• 제목/요약/키워드: Gain matching

검색결과 409건 처리시간 0.026초

Frequency Tuning Characteristics of a THz-wave Parametric Oscillator

  • Li, Zhongyang;Bing, Pibin;Xu, Degang;Yao, Jianquan
    • Journal of the Optical Society of Korea
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    • 제17권1호
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    • pp.97-102
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    • 2013
  • Frequency tuning characteristics of a THz-wave by varying phase-matching angle and pump wavelength in a noncollinear phase-matching THz-wave parametric oscillator (TPO) are analyzed. A novel scheme to realize the tuning of a THz-wave by moving the cavity mirror forwards and backwards is proposed in a noncollinear phase-matching TPO. The parametric gain coefficients of the THz-wave in a $LiNbO_3$ crystal are explored under different working temperatures. The relationship between the poling period of periodically poled $LiNbO_3$ (PPLN) and the THz-wave frequency under the condition of a quasi-phase-matching configuration is deduced. Such analyses have an impact on the experiments of the TPO.

Method for Adjusting Single Matching Network for High-Power Transfer Efficiency of Wireless Power Transfer System

  • Seo, Dong-Wook;Lee, Jae-Ho;Lee, Hyungsoo
    • ETRI Journal
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    • 제38권5호
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    • pp.962-971
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    • 2016
  • A wireless power transfer (WPT) system is generally designed with the optimum source and load impedance in order to achieve the maximum power transfer efficiency (PTE) at a specific coupling coefficient. Empirically or intuitively, however, it is well known that a high PTE can be attained by adjusting either the source or load impedance. In this paper, we estimate the maximum achievable PTE of WPT systems with the given load impedance, and propose the condition of source impedance for the maximum PTE. This condition can be reciprocally applied to the load impedance of a WPT system with the given source impedance. First, we review the transducer power gain of a two-port network as the PTE of the WPT system. Next, we derive two candidate conditions, the critical coupling and the optimum conditions, from the transducer power gain. Finally, we compare the two conditions carefully, and the results therefore indicate that the optimum condition is more suitable for a highly efficient WPT system with a given load impedance.

E-대역 본드와이어 모델링 및 정합회로 설계 (E-Band Bond-Wire Modeling and Matching Network Design)

  • 김기목;강현욱;이우석;최두헌;양영구
    • 한국전자파학회논문지
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    • 제29권6호
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    • pp.401-406
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    • 2018
  • 본 논문에서는 E-대역에서 본드와이어의 기생성분을 예측하고, 그에 따른 전송손실을 줄이기 위한 정합회로를 설계하였다. 본드와이어의 임피던스는 3D EM 시뮬레이션을 통해 예측하였고, 정합회로는 간단한 구조로 구성하여 공간 활용 및 시스템 적용에 용이하도록 하였다. 설계된 정합회로는 WR-12 규격의 도파관 기구와 71~86 GHz의 사용주파수를 갖는 상용 LNA 소자에 적용하였다. 정합회로는 시스템의 전달계수를 최대 4.5 dB, 전력 이득은 최대 3.12 dB, $P_{1dB}$를 최대 2.2 dB 증가시켰으며 이득 평탄도를 ${\pm}1.07dB$ 개선시켰다.

정합회로 보상 방법을 이용한 S-밴드용 광대역 증폭기 연구 (Studies on S-band Broadband Amplifier using compensated matching network)

  • 김진성;안단;이진구
    • 대한전자공학회논문지TC
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    • 제40권6호
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    • pp.247-252
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    • 2003
  • 본 논문에서는 ETRI의 0.5 ㎛ MESFET 공정을 이용하여 광대역 MMIC 2단 증폭기를 설계 및 제작하였다. 정합회로에 의한 보상 방법(Compensated matching network)을 응용하여 2단 증폭기에서 첫 번째 단과 두 번째 단의 이득 특성이 서로 보상되도록 설계하여 광대역 특성을 얻을 수 있었으며, 일반적인 광대역 증폭기가 넓은 대역폭과 낮은 이득 및 출력 전력을 갖지만 본 논문에서는 compensated matching network를 이용하여 넓은 대역폭뿐만 아니라 높은 이득 특성을 얻었다. 제작된 광대역 증폭기의 측정결과, 1.1∼2.8 ㎓의 대역폭을 가졌으며 S/sub 21/ 이득은 11.1±0.3 ㏈를 얻었다. 전력 특성의 경우 2.4 ㎓에서 입력전력이 4 ㏈m일 때 P1㏈는 12.6 ㏈m을 얻었다.

일정 이득 이미턴스 궤적을 이용한 초광대역 마이크로파 증폭기 설계 (Design of Ultra-broadband Microwave Amplifier Using Immittance Loci of Constant Gain)

  • 구경헌;이충웅
    • 대한전자공학회논문지
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    • 제27권9호
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    • pp.1344-1350
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    • 1990
  • A design method of ultra-broadband microwave amplifier is presented. A lossy network is represented as the combination of a serial impedance component and a parallel admittance component, and the realizable ranges of the gain and the reflection coefficients are derived with the components connected to the input, output or interstage network. The matching network has been designed by using the serial and parallel immittance loci which have the constant gain or reflection coefficients within the realizable ranges. Using the proposed method, deisgn examples of ultra-broadband amplifiers operating from dc to 12GHz frequency range are presented.

