• The Transactions of the Korean Institute of Electrical Engineers
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• v.41 no.1
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• pp.56-62
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• 1992

The GaAs bulk crystals are grown by the Synthesis Solute Diffusion(SSD) method and its properties are investigated. The crystal growth rate at optimum condition is 0.28 cm/day and their temperature dependence is R(T) = 2.92 x 10S04T exp(-1.548eV/kS1BTT) [cmS02T/day.K]. Etch pits density distribution along radial direction is order of 10S04TcmS0-2T and 10S03TcmS0-2T at the edge and middle of the wafers, respectively, and it increased exponentially along vertical direction of ingot. Moreover,it is uniformly distributed as order of 10S03TcmS0-2T in radial direction of In doped GaAs. The carrier concentration and mobilities are measured to 0.34-2.1 x 10S016T cmS0-3T and 2.3-3.3x10S03T cmS02T/V.sec, respectively.

• Proceedings of the Korean Institute of Intelligent Systems Conference
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• 1997.10a
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• pp.25-30
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• 1997

Genetic Algorithm(GA) is a parallel, global search technique modeled with the Darwinian principle of survival and reproduction of the fittest. Since Holland has proposed GA called the Simple GA, considerable research has focused of improving Simple GA performance. In this paper, I describe some methods of GA's modeling in different field.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.7
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• pp.539-545
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• 2001

Undoped and Co$^{2+}$ $\alpha$-Ga$_2$S$_3$ thin films were grown by spray pyrolysis method. It has been found that these thin films have a monoclinic structure and direct optical energy gap and indirect were located to 3.477eV and 3.123 eV at 10K respectively. In the photoluminescence due to a D0A(donor-acceptor) pair recombination were observed at 502 nm and 671 nm for the $\alpha$-Ga$_2$S$_3$ thin film, where is excited by the 325 nm-line of He-Cd laser. These peaks are identified to be corresponding to the electron transition between the energy levels of Co$^{2+}$ ion sited a the T$_{d}$ symmetry point in the $\alpha$-Ga$_2$S$_3$;Co$^{2+}$ thin film. film.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.11
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• pp.969-974
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• 2003

HgGa$_2$S$_4$ single crystals were grown by the chemical transport reaction method. The HgGa$_2$S$_4$ single crystal crystallized into a defect chalcopyrite structure (I 4). The lattice constants of the single crystal were found to be a = 5.635 $\AA$ and c = 10.473 $\AA$. The direct and indirect optical energy gaps were found to be 2.84eV and 2.78eV, respectively. Photoluminescence peaks of HgGa$_2$S$_4$ single crystal were observed at 2.37 eV, 2.18 eV, and 1.81 eV. In the single crystal, the donor level of 0.25 eV, the acceptor levels of 0.97 eV and 0.41 eV were obtained by TSC, PICTS, and absorption measurements. The photoluminescence peaks were analyzed to relate to the indirect conduction band, the donor level, and the acceptor levels.

• Proceedings of the KIEE Conference
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• 2006.10a
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• pp.200-201
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• 2006

현재상용화 되어 있는 AC PDP는 Ne, Xe 혼합가스를 주로 사용한다. Xe gas의 비율이 높아짐에 따라 PDP의 휘도와 효율은 상승하지만 그와 동시에 방선 전압도 함께 상승하여 이 분야의 연구가 요구된다. 그래서 우리는 Ne gas를 버퍼 가스의 사용하괴 Xe gas를 0${\sim}$15%, Kr gas를 0${\sim}$50% 비율의 첨가하여 패널의 방전 개시 전압, 방선 유지 전압, 방선 마진, 휘도, 효율을 측정하였다. 그 결과 방선 개시 전압이 같고 효율이 각각 2.93[Im/w], 3.23[Im/w]인 Xe10%+Kr20%, Xe5%+Kr40%와 같은 최적의 3원 가스조합을 찾아내었다. 또한 Xe gas와 Kr gas의 합이 40%일 때 효율이 가장 좋아지는 것을 알 수 있었다.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.169.1-169.1
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• 2015

