• Journal of Sensor Science and Technology
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• v.32 no.6
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• pp.441-446
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• 2023

Electrical and optical characteristics of the GaN-based light-emitting diode (LED) with the improved multi-quantum well (MQW) structure have been studied for light source in bio-sensing systems. Novel GaN/In_0.1GaN/In_0.2GaN/In_0.1GaN/GaN and Al_0.1GaN/GaN/In_0.2GaN/GaN/Al_0.1GaN (MQW) structures were suggested, and their radiative recombination rate, light output power, electroluminescence, and external quantum efficiency were compared with those of the conventional GaN/In_0.2GaN/GaN MQW structure using device simulation. The LED with the GaN/In_0.1GaN/In_0.2GaN/In_0.1GaN/GaN MQW structure showed an excellent recombination rate of 5.57 × 10²⁸ cm^-3·s^-1 that was more than one order improvement over that of the conventional LED. In addition, the efficiency droop was relieved by the suggested stepped MQW structure.

• Journal of the Korean Vacuum Society
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• v.20 no.1
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• pp.22-29
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• 2011

An infrared thermographic imaging module of [$320{\times}256$] focal-plane array (FPA) based on [InAs/GaSb] strained-layer superlattice (SLS) was fabricated, and its images were demonstrated. The p-i-n device consisted of an active layer (i) of 300-period [13/7]-ML [InAs/GaSb]-SLS and a pair of p/n-electrodes of (60/115)-period [InAs:(Be/Si)/GaSb]-SLS. FTIR photoresponse spectra taken from a test device revealed that the peak wavelength (${\lambda}_p$) and the cutoff wavelength (${\lambda}_{co}$) were approximately $3.1/2.7{\mu}m$ and $3.8{\mu}m$, respectively, and it was confirmed that the device was operated up to a temperature of 180 K. The $30/24-{\mu}m$ design rule was applied to single pixel pitch/mesa, and a standard photolithography was introduced for [$320{\times}256$]-FPA fabrication. An FPA-ROIC thermographic module was accomplished by using a $18/10-{\mu}m$ In-bump/UBM process and a flip-chip bonding technique, and the thermographic image was demonstrated by utilizing a mid-infrared camera and an image processor.

• The Korean Journal of Nuclear Medicine Technology
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• v.27 no.2
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• pp.111-127
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• 2023

Purpose: Gallium-68 (⁶⁸Ga) is increasingly used in nuclear medicine imaging for various conditions such as lymphoma and neuroendocrine tumors by labeling tracers like Prostate Specific Membrane Antigen (PSMA) and DOTA-TOC. However, compared to Fluorine-18 (¹⁸F) used in conventional nuclear medicine imaging, ⁶⁸Ga has lower spatial resolution and relatively higher Signal to Background Ratio (SBR). Therefore, this study aimed to investigate the optimized parameters and reconstruction methods for PET/CT imaging using the ⁶⁸Ga radiotracer through model-based image evaluation. Materials and Methods: Based on clinical images of ⁶⁸Ga-PSMA PET/CT, a NEMA/IEC 2008 PET phantom model was prepared with a Hot vs Background (H/B) ratio of 10:1. Images were acquired for 9 minutes in list mode using DMIDR (GE, Milwaukee WI, USA). Subsequently, reconstructions were performed for 1 to 8 minutes using OS-EM (Ordered Subset Expectation Maximization) + TOF (Time of Flight) + Sharp IR (VPFX-S), and BSREM (Block Sequential Regularized Expectation Maximization) + TOF + Sharp IR (QCFX-S-400), followed by comparative evaluation. Based on the previous experimental results, images were reconstructed for BSREM + TOF + Sharp IR / 2 minutes (QCFX-S-2min) with varying β-strength values from 100 to 700. The image quality was evaluated using AMIDE (freeware, Ver.1.0.1) and Advanced Workstation (GE, USA). Results: Images reconstructed with QCFX-S-400 showed relatively higher values for SNR (Signal to Noise Ratio), CNR (Contrast to Noise Ratio), count, RC (Recovery Coefficient), and SUV (Standardized Uptake Value) compared to VPFX-S. SNR, CNR, and SUV exhibited the highest values at 2 minutes/bed acquisition time. RC showed the highest values for a 10 mm sphere at 2 minutes/bed acquisition time. For small spheres of 10 mm and 13 mm, an inverse relationship between β-strength increase and count was observed. SNR and CNR peaked at β-strength 400 and then decreased, while SUV and RC exhibited a normal distribution based on sphere size for β-strength values of 400 and above. Conclusion: Based on the experiments, PET/CT imaging using the ⁶⁸Ga radiotracer yielded the most favorable quantitative and qualitative results with a 2 minutes/bed acquisition time and BSREM reconstruction, particularly when applying β-strength 400. The application of BSREM can enhance accurate quantification and image quality in ⁶⁸Ga PET/CT imaging, and an optimization process tailored to each institution's imaging objectives appears necessary.

