• Proceedings of the Optical Society of Korea Conference
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• 2003.07a
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• pp.262-263
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• 2003

In this paper, Gaussian apodized volume grating for demultiplexer is implemented. A 22-channel demultiplexer based on that grating is optically demonstrated. The channel spacing, the interchannel cross-talk level and the channel uniformity of 0.8 nm, -30 dB and 1.5 dB, respectively, are obtained.(omitted)

• Journal of information and communication convergence engineering
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• v.9 no.6
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• pp.733-737
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• 2011

This paper has studied subthreshold characteristics for double gate(DG) MOSFET using Gaussian function in solving Poisson's equation. Typical two dimensional analytical transport models have been presented for symmetrical Double Gate MOSFETs (DGMOSFETs). Subthreshold swing and threshold voltage are very important factors for digital devices because of determination of ON and OFF. In general, subthreshold swings have to be under 100mV/dec, and threshold voltage roll-off small in short channel devices. These models are used to obtain the change of subthreshold swings and threshold voltage for DGMOSFET according to channel doping profiles. Also subthreshold swings and threshold voltages have been analyzed for device parameters such as channel length, channel thickness and channel doping profiles.

• Journal of the Optical Society of Korea
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• v.7 no.4
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• pp.269-274
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• 2003

In this paper, a Gaussian apodization technique applied to a transmission volume hologram for holographic demultiplexer is proposed. The Gaussian apodized grating of 15 mm ${\times}$ 11mm size, $38{\mu}m$ thickness and 3.2 mm horizontal standard deviation of the Gaussian index modulation profile was fabricated. A 22-channel demultiplexer based on that grating has been optically demonstrated. The channel spacing, the interchannel cross-talk level and the channel uniformity of 0.8 nm, -30 dB and 1.5 dB, respectively, were obtained.

• Journal of Digital Contents Society
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• v.8 no.4
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• pp.491-497
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• 2007

RPersonal area networking technology is becoming increasingly important in enabling useful wireless home applications. For example, Bluetooth and IEEE 802.11b standards are the most commonly deployed technologies for wireless home applications. However, because both standards share the same unlicensed ISM (Industrial, Scientific, Medical) radio spectrum, severe interference is inevitable and performance can be impaired significantly when heterogeneous devices using the two technologies come into close proximity. In this paper, we research Gaussian FSK Bluetooth system, which is an open specification technology for short-range wireless connectivity between electronic devices. In this paper, we analyzes the effects of co-channel interference on the performance of a Gaussian FSK Bluetooth system. Performance criteria used in the study are the signal to interference power ratio (SIR), interference index, and the bit error rate (BER) in the wireless channel. The effect of co-channel interference from various sources on the performance of a Gaussian FSK Bluetooth system is analyzed using an IGA(Impulsive Gaussian Approximation) method, and these quantities are plotted against Eb/No, $\rho$ and SIR for various channel conditions in figures.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.18 no.1
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• pp.123-128
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• 2014

This paper analyzed the change of subthreshold current for channel dimension of double gate(DG) MOSFET. The nano-structured DGMOSFET to reduce the short channel effect had to be preciously analyze. Poisson's equation had been used to analyze the potential distribution in channel, and Gaussian function had been used as carrier distribution. The subthreshold current had been analyzed for device parameters such as channel dimension, and projected range and standard projected deviation of Gaussian function. Since this potential model was verified in the previous papers, we used this model to analyze the subthreshold current. Resultly, we know the subthreshold current was influenced on parameters of Gaussian function and channel dimension for DGMOSFET.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.15 no.5
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• pp.91-103
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• 2015

