• Title/Summary/Keyword: Gain matching

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Multiband Microstrip-Fed Right Angle Slot Antenna Design for Wireless Communication Systems

  • Rakluea, Paitoon;Anantrasirichai, Noppin;Janchitrapongvej, Kanok;Wakabayashi, Toshio
    • ETRI Journal
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    • v.31 no.3
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    • pp.271-281
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    • 2009
  • This paper presents a novel multiband microstrip-fed right angle slot antenna design technique for multiple independent frequency bands. The new technique uses various slot sizes at various appropriate positions. We first propose a tri-band slot antenna consisting of three right angle slots. Then, a quad-band slot antenna is developed with four right angle slots which achieves slant ${\pm}45^{\circ}$ linear polarization, omnidirectional pattern coverage, good antenna gain, and acceptable impedance bandwidths over all the operating frequency range. Moreover, an open-circuited tuning stub is introduced to achieve good impedance matching. Both proposed antennas are designed on a ground plane of RT/duroid 5880 substrate with a thickness of 1.575 mm. The real measurable results show that the desired frequencies used in wireless communication systems, namely, WLAN and WiMax, are efficiently achieved.

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Spectral Shape Invariant Real-time Voice Change System (스펙트럼 형태 불변 실시간 음성 변환 시스템)

  • Kim Weon-Goo
    • Journal of the Korean Institute of Intelligent Systems
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    • v.15 no.1
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    • pp.48-52
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    • 2005
  • In this paper, the spectral shape invariant real-time voice change method is proposed to change one's voice to mechanical voice. For this purpose, LPC analysis and synthesis is used to maintain the spectraum of voice and the pitch of synthesis speech can be changed freely. In the proposed method, gain matching method is applied to excitation signal generator to make the changed voice natural to hear. In order to evaluate the performance of the proposed method, voice change experiments were conducted. Experimental results showed that original speech signal is changed to the mechanical voice signal in which context of the speaker's voice is conveyed correctly in spite of drastic change of pitch. The system is implemented using TI TMS320C6711DSK board to verify the system runs in real time.

The Effects of Infant Massage on Weight, Height, and Mother-Infant Interaction

  • Lee, Hae-Kyung
    • Journal of Korean Academy of Nursing
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    • v.36 no.8
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    • pp.1331-1339
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    • 2006
  • Purpose. The purpose of this study was to test the effects of infant massage (auditory (mother's voice), tactile/ kinesthetic (massage) and visual (eye to eye contact) stimulation) on weight and height of infant and mother-infant interaction with normal infants over a period of 4 weeks. Method. This study was designed as a nonequivalent control group pretest-posttest design. The experimental group infants (aged 2-6 months) participated in one of the infant massage programs at the health district center for 4 weeks. The control group (N=26) was paired with the experimental group (N=26) by matching the infant's age and sex. Infant weight, height, and mother-infant interaction were measured two times and recordings of the mother-infant interaction were done using the video equipment in a room at the health center for 10 minutes. Results. After 4 weeks of massage, there were no significant differences weight gain and height increase between the two groups. Comparison of the total scores for the mother-infant interaction between the two groups showed a significant difference (t=5.21, p=.000). There were also significant differences on maternal response (t=3.78, p=000), infant response (t=5.71, p=000) and dyadic response (t=4.05, p=000) in the mother-infant interaction between the two groups. Conclusion. Overall, the results of this study reassure that infant massage facilitates the mother-infant interaction for infants and mothers who give massage to their baby.

Design and Fabrication of RF evaluation board for 900MHz (900MHz대역 수신기용 RF 특성평가보드의 설계 및 제작)

  • 이규복;박현식
    • Journal of the Microelectronics and Packaging Society
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    • v.6 no.3
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    • pp.1-7
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    • 1999
  • A single RF transceiver evaluation board have been developed for the purpose of application to the 900MHz band transceiver contained RF-IC chip And environment test was evaluated. The RF-IC chipset includes LNA(Low Noise Amplifier), down-conversion mixer, AGC(Automatic Gain Controller), switched capacitor filter and down sampling mixer. The RF evaluation board for the testing of chipset contained various external matching circuits, filters such as RF/IF SAW(Surface Acoustic Wave) filter and duplexer and power supply circuits. With the range of 2.7~3.3V the operated chip revealed moderate power consumption of 42mA. The chip was well operated at the receiving frequency of 925~960MHz. Measurement result is similar to general RF receiving specification of the 900MHz digital mobile phone.

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Design and Fabrication of S-band Ultra High Power Transistorized Amplifier (마이크로파대 고출력 트란지스터 증폭기의 설계와 시작)

  • 심재철;김종련
    • Journal of the Korean Institute of Telematics and Electronics
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    • v.14 no.5
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    • pp.7-14
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    • 1977
  • Conventionally, a TIVT has been used for high power amplification in the microwave frequency range. However, an ultra-high-power amplifier in the 2GHz range has successfully been designed and fabricated employing high power transistors developed recently and available commercially. In the design of the amplifier, a balanced-pair configuration is adopted in order to obtain very high microwave power, and a good impedance matching is achieved by making use of microstripline techniques. For the RF power divider as well as combiner, an approach of stripline directional coupler isadopted because of its easiness in fabrication. The coupler so designed and fabricated indicates a satisfactory performance as a quadrature hybrie coupler. Measurements on the amplifier developed for an immediate commercial application also exhibit excellent overall performance characteristics RF power output, 14 watts, gain 14dB, frequency bandwidth, 160MHz, effciency 40%.

