• 한국균학회지
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• 제34권2호
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• pp.84-87
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• 2006

본 연구에서는 동충하초 균주를 이용하여 SDAY 배지 액체배양과 번데기배지 배양을 이용하여 $100{\sim}5,000\;ppm$ 농도에서 유기게르마늄 함유 동충하초 생산방법을 연구하여 게르마늄 동충하초 생산 가능성을 확인하였다. 액체배양과 번데기 배지 배양에서 게르마늄 첨가 농도를 100 ppm으로 조정했을 때, 생산되는 유기게르마늄의 양이 각각 442.4 ppm/g과 284 ppm으로 가장 높은 생산수율을 보여짐을 확인하였다. 또한 게르마늄의 양을 최대 5,000 ppm(액체배지)과 1,000 ppm(번데기배지)으로 첨가 했을때 각각 4,509.7 ppm/g과 1,058 ppm/g의 유기게르마늄이 생산 되어지는 것도 확인할 수 있었다. 이러한 결과로 비추어 볼 때, 무기게르마늄이 동충하초가 생장함에 있어 영양물질로 공급되어 양질의 유기게르마늄으로 변환 생산 되어진다는 것을 보여주는 것으로 해석할 수 있었다. 또한 본 연구 개발의 결과로 얻어진 게르마늄 함유 동충하초는 기존의 동충하초 효능에 유기게르마늄이라는 약리활성 물질이 첨가됨으로써 기능성식품, 화장품 원료 및 의약품 원료로도 사용될 수 있을 것으로 사료되어진다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1992년도 하계학술대회 논문집 B
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• pp.843-846
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• 1992

This thesis was investigated on optical-and ion-induced characteristics in positive(a-$Se_{75}Ge_{25}$) and negative (Ag/a-$Se_{75}Ge_{25}$) resists for focused-ion-beam microlithogaphy. The a-$Se_{75}Ge_{25}$ inorganic thin film shows an increase in optical absorption after exposure to$\sim$$10^{16}$ dose(ions/$cm^{2}$) of Ga ions. The observed shift in the absorption edge toward longer wavelengths is consistent with that in films exposed to band-gap photons ($\sim$$10^{20}$ photons/$cm^{2}$). But, ion induced shift is twice as much as that in film exposed to optical radiation. This result may be related with microstructural rearrangements with in the short range of SeGe network. Due to changes in the short range order, the chemical bonding may be affected, which results in increased chemical dissolution in ion-induced film. Also, this resist exhibits good thermal stability because of its high Tg(~220$^{\circ}C$). The composition of deposited film measured by AES is consistent with that of bulk.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.153-153
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• 2011

유리나 폴리머를 기판으로 하는 TFT(Thin film transistor), solar cell에서는 낮은 공정 온도에서($200{\sim}500^{\circ}C$) amorphous semiconductor thin film을 poly-crystal semiconductor thin film으로 결정화 시키는 기술이 매우 중요하게 대두 되고 있다. Ge은 Si에 비해 높은 carrier mobility와 낮은 녹는점을 가지므로, 비 저항이 낮을 뿐만 아니라 더 낮은 온도에서 결정화 할 수 있다. 하지만 일반적으로 쓰이는 Ge의 결정화 방법은 비교적 높은 열처리 온도를 필요로 하거나, 결정화된 원소에 남아있는 metal이 불순물 역할을 한다는 문제점, 그리고 불균일한 결정크기를 만든다는 단점이 있었다. 그 중에서도 현재 가장 많이 쓰이고 있는 MIC, MILC는 metal과 a-Ge이 접촉되는 interface나, grain boundary diffusion에 의해 핵 생성이 일어나고, 결정이 성장하는 메커니즘을 가지고 있으므로 단순 증착과 열처리 만으로는 앞서 말한 단점을 극복하는데 한계를 가지고 있다. 이에 PIII&D 장비를 이용하면, 이온 주입된 원소들이 모재와 반응 할 수 있는 표면적이 커짐으로 핵 생성을 조절 할 수 있을 뿐만 아니라, 이온 주입 시 발생하는 self annealing effect로 결정 크기까지도 조절할 수 있다. 또한 이러한 모든 process가 한 진공 장비 내에서 이루어지므로 장비의 단순화와, 공정간 단계별로 발생하는 불순물과 표면산화를 막을 수 있으므로 절연체 위에 저항이 낮고, hall mobility가 높은 poly-crystalline Ge thin film을 만들 수 있다. 본 연구에서는, 주로 핵 생성과정에서 seed를 만드는 이온주입 조건과, 결정 성장이 일어나는 증착 조건에 따라서 Ge의 결정방향과 크기가 많은 차이를 보이는데, 이는 HR-XRD(High resolution X-ray Diffractometer)와 Raman spectroscopy를 이용하여 측정 하였으며, SEM과 AFM으로 결정의 크기와 표면 거칠기를 측정하였다. 또한 Hall effect measurement를 통해 poly-crystalline thin film 의 저항과 hall mobility를 측정하였다.

