• 한국결정학회지
• /
• 제16권2호
• /
• pp.128-137
• /
• 2005

졸-겔 형판 합성법으로 제조된 페롭스카이트 나노구조의 입자크기에 따른 상전이를 연구하였다. 타탄산납, $PbTiO_{3}$, 화합물의 나노구조는 출발물질인 티타늄 테트라부톡사이드($Ti(OBu)_{4}$)와 아세트산 납($Pb(OAc)_{2}-3H_{2}O$)을 선택된 용매에 녹이고, 산화 알루미늄 형판($AlO_{x}\;template$)을 이용한 졸-겔 합성과정으로 거쳐서 제조하였다. 이 때, 200-nm 직경의 세공을 가진 막($Whatman^{\circledr}\;anodisc\;membranes$)이 형판으로 이용되었다. 선구물질이 코팅된 형판을 공기 중에서 말린 후, $650^{\circ}C$에서 소결하고, 6M-NaOH 용액에서 형판을 제거하였다. $PbTiO_{3}$ 나노구조의 상전이는 DSC, DTA, 비선형 광학적 특성 등을 이용하여 조사하였다.

• Journal of Acupuncture Research
• /
• 제31권2호
• /
• pp.87-98
• /
• 2014

Objectives : We investigated whether snake venom toxin(SVT) from Vipera lebetina turanica sensitizes HT29 human epithelial colorectal cancer cells to tumor necrosis factor(TNF)-related apoptosis-inducing ligand(TRAIL) induced apoptosis in cancer cells. Methods : Cell viability assay was used to assess the inhibitory effect of TRAIL on cell growth of HT29 human colorectal cancer cells. And 6-diamidino-2-phenylindole(DAPI), terminal deoxynucleotidyl transferase mediated dUTP nick end labeling assay(TUNEL) staining assay were used to evaluate cell-apoptosis. Western blot analysis were conducted to observe apoptosis related proteins and death receptor. To assess whether the synergized inhibitory effect of SVT and TRAIL on reactive oxygen species(ROS) generation was reversed by strong anti-oxidative agent. Results : SVT with TRAIL inhibited HT29 cell growth different from TRAIL alone. Consistent with cell growth inhibition, the expression of TRAIL receptors; Expression of death receptor(DR)4 and DR5 was significantly increased and intrinsic pro-apoptotic cleaved caspase-3, -9 was subsequently increased together with increase of Bax/Bcl-2 ratio and extrinsic pro-apototic caspase-8 was also activated. In addition, the expression of anti-apoptotic survival proteins, a marker of TRAIL resistance(eg, cFLIP, survivin, X-linked inhibitor of apoptosis protein(XIAP) and Bcl-2) was suppressed by the combination treatment of SVT and TRAIL. Pretreatment with the ROS scavenger N-acetylcysteine abolished the SVT and TRAIL-induced upregulation of DR4 and DR5 expression and expression of the intrinsic pro-apoptotic caspase-3 and-9. Conclusion : The collective results suggest that SVT facilitates TRAIL-induced apoptosis in $HT_{29}$ human epithelial colorectal cancer cells through up-regulation of the TRAIL receptors; DR4 and DR5 and consecutive induction of bilateral apoptosis via regulating apoptosis related proteins.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
• /
• pp.441-442
• /
• 2012

SnNb2O6 nanoplates were prepared by a solvothermal synthesis with water and ethanol mixed solvent. For improvement of their properties, as-prepared SnNb2O6 nanoplates also were calcined. The prepared powder was characterized by X-ray diffraction (XRD), field emission scanning electron microscope (FESEM), Transmission electron microscope (TEM), UV-vis spectroscopy, Raman spectrometer, Brunauer-Emmett-Teller (BET). The calcined nanoplates have a smaller surface area than the as-prepared nanoplates have. Nevertheless, in the case of the optical absorption properties, the calcined nanoplates could absorb more photon energy, due to their smaller band gaps. The Raman analysis revealed that the Nb-O bond length in the calcined nanoplates was longer than that in the as-prepared nanoplate. The higher optical absorption capability of the calcined nanoplates was attributed to the local structure variation within them. Furthermore the high crystallinity of the calcined nanoplates is effective in improving the generation of charge carriers. So, It was found that the calcined nanoplates exhibited superior photocatalytic activity for the evolution of H2 from an aqueous methanol solution than the as-prepared nanoplates under UV and visible irradiation. Therefore, the enhanced photocatalytic activity of the calcined nanoplate powder for H2 evolution was mainly attributed to its high crystallinity and improved optical absorption property resulting from the variation of the crystal structure.

