• ETRI Journal
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• v.17 no.1
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• pp.1-10
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• 1995

We have achieved very low threshold current densities with high light output powers for InGaAs/ GaAs surface-emitting lasers using a periodic gain active structure in which three quantum wells are inserted in two-wavelength-thick (2${\lambda}$ ) cavity. Air-post type devices with a diameter of 20~40${\mu}m$ exhibit a threshold current density of 380~410$A/cm^2$. Output power for a 40${\mu}m$ diameter device reaches over 11 mW. A simple theoretical calculation of the threshold and power performances indicates that the periodic gain structure has an advantage in achieving low threshold current density mainly due to the high coupling efficiency between gain medium and optical field. The deterioration of power, expected from the long cavity length of $2{\lambda}$, is negligible.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.42 no.12
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• pp.1-8
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• 2005

In this paper, we study a call admission control algorithm for supporting multicast service under the BcN environment where broadcasting, communication and Internet are converging to be one. It is necessary to control service requests with a certain criteria in order to guarantee QoS because the system capacity is limited. As a possible solution, we divide one multicast service into 3 classes and set up a threshold per each class to control service request. Especially, for the purpose of system benefit, we define system pay-off rate 'GAIN' with the term 'Reward' and 'Penalty' according to admit and reject service request. And we confine the range of threshold which makes GAIN to be maximized. For the performance analysis, we model the system as M/M/m/m queueing system, investigate GAIN under various conditions and show the effectiveness of the proposed algorithm.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.19 no.3
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• pp.591-596
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• 1994

Threshold dependence on stripe width in gain-guided single quantum well lasers has been examined by complex domain effective index method. It is found, in narrow stripe regime, that the lateral optical confinement estimated by newly introduced parameters decreases very rapidly as the transverse optical confinement factor decreases. Thus, in a single quantum well laser with a usually very small, the optical confinement may become very poor depending on stripe width not only in the transverse but also in the lateral direction, further enhancing the gain saturation and often leading to an anomalously high threshold current. The understanding of rather anomalous threshold dependence on stripe width will be very important in optimization of quantum well laser diode structure.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.4
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• pp.101-108
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• 1998

We examine experimentally the dependence of output width on DC bias, RF power, and RF frequency in a gain-switched semiconductor laser. The optimum short pulses are obtained around threshold DC bias. The DC bias to generatoe shorter pulses decreases the RF power increases, whereas it increases to above threshold as the RF freqnecy increases. The pulse width becomes less sensitive to the variations of the DC bias, as the RF bias, or frquency increases.

• Transactions of the Korean Society of Automotive Engineers
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• v.5 no.1
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• pp.186-194
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• 1997

The objective of this study is to develope knock control algorithms which can increase engine power without causing frequent knock occurrence. A four cylinder spark-ignition engine is used for the experiments to develop knock control algorithms which use block vibration signals. Knock occurrence is detected accurately by using knock threshold values which consider the difference of transmission path of each cylinder. Spark timing is controlled both simultaneously and individually. With the simultaneous control, torque gain is achieved by retarding the spark timing on knock occurrence in propotion to the knock intensity. The individual knock control algorithm results in higher torque gain than the simultaneous knock control algorithm. The knock occurrence frequency of the individual knock control algorithm is about twice the value of the simultaneous knock control algorithm results. Both control algorithms give similar torque gain of about 3% when they are optimized.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.36D no.7
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• pp.80-91
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• 1999

We present various optimal grating structures which give the low threshold gain, good modulation characteristics, small effective linewidth enhancement factor, and large fabrication tolerance in complex-coupled MQW DFB lasers with absorptive gratings. To obtain these, we calculate the complex coupling coefficients using the extended additional layer method and the threshold gain including the modal loss in the absorptive grating region for rectangular and trapezoidal gratings. Based on the comparison of the results for various possible absorptive grating structures, the design guidelines are presented to obtain the low threshold gain or large fabrication tolerance. Among the grating structures studied, the double grating structure consisting of the absorptive grating on the index grating has the largest fabrication tolerance for the threshold gain and the coupling strength. The fabrication tolerance for the coupling ratio is very large for all the grating structures studied.

• 제어로봇시스템학회:학술대회논문집
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• 2003.10a
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• pp.2287-2290
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• 2003

The electrical characteristics of power devices such as BJT (Bipolar Junction Transistor), and MOSFET (Metal Oxide Field Effect Transistor), etc, are altered due to impinging photon radiation and temperature in the nuclear or the space environment. In this paper, BJT and MOSFET are the two devices subjected to ${\gamma}$ radiation. In the case of BJT, the current gain (${\beta}$) and the collector to Emiter breakdown voltage ($V_{CEO}$) are the two main parameters considered. When it was subjected to ${\gamma}$ rays, the ${\beta}$ decreases as the dose level increases, whereas, $V_{CEO}$ gradually increases as the dose level increases. In the case of MOSFET, the threshold voltage is decreasing as the dose level increases. Here it has been observed the decent rate is an increasing function of the threshold voltage. The on-resistance does not change with respect to the dose. Both the devices recover back the original specification after the annealing is finished. No permanent damage has been occurred.

• Journal of Communications and Networks
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• v.16 no.1
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• pp.56-66
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• 2014

We propose a novel opportunistic access scheme for cognitive radios in an interweave cognitive system, that considers the channel gain as well as the predicted idle channel probability (primary user occupancy: Busy/idle). In contrast to previous work where a cognitive user vacates a channel only when that channel becomes busy, the proposed scheme requires the cognitive user to switch to the channel with the next highest idle probability if the current channel's gain is below a certain threshold. We derive the threshold values that maximize the long term throughput for various primary user transition probabilities and cognitive user's relative movement.

• Korean Journal of Optics and Photonics
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• v.10 no.1
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• pp.53-57
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• 1999

We established the laser oscillator using Nd:YAG crystal grown at Ssang Yong company in Korea and investigated the characteristics of oscillation, Q-switching and wave front of output beam. We measured the single pass gain by controlling the threshold input energy with two output couplers of different output reflectances. Moreover, we compared the gain measured by different output couplers with the gain directly measured by the laser amplifier. The peak power of Q-switching, the pulse width, and the single pass gain coefficient at the threshold energy were 1.5 MW, 30ns, and 0.0958 cm-$^1$ respectively and they were compared with those of the commercial Nd:YAG crystal. Our crystal was proved to be as good as the commercial crystal.

• Journal of Software Assessment and Valuation
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• v.15 no.2
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• pp.101-109
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• 2019

Lasers for optical broadband communication systems should have excellent frequency selectivity and modal stability. DFB(Distributed Feedback) lasers have low lasing frequency shift during high speed current modulation. In this paper, I have developed a simulation software and analysed threshold gain and lasing frequency of a lasing mode in longitudinal direction of an 1.55um DFB laser with two mirrors and without anti-reflection coatings, that have both an index- and gain-gratings. The grating phase on a left mirror face is fixed as π/2 and the grating phase on a right mirror face is varied. As the phases of the index and gain gratings on the right mirror facet are π and 0, κL should be in the range of 2~6 in order to enhance the frequency stability. In order to reduce the threshold current of a lasing mode, κL should be greater than 8, regardless of the grating phases on the mirror faces.