• Title/Summary/Keyword: Glass etching

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ETCHING CHARACTERISTICS OF MAGNETIC THIN FILMS BY ION BEAM TECHNIQUE

  • Lee, H.C.;Kim, S.D.;Lim, S.H.;Han, S.H.;Kim, H.J.;Kang, I.K.
    • Journal of the Korean Magnetics Society
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    • v.5 no.5
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    • pp.538-542
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    • 1995
  • The etching characteristics of magnetic thin films of permalloy and Fe-based alloys are investigated. The thin films are fabricated by rf magnetron sputtering and the substrates used are silicon and glass. Etching is done by ion beam technique and the main process parameters investigated are beam voltage, beam current and accelerating voltage. The etch rate of the magnetic films is proportional to the beam current, but it is not directly related to the accelerating voltage and beam voltage. The dependence of etch rate on the process parameters can be explained by ion current density. It is found that the ion beam etching is effective in obtaining well-developed micro-patterns on the permalloy and Fe- based magnetic thin films.

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Etching Characteristics of Micro Blaster for MEMS Applications (MEMS 공정에 적용하기 위한 마이크로 블라스터 식각 특성)

  • Cho, Chan-Seob;Bae, Ig-Soon;Lee, Jong-Hyun
    • Journal of Sensor Science and Technology
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    • v.20 no.3
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    • pp.187-192
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    • 2011
  • Abrasive blaster is similar to sand blaster, and effectively removes hard and brittle materials. Exiting abrasive blaster has applied to rough working such as deburring and rough finishing. As the need for machining of ceramics, semiconductor, electronic devices and LCD are increasing, micro abrasive blaster was developed, and became the inevitable technique to micromachining. This paper describes the performance of the micro blaster in MEMS process of glass and succeed in domestically producing complete micro blaster. Diameter of hole and width of line in this etching is 100 ${\mu}m$ ~ 1000 ${\mu}m$. Experimental results showed good performance in micro channel and hole in glass wafer. Therefore, this micro blaster could be effectively applied to the micro machining of semiconductor, micro PCR chip.

Fabrication of a Bottom Electrode for a Nano-scale Beam Resonator Using Backside Exposure with a Self-aligned Metal Mask

  • Lee, Yong-Seok;Jang, Yun-Ho;Bang, Yong-Seung;Kim, Jung-Mu;Kim, Jong-Man;Kim, Yong-Kweon
    • Journal of Electrical Engineering and Technology
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    • v.4 no.4
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    • pp.546-551
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    • 2009
  • In this paper, we describe a self-aligned fabrication method for a nano-patterned bottom electrode using flood exposure from the backside. Misalignments between layers could cause the final devices to fail after the fabrication of the nano-scale bottom electrodes. A self-alignment was exploited to embed the bottom electrode inside the glass substrate. Aluminum patterns act as a dry etching mask to fabricate glass trenches as well as a self-aligned photomask during the flood exposure from the backside. The patterned photoresist (PR) has a negative sidewall slope using the flood exposure. The sidewall slopes of the glass trench and the patterned PR were $54.00^{\circ}$ and $63.47^{\circ}$, respectively. The negative sidewall enables an embedment of a gold layer inside $0.7{\mu}m$ wide glass trenches. Gold residues on the trench edges were removed by the additional flood exposure with wet etching. The sidewall slopes of the patterned PR are related to the slopes of the glass trenches. Nano-scale bottom electrodes inside the glass trenches will be used in beam resonators operating at high resonant frequencies.

Novel Deposition Technique of ZnO:Al Transparent Conduction Oxide Layer on Chemically Etched Glass Substrates for High-haze Textured Surface

