• Transactions of the Korean Society of Automotive Engineers
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• v.16 no.5
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• pp.113-118
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• 2008

We have developed an integrated giant magneto resistance using not only circuit but also integrating technique with semiconductor for automobile application. It has four elements used for giant magneto resistance sensor. Ni-Fe/Cu multi layers were prepared on a glass substrate by magnetron sputtering. The dependence of magneto resistance on the thickness of the Ni-Fe and Cu layers was investigated. The MR ratio showed a saturated a peak at Cu layer $10{\AA}$, Ni-Fe layer $50{\AA}$, where the MR ratio is about 8.7% at room temperature. By means of Ni-Fe multi film and specific integrating technique, these new giant magneto resistance sensor showed excellent resistance characteristics.

• JSTS:Journal of Semiconductor Technology and Science
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• v.2 no.3
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• pp.197-204
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• 2002

DRAM, SRAM, and FLASH memory are three major memory devices currently used in most electronic applications. But, they have very distinct attributes, therefore, each memory could be used only for limited applications. MRAM (Magneto-resistive Random Access Memory) is a promising candidate for a universal memory that meets all application needs with non-volatile, fast operational speed, and low power consumption. The simplest architecture of MRAM cell is a series of MTJ (Magnetic Tunnel Junction) as a data storage part and MOS transistor as a data selection part. To be a commercially competitive memory device, scalability is an important factor as well. This paper is testing the actual electrical parameters and the scaling factors to limit MRAM technology in the semiconductor based memory device by an actual integration of MRAM core cell. Electrical tuning of MOS/MTJ, and control of resistance are important factors for data sensing, and control of magnetic switching for data writing.

• Proceedings of the IEEK Conference
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• 1999.06a
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• pp.950-953
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• 1999

Spin tunneling giant magnetoresistance effect was studied to utilize in the application of random access memory. Ferromagnetic/Insulator/Ferromagnetic films were sputtered on glass substrates and perpendicular current was applied. Measurements of magneto- resistance of the junction showed 8.6% of MR ratio. Voltage output depends on the magnetization directions of the write line and read line, thus enabling the system to be used as a random access memory

• Electrical & Electronic Materials
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• v.10 no.10
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• pp.1016-1021
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• 1997

Magneto resistance properties in spin-valve sandwiches with various thickness of nanmagnetic layer in contact with the ferromagnetic NiFe film were investigated. The NiFe layer in contact with the NiO film was pinned by strongly exchange-biased coupling and the free NiFe layer at the film surface induced a sharp change in the magnetoresistance at -5~15Oe due to small coercivity. The NiO/NiFe/Cu/NiFe film showed a magnetoresistance ratio in the range of 2.3~2.9% and a field sensitivity above 2.2%/Oe with various of nonmagnetic layer. The NiO/NiFe/Cu/NiFe film of the field sensitivity above 2.2%/Oe suggests stang possibility of magnetic sensor matter.

• Journal of the Korean Magnetics Society
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• v.18 no.4
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• pp.154-158
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• 2008

Magnetite($Fe_3O_4$) is currently one of key materials for applications in magnetic storage and many bioinspired applications because bulk $Fe_3O_4$ has a high Curie temperature($Tc={\sim}850K$) and nearly full spin polarization at room temperature(RT). In this work, $Fe_3O_4$ nanoparticles with different sizes of 12 to 15 nm were prepared in a well-controlled manner by a nonhydrolytic synthetic method. Here, we report the significant intergrain magneto-resistance(MR) of ${\sim}2%$ at RT in $Fe_3O_4$ nanoparticle pellets. The tunneling conductance was also investigated based on the Brinkman model, as well. Our results show clearly that the surface or interfacial property of the particles plays a crucial role in the MR effect.