최근 디스플레이 기술은 급속도로 발전해 가고 있다. 디스플레이 산업의 눈부신 성장에 발맞추어 초고화질, 초고선명, 고속 구동 및 대형화 등을 포함하는 최신 기술의 디스플레이 구동이 필요하다. 이러한 요구사항을 만족하기 위해서는 각 픽셀에 영상정보를 기입하는 충전시간을 급격히 감소시켜야 하고 따라서 픽셀 트랜지스터(TFT)의 이동도는 급격히 증가해야 한다. 따라서 차세대 디스플레이 실현을 위해서 고이동도 특성을 구현 할 수 있는 신물질의 개발이 매우 중요하다. 현재 산화물박막트랜지스터는 차세대 디스플레이 실현을 위해 가장 주목받고 있으며, 실제로 산화물박막 트랜지스터의 핵심소재인 In-Ga-Zn-O(a-IGZO) 산화물의 경우 국내외에서 디스플레이에 적용되어 생산이 시작되고있다. 그러나 a-IGZO 산화물의 경우 이동도가 $5-10cm^2V{\cdot}s$ 수준이어서 향후 개발 되어질 초고해상도/고속구동 디스플레이 실현(이동도 $50cm^2V{\cdot}s$)에는 한계가 있다. 따라서 본 연구에서는 이를 해결 할 수 있는 'post-IGZO' 개발을 위해 In2O3에 Ga2O3를 조성별로 고용시켜 박막의 구조적, 전기적, 광학적 특성 및 TFT를 제작하여 특성 연구를 진행하였다. 조성은 In2O3에 Ga2O3를 7.5%~15% 도핑 하였으며, Sputtering을 이용하여 indium gallium oxide(IGO) 박막을 제작하였다. 박막은 상온 및 $300^{\circ}C$에서 증착 하였으며 증착 된 IGO 박막은 Ga=12.5% 까지는 In2O3에 Ga이 모두 고용되어 cubic In2O3 poly crystalline을 나타내는 것을 확인하였으며 Ga=15%에서 Gallium 관련 2차상이 확인되었다. Ga양이 변화함에 따라 박막의 전기적 특성이 조절 가능하였으며 이를 이용하여 IGO 박막을 30 nm 두께로 증착 하여 IGO 박막을 channel layer로 사용하는 bottom gate structured TFTs를 제작 하였다. IGO TFTs는 Ga=10%에서 on/off ratio ${\sim}10^8$, 그리고 field-effect mobility $84.8cm^2/V{\cdot}S$를 나타내며 초고화질, 초고선명 차세대 디스플레이 적용 가능성을 보여 준다.

• Asian Pacific Journal of Cancer Prevention
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• v.13 no.12
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• pp.6211-6216
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• 2012

Objective: To investigate the effects of gambogic acid (GA) on the growth of human malignant glioma cells. Methods: U251MG and U87MG human glioma cell lines were treated with GA and growth and proliferation were investigated by MTT and colony formation assays. Cell apoptosis was analyzed by annexin V FITC/PI flow cytometry, mitochondrial membrane potential assays and DAPI nuclear staining. Monodansylcadaverine (MDC) staining and GFP-LC3 localisation were used to detect autophagy. Western blotting was used to investigate the molecular changes that occurred in the course of GA treatment. Results: GA treatment significantly suppressed cell proliferation and colony formation, induced apoptosis in U251 and U87MG glioblastoma cells in a time- and dose-dependent manner. GA treatment also lead to the accumulation of monodansylcadaverine (MDC) in autophagic vacuoles, upregulated expressions of Atg5, Beclin 1 and LC3-II, and the increase of punctate fluorescent signals in glioblastoma cells pre-transfected with GFP-tagged LC3 plasmid. After the combination treatment of autophagy inhitors and GA, GA mediated growth inhibition and apoptotic cell death was further potentiated. Conclusion: Our results suggested that autophagic responses play roles as a self-protective mechanism in GA-treated glioblastoma cells, and autophagy inhibition could be a novel adjunctive strategy for enhancing chemotherapeutic effect of GA as an anti-malignant glioma agent.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.32A no.12
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• pp.130-135
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• 1995