  • Park, Hyeongsik;Pak, Jeong-Hyeok;Shin, Myunghoon;Bong, Sungjae;Yi, Junsin
    • Proceedings of the Korean Vacuum Society Conference
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    • 2014.02a
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    • pp.426.1-426.1
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    • 2014
  • For high performance thin film solar cells, texturing surface, enhancing the optical absorptionpath, is pretty important. Textured ZnO:Al transparent oxide layer of high haze is commonly used in Si thin film solar cells. In this paper, novel deposition method for aluminum doped zinc oxide (ZnO:Al) on glass substrates is presented to improve the haze property. The broccoli structure of ZnO:Al layer was formed on chemically etched glass substrates, which showed high haze value on a wide wavelength range.The etching condition of the glass substrates can change not only the haze values of the ZnO:Al of in-situ growth but alsothe electrical and optical properties of the deposited ZnO:Al films.The etching mechanism of the glass substrate affecting on the surface morphology of the glass will be discussed, which resulted in variation of texture of ZnO:Al layer. The optical properties of substrate morphology were also analyzed with EDS and FTIR results. As a result, the high haze value of 85.4% was obtained in the wavelength range of 300 nm to 1100 nm. Furthermore, low sheet resistance of about 5~18 ohm/sq was achieved for different surface morphologies of the ZnO:Al films.

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Dependence of cation ratio in Oxynitride Glasses on the plasma etching rate

  • Lee, Jung-Ki;Hwang, Seong-Jin;Lee, Sung-Min;Kim, Hyung-Sun
    • Proceedings of the Materials Research Society of Korea Conference
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    • 2009.11a
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    • pp.44.2-44.2
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    • 2009
  • Polycrystalline materials suchas yttria and alumina have been applied as a plasma resisting material for the plasma processing chamber. However, polycrystal line material may easily generate particles and the particles are sources of contamination during the plasma enhanced process. Amorphous material can be suitable to prevent particle generation due to absence of grain-boundaries. We manufactured nitrogen-containing $SiO_2-Al_2O_3-Y_2O_3$ based glasses with various contents of silicon and fixed nitrogen content. The thermal properties, mechanical properties and plasma etching rate were evaluated and compared for the different composition samples. The plasma etching behavior was estimated using XPS with depth profiling. From the result, the plasma etching rate highly depends on the silicon content and it may results from very low volatile temperature of SiF4 generated during plasma etching. The silicon concentration at the plasma etched surface was very low besides the concentration of yttrium and aluminum was relatively high than that of silicon due to high volatile temperature of fluorine compounds which consisted with aluminum and yttrium. Therefore, we conclude that the samples having low silicon content should be considered to obtain low plasma etching rate for the plasma resisting material.

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A Study on the Characteristics Improvement of Dye-Sensitive Solar Cells Using Glass Surface Etching (유리 표면 Etching을 이용한 염료감응 태양전지의 특성 개선 연구)

  • Kim, Haemaro;Lee, Don-Kyu
    • Journal of IKEEE
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    • v.25 no.1
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    • pp.128-132
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    • 2021
  • In this paper, the surface of electrodes used in solar cells was roughened using wet etching method among surface texturing method, and after surface treatment, dye sensitive solar cell using TiO2 oxide semiconductor was produced. The surface spectroscopic properties of surface treated electrodes were analyzed according to etching time, and by evaluating the electrical properties of TiO2 dye-sensitized solar cells produced according to etching time, the study on improving the efficiency of solar cells according to surface treatment was conducted. As a result, solar cells that etched the electrode surface for 10 minutes could see an improvement of about 27.46[%] over their existing efficiency.

Wafer-level Fabrication of Ball Lens by Cross-cut and Reflow of Wafer-bonded Glass on Silicon

  • Lee, Dong-Whan;Oh, Jin-Kyung;Choi, Jun-Seok;Lee, Hyung-Jong;Chung, Woo-Nam
    • Journal of the Optical Society of Korea
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    • v.14 no.2
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    • pp.163-169
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    • 2010
  • Novel wafer-level fabrication of a glass ball-lens is realized for optoelectronic applications. A Pyrex wafer is bonded to a silicon wafer and cross-cut into a square-tile pattern, followed by wet-etching of the underlying silicon. Cubes of Pyrex on the undercut silicon are then turned into ball shapes by thermal reflow, and separated from the wafer by further etching of the silicon support. Radial variation and surface roughness are measured to be less than ${\pm}3\;{\mu}m$ and ${\pm}1\;nm$, respectively, for ball diameter of about $500\;{\mu}m$. A surface defect on the ball that is due to the silicon support is shown to be healed by using a silicon-optical-bench. Optical power-relay of the ball lens showed the maximum efficiency of 65% between two single-mode fibers on the silicon-optical-bench.

