• The Transactions of the Korean Institute of Electrical Engineers C
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• v.49 no.1
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• pp.59-63
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• 2000

For the Mo-tip field emitter array, the method by which the geometrical structure of the gate insulator wall could be modified in order to improve field emission properties(turn-on voltage and gate leakage current). The device having a gate insulator of complex shape, which means the combined geometrical structure with round shape made by wet etching and vertical shape made by dry etching processes, was fabricated and the field emission properties of the three kinds of devices were compared. As a result, the electric field applied to tip apex could be increased and gate leakage current could be decreased by employing the gate insulator having geometrical wall structure of mixed shape. Finally, the obtained empirical results were analyzed by simulation of electric field distribution at/near the tip apex and gate insulator using SNU-FEAT simulator.

• Journal of Korean Medical classics
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• v.28 no.4
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• pp.79-97
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• 2015

Objectives : To research origin of the shape of vital gate(命門) in Yixuerunmen makes us understand more exactly what the author, Li Chan(李梴) thought vital gate shaped. Methods : It's shape described in his book was compared with pictures portraying it in Hua Tuo Xuan Men Nei Zhao Tu(華陀玄門內照圖), one of references of his book. Results : He reasonably modified its passing track, while explaining it according to the paintings in Hua Tuo Xuan Men Nei Zhao Tu. Vital gate, as he thought, was not an real organ like the other five viscera, but a cord or a tube similar to blood vessels. He believed its cord had long connections from pericardium to terminal of urethra, which went through pericardium upward, right kidney downward, right around terminal rectum down-frontward, and urethra in parallel outward. Conclusions : He had consistent understandings for vital gate to penetrate several different viewpoints, as based on pictures in Hua Tuo Xuan Men Nei Zhao Tu.

• Journal of the Korean Vacuum Society
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• v.5 no.2
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• pp.113-118
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• 1996

Aligning a cathode tip at the center of a gate hole is important in gated filed emission devices. We have fabricated a silicon field emitter using a following process so that a cathode and a gate hole are automatically aligned . After forming silicon tips on a silicon wafer, the wafer was covered with the $SiO_2$, gate metal, and photoresistive(PR) films. Because of the viscosity of the PR films, a spot where cathode tips were located protruded above the surface. By ashing the surface of the PR film, the gate metal above the tip apex was exposed when other area was still covered with the PR film. The exposed gate metal and subsequenlty the $SiO_2$ layer were selectively etched. The result produced a field emitter in which the gate film was in volcano shape and the cathode tip was located at the center of the gate hole. Computer simulation showed that the volcano shape and the cathode tip was located at the center of the gat hole. Computer simulation showed that the volcano shape emitter higher current and the electron beam which was focused better than the emitter for which the gate film was flat.

• Transactions of Materials Processing
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• v.14 no.1 s.73
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• pp.49-56
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• 2005

In the semi-solid die casting process, an important thing is the flow behavior of semi-solid materials. The flow patterns of the semi-solid material can make the defects during die filling. To control the flow patterns is very important and difficult. In this paper, the flow behavior of the semi-solid A356 alloy material during die filing at various die gate shapes has been observed with the grain size controlled material. The effect of the gate shape on the die filling characteristics was investigated. The filling tests in each plunger stroke were experimented, and also simulated on the semi-solid material die casting process by MAGMAsoft. According to the filling tests and computer simulation, the effect of the gate shape on liquid segregation has been investigated.

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 2004.10a
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• pp.152-155
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• 2004

In the semi-solid die casting process, the important thing is the flow behaviors of semi-solid material. The flow patterns of semi-solid material can make the defects during die filling. To control of the flow patterns, is very important and difficult. In this paper, the flow behaviors of the semi-solid A356 alloy material during die filling at various die gate shapes has been observed with the grain size controlled material. The effects of the gate shape on the die filling characteristics were investigated. The filling tests in each plunger strokes were experimented, also simulated on the semi-solid material die casting process by MAGMAsofi. According to the filling tests and computer simulation, the effect of the gate shape on liquid segregation had been investigated.