GaAs power MESFET's with 0.5 .mu.m gate length using a conventional UV lithography and angle evaporations are fabricated and then DC and RF characteristics are measured and carefully analyzed. The 0.5$\mu$m GaAs power MESFET's are fabricated on epi-wafers which have an undoped GaAs layer inbetween n+ and n GaAs layers grown by MBE, and by the processes such as an image reversal(IR), air-bridge, and our developed 0.5 .mu.m gate fabrication techniques. The total gate widths of the fabricated 0.5$\mu$m GaAs power MESFETs are 0.6-3.0 mm, the current saturation of them 80-400 mA, the maximum linear and RF output power of them 60-265 mW. The current gain cut-off frequencies for the 0.5$\mu$m GaAs power MESFETs varies 13-16 GHz. For the test frequency of 10 GHz the maximum unilateral transducer power gains and the power added efficiencies of the GaAs power devices are 7.0-2.5 dB and 35.68-30.76 %, respectively.

• YAKHAK HOEJI
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• v.55 no.1
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• pp.39-44
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• 2011

Many reports indicate that $18{\beta}$-glycyrrhetinic acid ($18{\beta}$-GA) from Glycyrrhizae Radix has anti-inflammatory and immunoregulatory activities, whereas reports regarding anticancer activity of the compound are few. In present study, we investigated antitumor effect of $18{\beta}$-GA on tumor caused by A549 cancer cell in mice. Data resulting from the cytotoxicity assay showed that $18{\beta}$-GA caused killing of A549 cells. $LD_{50}$ values of $18{\beta}$-GA were app. 180 ${\mu}M$ and 80 ${\mu}M$, corresponding to 48 hr- and 72 hr-treatments, displaying that the killing activity was more effective as the $18{\beta}$-GA treatment was prolonged. Based on these data, antitumor effect of $18{\beta}$-GA was tested in nude mice. For induction of the tumor, A549 ($3{\times}10^6$ cells/mouse) was injected subcutaneously into the lateral abdomen of nude mice (Balb/c nu/nu). To determine the antitumor effect, nude mice with tumor were given $18{\beta}$-GA (1 mg/200 ${\mu}l$/mouse) intraperitoneally every three days for four times. Tumor-sizes were measured with a caliper for a period of 24 days. Results showed that the $18{\beta}$-GA treatment reduced the tumor-sizes (P<0.05) as compared with negative control nude mice that received diluent (DPBS). The reduction degree was greater than reduction degree by doxorubicin (60 ${\mu}g$/mouse), and the pattern of reduction was almost sustained during the entire period of the observation. In conclusion, our studies demonstrate that $18{\beta}$-GA has antitumor activity to the A549 cancer cell-caused tumor.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.11a
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• pp.154-154
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• 2003

A stoichiometric mixture of evaporating materials for CuGaSe2 single crystal thin films was prepared from horizontal electric furnace. Using extrapolation method of X-ray diffraction patterns for the polycrystal CuGaSe2, it was found tetragonal structure whose lattice constant at and co were 5.615 ${\AA}$ and 11.025 ${\AA}$, respectively. To obtain the single crystal thin films, CuGaSe2 mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wall epitaxy (MWE) system. The source and substrate temperatures were Slot and 450$^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (UXD). The carrier density and mobility of CuGaSe2 single crystal thin films measured with Hall effect by van der Pauw method are 5.0l${\times}$10$\^$17/ cm$\^$-3/ and 245 $\textrm{cm}^2$/V$.$s at 293K, respectively. The temperature dependence of the energy band gap of the CuGaSe2 obtained from the absorption spectra was well described by the Varshni's relation, Eg(T) = 1.7998 eV - (8.7489${\times}$10$\^$-4/ eV/K)T$^2$/(T + 335 K. After the as-grown CuGaSe2 single crystal thin films was annealed in Cu-, Se-, and Ca-atmospheres, the origin of point defects of CuGaSe2 single crystal thin films has been investigated by the photoluminescence(PL) at 10 K The native defects of V$\_$CU/, V$\_$Se/, Cu$\_$int/, and Se$\_$int/ obtained by PL measurements were classified as a donors or accepters type. And we concluded that the heat-treatment in the Cu-atmosphere converted CuGaSe2 single crystal thin films to an optical n-type. Also, we confirmed that Ga in CuGaSe2/GaAs did not form the native defects because Ga in CuGaSe2 single crystal thin films existed in the form of stable bonds.