• Elastomers and Composites
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• v.42 no.3
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• pp.137-142
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• 2007

In the performance test of polytetrafluoroethylene (PTFE) membrane, melting temperature and crystallinity were $344.1^{\circ}C$ and 42.5%, respectively, according to TGA and DSC analysis. These values were similar to those of commercially available GE Osmonics PTFE membrane. The average of pore size was observed $0.716{\mu}m$ and the average flow rate was 1.570 LMH. These are slightly higher values than those of GE Osmonics sample. The filtering efficiency rate was 30.5%.

• Proceedings of the KIEE Conference
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• 2007.07a
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• pp.1329-1330
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• 2007

Phase-change random access memory(PRAM) has many advantages compare with the existing memory. For example, fast programming speed, low programming voltage, high sensing margin, low power consume and long cyclability of read/write. Though it has many advantages, there are some points which must be improved. So, we invented and studied new constitution of $Ge_{1}Se_{1}Te_{2}$ chalcogenide material. Actually, the performance properties have been improved surprisingly. However, crystallization time was as long as ever for amorphization time. In this paper, we studied in order to make set operation time and reset operation voltage reduced. In the present work, by alloying Sb in $Ge_{1}Se_{1}Te_{2}$. we could confirm that improved its set operation time and reset operation voltage. As a result, the method of Sb-alloyed $Ge_{1}Se_{1}Te_{2}$ can be solution to decrease the set operation time and reset operation voltage.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.05a
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• pp.88-91
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• 2005

본 논문에서는 비정질 As-Ge-Se-S 박막의 에칭 레이트를 측정하였으며 As-Ge-Se-S 박막에 회절격자를 형성 시킨 후 선택적 에칭을 통한 엠보싱 홀로그램을 제작하였다. NaOH 수용액으로 0.26N, 0.33N, 0.40N 농도로 변화시키며 수행하였으며 에칭 시간에 따른 에칭되는 두께의 변화를 측정하였다. 에칭 레이트는 NaOH 용액의 농도가 0.26N, 0.33N, 0.40N 일 때 각각 $2.5{\AA}/s$, $3.3{\AA}/s$, $3.9{\AA}/s$ 였다. 또한 2차원 엠보싱 회절격자를 형성 시킨후 0.26N NaOH용액으로 60초간 선택적 에칭을 수행하여 AFM(Atomic Force Microscopy) 으로 측정한 결과 선명한 엠보싱 형태의 회절격자를 확인 할 수 있었다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.05a
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• pp.92-95
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• 2005

The silver photodoping effect in amorphous AsGeSeS chalcogenide thin films for holographic recording has been investigated using a HeNe laser ($\lambda$=632.8 nm). The chalcogenide films prepared in this work were thinner in comparison with the penetration depth of recording light ($d_p$=1.66 mm). The variation of the diffraction efficiency $(\eta)$ in amorphous chalcogende films exhibits a tendency, independently of the Ag photodoping. That is, n increases relatively rapidly at the beginning of the recording process, reaches the maximum $({\eta}_{max})$ and slowly decreases. In addition, the value of ${\eta}_{max}$ depends strongly on chalcogenide film thickness(d) and its peak among the films with d = 40, 80, 150, 300, and 633 nm is observed at d = 150 nm (approximately 1/2n), where n is refractive index of the chalcogenide (n=2.0). The ${\eta}$ is largely enhanced by Ag photodoping into the chalcogenides. In particular, the value of hmax in a bilayer of 10-nm-thick Ag/150-nm-thick AsGeSeS film is about 1.6%, which corresponds to ~20 times in comparison with that of the AsGeSeS film (without Ag).

• Horticultural Science & Technology
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• v.30 no.6
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• pp.718-724
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• 2012

Sugars play important roles in petal senescence of cut flowers. In the Expt. 1 of this study, the effects of different concentrations of glucose (60, 90, and $120g{\cdot}L^{-1}$) and sucrose (30, 60, and $90g{\cdot}L^{-1}$) application on the vase life, rate of flower diameter increase, rate of flower weight increase and ethylene production of cut tree peony (Paeonia suffruticosa 'Luoyang Hong') were evaluated. At the earlier stage, treatments of different concentrations of glucose and sucrose all retarded the process of flower opening and inhibited the increase of flower diameter and weight, while senescence of flowers fed with different concentrations of glucose was delayed at later stage. Flowers treated with $90g{\cdot}L^{-1}$ glucose displayed the longest vase life, which showed significant difference (P < 0.05) from those of flowers with the control and sucrose treatments. All treatments with glucose or sucrose not only retarded the decrease of flower diameter and weight, but also suppressed the ethylene production at the earlier stage and delayed the peak of ethylene evolution. In order to study the effect of exogenous sugar on the postharvest response of cut tree peony to ethylene, Expt. 2 was conducted. Cut flowers were treated with $90g{\cdot}L^{-1}$ glucose for 4 hours before (GE) or after (EG) exposed to $10{\mu}L{\cdot}L^{-1}$ ethylene for 4 hours. Generally, the opening process of flowers with GE and EG treatments was similar to that of the control, however GE treatment delayed flower senescence. Both GE and EG treatments improved flower diameter and weight, and GE treatment delayed the time of flower weight decrease. Besides, GE delayed climacteric ethylene evolution for 8 hours. All above suggest that exogenous sugars delay tree peony 'Luoyang Hong' cut flower senescence and extend flower vase life through their roles in the decrease of water loss and the suppression of sensitivity to ethylene and ethylene production.

