• Investigative Magnetic Resonance Imaging
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• v.7 no.1
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• pp.12-21
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• 2003

Purpose : In order to overcome limitations in the existing conventional spectrometer, a new spectrometer with advanced functionalities is designed and implemented. Materials and Methods : We designed a spectrometer using the TMS320C6701 DSP capable of 1 giga floating point operations per second (GFLOPS). The spectrometer can generate continuously varying complicate gradient waveforms by real-time calculation, and select image plane interactively. The designed spectrometer is composed of two parts: one is DSP-based digital control part, and the other is analog part generating gradient and RF waveforms, and performing demodulation of the received RF signal. Each recover board can measure 4 channel FID signals simultaneously for parallel imaging, and provides fast reconstruction using the high speed DSP. Results : The developed spectrometer was installed on a 1.5 Tesla whole body MRI system, and performance was tested by various methods. The accurate phase control required in digital modulation and demodulation was tested, and multi-channel acquisition was examined with phase-array coil imaging. Superior image quality is obtained by the developed spectrometer compared to existing commercial spectrometer especially in the fast spin echo images. Conclusion : Interactive control of the selection planes and real-time generation of gradient waveforms are important functions required for advanced imaging such as spiral scan cardiac imaging. Multi-channel acquisition is also highly demanding for parallel imaging. In this paper a spectrometer having such functionalities is designed and developed using the TMS320C6701 DSP having 1 GFLOPS computational power. Accurate phase control was achieved by the digital modulation and demodulation techniques. Superior image qualities are obtained by the developed spectrometer for various imaging techniques including FSE, GE, and angiography compared to those obtained by the existing commercial spectrometer.

• KSII Transactions on Internet and Information Systems (TIIS)
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• v.9 no.10
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• pp.3945-3964
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• 2015

Since the decentralized structure and the blindness of a large-scale wireless network make it difficult to collect the real-time channel state or other information from random distributed relays, a fundamental question is whether it is feasible to perform the relay selection without this knowledge. In this paper, a Slotted ALOHA based Greedy Relay Selection (SAGRS) scheme is presented. The proposed scheme allows the relays satisfying the user's minimum transmission request to compete for selection by randomly accessing the channel through the slotted ALOHA protocol without the need for the information collection procedure. Moreover, a greedy selection mechanism is introduced with which a user can wait for an even better relay when a suitable one is successfully stored. The optimal access probability of a relay is determined through the utilization of the available relay region, a geographical region consisting of all the relays that satisfy the minimum transmission demand of the user. The average number of the selection slots and the failure probability of the scheme are analyzed in this paper. By simulations, the validation and the effectiveness of the SAGRS scheme are confirmed. With a balance between the selection slots and the instantaneous rate of the selected relay, the proposed scheme outperforms other random access selection schemes.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.399-399
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• 2013