• Proceedings of the Korean Magnestics Society Conference
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• 2002.12a
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• pp.76-77
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• 2002

최근 거대자기저항(Giant magneto resistance)과 성질상으로 닮고 spin-valve와 같은 작용을 하는 ferromagnet(FM)/semiconductor, magnetic semiconductor(MS)/semiconductor 등의 다층막이 만들어지고 있으며, 비자성반도체에 spin-injection을 통한 spin-dependent electronic devices의 제작을 위한 연구가 활발히 진행중이다. 이처럼 III-FM-V, II-FM-Ⅵ, IV-FM 구조의 자성반도체(Magnetic semiconductor)에 대한 연구는 자기적 요소에 기반을 둔 반도체로의 적용가능성을 보임으로 많은 주목을 끌고 있다. 우리가 선택한 MnGe이 다른 자성반도체에 대해 상대적으로 가지는 이점은 다음과 같다. (중략)

• Journal of Magnetics
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• v.7 no.3
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• pp.101-105
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• 2002

MRAM (Magnetoresistive Random Access Memory) is a promising candidate for a universal memory that meets all application needs with non-volatile, fast operational speed, and low power consumption. The simplest architecture of MRAM cell is a series of MTJ (Magnetic Tunnel Junction) as a data storage part and MOS transistor as a data selection part. This paper is for testing the actual electrical parameters to adopt MRAM technology in the semiconductor based memory device. The discussed topics are an actual integration of MRAM core cell and its properties such as electrical tuning of MOS/MTJ for data sensing and control of magnetic switching for data writing. It will be also tested that limits of the MRAM technology for a high density memory.

• Journal of the Korean institute of surface engineering
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• v.29 no.5
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• pp.459-466
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• 1996

A great amount of effort has been devoted to the constant improvement of such basic performance as dirvability, safety and enviromental protection. As a result, the total combination of various technologies has made it possible to produce safer and more comfortable automobiles. Among these technologies, plasma and thin film techniques are mainly cocerned with sensors, optics, electronics and surface modification. This paper first describes a concept of thin film processing in materials synthesis for sensors based on particle-surface interaction during deposition to provide a long life sensor applicable to sutomobiles. Some examples of parctical application of thin films to sensors are then given. These include(1) a thin films strain gauge for gravity sensors, (2) a giant magneto resistance film for speen sensors, and (3) a Magneto-impedance sensors fordetection of low magnetic field. Further progress of sophisticated thin film technology must be considered in detail to explore advanced thin film materials science and to ensure the field reliability of future sensor devices for automobile.

• Journal of the Korean Society for Nondestructive Testing
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• v.36 no.6
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• pp.483-489
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• 2016

The typical methods used for inspecting ferromagnetic pipes include the ultrasonic testing (UT) contact method and the following non-contact methods: magnetic flux leakage (MFL), electromagnetic acoustic transducers (EMAT), and remote field eddy current testing (RFECT). Among these methods, the RFECT method has the advantage of being able to establish a system smaller than the diameter of a pipe. However, the method has several disadvantages as well, including different sensitivities and difficult-to-repair coil sensors which comprise its array system. Therefore, a giant magneto-resistance (GMR) sensor was applied to address these issues. The GMR sensor is small, easy to replace, and has uniform sensitivity. In this experiment, the GMR sensor was used to measure remote field and defect signal characteristics (in the axial and radial directions) in a ferromagnetic pipe. These characteristics were measured in an effort to investigate standard defects at changing depths within a pipe. The results show that the experiment successfully demonstrated the applicability of the GMR sensor to RFECT signal detection in ferromagnetic pipe.

• Journal of Magnetics
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• v.8 no.1
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• pp.24-31
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• 2003

The discoveries of antiferromagnetic coupling in Fe/Cr multilayers by Grunberg, the Giant Magneto Resistance by Fert and Grunberg and a large tunneling magnetoresistance at room temperature by Moodera have triggered enormous research on magnetic thin films and magnetoelectronic devices. Large opportunities are especially opened by the spin dependent tunneling resistance, where a strong dependence of the tunneling current on an external magnetic field can be found. We will briefly address important basic properties of these junctions like thermal, magnetic and dielectric stability and discuss scaling issues down to junction sizes below 0.01 $\mu\textrm{m}$$^2$with respect to single domain behavior, switching properties and edge coupling effects. The second part will give an overview on applications beyond the use of the tunneling elements as storage cells in MRAMs. This concerns mainly field programmable logic circuits, where we demonstrate the clocked operation of a programmed AND gate. The second 'unconventional' feature is the use as sensing elements in DNA or protein biochips, where molecules marked magnetically with commercial beads can be detected via the dipole stray field in a highly sensitive and relatively simple way.