt% commercial silver powder with $1.6{\mu}m$, 3 wt% Bi based glass-frit and 27 wt% organic vehicle. Two different sizes of glass-frit were obtained by ball-milling of commercial glass-frit ($3{\mu}m$) for 3 and 5 days, which had an average particle size of 1.0 and $0.5{\mu}m$. The smaller glass-frit was melt at low sintered temperature and rapidly spread between the silver particles, which is induced the dense networking among silver particles and strong adhesiveness to $Al_2O_3$ substrate. The silver film with smaller glass-frit sintered at $500^{\circ}C$ showed the small pore size and low porosity resulting in low electrical resistivity of $4{\mu}{\Omega}cm$.

ANODICALLY-BONDED INTERFACE OF GLASS TO ALUMINIUM

  • Takahashi, Makoto;Nishikawa, Satoru;Chen, Zheng;Ikeuchi, Kenji
    • 대한용접접합학회:학술대회논문집
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    • 대한용접접합학회 2002년도 Proceedings of the International Welding/Joining Conference-Korea
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    • pp.65-69
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    • 2002
  • An Al film deposited on the Kovar alloy substrate was anodically-bonded to the borosilicate glass, and the bond interfaces was closely investigated by transmission electron microscopy. Al oxide was found to form a layer ~l0 nm thick at the bond interface, and fibrous structure of the same oxide was found to grow epitaxially in the glass from the oxide layer. The fibrous structure grew with the bonding time. The mechanism of the formation of this fibrous structure is proposed on the basis of the migration of Al ions under the electric field. Penetration of Al into glass beyond the interfacial Al oxide was not detected. The comparison of the amount of excess oxygen ions generated in the alkali depletion layer with that incorporated in the Al oxide suggests that the growth of the alkali-ion depletion layer is controlled by the consumption of excess oxygen to form the interfacial Al oxide.

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Ambient Pressure Dried Silica Aerogel Thin Film from Water Glass

  • Cha, Young-Chul;Yoon, Jong-Seol;Lee, Jun;Hwang, Hae-Jin;Moon, Ji-Woong
    • 한국세라믹학회지
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    • 제45권2호
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    • pp.87-89
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    • 2008
  • A nano structured silica aerogel thin film was manufactured from inexpensive sodium silicate (water glass) using an ambient pressure drying method. High purity silicic sol was prepared by passing a water glass solution through an ion exchange resin, and the gel films were prepared on a modified glass substrate via dip coating. The dip coating conditions, such as coating time and solvent, were optimized. The optical and physical properties of the obtained silica aerogel thin film were characterized using a UV-visable spectrometer and a scanning electron microscope.

New Glass Ceramics for Hard Disk Substrates with Improved Surface Flatness

  • Utsuno, Futoshi;Yamada, Yusuke;Takeya, Huminori;Yasui, Itaru
    • The Korean Journal of Ceramics
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    • 제5권4호
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    • pp.363-367
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    • 1999
  • New glass ceramics were investigated for the application as substrates to be used in hard disk devices. The glass system to precipitate lithium di-silicate was studied so as to optimize the composition to realize very high surface flatness. The addition of small amount of several metal oxides with high valences had very drastic effects on the microstructure, because they played a role of crystallization agents, and consequently it determined surface flatness even after the polishing process. The possible mechanism changes of crystal growth due to the addition of metal oxides were discussed in relation to the final micro-texture development. The glass ceramics with very high surface flatness(Ra=7.1 $\AA$) was obtained by the addition of the mixture of $P-2O_5 \;and \;MoO_3$ as crystallization agents.

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