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High Response and Precision Control of Electronic Throttle Controller Module without Hall Position Sensor for Detecting Rotor Position of BLDCM

  • Lee, Sang-Hun;Ahn, Jin-Woo
    • Journal of international Conference on Electrical Machines and Systems
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    • v.2 no.1
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    • pp.97-103
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    • 2013
  • This paper describes the characteristics of Electronic Throttle Controller (ETC) module in BLDC motor without the hall sensor for detecting a rotor position. The proposed ETC control system, which is mainly consisted of a BLDC motor, a throttle plate, a return spring and reduction gear, has a position sensor with an analogue voltage output on the throttle valve instead of BLDC motor for detecting the rotor position. So the additional commutation information is necessarily needed to control the ETC module. For this, the estimation method is applied. In order to improve and obtain the high resolution for the position control, it is generally needed to change the gear ratio of the module or the electrical switching method etc. In this paper, the 3-phase switching between successive commutations is adapted instead of the 2-phase switching that is conventionally used. In addition, the position control with a variable PI gain is applied to improve a dynamic response during a transient period and reduce vibration at a stop in case of matching position reference. The mentioned method can be used to estimate the commutation state and operate the high-precision position control for the ETC module and the high response characteristics. The validity of the proposed method is examined through the experimental results.

A New Design-for-Testability Circuit for Low Noise Amplifiers (저잡음 증폭기를 위한 새로운 구조의 검사용 설계회로)

  • Ryu Jee-Youl;Noh Seok-Ho
    • Journal of the Institute of Electronics Engineers of Korea TC
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    • v.43 no.3 s.345
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    • pp.68-77
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    • 2006
  • This paper presents a new Design-for-Testability (DfT) circuit for 4.5-5.5GHz low noise amplifiers (LNAs). The DfT circuit measures gain, noise figure, input impedance, input return loss, and output signal-to-noise ratio for the LNA without external expensive equipment. The DfT circuit is designed using 0.18m SiGe technology. The circuit utilizes input impedance matching and DC output voltage measurements. The technique is simple and inexpensive.

Design of V-Band Differential Low Noise Amplifier Using 65-nm CMOS (65-nm CMOS 공정을 이용한 V-Band 차동 저잡음 증폭기 설계)

  • Kim, Dong-Wook;Seo, Hyun-Woo;Kim, Jun-Seong;Kim, Byung-Sung
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.28 no.10
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    • pp.832-835
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    • 2017
  • In this paper, V-band differential low noise amplifier(LNA) using 65-nm CMOS process for high speed wireless data communication is presented. The LNA is composed of 3-stage common-source differential amplifiers with neutralization of feedback capacitances using MOS capacitors and impedance matching utilizing transformers. The fabricated LNA has a peak gain of 23 dB at 63 GHz and 3 dB bandwidth of 6 GHz. The chip area of LNA is $0.3mm^2$ and the LNA consumes 32 mW DC power from 1.2 V supply voltage.

Reactance Loaded Dipole Antennal Elements for Beam Tilting with Forced Resonance (리액턴스 장하 강제 공진형 지향성 틸트 다이폴 안테나 소자)

  • 김기채;권익승;서영석;박용완
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.11 no.2
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    • pp.278-285
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    • 2000
  • This paper presents the basic characteristics of the beam tilting dipole antenna element in which one reactance element is used for the impedance matching at the feed point. The radiation pattern is tilted by the properly determined driving point position, and the loading reactance is used to obtain forced resonance without great changes in tilt angle. The numerical results demonstrate that the reactance element should be loaded in the region where the driving point is placed to obtain forced resonance of the antenna with little changes in beam tilt angle. In case the proposed forced resonant beam tilting antenna with $0.8\lambda$ length is driven at $0.2\lambda$ from the center, the main beam tilt angle o.5 57.7 degrees, the highest power gain of 8.6 dB are obtained.

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S-Band Internally-Matched High Efficiency and High Power Amplifier Using GaN HEMT Die (GaN HEMT Die를 이용한 S-대역 내부 정합형 고효율 고출력 증폭기)

  • Kim, Sang-Hoon;Choi, Jin-Joo;Choi, Gil-Wong;Kim, Hyoung-Joo
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.26 no.6
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    • pp.540-545
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    • 2015
  • This paper presents the design, fabrication and measurement results of a S-band internally-matched power amplifier using Gallium Nitride High Electron Mobility Transistor(GaN HEMT) die. In order to fabricate the S-band internally-matched power amplifier, a high dielectric substrate and alumina were used for input/output matching circuits. The measured output power is 55.4 dBm, the drain efficiency is 78 % and the power gain is 11 dB under pulse operation at the frequency of 3 GHz.