• Korean Journal of Materials Research
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• v.4 no.4
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• pp.416-427
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• 1994

The changes of crystallinity and microstructure and the $Si_{1-x}Ge_x/Sio_2$ interfaces of $Si_{1-x}Ge_x$ alloys deposited on amorphous $SiO_{2}$ were studied as a function of deposition temperature. The crystallinity, microstructure, and compositional uniformity of $Si_{1-x}Ge_x$ alloys deposited on the SiOl at different temperature were investigated by X-ray diffraction and transmission electron microscopy. And $Si_{1-x}Ge_x/Sio_2$ interface were investigated by high-resolution transmission electron microscopy. The $Si_{0.7}Ge_{0.3}/Sio_2$ films were deposited on amorphous $SiO_{2}$ at $300^{\circ}C,400^{\circ}C,500^{\circ}C,600^{\circ}C,$ and $700^{\circ}C$ by Si-MBE. In the film deposited at $300^{\circ}C$, only amorphous phase were observed. In the film deposited at $400^{\circ}C$, both amorphous and polycrystalline films were observed. Both phases were deposited simultaneously, but, at initial film growth, amorphous phase prevailed over polycrystalline phase. As the film thickness increased, the fraction of polycrystalline phase increased. At $500^{\circ}C$, thin amorphous layer was observed at lOnm from $SiO_{2}$ surface. In the films deposited at higher than $600^{\circ}C$, only crystalline phase were observed. Polycrystalline films had columnar structure. Compositional uniformity for deposited films were good regardless of deposition temperature. The interfaces of $Si_{1-x}Ge_x/Sio_2$ were flat, whatever polycrystal or amorphous was deposited on $SiO_{2}$.

• Transactions of the Society of Information Storage Systems
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• v.1 no.1
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• pp.34-41
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• 2005

We report some recent results in the rewritable Blu-ray Disc with enhanced overwrite cyclability by using the growth dominant eutectic based Ge(Sb70Te30)+Sb recording layer, GeN interface layer and write strategy optimization. We have developed phase-change optical media with appropriate write strategy for 36(i.e., 1X)-72Mbps(i.e., 2X) dual speed Blu-ray Disc system and fur the future high speed optical data storage. For recording layer, eutectic-based Ge(Sb70Te30)+Sb material was used and Sb/Te ratio and Ge content were optimized to obtain proper erasability and archival stability of recorded amorphous marks. The recording layer is wrapped up in GeN interface layers to obtain overwrite cyclability and higher crystallization speed. In addition, we designed appropriate write strategy so called Time-Shifted Multipulse (TSMP) write strategy where starting position of multipulse parts are shined from reference clock. With this write strategy, the jitter characteristics of the disc was improved and we found that leading edge jitter was improved much more than trailing edge jitter in 1X-2X speed recording. Finally, we investigated the higher speed feasibility of 144Mbps(i.e., 4X) by adopting some elemental doping to the eutectic based Ag-In-Sb-Te recording layer and structural optimization of constitution layers in Blu-ray Disc. In the paper, we report the effect of Sn addition for the feasibility of higher speed recording. The addition of Sn shows increases of the crystallization speed of phase change recording layer.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.55 no.6
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• pp.297-301
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• 2006

In the present work, we investigate the characteristics of new composition material, chalcogenide $Ge_1Se_1Te_2$ material in order to overcome the problems of conventional PRAM devices. The Tc of $Ge_1Se_1Te_2$ bulk was measured $231.503^{\circ}C$ with DSC analysis. For static DC test mode, at low voltage, two different resistances are observed. depending on the crystalline state of the phase-change resistor. In the first sweep, the as-deposited amorphous $Ge_1Se_1Te_2$ showed very high resistance. However when it reached the threshold voltage(about 11.8 V), the electrical resistance of device was drastically reduced through the formation of an electrically conducting path. The phase transition between the low conductive amorphous state and the high conductive crystal]me state was caused by the set and reset pulses respectively which fed through electrical signal. Set pulse has 4.3 V. 200 ns. then sample resistance is $80\sim100{\Omega}$. Reset pulse has 8.6 V 80 ns, then the sample resistance is $50{\sim}100K{\Omega}$. For such high resistance ratio of $R_{reset}/R_{set}$, we can expect high sensing margin reading the recorded data. We have confirmed that phase change properties of $Ge_1Se_1Te_2$ materials are closely related with the structure through the experiment of self-heating layers.

• Journal of the Korean Magnetics Society
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• v.23 no.4
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• pp.117-121
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• 2013

In this study we investigated magnetism and magnetostriction of B2-structured FeX (X = Al, Si, Ni, Ga, Ge, and Sn) using a first-principles method, in order to survey the possibility of developing a transition metal based magnetostriction material. The Full-potential Linearized Augmented Plane Wave method was employed for solving the Kohn-Sham equation within the generalized gradient approximation for exchange-correlation interaction between electrons. FeX alloys are stabilized in ferromagnetic states except for the FeSi and FeGe alloys. Magnetostrcition coefficients of FeX (X = Al, Ni, Ga, and Sn) were calculated to be -5, +6, -84, -522ppm, respectively. It is noteworthy that the magnetostriction coefficient (-522ppm) of FeSn is larger than that (+400ppm) of Gafenol.

• Proceedings of the Korean Magnestics Society Conference
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• 2003.12a
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• pp.318-318
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• 2003