• Journal of the Korean Institute of Telematics and Electronics
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• v.26 no.9
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• pp.1308-1316
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• 1989

A simplified 10-element GaAs MESFET equivalent circuit model has been presented which is suitable for the design of ultrabroad-band microwave small-signal amplification, the these circuit element values are extracted from measured S-parameters using complex-curve fitting algorithm. Packaged GaAs MESFET equivalent circuits are composed of intrinsic \ulcornermodel and several extrinsic elements at microwave frequencies, of which the largest effects are caused by package lead inductances. If these are eliminated from measured S-parameters, newly obtained S-parameters are closed to intrinsic \ulcornermodel, and the rest element values can be easily extracted. The modeling results applied to the packaged GaAs MESFET NE71083 are almost equal between the measure S-parameters and the mideled S-parameters within b 2% errors from DC to 8GHz, and errors are increased to \ulcorner% upto 12GHz wide bandwidth.

• Journal of Korean Association for Spatial Structures
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• v.5 no.3 s.17
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• pp.117-122
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• 2005

This paper investigated the optimum design of truss structures based on Genetic Algorithms (GA's). With GA's characteristic of running side by side, the overall optimization and feasible operation, the optimum design model of truss structures was established. Elite models were used to assure that the best units of the previous generation had access to the evolution of current generation. Using of non-uniformity mutation brought the obvious mutation at earlier stage and stable mutation in the later stage; this benefited the convergence of units to the best result. In addition, to avoid GA's drawback of converging to local optimization easily, by the limit value of each variable was changed respectively and the genetic operation was performed two times, so the program could work more efficiently and obtained more precise results. Finally, by simulating evolution process of nature biology of a kind self-organize, self-organize, artificial intelligence, this paper established continuous structural optimization model for ten bars cantilever truss, and obtained satisfactory result of optimum design. This paper further explained that structural optimization is practicable with GA's, and provided the theoretic basis for the GA's optimum design of structural engineering.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.169.2-169.2
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• 2013

본 연구에서는 gas를 이용한 PECVD 공법중 이온화 에너지가 높고 대면적 코팅이 용이한 Hybrid 코팅 장비에서 Linear Ion-Gun 이용하여 탄화수소 계열의 gas인 $C_2H_2$ 와 Si을 함유한 TMS (tetramethylsilane, $Si(CH_3)_4)$ gas를 이용하여 저마찰, 고경도 특성을 갖는 Si-DLC 코팅에 대한 연구를 수행하였다. Si-DLC 코팅에 앞서 전처리 공정으로 Linear Ion-Gun에 Ar gas를 주입하고 고전압의 DC 전원을 인가하여 제품 표면의 건식세정 및 표면 활성화를 진행 후, $C_2H_2$ 와 TMS gas를 Linear Ion-Gun에 주입하여 Si-DLC 코팅 공정을 진행하였다. Si-DLC 코팅시 $C_2H_2$ gas 주입량을 고정하고 TMS 가스 유량을 5~20sccm으로 조절하여 Si 함유량에 따른 Si-DLC 코팅막의 특성을 분석하였다. 이렇게 코팅된 Si-DLC의 박막 특성 분석으로 마찰계수 측정을 위해 ball-on-disk 타입의 tribometer를 사용하였으며, 박막 경도 측정은 Nano-indenter를 이용하여 분석을 진행하였다. 그 결과 Si을 포함하지 않는 DLC의 경우 마찰계수가 ~0.2를 가지는 반면, Si-DLC의 경우 Si 함유량이 약 1.5at%일 때, 마찰계수 ~0.04 저마찰의 우수한 특성을 지니며, 박막의 경도는 22[Gpa]로 고경도의 Si-DLC 코팅을 확인할 수 있었다.

