• Journal of the Korean Society for Precision Engineering
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• v.18 no.1
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• pp.89-97
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• 2001

A microgyroscope, which vibrates in two orthogonal axes on the substrate plane, is designed and fabricated. The shuttle mass of the vibrating gyroscope consists of two parts. The one is outer shuttle mass which vibrates in driving mode guided by four folded springs attached to anchors. And the other is inner shuttle mass which vibrates in driving mode as the outer frame does and also can vibrate in sensing mode guided by four folded springs attached to the outer shuttle mass. Due to the directions of vibrating mode, it is possible to fabricate the gyroscope with simplified process by using polysilicon on insulator structure. Fabrication processes of the microgyroscope are composed of anisotropic silicon etching by RIE, gas-phase etching (GPE) of the buried sacrificial oxide layer, metal electrode formation. An eletromechanical model of the vibrating microgyroscope was modeled and bandwidth characteristics of the gyroscope operates at DC 4V and AC 0.1V in a vacuum chamber of 100mtorr. The detection circuit consists of a discrete sense amplifier and a noise canceling circuit. Using the evaluated electromechanical model, an operating condition for high performance of the gyroscope is obtained.

• Transactions on Electrical and Electronic Materials
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• v.16 no.2
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• pp.90-94
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• 2015

In this study, the characterizations of oxide contact hole etching are investigated with C₄F₈/O₂/Ar and CH₂F₂/C₄F₈/O₂/ Ar plasma. As the percent composition of C₄F₈ in a C₄F₈/O₂/Ar mixture increases, the amount of polymer deposited on the etched surface also increases because the C_xF_y polymer layer retards the reaction of oxygen atoms with PR. Adding CH₂F₂ into the C₄F₈/O₂/Ar plasma increases the etch rate of the oxide and the selectivity of oxide to PR. The profile of contact holes was close to 90°, and no visible residue was seen in the SEM image at a C₄F₈/(C₄F₈+O₂) ratio of 58%. The changes of chemical composition in the chamber were analyzed using optical emission spectroscopy, and the chemical reaction on the etched surface was investigated using X-ray photoelectron spectroscopy.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.383-383
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• 2010

Gas-phase hydrogen atoms create a variety of chemical and physical phenomena on Si surfaces: adsorption, abstraction of pre-adsorbed H, Si etching, Si amorphization, and penetration into the bulk lattice. Thermal desorption/evolution analyses exhibited three distinct peaks, including one from the crystalline bulk. It was previously found that thermal-energy gaseous H(g) atoms penetrate into the Si(100) crystalline bulk within a narrow substrate temperature window(centered at ~460K) and remain trapped in the bulk lattice before evolving out at a temperature as high as ~900K. Developing and sustaining atomic-scale surface roughness, by H-induced silicon etching, is a prerequisite for H absorption and determines the $T_s$ windows. Issues on the H(g) absorption to be further clarified are: (1) the role of the detailed atomic surface structure, together with other experimental conditions, (2) the particular physical lattice sites occupied by, and (3) the chemical nature of, absorbed H(g) atoms. This work has investigated and compared the thermal H(g) atom absorptivity of Si(100), Si(111) and Si(110) samples in detail by using the temperature programmed desorption mass spectrometry (TPD-MS). Due to the differences in the atomic structures of, and in the facility of creating atom-scale etch pits on, Si(100), (100) and (110) surfaces, the H-absorption efficiency was found to be larger in the order of Si(100) > Si(111) > Si(110) with a relative ratio of 1 : 0.22 : 0.045. This intriguing result was interpreted in terms of the atomic-scale surface roughening and kinetic competition among H(g) adsorption, H(a)-by-H(g) abstraction, $SiH_3(a)$-by-H(g) etching, and H(g) penetraion into the crystalline silicon bulk.

• Korean Journal of Materials Research
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• v.16 no.2
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• pp.85-91
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• 2006

The fraction of $\varepsilon\;and\;\gamma$'-iron nitride in compound layer is predicted by x-ray diffraction using direct comparison method. The validity of formulation models was checked by comparing calculated results with metallographic analysis of iron nitride compound layer grown on steel S45C by gas nitriding. The fraction of $\varepsilon$ calculated by the three phase model, porous-$Fe_3N$/ dense-$Fe_3N$/ mixed layer with $Fe_3N\;and\;Fe_4N$, is 80 percent of that analyzed by etching technique. The $\varepsilon$ fraction predicted by mixed layer model is 122 percent of that measured by microscope.

• Journal of Surface Science and Engineering
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• v.42 no.5
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• pp.216-219
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• 2009

A surface acoustic wave (SAW) filter structure was fabricated employing $4{\mu}m$ thick nanocrystalline diamond (NCD) and $2.2{\mu}m$ thick ZnO films on Si wafer. The NCD film was deposited in an $Ar/CH_4$ gas mixture by microwave plasma chemical vapor deposition method. The ZnO film was formed over the NCD film in an RF magnetron sputter using ZnO target and $Ar/O_2$ gas. On the top of the two layers, copper film was deposited by the RF sputter and inter digital transducer (IDT) electrode pattern (line/space : $1.5/1.5{\mu}m$) was defined by the photolithography including a lift-off etching process. The fabricated SAW filter exhibited the center frequency of 1.66 GHz and the phase velocity of 9,960 m/s, which demonstrated that a giga Hertz SAW filter can be realized by utilizing the nanocrystalline diamond thin film.

