• Journal of the Korean institute of surface engineering
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• v.37 no.4
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• pp.191-195
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• 2004

Gallium or sulphur additions in $CuInSe_2$ were prepared using RF magnetron sputtering and pulsed laser deposition respectively. All of the observed thin films shows a chalcopyrite structure with the S and Ga addition increases the favourable (112) peak. The optical absorption coefficients were slightly decreased. The energy band gap of films could be shifted from 1.04 to 1.68 eV by adjusting the mole ratio of S/(S+Se) and Ga/(In+Ga). It is possible to obtain the optimum energy band gap by adding S or Ga solute at a certain ratio in favour of Se and In respectively. It is also necessary to control the ratio of Ga and S additions and to retain a certain portion of In and Se to provide better properties of thin films.

• Nuclear Medicine and Molecular Imaging
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• v.43 no.4
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• pp.330-336
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• 2009

Purpose: We established radiolabeling conditions of NOTA and DOTA with a generator-produced PET radionuclide $^{68}$Ga and studied in vitro characteristics such as stability, serum protein binding, octanol/water distribution, and interference with other metal ions. Materials and Methods: Various concentrations of NOTA 3HCl and DOTA 4HCl were labeled with 1 mL $^{68}$GaCl$_3$ (0.18$\sim$5.75 mCi in 0.1 M HCl in various pH. NOTA 3HCl (0.373 mM) was labeled with $^{68}$GaCl$_3$(0.183$\sim$0.232 mCi/0.1 M HCl 1.0 mL) in the presence of CuCl$_2$, FeCl$_2$, InCl$_3$, FeCl$_3$, GaCl$_3$, MgCl$_2$ or CaCl$_2$ (0$\sim$6.07 mM) at room temperature. The labeling efficiencies of $^{68}$Ga-NOTA and $^{68}$Ga-DOTA were checked by ITLC-SG using acetone or saline as mobile phase. Stabilities, protein bindings, and octanol distribution coefficients of the labeled compounds also were investigated. Results: $^{68}$Ga-NOTA and $^{68}$Ga-DOTA were labeled optimally at pH 6.5 and pH 3.5, respectively, and the chelates were stable for 4 hr either in the reaction mixture at room temperature or in the human serum at 37$^{\circ}C$. NOTA was labeled at room temperature while DOTA required heating for labeling. $^{68}$Ga-NOTA labeling efficiency was reduced by CuCl$_2$, FeCl$_2$, InCl$_2$, FeCl$_3$ or CaCl$_3$, however, was not influenced by MgCl$_2$ or CaCl$_2$. The protein binding was low (2.04$\sim$3.32%). Log P value of $^{68}$Ga-NOTA was -3.07 indicating high hydrophilicity. Conclusion: We found that NOTA is a better bifunctional chelating agent than DOTA for $^{68}$Ga labeling. Although, $^{68}$Ga-NOTA labeling is interfered by various metal ions, it shows high stability and low serum protein binding.

• Transactions on Electrical and Electronic Materials
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• v.15 no.2
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• pp.66-68
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• 2014

Most commercial white LED lamps use blue chip coated with yellow emitting phosphor. The use of blue excitable red and green phosphors is expected to improve the CRI. Several phosphors, such as $SrGa_2S_4:Eu^{2+}$ and $(Sr,Ba)SiO_4:Eu^{2+}$, have been suggested in the past as green components. However, there are issues of the sensitivity and stability of such phosphors. Here, we describe gallium substituted $YAG:Ce^{3+}$ phosphor, as a green emitter. YAG structures are already accepted by the industry, for their stability and efficiency. LEDs with improved CRI could be fabricated by choosing $Y_3Al_4GaO_{12}:Ce^{3+}$ (green and yellow), and $SrS:Eu^{2+}$ (red) phosphors, along with blue chip. Also, the effect of a slight change in chip wavelength is studied, for two phosphor-coated w-LEDs. The reduction in particle size of the coated phosphors also gives improved w-LED characteristics.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.29-32
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• 1999

$GaF_3$ films were directly grown on p' and p-type GaAs(100) substrates using a $SF_6$ plasma discharge system. GaAs MIS(Meta1-Insulator-Semiconductor) capacitor was successfully fabricated for about 1 hour at temperature $290^{\circ}C$ using the as-grown $GaF_3$ films. The as-grown films on p'-GaAs exhibited a current density of less than 6.68 $\times$ $1O^{-9}$ A/$cm^2$ at a breakdown field of 500kV/cm and a refractive index of 2.0 ~ 2.3 at a wavelength of 632.8 nm. The dielectric constant was about 5 derived from 1 MHz capacitance-voltage (C-V) measurements. Dielectric dispersion of the fluoridated films on p'-GaAs measured ranged from 100 Hz to 10 MHz was not observed.