• Proceedings of the Korean Vacuum Society Conference
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• 1998.02a
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• pp.108-108
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• 1998

최근의 GaN에 관한 연구는 주로 MOCVD법과 MBE법이 이용되고 있으며 대부분 800¬1$\alpha$)()t 정도의 고옹에서 이루어지고 었다. 그러나 이러한 고온 성장은 GaN 성장 과청에서 질 소 vacancy를 생성시켜 광특성을 저하시키고 청색 발광충인 InGaN 화합물에 In의 유입울 어 렵게 하며 저온에서보다 탄소 오염이 증가하는 동의 문제캠을 가지고 있다. 이러한 고온 생장 의 문제점을 해결하기 위한 방법중의 한 가지로 제시되고 있는 것이 저온 성장법이다. 본 연구 에 사용된 RPE-UHVCVD법은 Nz률 rf plasma로 $\sigma$acking하여 공급함으로써 NI-h롤 질소원으 로 사용하는 고온 성장의 청우와는 다르게 온도에 크게 의존하지 고 질소원올 공급할 수 있 어 저옹 성장이 가능하였다. 기판으로는 a - Alz03($\alpha$)()1)를 사용하였고 3족원은 TEGa(triethylgallium)이며,5족원으로는 6 6-nine Nz gas를 rf plasma로 cracking하여 활성 질소원올 공급하였다 .. Nz plasma로 질화처리 를 한 sapphire 표면 위에 G따애 핵생성충을 성장 옹도(350 t, 375 t, 400 t)와 성장시간(30 분,50 분) 그리고 VIllI비(1$\alpha$)(), 2뼈)둥을 변화시키면서 성장시킨 후 GaN 에피택시충을 450 $^{\circ}C$에서 120 분 동안 성장시켰다 .. XPS(x-ray photoelectron spectroscopy), XRD(x-ray d diffraction), AFM(atomic force microscope)둥올 이용하여 표면의 조성 및 morphology 변화와 결정성을 관찰하였다. X XPS 분석 결과 질화처리를 한 sapphire 표면에는 AlN가 형성되었다는 것을 확인 할 수 있 었으며 질화처리를 한 후 G따J 핵생성충올 성장시킨 경우에 morphology 변화를 AFM으로 살 펴본 결과 표면에 facet shape의 island가 형성되었고 이러한 결파는 질화처리 과청이 facet s shape의 island 형성을 촉진시킨다는 것을 알 수 있었다. 핵생성충의 성장온도가 중가함에 따 라 island의 모양은 round shape에서 facet shape으로 변화하였다. 이러한 표면의 morphology 변화와 GaN 에피택시충의 결정성과의 관계를 살펴보면 GaN 에피택시충 표면의 rms(root m mean square) roughness가 중가하는 경 우 XRD (j -rocking curve의 FWHM(full width half m maximum) 값이 감소하는 것으로 나타났다. 이러한 현상은 결정성의 향상이 columnar 성장과 관계가 었다는 것올 알 수 있었다 .. columnar 성장은 결함의 밀도가 낮은 column의 형생과 G GaN 에피택시충의 웅력 제거로 인해 G값{의 결정성을 향상시킬 수 있는 것으로 생각된다. 톡 히 고온 성장의 경우와는 달리 rms roughness의 중가가 100-150 A청도로 명탄한 표면올 유 지하면서 결정성을 향상시킬 수 있었다. 본 실험에서는 핵생성충올 375 t에서 30 분 생장시킨 경우에 hexagonal 모양의 island로 columnar 성장을 하였고 GaN 에피태시충의 결정성도 가장 향상되었다 이상의 결과로부터 RPE-UHVCVD법용 이용한 GaN 저온 성장에서도 GaN의 결청성올 향 상시킬 수 있음융 확인할 수 있었다.

