• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.1229-1232
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• 2005

We report the method of preventing the grey color of Bi based glass frits caused by reduction of $Bi_2O_3$. To prevent reduction of $Bi_2O_3$, we controlled the melting temperature. Low melting temperature reduces the reduction of $Bi_2O_3$ and that makes clarity transparent glass cullets. After firing, glass frits that melted at lower temperature showed better transparency. To prevent the browning, we used some additives like CuO, $CeO_2$, CoO and $TiO_2$. The colors of glass cullets were varied according to additives. After firing, dielectric layer contained additives showed better transparency than the one without additives. In the point of reaction between dielectric layer and Ag electrode, CuO was the most effective additive in preventing the yellowing.

• Proceedings of the KSME Conference
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• 2007.05a
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• pp.215-219
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• 2007

In this work, the indium zinc oxide (IZO) films had been deposited on the glass substrate coated with the SiO film. Based on a comparative investigation of the IZO monolayer and IZO/SiO multilayer, it is shown that the thickness of SiO film has a great effect on the mechanical properties of the thin films. The AFM images of the IZO thin film included the SiO film were shown smoother surfaces than monolayer. Resistivity was in inverse proportion to Mobility. If it deposited the SiO film on the substrate, the layer of change was generated between two layer(SiO and substrate). The layer of change influenced resistance because of oxygen content was more than the IZO monolayer.

• 한국신재생에너지학회:학술대회논문집
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• 2008.05a
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• pp.444-444
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• 2008

• Journal of the Korean institute of surface engineering
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• v.52 no.6
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• pp.310-315
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• 2019

The use of a silicon carbide (SiC)-based composite ceramic layer for the mold of a curved cover glass was demonstrated. The stress of SiC/VDR/graphite-based mold structure was evaluated via finite element analysis. The results revealed that the maximum tensile stress primarly occured at the edge region. Moreover, the stress can be reduced by employing a relatively thick SiC coating layer and, therefore, layers of various thicknesses were deposited by means of chemical vapor deposition. During growth of the layer, the orientation of the facets comprising the SiC grain became dominant with additional intense SiC(220) and SiC(004). However, the roughness of the SiC layer increased with increasing thickness of the layer and. Hence, the thickness of the SiC layer needs to be adjusted by values lower than the tolerance band of the curved cover glass mold.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.196.1-196.1
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• 2016

TCO(Transparent Conducting Oxide) on flat glass is used in thin-film photovoltaic cell, flat-panel display. Nowadays, Corning(R) Willow Glass(R), known as flexible substrate, has attracted much attention due to its many advantages such as reliable roll-to-roll glass processing, high-quality flexible electronic devices, high temperature process. Also, it can be an alternative to flexible polymer substrates which have their poor stability and degradation of electrical and optical qualities. For application on willow glass, the flexibility, electrical, optical properties can be greatly influenced by the TCO thin film thickness due to the inherent characterization of thin film in nanoscale. It can be expected that while thick TCO layer causes poor transparency, its sheet resistance become low. Also, rarely reports were focusing on the influence of flexible properties by varying TCO thickness on flexible glass. Therefore, it is very important to optimize TCO thickness on flexible Willow glass. In this study, Ti-ZnO thin films, with different thickness varied from 0 nm to 50 nm, were deposited on the flexible willow glass by atomic layer deposition (ALD). The flexible, electrical and optical properties were investigated, respectively. Also, these properties of Ti-doped ZnO thin films were compared with un-doped ZnO thin film. Based on the results, when Ti-ZnO thin films thickness increased, resistivity decreased and then saturated; transmittance decreased. The Figure of Merit (FoM) and flexibility was the highest when Ti-ZnO thickness was 40nm. The flexible, electrical and optical properties of Ti-ZnO thin films were better than ZnO thin film at the same thickness.

• Journal of the Microelectronics and Packaging Society
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• v.16 no.4
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• pp.17-22
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• 2009

