• 제목/요약/키워드: Ge doped ZnO

검색결과 5건 처리시간 0.022초

RF magnetron sputtering으로 생성한 Ga,Ge와 Ga이 도핑된 ZnO 박막의 특성 (Properties of Ge,Ga and Ga-doped ZnO thin films prepared by RF magnetron sputtering)

  • 정일현;김유진;박정윤;이루다
    • 반도체디스플레이기술학회지
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    • 제9권3호
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    • pp.41-45
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    • 2010
  • The ZnO thin films doped with Ga(GZO) and both Ga and Ge(GZO:Ge) were deposited on glass substrate by using RF sputtering system respectively. Structural, morphological and optical properties of the films deposited in the same condition were investigated. Structural properties of the films were investigated by Field Emission Scanning Electron Microscopy, FE-SEM images and X-ray diffraction, XRD analysis. These studies showed shape of films' surface and direction of film growth respectively. It's showed that all films were deposited by vertical orientation strongly. It can be confirmed that all dopants of targets were included in deposited films by results of EDX analysis. UV-Vis spectrometer results showed that all samples had highly transparent characteristics in visible region and have similar 3.28~3.31 eV band gap. It was found that existence of all dopants by EDX analysis. Morphology and roughness of surface of each film were clearly shown by Atomic Force Microscopy, AFM images. It was found in this research that film doped with Ge more dense and stable with hardly any difference in gap energy compared to ZnO films.

RF 마그네트론 스퍼트링에 의한 Ga 와 Ge가 도핑된 ZnO 박막 특성의 온도효과 (Effects of Substrate Temperature on Properties of (Ga,Ge)-Codoped ZnO Thin Films Prepared by RF Magnetron Sputtering)

  • 정일현
    • 한국전기전자재료학회논문지
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    • 제24권7호
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    • pp.584-588
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    • 2011
  • The ZnO thin films doped with Ga and Ge (GZO:Ge) were prepared on glass substrate using RF sputtering system. Structural, morphological and optical properties of the films deposited in different temperatures were studied. Proportion of the element of using target was 97 wt% ZnO, 2.5 wt% Ga and 0.5 wt% Ge with 99.99% highly purity. Structural properties of the samples deposited in different temperatures with 200 w RF power were investigated by field emission scanning electron microscopy, FE-SEM images and x-ray diffraction XRD analysis. Atomic force microscopy, AFM images were able to show the grain scales and surface roughness of each film rather clearly than SEM images. it was showed that increasing temperature have better surface smoothness by FE-SEM and AFM images. Transmittance study using UV-Vis spectrometer showed that all the samples have highly transparent in visible region (300~800 nm). In addition, it can be able to calculate bandgap energy from absorbance data obtained with transmittance. The hall resistivity, mobility, and optical band gap energy are influenced by the temperature.

Improvement of 4I11/24I13/2 Transition Rate and Thermal Stabilities in Er3+DopedTeO2B2O3(GeO2)ZnOK2O Glasses

  • Cho, Doo-Hee;Choi, Yong-Gyu;Kim, Kyong-Hon
    • ETRI Journal
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    • 제23권4호
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    • pp.151-157
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    • 2001
  • Spectroscopic and thermal analysis indicates that tellurite glasses doped with B2O3 and GeO2 are promising candidate host materials for wide-band erbium doped fiber amplifier (EDFA) with a high 980 nm pump efficiency. In this study, we measured the thermal stabilities and the emission cross-sections for Er3+:4I13/24I15/2 transition in this tellurite glass system. We also determined the Judd-Ofelt parameters and calculated the radiative transition rates and the multiphonon relaxation rates in this glass system. The 15 mol% substitution of B2O3 for TeO2 in the Er3+doped75TeO220ZnO5K2O glass raised the multiphonon relaxation rate for 4I11/24I13/2 transition from 4960 s1 to 24700 s1, but shortened the lifetime of the 4I13/2 level by 14 % and reduced the emission cross-section for the 4I13/24I15/2 transition by 11%. The 15 mol% GeO2 substitution in the same glass system also reduced the emission cross-section but increased the lifetime by 7%. However, the multiphonon relaxation rate for 4I11/24I13/2 transition was raised merely by 1000 s1. Therefore, a mixed substitution of B2O3 and GeO2 for TeO2 was concluded to be suitable for the 980 nm pump efficiency and the fluorescence efficiency of 4I13/24I15/2 transition in Er3+doped tellurite glasses.

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Zn4SnSe6Zn4SnSe6:Co2+ 단결정에서 광학적 에너지 띠 및 열역학적 함수의 온도의존성 연구 (Temperature dependence of optical energy gaps and thermodynamic function of Zn4SnSe6 and Zn4SnSe6:Co2+ single crystals)

  • 김덕태;김남오;최영일;김병철;김형곤;현승철;김병인;송찬일
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2002년도 제4회 영호남학술대회 논문집
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    • pp.25-30
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    • 2002
  • The ternary semiconducting compounds of the A4BX6(A=Cd, Zn, Hg; B=Si, Sn, Ge; X=S, Se, Te) type exhibit strong fluorescence and high photosensitivity in the visible and near infrared ranges, so these are supposed to be materials applicable to photoelectrical devices. These materials were synthesized and single crystals were first grown by Nitsche, who identified the crystal structure of the single crystals. In this paper. author describe the undoped and Co2+-doped Zn4SnSe6 single crystals were grown by the chemical transport reaction(CTR) method using iodine of 6mg/cm3 as a transport agent. For the crystal. growth, the temperature gradient of the CTR furnace was kep at 700C for the source aone and at 820C for the growth zone for 7-days. It was found from the analysis of x-ray diffraction that undoped and Co2+-doped Zn4SnSe6 compounds have a monoclinic structure. The optical absorption spectra obtained near the fundamental absorption edge showed that these compounds have a direct energy gaps. These temperature dependence of the optical energy gap were closely investigated over the temperature range 10[K]~300[K]

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