• ETRI Journal
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• v.43 no.5
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• pp.909-915
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• 2021

GaAs on Si grown via metalorganic chemical vapor deposition is demonstrated using various Si substrate thicknesses and three types of dislocation filter layers (DFLs). The bowing was used to measure wafer-scale characteristics. The surface morphology and electron channeling contrast imaging (ECCI) were used to analyze the material quality of GaAs films. Only 3-㎛ bowing was observed using the 725-㎛-thick Si substrate. The bowing shows similar levels among the samples with DFLs, indicating that the Si substrate thickness mostly determines the bowing. According to the surface morphology and ECCI results, the compressive strained indium gallium arsenide/GaAs DFLs show an atomically flat surface with a root mean square value of 1.288 nm and minimum threading dislocation density (TDD) value of 2.4×10⁷ cm^-2. For lattice-matched DFLs, the indium gallium phosphide/GaAs DFLs are more effective in reducing the TDD than aluminum gallium arsenide/GaAs DFLs. Finally, we found that the strained DFLs can block propagate TDD effectively. The strained DFLs on the 725-㎛-thick Si substrate can be used for the large-scale integration of GaAs on Si with less bowing and low TDD.

• Solar Energy
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• v.8 no.2
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• pp.73-76
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• 1988

Thick films based on the mature crystalline silicon technology are expected to exhibit eversmaller cost reduction. The thin-film-based technology is, however, expected to exhibit a much sharper drop in cost as it develops. In this report, technology and recent R & D of thin film solar cell, such as amorphous silicon, cadnium telluride, copper indium diselenide and gallium arsenide, are described. Perspectives of world photovoltaic market and solar cell price are also described.

• Journal of Preventive Medicine and Public Health
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• v.32 no.4
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• pp.467-472
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• 1999

Objectives: This study was conducted to evaluate the cytotoxicity of gallium arsenide(GaAs), indium phosphide(InP) and indium arsenide(InAs) all of which are used a$ the semiconductor eletments in semiconductor industry. Methods: Cytotoxicity id the alveolar macrophage was evaluated by the measurement of in vitro magnetometry, LDH release assay and histological examination. Results: The relaxation curves by the in vitro magnetometry showed that GaAs has the cytotoxicity for the alveolar macrophage which is more significant in the higher dosages, while this cytotoxicity is not appeared in the groups added with InP or InAs or PBS. In the decay constant for two minutes after magnetization, GaAs-added groups showed a significant decrease with increasing doses, but both InP- and InAs-added groups did not show any significance. The LDH release assay showed a dose-dependent increasing tendency in the GaAs-, InP- and InAs-added groups. In terms of cellular morphological changes, GaAs-added groups revealed such severe cellular damages as prominent destructions in cell membranes and their morphological changes of nucleus, while InP- and InAs-added groups remained intact in intracellular structures, except for cytoplasmic degenerations. Conclusions: It is suggested that GaAs is more influential to cytotoxicity of alveolar macrophages than InP and InAs.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.1
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• pp.12-17
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• 1998

The heteroepitaxial growth of InP and GaInAs on GaAs substrates has been studied by using a new combination of source materials: ethyldimethylindium (EDMIn) and trimethylgallium (TMGa) as group III sources, and tertiarybutylarsine (TBAs) and tertiarybutylphosphine (TBP) as group V sources. Device quality InP heteroepitaxial layers were obtained by using a two-step growth process under atmospheric pressure, involving a growth of an initial nucleation layer at low temperature followed by high temperature annealing and the deposition of epitaxial layer at a growth temperature. The continuity and thickness of nucleation layer were important parameters. The InP layers deposited at 500$^{\circ}$- 55$0^{\circ}C$ are all n-type, and the electron concentration decreases with decreasing TBP/EDMIn molar ratio. The excellent optical quality was revealed by the 4.4 K photoluminescence (PL) measurement with the full width at half maximum (FWHM) of 4.94 meV. Epitaxial Ga\ulcorner\ulcorner\ulcornerIn\ulcorner\ulcorner\ulcornerAs layers have been deposited on GaAs substrates at 500$^{\circ}$ - 55$0^{\circ}C$ by using InP buffer layers. The composition of GaInAs was determined by optical absorption measurements.

• Journal of the Korean Vacuum Society
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• v.21 no.5
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• pp.264-272
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• 2012

In this paper, we report THz generation and detection characteristics investigated by InGaAs semiconductor epilayers, as results of a basic study obtained from the InGaAs-based THz transmitter/receiver (Tx/Rx). High-temperature and low-temperature (LT) grown InGaAs epilayers were prepared by the molecular beam epitaxy technique for the characterization of THz generation and detection, respectively, and the surface emission based on the photo-Dember effect was tried for THz generation. THz wave was generated by irradiation of a Ti:Sapphire fs pulse laser (60 ps/83 MHz), and a LT-GaAs Rx was used for the THz detection. The frequency band shown in the spectral amplitudes Fourier-transformed from the measured current signals was ranging in 0.5~2 THz, and the signal currents were exponentially increased with the Tx beam power. The THz detection characteristics of LT-InGaAs were investigated by using an Rx with dipole (5/20 ${\mu}m$) antenna, and the cutoff frequency was ~2 THz.

