• Transactions of the Korean Society for Noise and Vibration Engineering
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• v.21 no.3
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• pp.212-219
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• 2011

In this paper, intrusion detection technique based on the sound field variation of audio frequency in the security space is proposed. The sound field formed by sound source can be detected with the microphone when the obstacle or intruder is positioned. The sound field variation due to the intruder is mainly caused by the interference of audio wave. With the help of numerical simulation of sound field formations, the increase or decrease of sound pressure level is analyzed not only by the obstacle, but also by the intruder. Even the microphone is positioned behind the source, sound pressure level can be increased or decreased due to the interference of sound wave. Frequency response test is performed with Gaussian white noise signal to get the whole frequency response from 0 to half of sampling frequency. There are three security cases. Case 1 is the situation of empty space with and without intruder, case 2 is the situation of blocking obstacle with and without intruder, and case 3 is the situation of side blocking obstacle with and without intruder. At each case, the frequency response is obtained first at the security space without intruder, and second with intruder. From the experiment, intruder size of diameter of 50 cm pillar can be successfully detected with the proposed technique. Moreover, the case 2 and case 3 bring about bigger sound field variation. It means that the proposed technique have the potential of more credible security guarantee in real situation.

• Journal of Korean Ophthalmic Optics Society
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• v.5 no.1
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• pp.101-105
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• 2000

This study was to investigate the effect of EEG wave type on visual cortex of visual target according to position of fixation point on the Korean. Visual evoked potential system used the BIO-Pag and recorded to 586 computer. The illumination was 500 lux and the visual target was red light dot of 3 cm size. The results of the convergence and divergence as follows: The visual stimulation waves on the visual cortex have about 70% of delta wave, about 10% of beta wave, about 9% of theta wave and about 7% of alpha wave respectively. The convergence state was much more appeared the fast wave on the comparative of the divergence. Therefore, the convergence state was much more producted the beta and alpha wave on the comparative of the divergence. On the other hand, on the convergence and divergence, the histogram amplitude of EEG wave appeared almost the non-Gaussian shape. According to the phase analysis of amplitude of EEG wave almost all type was linear shape.

• The Transactions of the Korea Information Processing Society
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• v.7 no.8
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• pp.2555-2564
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• 2000

In this paper, a new unsupervised image segmentation algorithm is proposed. To model the contextual information presented in images, the characteristics of the Markov random fields (MRF) are utilized. Textured images are modeled as realizations of the stationary Gaussian MRF on a two-dimensional square lattice using the conditional autoregressive (CAR) equations with a second-order noncausal neighborhood. To detect boundaries, hypothesis tests over two masked areas are performed. Under the hypothesis, masked areas are assumed to belong to the same class of textures and CAR equation parameters are estimated in a minimum-mean-square-error (MMSE) sense. If the hypothesis is rejected, a measure of dissimilarity between two areas is accumulated on the rejected area. This approach produces potential edge maps. Using these maps, boundary detection can be performed, which resulting no micro edges. The performance of the proposed algorithm is evaluated by some experiments using real images as weB as synthetic ones. The experiments demonstrate that the proposed algorithm can produce satisfactorY segmentation without any a priori information.

• 전자공학회논문지 IE
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• v.43 no.2
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• pp.80-86
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• 2006

The wireless communication based on LDPC and adaptive spatial-subcarrier coded modulation using MQAM for orthogonal frequency division multiplexing (OFDM) wireless transmission by using instantaneous channel state information and employing multiple antennas at both the transmitter and the receiver. Adaptive coded modulation is a promising idea for bandwidth-efficient transmission on time-varying, narrowband wireless channels. On power limited Additive White Gaussian Noise (AWGN) channels, low density parity check (LDPC) codes are a class of error control codes which have demonstrated impressive error correcting qualities, under some conditions performing even better than turbo codes. The paper demonstrates OFDM with LDPC and adaptive modulation applied to Multiple-Input Multiple-Output (MIMO) system. An optimization algorithm to obtain a bit and power allocation for each subcarrier assuming instantaneous channel knowledge is used. The experimental results are shown the potential of our proposed system.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2013.10a
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• pp.704-707
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• 2013

This paper has analyzed the subthreshold swings for top and bottom gate voltages of asymmetric double gate(DG) MOSFET. The asymmetric DGMOSFET is four terminal device to be able to separately bias for top and bottom gates. The subthreshold swing, therefore, has to be analyze not only for top gate voltage, but also for bottom gate voltage. In the pursuit of this purpose, Poisson equation has been solved to obtain the analytical solution of potential distribution with Gaussian function, and the subthreshold swing model has been presented. As a result to observe the subthreshold swings for the change of top and bottom gate voltage using this subthreshold swing model, we know the subthreshold swings are greatly changed for gate voltages. Especially we know the conduction path has been changed for top and bottom gate voltage and this is expected to greatly influence on subthreshold swings.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2013.10a
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• pp.698-701
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• 2013