• Korean Journal of Crystallography
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• v.7 no.2
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• pp.175-182
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• 1996

ZnO thin films were deposited on Corning 7059 glass substrates to study fundamental properties of films. According to the experimental results, (002) preferred ZnO thin films were grown by purging Ar/O2 mixed gas, but not without oxygen gas. The structure and the orientation of ZnO thin films were much affected by the substrate temperature and rf power. High quality ZnO films were obtained by increasing their values. Optimum deposition parameters were : 300W rf power, 300℃ substrate temperature, Ar/O2=70/30. To characterize SAW propagation properties, IDT was fabricated by etching Al films deposited on diamond/Si wafer with RIE. Measured λ(wavelength) was 24μm and experimental results were well matched with simulation. Center frequency was 250MHz, and the calculated phase velocity of ZnO/ diamond structure was about 6000m/s.

• Textile Coloration and Finishing
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• v.1 no.1
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• pp.7-18
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• 1989

The distinguishing characteristic of the glow discharge is that chemical reaction induced by partially ionized gases are limited only to the substrate surface. Most studies have been done on the plasma etching and polymerization. The graft polymerization in vapour phase by cold plasma has been rarely investigated. In this study the system of tub3ar reaction chamber with capacitively coupled electrode of alternative current of 60 Hz was employed for the graft polymerization. The graft polymerization of Acylic Acid(AA) onto the poly (ethylene terephthalate) (PET) was carried out by treatment of PET film and fabric by cold plasma (glow discharge of argon gas), followed by the supply of AA vapour. The graft yield was about 1 wt%. The surface property was determined by contact angle, the surface tension was evaluated by zisman’s plot and equation of surface tension mesurement. The results were as follows: 1. In order to obtain lower contact angle, it was effective to avoid the vicinity of electrodes for a setting position of substrate. 2. Contact angle affected on the monomer pressure and its duration of exposure to the acid vapour. 3. Polymer radical formation was influenced by the changes of the value of current density and plasma treatment time. 4. Total surface tension of plasma grafted PET film increased. With an increase in the carboxylic acid content, the dispersion force decreased, while, the polar force and hydrogen bonding force increased. 5. The contact angle decreased from $75^\circ$ to around $30^\circ$ by plasma grafting. There was no ageing effect on the contact angle after 4 months.

• Membrane Journal
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• v.32 no.3
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• pp.198-208
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• 2022

Membrane can selectively separate various substances such as organic substances, liquids, solutes, vapors, gases, ions or electrons according to the separation technology and various uses. Membranes are largely divided into symmetric membranes and asymmetric membranes, and classified into porous and nonporous structure depending on the presence or absence of pores. Also, the interface of the membrane may be molecularly uniform, or chemically or physically non-uniform. Preparation techniques include melt extrusion, stretching, template leaching, track-etching, solution casting, phase inversion, and solution coating method. The prepared membrane can be applied to various applications such as microfiltration, ultrafiltration, nanofiltration, reverse osmosis, gas separation and energy fields. This review provides a tutorial on how to prepare membranes according to the classification and types.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.36D no.7
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• pp.17-25
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• 1999

Tungsten nitride($WN_x$) films were deposited by PECVD method on silicon nitride($WSi_3N_4$) substrate. The characteristics of $WN_x$ film were investigated with changing various processing parameters ; substrate temperature, gas flow rate, rf power, and different nitrogen sources. The nitrogen composition in $WN_x$ film varied from 0 to 45% according to the $NH_3$ and $N_2$ flow rate. The highest deposition rate of 160 nm/min was obtained for the $NH_3$ gas and relatively low deposition rate of $WN_x$ films were formed by $N_2$ gas. $WN_x$ films deposited on $WSi_3N_4$ substrate had higher deposition rate than that of TiN and Si substrates. The purity of $WN_x$ film were analyzed by AES and higher purity $WN_x$ films were deposited using $NH_3$ gas. The XRD analysis indicates a phase transition from polycrystalline tungsten(W) to amorphous tungsten nitride($WN_x$), showing improved etching profile of $WN_x$ films Thick $WN_x$ films were deposited on various substrates such as Tin, NiCr and Al and maximum thickness of $1.6 {\mu}m$ was obtained on the Al adhesion layer.

• Journal of Surface Science and Engineering
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• v.42 no.6
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• pp.267-271
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• 2009

Multicomponent transparent conducting oxide films were deposited on glass substrates at 150 by dual magnetron sputtering of AZO and ITO targets. In the case of mixing a limited amount of ITO (10W), resistivity of TCO films was significantly increased compared to the AZO film; from $3.5{\times}10^{-3}$ to $9.7{\times}10^{-3}{\Omega}{\cdot}cm$. Deterioration of the electrical conductivity is attributed to the decreases in carrier concentration and Hall mobility. Improvement of the conductivity could be obtained for the films prepared with ITO powers larger than 40 W. The lowest resistivity ($\rho$) of $7.3{\times}10^{-4}{\Omega}{\cdot}cm$ was achieved when ITO power was 100 W. Effects of $H_2$ incorporation on the electrical and optical properties of AZO-ITO films were investigated in this work. Addition of small amount of hydrogen resulted in the increase of carrier concentration and the improvement of electrical conductivity. It is apparent that the roughness of AZO-ITO films decreases dramatically after the transition of microstructure from polycrystalline to amorphous phase, which gives practical advantages such as an excellent uniformity of surface and a high etching rate. AZO-ITO films grown at sputtering ambient with hydrogen gas are expected to be applicable to optoelectronic devices such as organic light emitting diodes and flexible displays due to their sufficient electrical and structural properties.