• Transactions on Electrical and Electronic Materials
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• v.9 no.6
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• pp.223-226
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• 2008

$Ge_1Se_1Te_2$ chalcogenide amorphous materials was prepared by the conventional melt-quenching method. Samples were processed bye-beam evaporator systems and RF-sputtering systems. Phase change characteristics were analyzed by measuring glassification temperature, crystallization temperature and density of bulk material. The thermal characteristics were measured at the temperature between 300 K and 700 K, and the electrical characteristics were studied within the range from 0 V to 3 V. The obtained results agree with the electrothermal model for Phase-Change Random Access Memory.

• Proceedings of the KIEE Conference
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• 2007.07a
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• pp.1335-1336
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• 2007

Among the emerging non-volatile memory technologies, phase change memories are the most attractive in terms of both performance and scalability perspectives. Phase-change random access memory(PRAM), compare with flash memory technologies, has advantages of high density, low cost, low consumption energy and fast response speed. However, PRAM device has disadvantages of set operation speed and reset operation power consumption. In this paper, we investigated scalability of $Ge_{1}Se_{1}Te_{2}$ chalcogenide material to improve its properties. As a result, reduction of phase change region have improved electrical properties of PRAM device.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07a
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• pp.377-380
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• 2004

The phase transition between amorphous and crystalline states in chalcogenide semiconductor films can controlled by electric pulses or pulsed laser beam; hence some chalcogenide semiconductor films can be applied to electrically write/erase nonvolatile memory devices, where the low conductive amorphous state and the high conductive crystalline state are assigned to binary states. GeSbTe(GST), AsSbTe(AST), SeSbTe(SST) used to phase change materials by appling electrical pulses. Thickness of ternary chalcogenide thin films have about 100nm. Upper and lower electrode were made of Al. It is compared with I-V characteristics after impress the variable pulses.

• Journal of Advanced Marine Engineering and Technology
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• v.29 no.6
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• pp.707-712
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• 2005

PRAM (Phase change random access memory) is one of the most promising candidates for next generation Non-volatile Memories. The Phase change materials have been researched in the field of optical data storage media. Among the phase change materials. $Ge_2Sb_2Te_5$ is very well known for its high optical contrast in the state of amorphous and crystalline. However the characteristics required in solid state memory are quite different from optical ones. In this study. the structural Properties of GeSbTe thin films with composition were investigated for PRAM. The 100-nm thick $Ge_2Sb_2Te_5$ and $Sb_2Te_3$ films were deposited on $SiO_2/Si$ substrates by RF sputtering system. In order to characterize the crystal structure and morphology of these films. x-ray diffraction (XRD). atomic force microscopy (AFM), differential scanning calorimetry (DSC) and 4-point measurement analysis were performed. XRD and DSC analysis result of GST thin films indicated that the crystallization of $Se_2Sb_2Te_5$ films start at about $180^{\circ}C$ and $Sb_2Te_3$ films Start at about $125^{\circ}C$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.57-57
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• 2010

In this study, nano-sized phase change materials were evaluated using nanoimprint lithography and c-AFM technique. The 200nm in diameter phase change nano-pillar device of GeSbTe, AgInSbTe, InSe, GeTe, GeSb were successfully fabricated using nanoimprint lithography. And the electrical properties of the phase change nano-pillar device were evaluated using c-AFM with pulse generator and voltage source.

• Journal of the Korean Ceramic Society
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• v.33 no.8
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• pp.855-862
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• 1996

The nucleation and the crystal growth rates of Ge-Se-Te chalcogenide glass by two step heat-treatment and its effect on the mechanical optical properties and water-resistance were determined. The maximum nuclea-tion and crystal growth rate were 2.1$\times$103/mm3 .min at 28$0^{\circ}C$ and 0.4${\mu}{\textrm}{m}$/min at 33$0^{\circ}C$ respectively. When the crystal volume fraction with crystal size $1.5mutextrm{m}$ was about 4% the (hardness and fracture toughness were about 117kg/mm2 and 6.0 MPa.mm1/2)respectively. The weight loss of crystallized glass in water was lower than parent glass($25^{\circ}C$ for 32 hrs : 0.03% 8$0^{\circ}C$ for 16 hrs : 0.1%) as 0.01% at $25^{\circ}C$, 0.03% at 8$0^{\circ}C$ for 16 hrs : 0.1%) at $25^{\circ}C$ 0.03% at 8$0^{\circ}C$ respectively. The IR-transmittance decreased with increasing crystal size and crystal volume fraction. The IR-transmittance of crystallized glass with the crystal size of $1.5mutextrm{m}$ (crystal volume fraction : 4%) presented 56% which was about 4% lower than that of parent glass.