Metal silicides는 Si 기반의microelectronic devices의 interconnect와 contact 물질 등에 사용하기 위하여 그 형성 mechanism과 전기적 특성에 대한 연구가 많이 이루어지고 있다. 이 중 Rare-earth(RE) silicides는 저온에서 silicides를 형성하고, n-type Si과 낮은 Schottky Barrier contact (~0.3 eV)을 이룬다. 또한 낮은 resistivity와 Si과의 작은 lattice mismatch, 그리고 epitaxial growth의 가능성, 높은 thermal stability 등의 장점을 갖고 있다. RE silicides 중 ytterbium silicide는 가장 낮은 electric work function을 갖고 있어 n-channel schottky barrier MOSFETs의 source/drain으로 주목받고 있다. 또한 Silicon 기반의 CMOSFETs의 성능 향상 한계로 인하여 germanium 기반의 소자에 대한 연구가 이루어져 왔다. Ge 기반 FETs 제작을 위해서는 낮은 source/drain series/contact resistances의 contact을 형성해야 한다. 본 연구에서는 저접촉 저항 contact material로서 ytterbium germanide의 가능성에 대해 고찰하고자 하였다. HRTEM과 EDS를 이용하여 ytterbium germanide의 미세구조 분석과 면저항 및 Schottky Barrier Heights 등의 전기적 특성 분석을 진행하였다. Low doped n-type Ge (100) wafer를 1%의 hydrofluoric (HF) acid solution에 세정하여 native oxide layer를 제거하고, 고진공에서 RF sputtering 법을 이용하여 ytterbium 30 nm를 먼저 증착하고, 그 위에 ytterbium의 oxidation을 방지하기 위한 capping layer로 100 nm 두께의 TiN을 증착하였다. 증착 후, rapid thermal anneal (RTA)을 이용하여 N2 분위기에서 $300{\sim}700^{\circ}C$에서 각각 1분간 열처리하여 ytterbium germanides를 형성하였다. Ytterbium germanide의 미세구조 분석은 transmission electron microscopy (JEM-2100F)을 이용하였다. 면 저항 측정을 위해 sulfuric acid와 hydrogen peroxide solution (H2SO4:H2O2=6:1)에서 strip을 진행하여 TiN과 unreacted Yb을 제거하였고, 4-point probe를 통하여 측정하였다. Yb germanides의 면저항은 열처리 온도 증가에 따라 감소하다 증가하는 경향을 보이고, $400{\sim}500^{\circ}C$에서 가장 작은 면저항을 나타내었다. HRTEM 분석 결과, deposition 과정에서 Yb과 Si의 intermixing이 일어나 amorphous layer가 존재하였고, 열처리 온도가 증가하면서 diffusion이 더 활발히 일어나 amorphous layer의 두께가 증가하였다. $350^{\circ}C$ 열처리 샘플에서 germanide/Ge interface에서 epitaxial 구조의 crystalline Yb germanide가 형성되었고, EDS 측정 및 diffraction pattern을 통하여 안정상인 YbGe2-X phase임을 확인하였다. 이러한 epitaxial growth는 면저항의 감소를 가져왔으며, 열처리 온도가 증가하면서 epitaxial layer가 증가하다가 고온에서 polycrystalline 구조의 Yb germanide가 형성되어 면저항의 증가를 가져왔다. Schottky Barrier Heights 측정 결과 또한 면저항 경향과 동일하게 열처리 증가에 따라 감소하다가 고온에서 다시 증가하였다.

• Bulletin of the Korean Chemical Society
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• v.32 no.5
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• pp.1519-1526
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• 2011

A previous study (Lee, C. W. J. Phys. B 2010, 43, 175002) that isolated the overlapping resonances in the photoionization spectra using multichannel quantum defect theory (MQDT) in systems involving a single open channel was extended to manage many open channels when the closed channels are degenerate. The theory was applied to the dipole allowed J = 1$^{\circ}$ spectra from the ground state with excitation energies lying between the lowest ionization thresholds for rare gas atoms, Ar, Kr, and Xe, and also for group IV elements, Ge, Sn and Pb.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.346-346
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• 2010

A capacitorless one transistor dynamic random access memory (1T-DRAM) on silicon-germanium-on-insulator substrate was investigated. SGOI technology can make high effective mobility because of lattice mismatch between the Si channel and the SiGe buffer layer. To evaluate memory characteristics of 1T-DRAM, the floating body effect is generated by impact ionization (II) and gate induced drain leakage (GIDL) current. Compared with use of impact ionization current, the use of GIDL current leads to low power consumption and larger sense margin.

• Proceeding of EDISON Challenge
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• 2016.03a
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• pp.295-298
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• 2016

Future logic device over the FinFET generation requires a complete electrostatics and transport characteristic for low-power and high-speed operation as extremely scaled devices. Silicon, Germanium and III-V based nanowire-based MOSFET devices and few-layer TMDC (Transition metal dichalcogenide monolayers) based multi-gate devices have been brought attention from device engineers due to those excellent electrostatic and novel device characteristic. In this study, we simulated ultrascaled Si/Ge/InAs gate-all-around nanowire MOSFET and MoS2 TMDC based DG MOSFET and TFET device by tight-binding NEGF method. As a result, we can find promising candidates of the future logic device of each channel material and device structures.