• 한국전기전자재료학회논문지
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• 제24권4호
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• pp.271-275
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• 2011

In this paper, thermal stability of palladium germanide (Pd germanide) is analyzed for high performance Schottky barrier germanium metal oxide semiconductor field effect transistors (SB Ge-MOSFETs). Pd germanide Schottky barrier diodes were fabricated on n-type Ge-on-Si substrates and the formed Pd germanide shows thermal immunity up to $450^{\circ}C$. The barrier height of Pd germanide is also characterized using two methods. It is shown that Pd germanide contact has electron Schottky barrier height of 0.569~0.631 eV and work function of 4.699~4.761 eV, respectively. Pd germanide is promising for the nanoscale Schottky barrier Ge channel MOSFETs.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.644-647
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• 2001

Amorphous As-Ge-Se-S thin films have been studied with the aim of identifying optimum etching condition which can be used to produce holographic grating structure for use as diffractive optical elements. In this study, holographic gratings have been formed using He-Ne laser(632.8nm), and fabricated by the method of wet etching using NaOH etchant with various concentration(0.26N, 0.33N, 0.40N). The diffraction efficiency was obtained by +1st order intensity of the diffracted beam. The formed grating profiles were observed by atomic force microscope and showed that the expected grating profile could be achieved by controlling the etching time. Over-etching resulted in under-cutting of the grating lines. The highest 1st order diffraction efficiency for these gratings was about 5.05%.

• 약학회지
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• 제41권3호
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• pp.359-364
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• 1997

Resistance gene mphK was cloned from Escherichia coli 209K strain which is highly resistant to erythromycin (EM). By using the cloned plasmid pGE64, E. coli NM522 was transformed. The comparison of macrolide-phosphotransferase K [MPH(K)] activity between E. coli 209K and E. coli NM522(pGE64) showed that the total enzyme activity of MN522(pGE64) was fifty-fole higher than that of 209K. To identify characteristics of MPH(K) more precisely. MPH(K) was isolated and purified from the NM522 (pGE64). The final purification f MPH(K) through several stages of purification process was 89 fole and the overall recovery was 11%. This enzyme was monomer with the molecular weight of 34 kDa and its isoelectric point (pI) was 5.0. The optimal pH and temperature for activity were 8.0 and $40^{\circ}C$, respectively.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제55권9호
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• pp.423-428
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• 2006

We have been carried out the two-beam interference method to form the diffraction grating on chalcogenide $AS_{40}Se_{15}S_{35}Ge_{10}$ thin films for Holography Data Storage (HDS). In the present work, we have been formed holographic diffraction gratings using He-Ne laser (632.8nm) under different Polarization state combinations (intensity polarization holography, phase polarization holography). It was obtained the diffraction grating efficiency by 11st order intensity and investigated the formed grating structure using Atomic Force Microscopy (AFM). As the results, it is shown that the diffraction efficiency of (P: P) polarized recording was maximum 2.4% and we found that its value was rather higher than that of other-polarized recordings. From the results, it is confirmed that the efficient holographic grating formation on amorphous chalcogenide $AS_{40}Se_{15}S_{35}Ge_{10}$ films depend on both the spatial variation of intensity and the polarization state of the incident field pattern.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1996년도 추계학술대회 논문집
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• pp.143-146
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• 1996

In (GeTe)$_{100-x}$(Sb$_2$Te$_3$)$_{x}$(x=33.5, 50, 66.5, 80 at.%) thin films, the optical properties of amorphous and crystalline thin film, XRD were studied. Also, the application for the phase change optical recording materials with the high stability and rapid erasing ability were studied. In the (GeTe)$_{100-x}$(Sb$_2$Te$_{3}$)$_{x}$ the transmittance was decreased with the increase of x. In all thin films, the transmittance was decreased and the reflectance was increased by annealing and particularly, the reflectance before and after annealing showed the large reflectance ratio. The XRD pattern, it was confined that these change of optical properties was due to the crystallization of amorphous thin films. The reflectance change was investigated using isothermal annealing condition.ion.ion.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제55권7호
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• pp.354-358
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• 2006

In this paper, we investigated the selective etching rate of amorphous As-Ge-Se-S thin film due to the photoexpansion effect and fabricated the 2-dimensional embossing type diffraction grating hologram. We measured the thickness change with the etching time among NaOH solution after forming 1-dimension diffraction grating. As a results, we found that the selective etching rate were $2.5\AA/s,\;3.3\AA/s,\;3.9\AA/s$ where NaOH solution concentration were 0.26N, 0.33N, 0.36N, respectively. Also after the formation of 2-dimensional diffraction grating by the $90^{\circ}$ degree of circulation on the formed 1-dimensional diffraction grating, we etched selectively during 60sec, among 0.26N NaOH solution and obtained 2-dimensional embossing diffraction grating. As the results of AFM (Atomic Force Microscopy), we confirmed the formation of distinct embossing type 2-dimensional diffraction grating hologram, successfully.

• 통합자연과학논문집
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• 제10권3호
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• pp.131-136
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• 2017

The chemical shifts in the $^{13}C$ NMR spectra of 2,3,4,5-tetraphenyl-1-silacyclopentdienide dianion $[SiC_4Ph_4]^{2-}{\cdot}2[K^+]$ (3) and 2,3,4,5-tetraphenyl-1-germacyclopentdienide dianion $[GeC_4Ph_4]^{2-}{\cdot}2[K^+]$ (4) were compared to those of $[SiC_4Ph_4]^{2-}{\cdot}2[Li^+]$ (5), $[SiC_4Ph_4]^{2-}{\cdot}2[Na^+]$ (6), and $[GeC_4Ph_4]^{2-}{\cdot}2[Li^+]$ (7). The average polarizations in two phenyl groups of two potassium salts are decreased over 15% to 20% comparing to those of the lithium salts and sodium salt {$[EC_4Ph_4]^{2-}{\cdot}2[M^+]$ (E=Si, Ge, M=Li, Na) due to the effect of the counter potassium cation.