Threshold voltage shift of solution processed InGaZnO thin film transistors with indium composition ratio (용액 공정으로 제작된 InGaZnO TFT의 인듐 조성비에 따른 문턱전압 변화)
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- Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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- 2010.06a
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- pp.3-3
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- 2010