• 한국신재생에너지학회:학술대회논문집
• /
• 한국신재생에너지학회 2010년도 춘계학술대회 초록집
• /
• pp.237.1-237.1
• /
• 2010

Recent developments such as concern over global warming, depletion of fossil fuels and increase in energy demands by the increasing world population has eventually lead to mass production of electricity using renewable sources. Ocean contains energy in form of thermal energy and mechanical energy: thermal energy from solar radiation and mechanical energy from the waves and tides. The current paper looks at generating power using waves. The primary objective of the present study is to maximize the primary energy conversion (first stage conversion) of the base model by making some design changes. The model entire consisted of a numerical wave tank and the turbine section. The turbine section had three components; front guide nozzle, augmentation channel and the rear chamber. The augmentation channel further consisted of a front nozzle, rear nozzle and an internal fluid region representing the turbine housing. Different front guide nozzle configuration and rear chamber design were studied. As mentioned, a numerical wave tank was utilized to generate waves of desired properties and later the turbine section was integrated. The waves in the numerical wave tank were generated by a piston type wave maker which was located at the wave tank inlet. The inlet which was modeled as a plate wall which moved sinusoidally with the general function, $x=asin{\omega}t$. In addition to primary energy conversion, observation of flow characteristics, pressure and the velocity in the augmentation channel, rear chamber as well as the front guide nozzle are presented in the paper. The analysis was performed using the commercial code of the ANSYS-CFX. The base model recorded water power of 29.9 W. After making the changes, the best model obtained water power of 37.1 W which represents an increase of approximately 24% in water power and primary energy conversion.

• Corrosion Science and Technology
• /
• 제12권2호
• /
• pp.102-112
• /
• 2013

A very high-temperature gas reactor (VHTR) is one of the next generation nuclear reactors owing to its safety, high energy efficiency, and proliferation-resistance. Heat is transferred from the primary helium loop to the secondary helium loop through an intermediate heat exchanger (IHX). Under VHTR environment Alloy 617 is being considered a candidate Ni-based superalloy for the IHX of a VHTR, owing to its good creep resistance, phase stability and corrosion resistance at high temperature. In this study, high-temperature corrosion tests were carried out at 850 - $950^{\circ}C$ in air and impure helium environments. Alloy 617 specimens showed a parabolic oxidation behavior for all temperatures and environments. The activation energy for oxidation was 154 kJ/mol in helium environment, and 261 kJ/mol in an air environment. The scanning electron microscope (SEM) and energy-dispersive x-ray spectroscopy (EDS) results revealed that there were a Cr-rich surface oxide layer, Al-rich internal oxides and depletion of grain boundary carbide after corrosion test. The thickness and depths of degraded layers also showed a parabolic relationship with the time. A corrosion rate of $950^{\circ}C$ in impure helium was higher than that in an air environment, caused by difference in the outer oxide morphology.

• 정보과학회 논문지
• /
• 제43권5호
• /
• pp.524-530
• /
• 2016

기존보다 데이터를 빠르게 접근하기 위한 노력과 비-휘발성 메모리의 발전은 메모리 파일 시스템 연구에 큰 기여를 해왔다. 메모리 파일 시스템은 파일 입출력의 고성능을 위해서 기존에 사용하는 읽기-쓰기 입출력보다 오버헤드가 적은 메모리 맵 파일 입출력을 사용하도록 제안하고 있다. 하지만 메모리 맵 파일 입출력을 사용하게 되면서 페이지 테이블을 구축할 때 발생하는 오버헤드가 전체 입출력 성능의 큰 부분을 차지하게 되었다. 또한 같은 파일이 반복적으로 접근될 때마다 페이지 테이블을 매번 삭제하기 때문에, 오버헤드가 불필요하게 중복되어서 발생한다는 점을 발견했다. 본 논문이 제안하는 매핑 캐시는 이러한 중복되는 오버헤드를 제거하기 위해서, 매핑이 해제될 때 파일의 페이지 테이블을 제거하지 않고 저장하고 있다가 다시 접근될 때 이를 재활용할 수 있도록 고안한 기법이다. 매핑 캐시는 기존 파일 입출력 성능보다 2.8배, 그리고 웹서버 전체 성능보다 12% 향상을 보였다.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
• /
• pp.289.2-289.2
• /
• 2016