This paper has presented the change of subthreshold swings for gate oxide thickness of asymmetric double gate(DG) MOSFET, and solved Poisson equation to obtain the analytical solution of potential distribution. The symmetric DGMOSFET is three terminal device. Meanwhile the asymmetric DGMOSFET is four terminal device and can separately determine the bias voltage and oxide thickness for top and bottom gates. As a result to observe the subthreshold swings for the change of top and bottom gate oxide thickness, we know the subthreshold swings are greatly changed for gate oxide thickness. Especially we know the subthreshold swings are increasing with the increase of top and bottom gate oxide thickness, and top gate oxide thickness greatly influences subthreshold swings.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.18 no.12
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• pp.2939-2945
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• 2014

This paper has analyzed the change of threshold voltage for oxide structure of symmetric and asymmetric double gate(DG) MOSFET. The asymmetric DGMOSFET can be fabricated with different top and bottom gate oxide thickness, while the symmetric DGMOSFET has the same top and bottom gate oxide thickness. Therefore optimum threshold voltage is considered for top and bottom gate oxide thickness of asymmetric DGMOSFET, compared with the threshold voltage of symmetric DGMOSFET. To obtain the threshold voltage, the analytical potential distribution is derived from Possion's equation, and Gaussian distribution function is used as doping profile. We investigate for bottom gate voltage, channel length and thickness, and doping concentration how top and bottom gate oxide thickness influences on threshold voltage using this threshold voltage model. As a result, threshold voltage is greatly changed for oxide thickness, and we know the changing trend greatly differs with bottom gate voltage, channel length and thickness, and doping concentration.

• Bulletin of the Korean Chemical Society
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• v.30 no.12
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• pp.2962-2968
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• 2009

The photodissociation dynamics of 1,2-bromochloroethane ($C_2H_4BrCl$) was investigated near 234 nm. A two-dimensional photofragment ion-imaging technique coupled with a [2+1] resonance-enhanced multiphoton ionization scheme was utilized to obtain speed and angular distributions of the nascent Br($^2P_{3/2}$) and Br${\ast}($^2P_{1/2}$) atoms. The total translational energy distributions for the Br and Br${\ast}$ channels were well characterized by Gaussian functions with average translational energies of 100 and 84 kJ/mol, respectively. The recoil anisotropies for the Br and Br${\ast}$ channels were measured to be ${\beta}$ = 0.49 ${\pm}$ 0.05 for Br and 1.55 ${\pm}$ 0.05 for Br${\ast}$. The relative quantum yield for Br${\ast}$ was found to be ${\Phi}_{Br{\ast}}$ = 0.33 ${\pm}$ 0.03. The probability of nonadiabatic transition between A' states was estimated to be 0.46. The relevant nonadiabatic dynamics is discussed in terms of interaction between potential energy surfaces in Cs symmetry.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.16 no.5
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• pp.982-988
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• 2012

This paper has presented the relation of scaling theory and threshold voltage of double gate(DG) MOSFET. In the case of conventional MOSFET, current and switching frequency have been analyzed based on scaling theory. To observe the possibility of application of scaling theory for threshold voltage of DGMOSFET, the change of threshold voltage has been observed and analyzed according to scaling theory. The analytical potential distribution of Poisson equation has been used, and this model has been already verified. To solve Poisson equation, charge distribution such as Gaussian function has been used. As a result, it has been observed that threshold voltage is grealty changed according to scaling factor and change rate of threshold voltages is traced for scaling of doping concentration in channel. This paper has explained for the best modified scaling theory reflected the influence of two gates as using weighting factor when scaling theory has been applied for channel length and channel thickness.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.18 no.3
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• pp.657-662
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• 2014

This paper has analyzed the subthreshold swings for top and bottom gate voltages of asymmetric double gate(DG) MOSFET. The asymmetric DGMOSFET is four terminal device to be able to separately bias for top and bottom gates. The subthreshold swing, therefore, has to be analyze not only for top gate voltage, but also for bottom gate voltage. In the pursuit of this purpose, Poisson equation has been solved to obtain the analytical solution of potential distribution with Gaussian function, and the subthreshold swing model has been presented. As a result to observe the subthreshold swings for the change of top and bottom gate voltage using this subthreshold swing model, we know the subthreshold swings are greatly changed for gate voltages. Especially we know the conduction path has been changed for top and bottom gate voltage and this is expected to greatly influence on subthreshold swings.