• Journal of the Institute of Electronics Engineers of Korea SD
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• v.40 no.11
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• pp.83-94
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• 2003

In this paper. a highly linear and low glitch CMOS current mode digital-to-analog converter (DAC) by self calibration bias circuit is proposed. The architecture of the DAC is based on a current steering 6＋4 segmented type and new switching scheme for the current cell matrix, which reduced non-linearity error and graded error. In order to achieve a high performance DAC . novel current cell with a low spurious deglitching circuit and a new inverse thermometer decoder are proposed. The prototype DAC was implemented in a 0.35${\mu}{\textrm}{m}$ n-well CMOS technology. Experimental result show that SFDR is 60 ㏈ when sampling frequency is 32MHz and DAC output frequency is 7.92MHz. The DAC dissipates 46 mW at a 3.3 Volt single power supply and occupies a chip area of 1350${\mu}{\textrm}{m}$ ${\times}$750${\mu}{\textrm}{m}$.

• Journal of the Institute of Electronics and Information Engineers
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• v.52 no.9
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• pp.63-73
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• 2015

This work proposes a 2-channel time-interleaved (T-I) 10b 120MS/s pipeline SAR ADC minimizing offset mismatch between channels without any calibration scheme. The proposed ADC employs a 2-channel SAR and T-I topology based on a 2-step pipeline ADC with 4b and 7b in the first and second stage for high conversion rate and low power consumption. Analog circuits such as comparator and residue amplifier are shared between channels to minimize power consumption, chip area, and offset mismatch which limits the ADC linearity in the conventional T-I architecture, without any calibration scheme. The TSPC D flip-flop with a short propagation delay and a small number of transistors is used in the SAR logic instead of the conventional static D flip-flop to achieve high-speed SAR operation as well as low power consumption and chip area. Three separate reference voltage drivers for 4b SAR, 7b SAR circuits and a single residue amplifier prevent undesirable disturbance among the reference voltages due to each different switching operation and minimize gain mismatch between channels. High-frequency clocks with a controllable duty cycle are generated on chip to eliminate the need of external complicated high-frequency clocks for SAR operation. The prototype ADC in a 45nm CMOS technology demonstrates a measured DNL and INL within 0.69LSB and 0.77LSB, with a maximum SNDR and SFDR of 50.9dB and 59.7dB at 120MS/s, respectively. The proposed ADC occupies an active die area of 0.36mm2 and consumes 8.8mW at a 1.1V supply voltage.