• Journal of The Korean Society of Grassland and Forage Science
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• v.33 no.3
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• pp.177-184
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• 2013

This work was conducted to assess the use of Near-infrared reflectance spectroscopy (NIRS) as a technique to analyze nutritional constituents of Distillers dried grain with solubles (DDGS) and corn quickly and accurately, and to apply an NIRS-based indium gallium arsenide array detector, rather than a NIRS-based scanning system, to collect spectra and induce and analyze calibration equations using equipment which is better suited to field application. As a technique to induce calibration equations, Partial Least Squares (PLS) was used, and for better accuracy, various mathematical transformations were applied. A multivariate outlier detection method was applied to induce calibration equations, and, as a result, the way of structuring a calibration set significantly affected prediction accuracy. The prediction of nutritional constituents of distillers dried grains with solubles resulted in the following: moisture ($R^2$=0.80), crude protein ($R^2$=0.71), crude fat ($R^2$=0.80), crude fiber ($R^2$=0.32), and crude ash ($R^2$=0.72). All constituents except crude fiber showed good results. The prediction of nutritional constituents of corn resulted in the following: moisture ($R^2$=0.79), crude protein ($R^2$=0.61), crude fat ($R^2$=0.79), crude fiber ($R^2$=0.63), and crude ash ($R^2$=0.75). Therefore, all constituents except for crude fat and crude fiber were predicted for their chemical composition of DDGS and corn through Near-infrared reflectance spectroscopy.

• Journal of Animal Environmental Science
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• v.20 no.3
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• pp.117-124
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• 2014

The objectives were to assess the use of near-infrared reflectance spectroscopy (NIRS) as a tool for estimating nutrient compositions of corn kernel, and to apply an NIRS-based indium gallium arsenide array detector to the system for collecting spectra and analyzing calibration equations using equipments designed for field application. Partial Least Squares Regression (PLSR) was employed to develop calibration equations based on representative data sets. The kennard-stone algorithm was applied to induce a calibration set and a validation set. As a result, the method for structuring a calibration set significantly affected prediction accuracy. The prediction of chemical composition of corn kernel resulted in the following (kennard-stone algorithm: relative) moisture ($R^2=0.82$, RMSEP=0.183), crude protein ($R^2=0.80$, RMSEP=0.142), crude fat ($R^2=0.84$, RMSEP=0.098), crude fiber ($R^2=0.74$, RMSEP=0.098), and crude ash ($R^2=0.81$, RMSEP=0.048). Result of this experiment showed the potential of NIRS to predict the chemical composition of corn kernel.

• Korean Journal of Optics and Photonics
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• v.35 no.2
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• pp.61-70
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• 2024

We demonstrate a laser power meter calibration system based on 12-diode laser sources coupled to single-mode fibres in a wavelength range from 400 to 1,600 nm. In our system, three laser power controllers ensure that the output power uncertainty of all laser sources is less than 0.1% (k=2). In addition, all laser beams are adjusted to have similar beam sizes of approximately 2 mm (1/e²-width) at the measurement position to minimise unmeasured laser power on a detector. As a reference detector, we use an integrating sphere combined with silicon and indium gallium arsenide photodiodes to minimise the non-uniformity and non-linearity of responsivity. The minimum uncertainty of the calibration system is estimated to be 1.1% (k=2) for most laser wavelengths.

• Journal of the Korean Vacuum Society
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• v.22 no.1
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• pp.37-44
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• 2013

In order to investigate an influence of carrier trap by quantum dots (QDs) on the solar parameters, in this study, the $p^+-QD-n/n^+$ solar cells with InAs/GaAs QD active layers are fabricated, and their characteristics are investigated and compared with those of a GaAs matrix solar cell (MSC). Two different types of QD structures, the Stranski-Krastanow (SK) QD and the quasi-monolayer (QML) QD, have been introduced for the QD solar cells, and the parameters (open-circuit voltage ($V_{OC}$), short-cirucuit current ($I_{SC}$), fill factor (FF), conversion efficiency (CE)) are determined from the current-voltage characteristic curves under a standard solar illumination (AM1.5). In SK-QSC, while FF of 80.0% is similar to that of MSC (80.3%), $V_{OC}$ and $J_{SC}$ are reduced by 0.03 V and $2.6mA/cm^2$, respectively. CE is lowered by 2.6% as results of reduced $V_{OC}$ and $J_{SC}$, which is due to a carrier trap into QDs. Though another alternative structure of QML-QD to be expected to relieve the carrier trap have been firstly tried for QSC in this study, it shows negative results contrary to our expectations.

• Journal of Veterinary Clinics
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• v.30 no.5
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• pp.346-352
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• 2013

The study was aimed to investigate the influence of diode laser on osteoarthritis (OA) of stifle joint induced by anterior cruciate ligament transection (ACLT). Sixty 10-week-old male Sprague-Dawley rats were used in this study. Right stifle joint was operated to create ACLT or sham. There were five study groups: control, Sham, ACLT, ACLT + Laser irradiation (ACLT+L) and ACLT + meloxicam administration (ACLT+M). Low-level laser therapy (LLLT) was applied at the operated stifle joint twice a week using an 808-nm indium-gallium-arsenide (InGaAs) diode laser during 8-week experimental period. Radiographical, gross morphological and histopathological findings were examined at 2, 4 and 8 weeks post-surgery. Radiography, CBC and chemistry tests showed no significant difference between groups. ACLT+L group showed remarkable cartilage damages compared with sham group morphologically and histopathologically at 2, 4 and 8 weeks after surgery. ACLT+M group also had more cartilage damages compared with sham group. Low-level laser therapy (LLLT) showed limitation to prevent progression of OA in the rat anterior cruciate ligament transection models; on the contrary it accelerated cartilage damage. It is assumed that the aggravating results of LLLT in this study might be due to excessive unstable movement of stifle joint from the pain-relieving effect of LLLT, rather than direct damaging effect of irradiation since LLLT did not affect cell viability.