• 한국재료학회:학술대회논문집
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• 한국재료학회 2009년도 춘계학술발표대회
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• pp.24.2-24.2
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• 2009

Nanostuctures such as nanodot and nanowire have been extensively studied as building blocks for nanoscale devices. However, the direct growth of the nanostuctures at the desired position is one of the most important requirements for realization of the practical devices with high integrity. Self-assembled nanotemplate is one of viable methods to produce highly-ordered nanostructures because it exhibits the highly ordered nanometer-sized pattern without resorting to lithography techniques. And selective epitaxial growth (SEG) can be a proper method for nanostructure fabrication because selective growth on the patterned openings obtained from nanotemplate can be a proper direction to achieve high level of control and reproducibility of nanostructucture fabrication. Especially, SiGe has led to the development of semiconductor devices in which the band structure is varied by the composition and strain distribution, and nanostructures of SiGe has represented new class of devices such nanowire metal-oxide-semiconductor field-effect transistors and photovoltaics. So, in this study, various shaped SiGe nanostructures were selectively grown on Si substrate through ultrahigh vacuum chemical vapor deposition (UHV-CVD) of SiGe on the hexagonally arranged Si openings obtained using nanotemplates. We adopted two types of nanotemplates in this study; anodic aluminum oxide (AAO) and diblock copolymer of PS-b-PMMA. Well ordered and various shaped nanostructure of SiGe, nanodots and nanowire, were fabricated on Si openings by combining SEG of SiGe to self-assembled nanotemplates. Nanostructure fabrication method adopted in this study will open up the easy way to produce the integrated nanoelectronic device arrays using the well ordered nano-building blocks obtained from the combination of SEG and self-assembled nanotemplates.

• 한국세라믹학회지
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• 제43권3호
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• pp.177-184
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• 2006

Dy $L_3$-edge XANES and EXAFS spectra of chalcogenide Ge-As-S glass doped with ca. 0.2 wt% dysprosium have been investigated along with some reference Dy-containing crystals. Amplitude of the white-line peak in XANES spectrum of the glass sample turns out to be stronger than that of other reference crystals, i.e., $DY_2S_3,\;Dy_2O_3\;and\;DyBr_3$. It has been verified from the Dy $L_3$-edge EXAFS spectra that a central Dy atom is surrounded by $6.7{\pm}0.5$ sulfur atoms in its first coordination shell in the Ge-As-S glass, which is relatively smaller than 7.5 of the $Dy_2S_3$ crystal. Averaged Dy-S inter-atomic-distance of the glass ($2.78{\pm}0.01{\AA}$) also turns out to be somewhat shorter than that of the $Dy_2S_3$ crystal ($2.82{\pm}0.01{\AA}$). Such nanostructural changes occurring at Dy atoms imply there being stronger covalency of Dy-S chemical bonds in the Ge-As-S glass than in the crystal counterpart. The enhanced covalency in the nanostructural environment of $Dy^{3+}$ ions inside the glass would then be responsible for optical characteristics of the $4f{\leftrightarrow}4f$ transitions of the dopants, i.e., increase of oscillator strengths and spontaneous radiative transition probabilities.

• 한국광학회지
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• 제26권5호
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• pp.255-260
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• 2015

본 논문에서는 MAC(metal-assisted chemical) 에칭을 이용하여 Ge(Germanium) 표면에 나노구조를 형성하고, 그 위에 열팽창계수가 높은 PDMS를 적용하여 광음향효과를 이용한 초음파 발생 소자를 제작하였다. Ge 나노구조 위에 PDMS를 스핀 코팅하여 만든 초음파 발생 소자는 100 nm Cr(Chromium) 대비 약 3배의 초음파를 발생시켰다. 또한, Ge 나노구조를 PDMS 중앙에 위치시 킬 경우 쿼츠 기판을 통한 열손실이 줄어들어 100 nm Cr 대비 8.5배의 강한 초음파를 얻을 수 있었다.

• 한국정밀공학회지
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• 제23권1호
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• pp.32-40
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• 2006

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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• pp.288-288
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• 2013

Lithium-ion battery (LIB) is one of the most important rechargeable battery and portable energy storage for the electric digital devices. In particular, study about the higher energy capacity and longer cycle life is intensively studied because of applications in mobile electronics and electric vehicles. Generally, the LIB's capacity can be improved by replacing anode materials with high capacitance. The graphite, common anode materials, has a good cyclability but shows limitations of capacity (~374 mAh/g). On the contrary, silicon (Si) and germanium(Ge), which is same group elements, are promising candidate for high-performance LIB electrodes because it has a higher theoretical specific capacity. (Si:4200 mAh/g, Ge:1600 mAh/g) However, it is well known that Si volume change by 400% upon full lithiation (lithium insertion into Si), which result in a mechanical pulverization and poor capacity retention during cycling. Therefore, variety of nanostructure group IV elements, including nanoparticles, nanowires, and hollow nanospheres, can be promising solution about the critical issues associated with the large volume change. However, the fundamental research about correlation between the composition and structure for LIB anode is not studied yet. Herein, we successfully synthesized various structure of nanowire such as Si-Ge, Ge-Carbon and Si-graphene core-shell types and analyzed the properties of LIB. Nanowires (NWs) were grown on stainless steel substrates using Au catalyst via VLS (Vapor Liquid Solid) mechanism. And, core-shell NWs were grown by VS (Vapor-Solid) process on the surface of NWs. In order to characterize it, we used FE-SEM, HR-TEM, and Raman spectroscopy. We measured battery property of various nanostructures for checking the capacity and cyclability by cell-tester.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2012년도 춘계학술발표대회
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• pp.86.1-86.1
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• 2012

나노재료와 나노기술의 연구개발 지원을 위하여 국가나노인프라인 나노종합팹센터에서 개발되고 있는 나노재료/나노현상의 실시간 관찰을 위한 SiN membrane chip 기술 및 나노그래핀 기반구축에 대한 최근 결과와 향후계획을 소개하고자 한다. 나노재료의 합성, 배열, 구조 등의 실시간 관찰을 가능하게 하기 위하여 제작된SiN membrane chip은 투과전자현미경(transmission electron microscope, TEM)에서 투명한 기판으로, 그 위에 나노재료를 합성, 배열하고 원하는 모양의 전극을 형성하여 나노재료 및 나노소자의 온도변화 및 전기적 특성 측정 등이 가능하다. 이러한 기술은 Ag, Sn, Cu 등 nano-cluster의 percolation 소자, SiN 및 Graphene 나노기공 소자, SiGe, BiTe, Si, ZnO 나노선 및 CNT의 내부구조변화, 상변화 등 다양한 나노재료/나노소자의 나노현상 관찰 및 해석에 적용되었다.