• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.366-369
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• 2002

At present, the study of direct digital X-ray detector and indirect digital X-ray detector proceed actively. But it needs high thickness and high voltage in selenium for high ionization rate. Therefore, we carried out the study of electric characteristics of a-Se with additive ratio of Iodine in drafting study for developing Hybrid X -ray Sensor for complementing direct digital X -ray detector and indirect digital X-ray detector in this paper. On this, there are formed Amorphous selenium multi-layers by sticking phosphor layer$(Gd_{2}O_{2}S(Eu^{2+}))$ using optical adhesives of EFIRON Co. Amorphous selenium multi-layers having dielectric layer(parylene) has characteristics of low dark-current, high X-ray sensitivity. So we can acquired a enhanced signal to noise ratio. We make Amorphous selenium multi-layers with $30{\mu}m$ thickness on glass.

• Proceedings of the Korea Institute of Applied Superconductivity and Cryogenics Conference
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• 2003.10a
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• pp.226-229
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• 2003

Following the successful development of practical high temperature superconducting (HTS) wires, there has been renewed activity in the development of superconducting power equipments. HTS equipments must be operated in the coolant, such as liquid nitrogen (L$N_2$) or cooled by cooler, such as GM-cryocooler to maintain the temperature below critical temperature. In this paper, dielectric strength of some insulating materials, such as epoxy, teflon, and glass fiber reinforced plastic (GFRP) in L$N_2$was measured. Surface breakdown voltage of GFRP which is basic property in design of HTS solenoid coil was measured. Epoxy is a goof insulating material but it is fragile at cryogenic temperature. The multi-layer insulating method of current lead is suggested to compensate this fragile property. It consists of teflon tape layer and epoxy layer fixed with texture. Based on these measurements, the 6.6㎸ class HTS magnet for DC reactor type high-T$_{c}$ superconducting fault current limiter (SFCL) was successfully fabricated and tested.d.

• Journal of the Korean Institute of Telematics and Electronics
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• v.22 no.2
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• pp.90-96
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• 1985

The properties of plasma-enhanced CVD phosphorous silicate glass (PECVD PSG) for passivation layer are studied . Phosphorous contentration was analyzed with X-ray fluores-cence. As a result, PECVD PSG has a limiting phosphors concentration of about 8 mole%. Curves relating to etcll rate, infrared absorption ratio, and sheet resistivity were adapted to monitor phosphorous concentration indirectly Dielectric properties, step coverage, crack resistance, and gettering effect are discussed in both of atmospheric pressure CVD (APCVO) and PECVD oxide. PECVD SiO2 film have density of about 2.4 g/㎤ at deposition rate of 450$\AA$/min, refractive index of about 1.53, and breakdown at fields of II-13 MV/cm. Crack resistance of PECVD oxide is greater than APCVD oxide. PECVD PSG films contained with 2 mole % phosphorous show good step coverage and gettering ability. The obtained results show more advantages in PECVD PSG than in APCVD PSG for device passivation.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.06a
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• pp.391-394
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• 1998

Electroluminescence is the light emission obtained by an electrical excitation energy passing through a phosphor under an applied high electrical field. EL are paid much attention on flat panel display as a backlight and indicator, which are divided into ACPRL(alternating-current powder electroluminescent) and ACTFEL(alternating-current powder electroluminescent). In this paper, Electric and emission properties on ACPEL are investigated based on ZnS:Cu phosphor. The basic structure on this is ITO glass/phosphor/insulator/ backelectrode, CR-M which has high efficiency on thermal properties and dielectric Properties was introduced and BaTiO$_3$ as a insulating layer in order to increase app1ied electric field on phosphor. Changing on Dielectric and emission Properties was caused by a different viscosity of binder which filled on space between phosphor particle. 60cd/$m^2$ under 60V, 2kHz sinusoidal was gotten from ACPELD prepared in this work.