Two different organic-inorganic hybrid thin film transistors (OITFTs) with the structures of glass/ITO/ZnO/PMMA/Al (staggered structure) and glass/ITO/PMMA/ZnO/Al (inverted staggered structure), were fabricated and their electrical and structural properties were compared. The ZnO thin films used as active channel layers were deposited by the atomic layer deposition (ALD) method at a temperature of $100^{\circ}C$. To investigate the effect of the substrates on their properties, the ZnO films were deposited on bare glass, PMMA/glass and ITO/glass substrates and their crystal properties and surface morphologies were analyzed. The structural properties of the ZnO films varied with the substrate conditions. The ZnO film deposited on the ITO/glass substrate showed better crystallinity and morphologies, such as a higher preferred c-axis orientation, lower FWHM value and larger particle size compared with the one deposited on the PMMA/glass substrate. The field effect mobility ($\mu$), threshold voltage ($V_T$) and $I_{on/off}$ switching ratio for the OITFT with the staggered structure were about $0.61\;cm^2/V{\cdot}s$, 5.5 V and $10^2$, whereas those of the OITFT with the inverted staggered structure were found to be $0.31\;cm^2/V{\cdot}s$, 6.8 V and 10, respectively. The improved electrical properties for the staggered OITFTs may originate from the improved crystal properties and larger particle size of the ZnO active layer.

• Journal of the Korean Ceramic Society
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• v.43 no.5 s.288
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• pp.277-283
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• 2006

A porous material with a surface layer was fabricated from glass abrasive sludge and expanding agents. The glass abrasive sludges were mixed with expanding agents and compacted into precursors. These precursors were sintered in the range of $700-900^{\circ}C$ for 20 min. The sintered porous materials had a surface layer with smaller pores and inner parts with larger pores. The surface layer and closed pores controlled water absorption. As the expanding agent fraction and the sintering temperature increased, the porosity and pore size increased. The porous materials with $Fe_2O_3$ and graphite as the expanding agents had a low absorption ratio of about 3% or lower while the porous material with $CaCO_3$ as the expanding agent had a higher absorption ratio and more open pores.

• Analytical Science and Technology
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• v.6 no.2
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• pp.239-246
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• 1993

The structure of $(BaSr)TiO_3$ thin film deposited on ITO coated glass, bare glass and (100) Si substrates was not changed, but the crystallinity was improved by the polycrystalline ITO layer and (100) Si substrate. The composition of $(BaSr)TiO_3$ thin film deposited on ITO coated glass was nearly stoichiometric ((Ba+Sr)/Ti=1.08~1.09) and very uniform through all deposition process. But as the deposition temperature increases, the interdiffusion between grown thin film and ITO layer and between ITO layer and base glass is severer. $(BaSr)TiO_3$ thin film deposited on ITO coated glass substrate was highly transparent. The refractive index($n_f$) of $(BaSr)TiO_3$ thin film deposited on ITO coated glass was 2.138~2.286 as a function of substrate temperature.

• Journal of the Korean Ceramic Society
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• v.38 no.11
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• pp.1000-1007
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• 2001

In an evacuated tube solar collector, the stable sealing of the heat pipe to the glass tube is important for the collector to use for a long period of time. The sealing of copper tube to the glass is quite difficult because of the large differences in the physical and chemical properties of the two materials. In this study, therefore, a proper copper oxide layer was induced to improve the chemical bonding of the two materials, and the oxidation state of copper and the interface between copper and glass were examined by XRD, SEM and EDS. Its bonding strength was also measured. Cu$_2$O was formed when the bare copper was heat-treated under 600$^{\circ}C$, while CuO oxide layer was formed above that temperature. The bonding state of CuO to the copper was very poor. The borate treatment of the copper, however, extend the stable forming of Cu$_2$O layer to 800$^{\circ}C$. Borosilicate glass tube was sealed to a copper tube by Housekeeper method only when the sealing part was covered with Cu$_2$O layer. The bonding strength at the interface was measured 354.4N, its thermal shock resistance was acceptable.

• Korean Journal of Metals and Materials
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• v.50 no.8
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• pp.557-562
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• 2012

Self-organized ruthenium (Ru) dots were fabricated by $400^{\circ}C$ RTA (rapid thermal annealing) and ALD (atomic layer deposition). The dots were produced under the $400^{\circ}C$ RTA conditions for 10, 30 and 60 seconds on all Si(100)/200 nm-SiO2, glass, and glass/fluorine-doped tin oxide (FTO) substrates. Electrical sheet resistance, and surface microstructure were examined using a 4-point probe and FE-SEM (field emission scanning electron microscopy). Ru dots were observed when a 30 nm-Ru layer on a Si(100)/200 nm-SiO2 substrate was annealed for 10, 30 and 60 seconds, whereas the dots were only observed on a glass substrate when a 50 nm-Ru layer was annealed on glass. For a glass/FTO substrate, RTA <30 seconds was needed for 30 nm Ru thick films. Those dots can increase the effective surface area for silicon and glass substrates by up to 5-44%, and by 300% for the FTO substrate with a < $20^{\circ}$ wetting angle.