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하이브리드 마이코로파 광대역 증폭기용 임피던스 정합회로 설계 (Design of broad-band impedance matching networks for hybrid microwave amplifier applications)

  • 김남태
    • 전자공학회논문지D
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    • 제35D권5호
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    • pp.11-17
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    • 1998
  • In this paper, the synthesis procedufe of impedance matching network is presented for broad-band microwave amplifier design, whereby amplifier operating in the octave bandwidth is designed and fabricated in detail. The transfer function of the matching netowrks is synthesized by chebyshev approximation and element values for the networks of specified topology are calculatd for various MILs and ripples. After the transistor is modeled by negative-image device model, the synthesis procedure for matching networks is applied to broad-band amplifier design which has electrical performance of about 12dB gain in 4 to 8GHz range. Experimental results obtained from the fabricated amplifier are shown to approach the electrical performance designed in the given frequency range. Construction of the impedance matching networks by transfer function synthesis is very useful method for the design of broad-band microwave amplifiers.

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DC~7GHz 초광대역 GaAs MESFET 증폭기 (A DC~7GHz Ultrabroad-Band GaAs MESFET)

  • 윤영철;장익수
    • 전자공학회논문지A
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    • 제30A권3호
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    • pp.34-42
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    • 1993
  • An analytic approach to wide-band amplification using simplified equivalent MESFET modeling has enabled an ultrabroad-band flat-gain amplifier from DC to microwave. The developed lossy-match ultrabroad-band amplifier operates as a RC coupled circuit in the low-frequency range and lossless impedance matching circuit in the microwave frequency range with gain compensation circuits. The reduced gain caused by external resistors is compensated using 2-stage cascade amplification, and the gain of designed unit is 12.5.+-.1dB from the vicinity of DC to 7GAz. The experimental gain characteristics are good agreement with computer simulated results. The input and output VSWRs are measured under 2:1 over the operating frequency range, and the gain goes down over 15dBrange with various gate bias voltages.

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Study on Two-Coil and Four-Coil Wireless Power Transfer Systems Using Z-Parameter Approach

  • Seo, Dong-Wook;Lee, Jae-Ho;Lee, Hyung Soo
    • ETRI Journal
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    • 제38권3호
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    • pp.568-578
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    • 2016
  • A wireless power transfer (WPT) system is usually classified as being of either a two-coil or four-coil type. It is known that two-coil WPT systems are suitable for short-range transmissions, whereas four-coil WPT systems are suitable for mid-range transmissions. However, this paper reveals that the two aforementioned types of WPT system are alike in terms of their performance and characteristics, differing only when it comes to their matching-network configurations. In this paper, we first find the optimum load and source conditions using Z-parameters. Then, we estimate the maximum power transfer efficiency under the optimum load and source conditions, and we describe how to configure the matching networks pertaining to both types of WPT system for the given optimum load and source conditions. The two types of WPT system show the same performance with respect to the coupling coefficient and load impedance. Further, they also demonstrate an identical performance in the two cases considered in this paper, that is, a strong-coupled case and a weak-coupled case.

광대역의 이중대역 동작을 위한 PMP용 소형/부착형 DVB-H 안테나 (Compact & Contact DVB-H Antenna with Broad Dual-band operation for PMP Applications)

  • 염인수;정창원
    • 한국산학기술학회논문지
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    • 제11권3호
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    • pp.891-895
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    • 2010
  • 본 논문에서는 듀얼 밴드(UHF: 470-862 Mhz, L: 1452-1492 MHz) DVB-H 안테나를 제작하였다. 제안된 안테나는 입력 임피던스 매칭 회로를 이용한 평판형 역 F 안테나 (PIFA)로 구성되었다. 매칭 회로는 안테나의 UHF 대역(470-862 MHz: 63%) 성능을 향상시켰다. 제시된 안테나는 전방향적 특징을 보이고 PMP에 적용 가능한 충분한 이득(최대 이득이 470-860 MHz에서 1.70dBi)을 보인다. 안테나는 소형으로 제작 되었으며 크기를 줄이기 위해 유전체로써 사용되어진 PMP 케이스(${\varepsilon}_r\;=\;3.2$)에 부착되었다.

CMOS 기술을 기반으로 제작된 정합 특성이 우수한 BJT 구조 (A BJT Structure with High-Matching Property Fabricated Using CMOS Technology)

  • 정의정;권혁민;권성규;장재형;곽호영;이희덕
    • 대한전자공학회논문지SD
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    • 제49권5호
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    • pp.16-21
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    • 2012
  • 본 논문에서는 CMOS 기반의 BJT 제작에 있어서 일반적인 BJT 구조에 비해 정합특성이 우수한 새로운 BJT 구조를 제안하고, 특성을 비교 분석하였다. 새로운 정합 구조가 기존의 정합 구조에 비해 콜렉터 전류 밀도 $J_C$는 0.361% 감소하였고, 전류이득 ${\beta}$는 0.166% 증가하여 큰 차이가 보이지 않았지만, 소자 면적이 10% 감소했으며, 콜렉터 전류($A_{Ic}$)와 전류이득($A_{\beta}$)의 정합 특성이 각각 45.74%, 38.73% 향상되었다. 이와 같이 정합특성이 개선된 주 이유는 쌍으로 형성된 BJT 소자들의 에미터 간의 거리가 감소한 것이라고 생각되며, deep n-well 저항의 표준편차 값이 다른 저항들에 비해 큰 것으로부터 간접적으로 증명이 된다고 여겨진다.