Evaluation of micro-channel characteristics of fused silica glass using powder blasting (Powder blasting을 이용한 Fused silica glass의 마이크로 채널 가공 및 특성 평가에 관한 연구)

  • Lee, Jung-Won;Kim, Tae-Min;Shin, Bong-Cheol
    • Design & Manufacturing
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    • v.14 no.1
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    • pp.36-41
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    • 2020
  • Recently, due to the development of MEMS technology, researches for the production of effective micro structures and shapes have been actively conducted. However, the process technology based on chemical etching has a number of problems such as environmental pollution and time problems due to multi-process. Various processes to cope with this process are being studied, and one of the mechanical etching processes is the powder blasting process. This process is a method of spraying fine particles, which has the advantage of being an effective process in manufacturing hard brittle materials. However, it is also a process that adversely affects the material surface roughness and material properties due to the impact of the injection of fine particles. In this study, after fabricating micro-channels in fused silica glass with excellent optical properties among the hard brittle materials, we used the nano indentation system to analyze the micro parts using nano-particles as well as machinability and surface roughness analysis of the processed surface. The analysis was performed for the effective processing of powder blasting.

Growth and Characterization of Vertically well Aligned Crbon Nanotubes on Glass Substrate by Plasma Enhanced Hot Filament Chemical Vapor deposition

  • Park, Chong-Yun;Yoo, Ji-Beom
    • Proceedings of the Korean Vacuum Society Conference
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    • 2000.02a
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    • pp.210-210
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    • 2000
  • Vertically well aligned multi-wall carbon nanotubes (CNT) were grown on nickel coated glass substrates by plasma enhanced hot filament chemical vapor deposition at low temperatures below 600$^{\circ}C$. Acetylene and ammonia gas were used as the carbon source and a catalyst. Effects of growth parameters such as pre-treatment of substrate, plasma intensity, filament current, imput gas flow rate, gas composition, substrate temperature and different substrates on the growth characteristics of CNT were systematically investigated. Figure 1 shows SEM image of CNT grown on Ni coated glass substrate. Diameter of nanotube was 30 to 100nm depending on the growth condition. The diameter of CNT decreased and density of CNT increased as NH3 etching time etching time increased. Plasma intensity was found to be the most critical parameter to determine the growth of CNT. CNT was not grown at the plasma intensity lower than 500V. Growth of CNT without filament current was observed. Raman spectroscopy showed the C-C tangential stretching mode at 1592 cm1 as well as D line at 1366 cm-1. From the microanalysis using HRTEM, nickel cap was observed on the top of the grown CNT and very thin carbon amorphous layer of 5nm was found on the nickel cap. Current-voltage characteristics using STM showed about 34nA of current at the applied voltage of 1 volt. Electron emission from the vertically well aligned CNT was obtained using phosphor anode with onset electric field of 1.5C/um.

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Surface Analysis of Fluorine-Plasma Etched Y-Si-Al-O-N Oxynitride Glasses

  • Lee, Jung-Ki;Hwang, Seong-Jin;Lee, Sung-Min;Kim, Hyung-Sun
    • Proceedings of the Materials Research Society of Korea Conference
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    • 2009.05a
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    • pp.38.1-38.1
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    • 2009
  • Plasma etching is an essential process for electronic device industries and the particulate contamination during plasma etching has been interested as a big issue for the yield of productivity. The oxynitride glasses have a merit to prevent particulate contamination due to their amorphous structure and plasma etching resistance. The YSiAlON oxynitride glasses with increasing nitrogen content were manufactured. Each oxynitride glasses were fluorine-plasma etched and their plasma etching rate and surface roughness were compared with reference materials such as sapphire, alumina and quartz. The reinforcement mechanism of plasma etching resistance of the YSiAlON glasses studied by depth profiling at plasma etched surface using electron spectroscopy for chemical analysis. The plasma etching rate decreased with nitrogen content and there was no selective etching at the plasma etched surface of the oxynitride glasses. The concentration of silicon was very low due to the generation of SiF4 very volatile byproduct and the concentration of aluminum and yttrium was relatively constant. The elimination of silicon atoms during plasma etching was reduced with increasing nitrogen content because the content of the nitrogen was constant. And besides, the concentration of oxygen was very low on the plasma etched surface. From the study, the plasma etching resistance of the glasses may be improved by the generation of nitrogen related structural groups and those are proved by chemical composition analysis at plasma etched surface of the YSiAlON oxynitride glasses.

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