• Journal of the Korean Vacuum Society
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• v.18 no.4
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• pp.245-253
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• 2009

For the growth optimization of InAs/GaSb (8/8-ML) strained-layer superlattice (SLS), the structure has been grown under various conditions and modes and characterized by the high-resolution x-ray diffraction (XRD) analysis. In this study, the strain modulation is induced by changing parameters and modes, such as the growth temperature, the ratio of V/III beam-equivalent-pressure (BEP), and the growth interruption (GI), and the strain variation is analyzed by measuring the angle separation of 0th-order satellite peak in XRD patterns. The XRD results reveal that the growth temperature and the V/III(Sb/Ga) ratio are major parameters to change the crystallineity and the strain modulation in SLS structures, respectively. We have observed that the SLS samples with compressive strain prepared in this study are show a transition to tensile strain with decreasing V/III(Sb/Ga) ratio, and the GI process is a sensitive factor giving rise to strain modulation. These results obtained in this study suggest that optimized growth temperature and V/III(Sb/Ga) ratio are $350^{\circ}C$ and 20, respectively, and the appropriate GI time is approximately 3 seconds just before InAs growth that the crystallineity is maximized and the strain relaxation is minimized.

• Bulletin of the Korean Chemical Society
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• v.21 no.3
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• pp.295-299
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• 2000

The photoluminescence and cathodoluminescence of $SrGa_2S_4:EU$ phosphor were optimized with the process and chemical variables (activators, fluxes and reaction temperature) used in solid state reaction. Firing the powder with flux at $800^{\circ}C$ for 2hr gave the highest photoluminescence efficiency under near-UV excitation and the highest cathodoluminescence efficiency of 20.1 lm/W at 2 kV and 33.3 lm/W at 10 kV. The suitability of $SrGa_2S_4:EU$ for application as a phosphor in LCDs and FEDs is discussed.

• Journal of Chest Surgery
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• v.42 no.2
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• pp.165-174
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• 2009

Background: With the advances of cardiac surgery, the demand for an artificial prosthesis has increased, and this has led to the development and utilization of diverse alternative materials. We conducted this research to improve an artificial prosthesis by examining the changes of the physical qualities, the pressure related tensile strength, the change in elasticity and the thermostability of a xenograft valve (porcine) and pericardium (bovine, porcine) based on the type of fixation liquid we used. Material and Method: The xenograft valves and pericardium were assigned into three groups: the untreated group, the fixed with glutaraldehyde (GA) group and the glutaraldehyde with GA+solvent such as ethanol etc. group. The surgeons carried out each group's physical activities. Each group's uniaxial tension and elasticity was measured and compared. Thermostability testing was conducted and compared between the bovine and porcine pericardium fixed with GA group and the GA+solvent group. Result: On the physical activity test in the surgeon's hand, no significant difference between the groups was sensed on palpation. For suture and tension, the GA+solvent group was slightly firmer than the low GA concentration group. In general, the circumferential uniaxial tension and elasticity of the porcine aortic and pulmonary valves were better in the fixed groups than that in the untreated group. There was no significant difference between the GA and GA+solvent groups (p>0.05). Bovine and porcine pericardium also showed no significant difference between the GA group and the GA+solvent group (p>0.05). When comparing between the groups for each experiment, the elasticity tended to be stronger in most of the higher GA concentration group (porcine pulmonary valve, porcine pericardium). On the thermostability testing of the bovine and porcine pericardium, the GA group and the G+solvent group both had a sudden shrinking point at $80^{\circ}C$ that showed no difference (bovine pericardium: p=0.057, porcine pericardium: p=0.227). Conclusion: When fixing xenograft prosthetic devices with GA, adding a solvent did not cause a loss in pressure-tension, tension-elasticity and thermostability. In addition, more functional solvents or cleansers should be developed for developing better xenografts.