This paper presents "The 3-User NOR switching channel based on interference decoding with receiver cooperation" in succession to "Jeju Jong Nang channel code I, II". The Jeju Jong Nang code is considered as one of the earliest human binary coded communication (HBCC) in the world with a definite "1" or "0" binary symbolic analysis of switching circuits. In this paper, we introduce a practical example of interference decoding with receiver cooperation based on the three user Jong Nang NOR switching channel. The proposed system models are the three user Jong Nang (TUJN) NOR logic switching on-off, three-user injective deterministic NOR switching channel and Gaussian interference channel (GIC) with receiver cooperation. Therefore, this model is well matched to Shannon binary symmetric and erasure channel capacity. We show the applications of three-user Gaussian interference decoding to obtain deterministic channels which means each receiver cooperation helps to adjacent others in order to increase degree of freedom. Thus, the optimal sum rate of interference mitigation through adjacent receiver cooperation achieves 7 bits.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2013.05a
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• pp.753-756
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• 2013

This paper analyzed the change of subthreshold current for channel dimension of double gate(DG) MOSFET. The nano-structured DGMOSFET to reduce the short channel effect had to be preciously analyze. Poisson's equation had been used to analyze the potential distribution in channel, and Gaussian function had been used as carrier distribution. The subthreshold current had been analyzed for device parameters such as channel dimension, and projected range and standard projected deviation of Gaussian function. Since this potential model was verified in the previous papers, we used this model to analyze the subthreshold current. Resultly, we know the subthreshold current was influenced on parameters of Gaussian function and channel dimension for DGMOSFET.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.18 no.8
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• pp.1136-1145
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• 1993

The channel capacities of various lading channels are calculated and compared with that of Gaussian noise channel to find out the decrements of channel capacity according to each fading environment. As a result, it is confirmed that the channel capacities in Rician and m-distribution fading channels approach to that of Gaussian noise channel as direct-to-indirect power ratio in Rician fading channel and fading index m in m-distribution fading channel increases respectively. And the difference between two channel capacities of Gaussian noise channel and each fading channel which is dependent on carrier-to-noise power ratio (CNR) is found. Also the improvement of channel capacity of Rayleigh fading channel by introducing two-branch diversities is obtained. For diversity reception, predetection maximal-ratio and postdetection selective combining techniques are adopted. The results show that the improvement of channel capacity by predetection maximal-ratio combining diversity is superior to the postdetection selective combining diversitiy regardless of correlation coefficient between two diversity branches in Raylelgh fading channel. The best improvement is achieved when two branches are noncorrelative in both two diversify techniques and as correlation coefficient of two diversity branches is smaller, the improvement of channel capacity is greater.

• Journal of Korea Multimedia Society
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• v.7 no.6
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• pp.781-790
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• 2004

This paper presents a fourth-order cumulants based iterative algorithm for blind channel equalization. It is robust with respect to the existence of heavy Gaussian noise in a channel and does not require the minimum phase characteristic of the channel. In this approach, the transmitted signals at the receiver are over-sampled to ensure the channel described by a full-column rank matrix. It changes a single-input/single-output (SISO) finite-impulse response (FIR) channel to a single-input/multi-output (SIMO) channel. Based on the properties of the fourth-order cumulants of the over-sampled channel outputs, the iterative algorithm is derived to estimate the deconvolution matrix which makes the overall transfer matrix transparent, i.e., it can be reduced to the identity matrix by simple reordering and scaling. Both a closed-form and a stochastic version of the proposed algorithm are tested with three-ray multi-path channels in simulation studies, and their performances are compared with a method based on conventional second-order cumulants. Relatively good results are achieved, even when the transmitted symbols are significantly corrupted with Gaussian noise.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.18 no.5
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• pp.1143-1148
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• 2014

This paper has analyzed the change of subthreshold swing for doping distribution function of asymmetric double gate(DG) MOSFET. The basic factors to determine the characteristics of DGMOSFET are dimensions of channel, i.e. channel length and channel thickness, and doping distribution function. The doping distributions are determined by ion implantation used for channel doping, and follow Gaussian distribution function. Gaussian function has been used as carrier distribution in solving the Poisson's equation. Since the Gaussian function is exactly not symmetric for top and bottome gates, the subthreshold swings are greatly changed for channel length and thickness, and the voltages of top and bottom gates for asymmetric double gate MOSFET. The deviation of subthreshold swings has been investigated for parameters of Gaussian distribution function such as projected range and standard projected deviation in this paper. As a result, we know the subthreshold swing is greatly changed for doping profiles and bias voltage.