• KCID journal
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• v.3 no.1
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• pp.10-19
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• 1996

A hydraulic model test was peformed for radial gate in estuary sulices to find out a proper bottom shape of gate which minimize the amplitudes of vibration. Firstly natural frequencies ore measured, and the results were compared with the numerical analysi

• Journal of the Institute of Electronics and Information Engineers
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• v.51 no.7
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• pp.71-81
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• 2014

In this paper, the performance variations of tri-gate FinFET are analyzed for different fin shapes and source/drain epitaxy types using a 3D device simulator(Sentaurus). If the fin shape changes from a rectangular shape to a triangular shape, the threshold voltage increases due to a non-uniform potential distribution, the off-current decreases by 72.23%, and the gate capacitance decreases by 16.01%. In order to analyze the device performance change from the structural change of the source/drain epitaxy, we compared the grown on the fin (grown-on-fin) structure and grown after the fin etch (etched-fin) structure. 3-stage ring oscillator was simulated using Sentaurus mixed-mode, and the energy-delay products are derived for the different fin and source/drain shapes. The FinFET device with triangular-shaped fin with etched-fin source/drain type shows the minimum the ring oscillator delay and energy-delay product.

• Journal of the Korean housing association
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• v.20 no.4
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• pp.1-9
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• 2009

In this study, an examination and an analysis are carried out on the forms and components of the access spaces of hotel entrances from the front gate of five star hotels in Jejudo, Korea. The results of the study are as follows. In terms of the arrangement of the hotel, city hotels with a relatively narrow site area are influenced by site shape, while resort hotels with a relatively wide site area are affected by the environment. However, the location of the front gate was determined by the access road from the outside. Therefore, forms of access space are related to the front gate, which is governed by the access road, and to the entrance, which is determined by the hotel arrangement. If the front gate is in line with the hotel entrance, a straight line and the hotel are arranged vertically to the front gate(side arrangement) or the hotel is arranged horizontally to the front gate, but if the entrance is not in line with the front gate, it appears as a curved shape. However, those who use their own cars have a variety of choices for access route depending on the location of the parking lot.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.21 no.9
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• pp.1400-1413
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• 1997

Semi-solid forging(SSF) process of A356 aluminium alloy has been studied to assess the effect of process variables on the component integrity. Semi-solid material(SSM) was fabricated by mechanical and electro-magnetic stirring process. The fabricated SSM by using mechanical stirring process has been carried out on cooling rate of 0.022.deg. C/sec 0.0094.deg. C/sec and stirring speed n=600, 1000 rpm, respectively. The fabricated SSM by using electro-magnetic stirring process is supplied by Pechiney. The holding time and temperature in the semi-solid state before forging also affects the globular microstructure of alloy. Therefore, the influence of these two parameters is discussed in terms of the microstructure of alloy. The SSF process has been conducted with three different die temperatures($T_{die}$=250.deg. C, 300.deg. C, 350.deg. C) and two kinds of gate types(straight gate and orifice gate). This paper is to investigate the influence of gate shapes of die on filling phenomena in SSF process more deeply. The mechanical properties of forged components were also investigated for variation of process conditions such as die temperature, gate shape and SSM.

• Journal of information and communication convergence engineering
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• v.10 no.2
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• pp.200-204
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• 2012

This study has presented the analysis of breakdown voltage for a double-gate metal-oxide semiconductor field-effect transistor (MOSFET) based on the doping distribution of the Gaussian function. The double-gate MOSFET is a next generation transistor that shrinks the short channel effects of the nano-scaled CMOSFET. The degradation of breakdown voltage is a highly important short channel effect with threshold voltage roll-off and an increase in subthreshold swings. The analytical potential distribution derived from Poisson's equation and the Fulop's avalanche breakdown condition have been used to calculate the breakdown voltage of a double-gate MOSFET for the shape of the Gaussian doping distribution. This analytical potential model is in good agreement with the numerical model. Using this model, the breakdown voltage has been analyzed for channel length and doping concentration with parameters such as projected range and standard projected deviation of Gaussian function. As a result, since the breakdown voltage is greatly changed for the shape of the Gaussian function, the channel doping distribution of a double-gate MOSFET has to be carefully designed.