• Proceedings of the Korean Vacuum Society Conference
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• 2008.02a
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• pp.283-283
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• 2008

• Journal of Technologic Dentistry
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• v.35 no.4
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• pp.333-341
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• 2013

Purpose: The purpose of this study was to evaluate the flexural strength of indirect composite resins with different polymerization conditions. Methods: Ten specimens ($2mm{\times}2mm{\times}25mm$) of each composite resins (Tescera (T), Gradia (S) and Sinfony (S)) were fabricated by two polymerization methods : manufacturers's and light heat pressure. Composite resins polymerized by manufacturers's method and light heat pressure served as control (TS, GS and SS) and experimental groups (TE, GE and SE), respectively. The composite resins were tested for flexural strength and the surface of composite resins were observed with scanning electron microscope (SEM) under X1,000 magnification. Results: The flexural strength values of cured composite resin decreased in the following order: TE (195.4MPa), TS (179.8MPa), GE (169.9MPa), SE (137.7MPa), SS (111.1MPa) and GS (100.9MPa) groups. Conclusion: The flexural strength values between the control and the experimental groups were not significantly different although experimental groups showed higher flexural strength values than control groups.

• Progress in Medical Physics
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• v.10 no.1
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• pp.33-40
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• 1999

Purpose: To simulate and measure the signal intensity of various tissues near bone interface in 2D and 3D neurological MR images. Materials and Methods: In neurological proton density (PD) weighted images, every component in the head including cerebrospinal fluid (CSF), muscle and scalp, with the exception of bone, are visualised. It is possible to acquire images in 2D or 3D. A 2D fast spin-echo (FSE) sequence is chosen for the 2D acquisition and a 3D gradient-echo (GE) sequence is chosen for the 3D acquisition. To find out the signal intensities of CSF, muscle and fat (or scalp) for the 2D spin-echo(SE) and 3D gradient-echo (GE) imaging sequences, the theoretical signal intensities for 2D SE and 3D GE were calculated. For the 2D fast spin-echo (FSE) sequence, to produce the PD weighted image, long TR (4000 ms) and short TE$_{eff}$ (22 ms) were employed. For the 3D GE sequence, low flip angle (8$^{\circ}$) with short TR (35 ms) and short TE (3 ms) was used to produce the PD weighted contrast. Results: The 2D FSE sequence has CSF, muscle and scalp with superior image contrast and SNR of 39 - 57 while the 3D GE sequence has CSF, muscle and scalp with broadly similar image contrast and SNR of 26 - 33. SNR in the FSE image were better than those in the GE image and the skull edges appeared very clearly in the FSE image due to the edge enhancement effect in the FSE sequence. Furthermore, the contrast between CSF, muscle and scalp in the 2D FSE image was significantly better than in the 3D GE image, due to the strong signal intensities (or SNR) from CSF, muscle and scalp and enhanced edges of CSF. Conclusion: The signal intensity of various tissues near bone interface in neurological MR images has been simulated and measured. Both the simulation and imaging of the 2D SE and 3D GE sequences have CSF, fat and muscle with broadly similar image intensity and SNR's and have succeeded in getting all tissues about the same signal. However, in the 2D FSE sequence, image contrast between CSF, muscle and scalp was good and SNR was relatively high, imaging time was relatively short.

• Transactions on Electrical and Electronic Materials
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• v.16 no.3
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• pp.151-155
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• 2015

We fabricated the Cu Schottky contact on an n-type Ge wafer and investigated the forward bias current-voltage (I-V) characteristics in the temperature range of 100~300 K. The zero bias barrier height and ideality factor were determined based on the thermionic emission (TE) model. The barrier height increased and the ideality factor decreased with increasing temperature. Such temperature dependence of the barrier height and the ideality factor was associated with spatially inhomogeneous Schottky barriers. A notable deviation from the theoretical Richardson constant (140.0 Acm^-2K^-2 for n-Ge) on the conventional Richardson plot was alleviated by using the modified Richardson plot, which yielded the Richardson constant of 392.5 Acm^-2K^-2. Finally, we applied the theory of space-charge-limitedcurrent (SCLC) transport to the high forward bias region to find the density of localized defect states (N_t), which was determined to be 1.46 × 10¹² eV^-1cm^-3.