• JSTS:Journal of Semiconductor Technology and Science
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• v.11 no.3
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• pp.182-189
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• 2011

In this work, a tunneling field-effect transistor (TFET) based on heterojunctions of compound and Group IV semiconductors is introduced and simulated. TFETs based on either silicon or compound semiconductors have been intensively researched due to their merits of robustness against short channel effects (SCEs) and excellent subthreshold swing (SS) characteristics. However, silicon TFETs have the drawback of low on-current and compound ones are difficult to integrate with silicon CMOS circuits. In order to combine the high tunneling efficiency of narrow bandgap material TFETs and the high mobility of III-V TFETs, a Type-I heterojunction tunneling field-effect transistor (I-HTFET) adopting $Ge-Al_xGa_{1-x}As-Ge$ system has been optimized by simulation in terms of aluminum (Al) composition. To maximize device performance, we considered a nanowire structure, and it was shown that high performance (HP) logic technology can be achieved by the proposed device. The optimum Al composition turned out to be around 20% (x=0.2).

• Proceedings of the Korean Society of Propulsion Engineers Conference
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• 2011.11a
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• pp.344-347
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• 2011

This paper presents qualification process of the T700/701K turbo-shaft engine for Korean Utility Helicopter(KUH). The T700/701K is the rear-drive variant of the GE's T700-701C/D engine which was qualified for military applications in the world. The main scope of the development is the modification from a front-drive engine to a rear-drive one, the performance enhancement of the power turbine and the incorporation of two channel FADEC(Full Authority Digital Engine Control) system for more reliable operation. Therefore, T700/701K engine must be qualified by Korean government in order to perform a flight in the country. Reflecting the influence of developing scope, the main requirements including performance and control are verified by test and analysis, while the requirement for module or component that is same to that of T700-701C/D are verified by similarity.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.8 no.1
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• pp.18-27
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• 2004

In this paper, we presents an analytical simulation procedure for evaluation in baseband digital modulated signals distortions in the present of RF power amplifier(SSPA) nonlinear behavior and backoff operations of OFDM wireless transmission system. we obtained the optimum nonlinear transfer function of designed SSPA with the SiGe HBT bias currents of OFDM multi-channel wireless transmission system and compared this transfer function to SSPA nonlinear modeling functions mathematically, we finds optimum bias conditions of designed SSPA. With the derived nonlinear modeling function of SSPA, We analysed the PSD characteristics of in-band and out-band output powers of SSPA EVM measurement results of distorted constellation signals with the input power levels of SSPA. The results of paper can be applied to find the SSPA linearly with optimum bias currents and determine the SSPA input backoff bias for AGC control circuits of SSPA.

• Journal of the Korean Society of Propulsion Engineers
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• v.15 no.4
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• pp.79-84
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• 2011

This paper presents development activities of the T700/701K turbo-shaft engine for Korean Utility Helicopter(KUH). The T700/701K is the first rear-drive variant of the GE's T700 engine which is proven for military applications in the world. The main workscope of the development includes a modification from a front-drive engine to a rear-drive one, an performance enhancement of the power turbine and an incorporation of two channel FADEC(Full Authority Digital Engine Control) system for more reliable operation. The first engine run for development and qualification test was successfully completed in 2008. Since the PFRT(Preliminary Flight Rating Test) has been completed, the first flight of the engine installed in the first prototype of KUH has been successfully demonstrated in March, 2010 and the engine installation compatibility tests are being carried out during KUH flight test. The test and evaluation for qualification has been done except for the low cycle fatigue test up to date.