• Title/Summary/Keyword: Gd_2O_3:Eu^{3+}$

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Optical properties of epitaxial $Gd_2$O_3:EU^{3+}$luminescent thin films depending on crystallinity ($Gd_2$O_3:EU^{3+}$ 형광체 박막의 결정성에 따른 발광특성 연구)

  • 장문형;최윤기;정권범;황보상우;장홍규;노명근;조만호;손기선;김창해
    • Journal of the Korean Vacuum Society
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    • v.12 no.4
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    • pp.275-280
    • /
    • 2003

  • Epitaxial Gd$_2O_3:Eu^{3+}$luminescent thin films have been grout on Si(III) substrates using ionized Cluster Beam Deposition (ICBD). After the film growing, they were implanted and post annealed to change the crystal structure. The initial growth stage was monitored by using in-situ Reflection High Energy Electron Diffraction (RHEED). The formed crystal structure was identified with X-ray diffraction (XRD) technique and Fourier transform infrared (FT-R) spectroscopy. The electronic states variations were investigated by Near Edge X-ray Absorption Fine Structure (NEXAFS). Photoluminescence (PL), Cathodoluminescence (CL). and Vacuum ultraviolet (VUV) spectrum were used for examining the optical properties. We report the optical property changes depending on crystal structure and the electronic states.

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