In-Ga-Zn-O(IGZO) receive great attention as a channel material for thin film transistors(TFTs) as next-generation display panel backplanes due to its superior electrical and physical properties such as a high mobility, low off-current, high sub-threshold slope, flexibility, and optical transparency. For the purpose of fabricating high performance IGZO TFTs, a thermal recovery process above a temperature of $300^{\circ}C$ is required for recovery or rearrangement of the ionic bonding structure. However diffused metal atoms from source/drain(S/D) electrodes increase the channel conductivity through the oxidation of diffused atoms and reduction of $In_2O_3$ during the thermal recovery process. Threshold voltage ($V_{TH}$) shift, one of the electrical instability, restricts actual applications of IGZO TFTs. Therefore, additional investigation of the electrical stability of IGZO TFTs is required. In this paper, we demonstrate the effect of Ti diffusion and modulation of interface traps by carrying out an annealing process on IGZO. In order to investigate the effect of diffused Ti atoms from the S/D electrode, we use secondary ion mass spectroscopy (SIMS), X-ray photoelectron spectroscopy, HSC chemistry simulation, and electrical measurements. By thermal annealing process, we demonstrate VTH shift as a function of the channel length and the gate stress. Furthermore, we enhance the electrical stability of the IGZO TFTs through a second thermal annealing process performed at temperature $50^{\circ}C$ lower than the first annealing step to diffuse Ti atoms in the lateral direction with minimal effects on the channel conductivity.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
• /
• pp.281.1-281.1
• /
• 2016

Transition metal dichalcogenides (TMDCs) are promising layered structure materials for next-generation nano electronic devices. Many investigation on the FET device using TMDCs channel material have been performed with some integrated approach. To use TMDCs for channel material of top-gate thin film transistor(TFT), the study on high-k dielectrics on TMDCs is necessary. However, uniform growth of atomic-layer-deposited high-k dielectric film on TMDCs is difficult, owing to the lack of dangling bonds and functional groups on TMDC's basal plane. We demonstrate the effect of remote oxygen plasma pretreatment of large area synthesized few-layer MoSe2 on the growth behavior of Al2O3, which were formed by atomic layer deposition (ALD) using tri-methylaluminum (TMA) metal precursors with water oxidant. We investigated uniformity of Al2O3 by Atomic force microscopy (AFM) and Scanning electron microscopy (SEM). Raman features of MoSe2 with remote plasma pretreatment time were obtained to confirm physical plasma damage. In addition, X-ray photoelectron spectroscopy (XPS) was measured to investigate the reaction between MoSe2 and oxygen atom after the remote O2 plasma pretreatment. Finally, we have uniform Al2O3 thin film on the MoSe2 by remote O2 plasma pretreatment before ALD. This study can provide interfacial engineering process to decrease the leakage current and to improve mobility of top-gate TFT much higher.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
• /
• pp.307.2-307.2
• /
• 2016

In this study, we synthesized Au nanoparticles (AuNPs) in polyacrylonitrile (PAN) thin films using a simple annealing process in the solid phase. The synthetic conditions were systematically controlled and optimized by varying the concentration of the Au salt solution and the annealing temperature. X-ray photoelectron spectroscopy (XPS) confirmed their chemical state, and transmission electron microscopy (TEM) verified the successful synthesis, size, and density of AuNPs. Au nanoparticles were generated from the thermal decomposition of the Au salt and stabilized during the cyclization of the PAN matrix. For actual device applications, previous synthetic techniques have required the synthesis of AuNPs in a liquid phase and an additional process to form the thin film layer, such as spin-coating, dip-coating, Langmuir-Blodgett, or high vacuum deposition. In contrast, our one-step synthesis could produce gold nanoparticles from the Au salt contained in a solid matrix with an easy heat treatment. The PAN:AuNPs composite was used as the charge trap layer of an organic nano-floating gate memory (ONFGM). The memory devices exhibited a high on/off ratio (over $10^6$), large hysteresis windows (76.7 V), and a stable endurance performance (>3000 cycles), indicating that our stabilized PAN:AuNPs composite film is a potential charge trap medium for next generation organic nano-floating gate memory transistors.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2009년도 하계학술대회 논문집
• /
• pp.104-104
• /
• 2009

Critical dimensions has rapidly shrunk to increase the degree of integration and to reduce the power consumption. However, it is accompanied with several problems like direct tunneling through the gate insulator layer and the low conductivity characteristic of poly-silicon. To cover these faults, the study of new materials is urgently needed. Recently, high dielectric materials like $Al_2O_3$, $ZrO_2$ and $HfO_2$ are being studied for equivalent oxide thickness (EOT). However, poly-silicon gate is not compatible with high-k materials for gate-insulator. To integrate high-k gate dielectric materials in nano-scale devices, metal gate electrodes are expected to be used in the future. Currently, metal gate electrode materials like TiN, TaN, and WN are being widely studied for next-generation nano-scale devices. The TaN gate electrode for metal/high-k gate stack is compatible with high-k materials. According to this trend, the study about dry etching technology of the TaN film is needed. In this study, we investigated the etch mechanism of the TaN thin film in an inductively coupled plasma (ICP) system with $O_2/BCl_3/Ar$ gas chemistry. The etch rates and selectivities of TaN thin films were investigated in terms of the gas mixing ratio, the RF power, the DC-bias voltage, and the process pressure. The characteristics of the plasma were estimated using optical emission spectroscopy (OES). The surface reactions after etching were investigated using X-ray photoelectron spectroscopy (XPS) and auger electron spectroscopy (AES).