• Journal of the Microelectronics and Packaging Society
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• v.24 no.4
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• pp.39-46
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• 2017

This paper presents the fabrication of ceramic insulation layer on metallic heat spreading substrate, i.e. an insulated metal substrate, for planar type heater. Aluminum alloy substrate is preferred as a heat spreading panel due to its high thermal conductivity, machinability and the light weight for the planar type heater which is used at the thermal treatment process of semiconductor device and display component manufacturing. An insulating layer made of ceramic dielectric film that is stable at high temperature has to be coated on the metallic substrate to form a heating element circuit. Two technical issues are raised at the forming of ceramic insulation layer on the metallic substrate; one is delamination and crack between metal and ceramic interface due to their large differences in thermal expansion coefficient, and the other is electrical breakdown due to intrinsic weakness in dielectric or structural defects. In this work, to overcome those problem, selected metal oxide buffer layers were introduced between metal and ceramic layer for mechanical matching, enhancing the adhesion strength, and multi-coating method was applied to improve the film quality and the dielectric breakdown property.

• Journal of the Microelectronics and Packaging Society
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• v.11 no.3 s.32
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• pp.77-82
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• 2004

In this paper, warpages of heterogeneous LTCC substrates comprised of high K/low K hi-layered structure were investigated. The effect of glass content in high K LTCC layer on the warpage of substrate during co-firing process was examined. Shrinkage and dielectric properties of high K and low K green sheets were measured. In-situ camber observation by hot stage microscopy showed different camber development of heterogeneous LTCC substrates according to glass content in high K green sheet. High K green sheet containing $50\%$ glass was matched to low K green sheet in the shrinkage. Therefore, LTCC substrate of Low K/High K+$50\%$ glass structure showed flat surface after sintering.

• Korean Journal of Optics and Photonics
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• v.19 no.4
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• pp.249-254
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• 2008

We developed a new x-ray image sensor utilizing a reflection-mode liquid crystal panel as its sensitive element, and tested its functionality by using it to obtain an x-ray image of a printed circuit board. In the liquid crystal x-ray image sensors hitherto reported, the liquid crystal layer is in direct contact with the photoconductive film which is deposited on a glass substrate. In the fabrication of the new x-ray image sensor, a liquid crystal panel is fabricated in the first step by using a pair of glass plates of a few centimeters thicknrss. Then one of the glass substrates is ground until its thickness is reduced to about $60\;{\mu}m$. After polishing the glass plate, dielectric films for high reflectance at 630 nm, a film of amorphous selenium for photoconduction, and a transparent conductive film for electrode are deposited in sequence. The new x-ray image sensor has several merits: primarily, fabrication of a large area sensor is more easily compared with the old fashioned x-ray image sensors. Since the reflection type liquid crystal panel has a very steep response curve, the new x-ray sensor has much more sensitivity to x-rays compared with the conventional x-ray area sensor, and the radiation dosage can be reduced down to less then 20%. By combining the new x-ray sensor with CCD camera technology, real-time x-ray images can be easily captured. We report the structure, fabrication process and characteristics of the new x-ray image sensor.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.10 no.2
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• pp.140-144
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• 2000

($Pb_{0.91}$$La_{0.09}$)($Zr_{0.65}$$Ti_{0.35}$)$O_3$ thin films were prepared on ITO-coated glass by spin-coating. As $Pb_{0.9}$$La_{0.1}$)$TiO_3$ thin films were used as seeding layers, formation temperature of perovskite was reduced and theUrosette" structure was disappeared. PLZT thin films with a seeding layer of 40 nm thick showed a (100) preferred orientation and better dielectric and ferroelectric properties.ties.

• Journal of Information Display
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• v.8 no.4
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• pp.19-22
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• 2007

A new front plate structure of ac-PDP using fence-type aluminum electrode coated with anodic aluminum oxide was investigated. In this structure, ITO and glass dielectric layer were eliminated and expensive Ag BUS electrode was replaced with aluminum. Test panels were prepared using the new structure and their luminance and discharge characteristics were examined. These results indicate that the new structure provide a new way of cost reduction and enhancement of performance of ac-PDPs

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08a
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• pp.127-130
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• 2007

A new front plate structure of ac-PDP was explored using fence-type aluminum electrode coated with anodic aluminum oxide.[1] In this structure, ITO and glass dielectric layer were eliminated and expensive Ag BUS electrode was replaced with aluminum. Test panels were prepared using the new structure and their luminance and discharge characteristics were examined. These results indicate that the new structure provide a new way of cost reduction and enhancement of performance of ac-PDPs